JP5819993B2 - Ｅｕｖ光源内の光学系洗浄のためのシステム及び方法 - Google Patents

Ｅｕｖ光源内の光学系洗浄のためのシステム及び方法 Download PDF

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Publication number
JP5819993B2
JP5819993B2 JP2013556718A JP2013556718A JP5819993B2 JP 5819993 B2 JP5819993 B2 JP 5819993B2 JP 2013556718 A JP2013556718 A JP 2013556718A JP 2013556718 A JP2013556718 A JP 2013556718A JP 5819993 B2 JP5819993 B2 JP 5819993B2
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laser
light emitter
gas
cleaning
plasma
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JP2013556718A
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Japanese (ja)
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JP2014510404A5 (cg-RX-API-DMAC7.html
JP2014510404A (ja
Inventor
アレクサンダー エヌ ビカノフ
アレクサンダー エヌ ビカノフ
デア シルヴィア デ
デア シルヴィア デ
アーショフ　アレクサンダー　アイ
アレクサンダー アイ アーショフ
ウラディミール ビー フルーロフ
ウラディミール ビー フルーロフ
イゴー ヴィー フォーメンコフ
イゴー ヴィー フォーメンコフ
パートロ　ウィリアム　エヌ
ウィリアム エヌ パートロ
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ASML Netherlands BV
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ASML Netherlands BV
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Plasma & Fusion (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
JP2013556718A 2011-03-02 2012-02-21 Ｅｕｖ光源内の光学系洗浄のためのシステム及び方法 Active JP5819993B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161464278P 2011-03-02 2011-03-02
US61/464,278 2011-03-02
US13/088,166 US8633459B2 (en) 2011-03-02 2011-04-15 Systems and methods for optics cleaning in an EUV light source
US13/088,166 2011-04-15
PCT/US2012/025963 WO2012118644A1 (en) 2011-03-02 2012-02-21 Systems and methods for optics cleaning in an euv light source

Publications (3)

Publication Number Publication Date
JP2014510404A JP2014510404A (ja) 2014-04-24
JP2014510404A5 JP2014510404A5 (cg-RX-API-DMAC7.html) 2015-04-09
JP5819993B2 true JP5819993B2 (ja) 2015-11-24

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JP2013556718A Active JP5819993B2 (ja) 2011-03-02 2012-02-21 Ｅｕｖ光源内の光学系洗浄のためのシステム及び方法

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Country Link
US (2) US8633459B2 (cg-RX-API-DMAC7.html)
EP (1) EP2681164A4 (cg-RX-API-DMAC7.html)
JP (1) JP5819993B2 (cg-RX-API-DMAC7.html)
KR (1) KR101909546B1 (cg-RX-API-DMAC7.html)
TW (1) TWI573495B (cg-RX-API-DMAC7.html)
WO (1) WO2012118644A1 (cg-RX-API-DMAC7.html)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
JP3165580B2 (ja) 1994-03-30 2001-05-14 三菱重工業株式会社 ２次レーダシステム

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JP6381520B2 (ja) 2013-03-21 2018-08-29 ギガフォトン株式会社 極端紫外光生成装置及びパルスレーザ光の集光ビーム計測装置
US9560730B2 (en) 2013-09-09 2017-01-31 Asml Netherlands B.V. Transport system for an extreme ultraviolet light source
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US9810991B2 (en) 2013-12-23 2017-11-07 Kla-Tencor Corporation System and method for cleaning EUV optical elements
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JP6688966B2 (ja) * 2015-07-27 2020-04-28 パナソニックＩｐマネジメント株式会社 粒子検出センサ
US9776218B2 (en) * 2015-08-06 2017-10-03 Asml Netherlands B.V. Controlled fluid flow for cleaning an optical element
US12298663B2 (en) * 2015-10-22 2025-05-13 Asml Netherlands B.V. Method of manufacturing a pellicle for a lithographic apparatus, a pellicle for a lithographic apparatus, a lithographic apparatus, a device manufacturing method, an apparatus for processing a pellicle, and a method for processing a pellicle
US9888554B2 (en) * 2016-01-21 2018-02-06 Asml Netherlands B.V. System, method and apparatus for target material debris cleaning of EUV vessel and EUV collector
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US10656539B2 (en) * 2017-11-21 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Radiation source for lithography process
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US11979971B2 (en) * 2018-06-29 2024-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. EUV light source and apparatus for lithography
JP6913060B2 (ja) * 2018-07-24 2021-08-04 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理方法
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US11259394B2 (en) * 2019-11-01 2022-02-22 Kla Corporation Laser produced plasma illuminator with liquid sheet jet target
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3165580B2 (ja) 1994-03-30 2001-05-14 三菱重工業株式会社 ２次レーダシステム

Also Published As

Publication number Publication date
US20120223256A1 (en) 2012-09-06
JP2014510404A (ja) 2014-04-24
US20140110609A1 (en) 2014-04-24
KR20140023917A (ko) 2014-02-27
US8633459B2 (en) 2014-01-21
US9000404B2 (en) 2015-04-07
EP2681164A4 (en) 2014-09-03
TW201244549A (en) 2012-11-01
WO2012118644A1 (en) 2012-09-07
TWI573495B (zh) 2017-03-01
KR101909546B1 (ko) 2018-10-18
EP2681164A1 (en) 2014-01-08

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