JP5813007B2 - マイクロ・エレクトロ・メカニカル・システム（ＭＥＭＳ）デバイスのための音響（ａｃｏｕｓｔｉｃ）エアチャネルを有するリードフレームベースのプリモールドされたパッケージ - Google Patents

マイクロ・エレクトロ・メカニカル・システム（ＭＥＭＳ）デバイスのための音響（ａｃｏｕｓｔｉｃ）エアチャネルを有するリードフレームベースのプリモールドされたパッケージ Download PDF

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JP5813007B2
JP5813007B2 JP2012547262A JP2012547262A JP5813007B2 JP 5813007 B2 JP5813007 B2 JP 5813007B2 JP 2012547262 A JP2012547262 A JP 2012547262A JP 2012547262 A JP2012547262 A JP 2012547262A JP 5813007 B2 JP5813007 B2 JP 5813007B2
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inset
opening
carrier
chip
mems
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Japanese (ja)
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JP2013516329A (ja
JP2013516329A5 (enExample
Inventor
アール ハッカビー ジェームズ
アール ハッカビー ジェームズ
エイチ パードム レイ
エイチ パードム レイ
Original Assignee
日本テキサス・インスツルメンツ株式会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0061—Packages or encapsulation suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0081—Thermal properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Micromachines (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Pressure Sensors (AREA)
JP2012547262A 2009-12-31 2010-12-29 マイクロ・エレクトロ・メカニカル・システム（ＭＥＭＳ）デバイスのための音響（ａｃｏｕｓｔｉｃ）エアチャネルを有するリードフレームベースのプリモールドされたパッケージ Active JP5813007B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US29177709P 2009-12-31 2009-12-31
US61/291,777 2009-12-31
US12/969,821 2010-12-16
US12/969,821 US8530981B2 (en) 2009-12-31 2010-12-16 Leadframe-based premolded package having acoustic air channel for micro-electro-mechanical system
PCT/US2010/062331 WO2011082214A2 (en) 2009-12-31 2010-12-29 Leadframe-based premolded package having acoustic air channel for microelectromechanical system (mems) device

Publications (3)

Publication Number Publication Date
JP2013516329A JP2013516329A (ja) 2013-05-13
JP2013516329A5 JP2013516329A5 (enExample) 2014-03-06
JP5813007B2 true JP5813007B2 (ja) 2015-11-17

Family

ID=44186406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012547262A Active JP5813007B2 (ja) 2009-12-31 2010-12-29 マイクロ・エレクトロ・メカニカル・システム（ＭＥＭＳ）デバイスのための音響（ａｃｏｕｓｔｉｃ）エアチャネルを有するリードフレームベースのプリモールドされたパッケージ

Country Status (5)

Country Link
US (2) US8530981B2 (enExample)
EP (1) EP2519970A4 (enExample)
JP (1) JP5813007B2 (enExample)
CN (1) CN102714200B (enExample)
WO (1) WO2011082214A2 (enExample)

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US8618619B1 (en) * 2011-01-28 2013-12-31 Amkor Technology, Inc. Top port with interposer MEMS microphone package and method
TW201308547A (zh) * 2011-07-01 2013-02-16 杰群科技有限公司 塑封內空封裝之結構改良
US8983097B2 (en) 2012-02-29 2015-03-17 Infineon Technologies Ag Adjustable ventilation openings in MEMS structures
US9002037B2 (en) 2012-02-29 2015-04-07 Infineon Technologies Ag MEMS structure with adjustable ventilation openings
US9780248B2 (en) * 2012-05-05 2017-10-03 Sifotonics Technologies Co., Ltd. High performance GeSi avalanche photodiode operating beyond Ge bandgap limits
US9181086B1 (en) 2012-10-01 2015-11-10 The Research Foundation For The State University Of New York Hinged MEMS diaphragm and method of manufacture therof
KR101900282B1 (ko) * 2012-10-22 2018-09-19 삼성전자주식회사 전자 장치를 위한 마이크로폰 장치
US9226052B2 (en) 2013-01-22 2015-12-29 Invensense, Inc. Microphone system with non-orthogonally mounted microphone die
US10840005B2 (en) 2013-01-25 2020-11-17 Vishay Dale Electronics, Llc Low profile high current composite transformer
US9024396B2 (en) 2013-07-12 2015-05-05 Infineon Technologies Ag Device with MEMS structure and ventilation path in support structure
ITTO20130651A1 (it) 2013-07-31 2015-02-01 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo incapsulato, in particolare un sensore micro-elettro-meccanico incapsulato, dotato di una struttura accessibile, quale un microfono mems e dispositivo incapsulato cosi' ottenuto
US9285289B2 (en) * 2013-12-06 2016-03-15 Freescale Semiconductor, Inc. Pressure sensor with built-in calibration capability
US9346671B2 (en) * 2014-02-04 2016-05-24 Freescale Semiconductor, Inc. Shielding MEMS structures during wafer dicing
US9107333B1 (en) 2014-02-25 2015-08-11 Avago Technologies General Ip (Singapore) Pte. Ltd. Molded leadframe for PCB-to-PCB connection
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US9859193B2 (en) * 2014-06-24 2018-01-02 Ibis Innotech Inc. Package structure
EP3216229A1 (en) 2014-11-06 2017-09-13 Robert Bosch GmbH Lead frame-based chip carrier used in the fabrication oe mems transducer packages
TWI539831B (zh) * 2014-12-05 2016-06-21 財團法人工業技術研究院 微機電麥克風封裝
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US9802813B2 (en) * 2014-12-24 2017-10-31 Stmicroelectronics (Malta) Ltd Wafer level package for a MEMS sensor device and corresponding manufacturing process
US10194251B2 (en) 2015-10-07 2019-01-29 Tdk Corporation Top port microphone with enlarged back volume
EP3211394B1 (en) * 2016-02-29 2021-03-31 Melexis Technologies NV Semiconductor pressure sensor for harsh media application
US10998124B2 (en) 2016-05-06 2021-05-04 Vishay Dale Electronics, Llc Nested flat wound coils forming windings for transformers and inductors
JP6607571B2 (ja) * 2016-07-28 2019-11-20 株式会社東海理化電機製作所 半導体装置の製造方法
JP7160438B2 (ja) 2016-08-31 2022-10-25 ヴィシェイ デール エレクトロニクス エルエルシー 低い直流抵抗を有す高電流コイルを備えた誘導子
CN110104606A (zh) * 2019-05-08 2019-08-09 苏州新沃微电子有限公司 一种mems红外传感器的封装结构
USD1034462S1 (en) 2021-03-01 2024-07-09 Vishay Dale Electronics, Llc Inductor package
US11948724B2 (en) 2021-06-18 2024-04-02 Vishay Dale Electronics, Llc Method for making a multi-thickness electro-magnetic device
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Also Published As

Publication number Publication date
JP2013516329A (ja) 2013-05-13
CN102714200B (zh) 2015-09-30
US20110156176A1 (en) 2011-06-30
CN102714200A (zh) 2012-10-03
US8530981B2 (en) 2013-09-10
US20140011313A1 (en) 2014-01-09
WO2011082214A2 (en) 2011-07-07
US8916408B2 (en) 2014-12-23
WO2011082214A3 (en) 2011-11-10
EP2519970A4 (en) 2014-11-26
EP2519970A2 (en) 2012-11-07

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