JP5796209B2 - 発光装置及びそれを用いた照明装置 - Google Patents
発光装置及びそれを用いた照明装置 Download PDFInfo
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- JP5796209B2 JP5796209B2 JP2011115107A JP2011115107A JP5796209B2 JP 5796209 B2 JP5796209 B2 JP 5796209B2 JP 2011115107 A JP2011115107 A JP 2011115107A JP 2011115107 A JP2011115107 A JP 2011115107A JP 5796209 B2 JP5796209 B2 JP 5796209B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Led Device Packages (AREA)
Description
10 照明装置
2 LED(固体発光素子)
3 基板
4 光学部材
41 入射面
41a 収容部
42 第1の透過面
42a 凹状湾曲面
43 全反射面
43a 凸状湾曲面
44 第2の透過面
5 器具本体(保持部材)
6 施工面
Claims (8)
- 固体発光素子と、前記固体発光素子が実装される基板と、前記固体発光素子の光導出方向に設けられた光学部材と、を備え、
前記光学部材は、
前記固体発光素子及び前記基板を覆うように配され、且つ前記基板の周縁部よりも外周側に延設されており、
前記固体発光素子と対向して、該固体発光素子からの出射光を入射する入射面と、
前記入射面と対峙し、該入射面から入射された光を透過する第1の透過面と、
前記第1の透過面の外周側に位置し、前記入射面から入射された光を全反射する全反射面と、
前記基板の周縁部の外周側に位置し、前記全反射面で全反射された光を透過する第2の透過面と、を有し、
前記第1の透過面は、前記固体発光素子方向に凹状となる凹状湾曲面を有し、
前記全反射面は、前記固体発光素子の光導出方向に凸状となる凸状湾曲面を有し、
前記第1の透過面及び前記全反射面は、滑らかに連続する曲面として形成されていることを特徴とすることを特徴とする発光装置。 - 前記全反射面の凸状湾曲面は、等角螺旋形状又はそれに準じた形状であることを特徴とする請求項1に記載の発光装置。
- 前記基板上に複数の固体発光素子が実装され、 前記光学部材は、前記複数の固体発光素子のうち少なくとも前記基板の周縁部に近接する固体発光素子に設けられていることを特徴とする請求項1又は請求項2に記載の発光装置。
- 前記基板上に複数の固体発光素子が実装され、 前記光学部材は、複数の前記固体発光素子を覆うように設けられていることを特徴とする請求項1又は請求項2の発光装置。
- 前記第2の透過面は、内周側から外周側へ前記基板を含む平面から次第に離間するように湾曲されていることを特徴とする請求項1乃至請求項4のいずれか一項に記載の発光装置。
- 前記固体発光素子、前記基板及び前記光学部材を保持する保持部材を備え、 前記保持部材は、施工面から突出しており、前記光学部材を前記施工面から所定距離の位置で保持するように構成されていることを特徴とする請求項1乃至請求項4のいずれか一項に記載の発光装置。
- 前記固体発光素子、前記基板及び前記光学部材を保持する保持部材を備え、 前記保持部材が、施工面に埋め込まれるように構成されていることを特徴とする請求項5に記載の発光装置。
- 請求項1乃至請求項7のいずれか一項に記載の発光装置を用いた照明装置。
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JP2012244070A JP2012244070A (ja) | 2012-12-10 |
JP5796209B2 true JP5796209B2 (ja) | 2015-10-21 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6065280B2 (ja) * | 2013-05-17 | 2017-01-25 | パナソニックIpマネジメント株式会社 | 発光モジュールおよび照明器具 |
KR102094806B1 (ko) * | 2013-06-19 | 2020-03-31 | 엘지디스플레이 주식회사 | 발광다이오드 팩키지 및 이를 포함한 액정표시장치 |
KR102108204B1 (ko) | 2013-08-26 | 2020-05-08 | 서울반도체 주식회사 | 면 조명용 렌즈 및 발광 모듈 |
TWI532222B (zh) * | 2015-04-21 | 2016-05-01 | 隆達電子股份有限公司 | 發光裝置及其透鏡結構 |
JP6506899B2 (ja) * | 2015-10-08 | 2019-04-24 | 日亜化学工業株式会社 | 発光装置、集積型発光装置および発光モジュール |
JP6524904B2 (ja) | 2015-12-22 | 2019-06-05 | 日亜化学工業株式会社 | 発光装置 |
Family Cites Families (6)
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JP2007102139A (ja) * | 2004-12-03 | 2007-04-19 | Sony Corp | 光取出しレンズ、発光素子組立体、面状光源装置、及び、カラー液晶表示装置組立体 |
JP4870950B2 (ja) * | 2005-08-09 | 2012-02-08 | 株式会社光波 | 光放射用光源ユニット及びそれを用いた面状発光装置 |
JP4677966B2 (ja) * | 2006-09-21 | 2011-04-27 | 東芝ライテック株式会社 | 照明装置 |
JP2009164046A (ja) * | 2008-01-09 | 2009-07-23 | Sadao Momiyama | Led照明器具 |
JP5025612B2 (ja) * | 2008-10-06 | 2012-09-12 | 三菱電機株式会社 | Led光源及びそれを用いた発光体 |
JP5486894B2 (ja) * | 2009-10-19 | 2014-05-07 | スタンレー電気株式会社 | 車両用前照灯 |
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