JP5806300B2 - 加熱環状チャック - Google Patents
加熱環状チャック Download PDFInfo
- Publication number
- JP5806300B2 JP5806300B2 JP2013514159A JP2013514159A JP5806300B2 JP 5806300 B2 JP5806300 B2 JP 5806300B2 JP 2013514159 A JP2013514159 A JP 2013514159A JP 2013514159 A JP2013514159 A JP 2013514159A JP 5806300 B2 JP5806300 B2 JP 5806300B2
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- electrostatic
- clamp
- selectively
- clamping device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012545 processing Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- 230000003068 static effect Effects 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 description 24
- 239000004065 semiconductor Substances 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 18
- 238000010884 ion-beam technique Methods 0.000 description 16
- 150000002500 ions Chemical class 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35266510P | 2010-06-08 | 2010-06-08 | |
US61/352,665 | 2010-06-08 | ||
PCT/US2011/001034 WO2011155987A1 (en) | 2010-06-08 | 2011-06-08 | Heated annulus chuck |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013534049A JP2013534049A (ja) | 2013-08-29 |
JP5806300B2 true JP5806300B2 (ja) | 2015-11-10 |
Family
ID=44546081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013514159A Active JP5806300B2 (ja) | 2010-06-08 | 2011-06-08 | 加熱環状チャック |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5806300B2 (ko) |
KR (1) | KR101849392B1 (ko) |
CN (1) | CN102934219B (ko) |
WO (1) | WO2011155987A1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150066511A (ko) * | 2012-06-12 | 2015-06-16 | 액셀리스 테크놀러지스, 인크. | 피가공재 캐리어 |
KR102356531B1 (ko) | 2016-06-02 | 2022-01-27 | 액셀리스 테크놀러지스, 인크. | 웨이퍼를 가열 또는 냉각하기 위한 장치 및 방법 |
US9911636B1 (en) | 2016-09-30 | 2018-03-06 | Axcelis Technologies, Inc. | Multiple diameter in-vacuum wafer handling |
US10186446B2 (en) * | 2016-09-30 | 2019-01-22 | Axcelis Technology, Inc. | Adjustable circumference electrostatic clamp |
JP6238094B1 (ja) | 2016-11-21 | 2017-11-29 | 日新イオン機器株式会社 | 半導体製造装置、基板支持装置の冷却方法 |
JP7306894B2 (ja) * | 2019-06-27 | 2023-07-11 | 株式会社アルバック | 真空装置、吸着装置、吸着方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07297266A (ja) * | 1994-04-28 | 1995-11-10 | Fujitsu Ltd | 静電チャックとウェハ吸着方法 |
JPH1022371A (ja) * | 1996-07-03 | 1998-01-23 | Nippon Telegr & Teleph Corp <Ntt> | 試料固定装置 |
US6034863A (en) * | 1997-11-12 | 2000-03-07 | Applied Materials, Inc. | Apparatus for retaining a workpiece in a process chamber within a semiconductor wafer processing system |
JP2001077184A (ja) * | 1999-08-31 | 2001-03-23 | Ulvac Japan Ltd | 静電吸着装置及びこれを備えた真空処理装置 |
US6741446B2 (en) * | 2001-03-30 | 2004-05-25 | Lam Research Corporation | Vacuum plasma processor and method of operating same |
JP3992018B2 (ja) | 2003-07-23 | 2007-10-17 | 松下電器産業株式会社 | プラズマ処理装置 |
CN100383951C (zh) * | 2003-07-23 | 2008-04-23 | 松下电器产业株式会社 | 等离子加工设备 |
JP2005294654A (ja) * | 2004-04-02 | 2005-10-20 | Jeol Ltd | 基板ホルダ |
JP2008021686A (ja) | 2006-07-10 | 2008-01-31 | Shin Etsu Chem Co Ltd | 基板保持トレー |
JP2008047841A (ja) * | 2006-08-21 | 2008-02-28 | Advantest Corp | 保持冶具 |
US8422193B2 (en) * | 2006-12-19 | 2013-04-16 | Axcelis Technologies, Inc. | Annulus clamping and backside gas cooled electrostatic chuck |
JP4990636B2 (ja) * | 2007-01-11 | 2012-08-01 | 株式会社アルバック | 搬送トレーを用いた真空処理装置 |
JP2008244408A (ja) * | 2007-03-29 | 2008-10-09 | Canon Anelva Corp | 静電吸着ホルダー及び基板処理装置 |
US7972444B2 (en) * | 2007-11-07 | 2011-07-05 | Mattson Technology, Inc. | Workpiece support with fluid zones for temperature control |
-
2011
- 2011-06-08 WO PCT/US2011/001034 patent/WO2011155987A1/en active Application Filing
- 2011-06-08 CN CN201180028550.9A patent/CN102934219B/zh active Active
- 2011-06-08 JP JP2013514159A patent/JP5806300B2/ja active Active
- 2011-06-08 KR KR1020137000266A patent/KR101849392B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN102934219A (zh) | 2013-02-13 |
WO2011155987A1 (en) | 2011-12-15 |
JP2013534049A (ja) | 2013-08-29 |
KR101849392B1 (ko) | 2018-04-16 |
CN102934219B (zh) | 2015-09-09 |
KR20130112022A (ko) | 2013-10-11 |
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