JP5899476B2 - 発光装置及びそれを用いた照明装置 - Google Patents
発光装置及びそれを用いた照明装置 Download PDFInfo
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- JP5899476B2 JP5899476B2 JP2011138900A JP2011138900A JP5899476B2 JP 5899476 B2 JP5899476 B2 JP 5899476B2 JP 2011138900 A JP2011138900 A JP 2011138900A JP 2011138900 A JP2011138900 A JP 2011138900A JP 5899476 B2 JP5899476 B2 JP 5899476B2
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- light
- light emitting
- led
- wavelength conversion
- emitting device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Description
10 照明装置
2 LED(固体発光素子)
3 基板
31 配線パターン
32 ワイヤ
4 波長変換部材
Claims (4)
- 複数の固体発光素子と、前記固体発光素子が実装される基板と、前記固体発光素子からの光を波長変換する波長変換部材と、前記基板に設けられた配線パターンと前記固体発光素子とを電気的に接続するワイヤと、を備え、
前記波長変換部材は、蛍光体を含有する透明樹脂部材から成り、前記固体発光素子毎にドット状に設けられて該固体発光素子の発光面を被覆し、
隣り合う前記固体発光素子から導出される前記ワイヤのうち、少なくとも1つのワイヤは、他のワイヤとは異なる方向に導出され、
前記波長変換部材は、前記ワイヤの導出方向の直径が短く、これと直交する方向の直径が長いことを特徴とする発光装置。 - 隣り合う前記固体発光素子から導出される前記ワイヤのうち、少なくとも1つのワイヤは、他のワイヤとは直交する方向に導出されることを特徴とする請求項1に記載の発光装置。
- 前記波長変換部材は、アレイ状に配された複数の前記固体発光素子を被覆していることを特徴とする請求項1又は請求項2に記載の発光装置。
- 請求項1乃至請求項3のいずれか一項に記載の発光装置を用いた照明装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2011138900A JP5899476B2 (ja) | 2011-06-22 | 2011-06-22 | 発光装置及びそれを用いた照明装置 |
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JP2011138900A JP5899476B2 (ja) | 2011-06-22 | 2011-06-22 | 発光装置及びそれを用いた照明装置 |
Publications (2)
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JP2013008754A JP2013008754A (ja) | 2013-01-10 |
JP5899476B2 true JP5899476B2 (ja) | 2016-04-06 |
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JP2011138900A Active JP5899476B2 (ja) | 2011-06-22 | 2011-06-22 | 発光装置及びそれを用いた照明装置 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014135437A (ja) * | 2013-01-11 | 2014-07-24 | Panasonic Corp | 発光モジュール、照明装置および照明器具 |
JP2015039975A (ja) * | 2013-08-22 | 2015-03-02 | 株式会社World Wing | 自動車用照明装置の製造方法 |
US11037911B2 (en) | 2017-12-27 | 2021-06-15 | Nichia Corporation | Light emitting device |
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EP1908124B1 (en) * | 2005-07-15 | 2015-06-24 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting module and corresponding circuit board |
JP5106862B2 (ja) * | 2007-01-15 | 2012-12-26 | 昭和電工株式会社 | 発光ダイオードパッケージ |
WO2009141960A1 (en) * | 2008-05-20 | 2009-11-26 | Panasonic Corporation | Semiconductor light-emitting device as well as light source device and lighting system including the same |
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