JP6233750B2 - 発光装置およびその製造方法、照明用光源、並びに照明装置 - Google Patents
発光装置およびその製造方法、照明用光源、並びに照明装置 Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S8/00—Lighting devices intended for fixed installation
- F21S8/02—Lighting devices intended for fixed installation of recess-mounted type, e.g. downlighters
- F21S8/026—Lighting devices intended for fixed installation of recess-mounted type, e.g. downlighters intended to be recessed in a ceiling or like overhead structure, e.g. suspended ceiling
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2113/00—Combination of light sources
- F21Y2113/10—Combination of light sources of different colours
- F21Y2113/13—Combination of light sources of different colours comprising an assembly of point-like light sources
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Description
まず、実施の形態1について説明する。
以下、実施の形態1に係る発光装置の構成について図面を用いて説明する。図1は、実施の形態1に係る発光装置の外観斜視図である。図2は、実施の形態1に係る発光装置100の平面図である。図3は、図2のA−A線における発光装置の断面図である。なお、図1ではボンディングワイヤの図示は省略され、図2と図3とでは、説明のためにボンディングワイヤの配置が異なっている。
基板10は、例えば、メタルベース基板またはセラミック基板である。また、基板10は、樹脂を基材とする樹脂基板であってもよい。
基板10上に実装される複数の発光素子は、複数の赤色LEDチップ20rと複数の青色LEDチップ20bとを含む。
次に、発光装置100の製造方法について、図4を用いて説明する。図4は、発光装置100の製造方法のフローチャートである。
以上のように、発光装置100は、基板10と、第一発光素子列21および第二発光素子列22とを少なくとも備える。第一発光素子列21および第二発光素子列22のそれぞれは、発光色が互いに異なる赤色LEDチップ20rおよび青色LEDチップ20bを含む基板10に実装された複数のLEDチップが直列接続されることにより構成される。また、第一発光素子列21と第二発光素子列22とは並列接続されている。
上記実施の形態1では、赤色LEDチップ20rおよび青色LEDチップ20bを含む基板10に実装された複数のLEDチップは、ボンディングワイヤ50によって、Chip To Chipで直列接続された。しかしながら、複数のLEDチップは、基板10上に設けられた配線(金属膜)を介して接続されてもよい。
上記実施の形態1では、各発光素子列を構成するLEDチップ(赤色LEDチップ20rおよび青色LEDチップ20b)は、個別に(1つずつ)ドット状に封止されたが、各発光素子列を構成するLEDチップは、複数個ずつドット状に封止されてもよい。
次に、実施の形態2に係る電球形ランプ150の構成について、図10を用いて説明する。
次に、実施の形態3に係る照明装置200について、図11および図12を用いて説明する。
以上、本発明に係る発光装置およびその製造方法、照明用光源、並びに照明装置について、実施の形態1〜3に基づいて説明したが、本発明は、これらの実施の形態に限定されるものではない。
20r 赤色LEDチップ(第一発光素子)
20b 青色LEDチップ(第二発光素子)
21、21a、21b 第一発光素子列
22、22a、22b 第二発光素子列
23、23a、23b 第三発光素子列
30a 第一封止部材
30b 第二封止部材
40a、40b、40c 配線
50 ボンディングワイヤ
60 ディスペンサ
100、100a、100b 発光装置
150 電球形ランプ(照明用光源)
151 グローブ
153 支柱
154 支持板
156 筐体
158 口金
200 照明装置
210 基部
211 放熱フィン
220 枠体部
221 コーン部
222 枠体本体部
230 反射板
240 透光パネル
250 点灯装置
260 端子台
270 取付板
280 天板
Claims (12)
- 基板と、
発光色の異なる第一発光素子および第二発光素子を含む前記基板に実装された複数の発光素子が直列接続されることによりそれぞれが構成され、互いに並列接続された第一発光素子列および第二発光素子列とを備え、
前記第一発光素子は、第一封止部材によってドット状に封止され、
前記第二発光素子は、前記第一封止部材とは異なる第二封止部材によってドット状に封止され、
前記第二封止部材は、前記第二発光素子が発する光の一部を波長変換する蛍光体を含む透光性の樹脂材料であり、
前記第一封止部材の一部は、前記第二封止部材の一部に上方から重なる
発光装置。 - 前記第一発光素子は、前記第一封止部材によって個別にドット状に封止され、
前記第二発光素子は、前記第二封止部材によって個別にドット状に封止される
請求項1に記載の発光装置。 - 前記第一発光素子は、赤色の光を発し、
前記第二発光素子は、青色の光を発する
請求項1または2に記載の発光装置。 - 前記第一発光素子は、発光スペクトルのピーク波長が600nm以上645nm以下の赤色LEDであり、
前記第二発光素子は、発光スペクトルのピーク波長が430nm以上500nm以下の青色LEDである
請求項3に記載の発光装置。 - 前記第一封止部材は、前記蛍光体を含まない透光性の樹脂材料である
請求項1〜4のいずれか1項に記載の発光装置。 - 前記第二封止部材は、前記第一封止部材に前記蛍光体が加えられた透光性の樹脂材料である
請求項5に記載の発光装置。 - 前記蛍光体の発光スペクトルのピーク波長は、530nm以上570nm以下である
請求項1〜6のいずれか1項に記載の発光装置。 - 前記第一発光素子列および前記第二発光素子列のそれぞれは、複数の前記第一発光素子を有し、
前記第一発光素子列および前記第二発光素子列のそれぞれにおいて、一の前記第一発光素子は、他の前記第一発光素子と隣り合わない
請求項1〜7のいずれか1項に記載の発光装置。 - 請求項1〜8のいずれか1項に記載の発光装置の製造方法であって、
前記第一発光素子に対応する固定位置から前記第一封止部材を塗布することによって当該第一発光素子をドット状に封止する第一工程と、
前記第二発光素子に対応する固定位置から前記第二封止部材を塗布することによって当該第二発光素子をドット状に封止する第二工程とを含む
発光装置の製造方法。 - 前記第一封止部材は、蛍光体を含まない透光性の樹脂材料であり、
前記第二封止部材は、蛍光体を含む透光性の樹脂材料であり
前記第一工程は、前記第二工程の後に行われる
請求項9に記載の発光装置の製造方法。 - 請求項1〜8のいずれか1項に記載の発光装置を備える
照明用光源。 - 請求項1〜8のいずれか1項に記載の発光装置を備える
照明装置。
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JP2014051140A JP6233750B2 (ja) | 2014-03-14 | 2014-03-14 | 発光装置およびその製造方法、照明用光源、並びに照明装置 |
US14/643,412 US20150263246A1 (en) | 2014-03-14 | 2015-03-10 | Light-emitting device and method of manufacturing the same, illumination light source, and illumination device |
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JP2014051140A JP6233750B2 (ja) | 2014-03-14 | 2014-03-14 | 発光装置およびその製造方法、照明用光源、並びに照明装置 |
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JP2015176949A JP2015176949A (ja) | 2015-10-05 |
JP6233750B2 true JP6233750B2 (ja) | 2017-11-22 |
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CN103890488B (zh) * | 2012-07-25 | 2018-02-16 | 松下知识产权经营株式会社 | 发光模块 |
JP2014078467A (ja) * | 2012-10-12 | 2014-05-01 | Panasonic Corp | 照明器具、照明装置および発光モジュール |
US10205065B2 (en) * | 2015-04-02 | 2019-02-12 | Sharp Kabushiki Kaisha | Light-emitting device |
JP6759556B2 (ja) * | 2015-10-30 | 2020-09-23 | 日亜化学工業株式会社 | 照明装置 |
TW201721053A (zh) * | 2015-12-02 | 2017-06-16 | 羅冠傑 | 燈殼整合型發光二極體及其製作方法 |
CN106969277A (zh) * | 2017-06-02 | 2017-07-21 | 横店集团得邦照明股份有限公司 | 一种绝缘固化型led灯 |
CN110212061B (zh) * | 2018-02-28 | 2023-08-22 | 日亚化学工业株式会社 | 发光装置的制造方法以及发光装置 |
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US6636003B2 (en) * | 2000-09-06 | 2003-10-21 | Spectrum Kinetics | Apparatus and method for adjusting the color temperature of white semiconduct or light emitters |
US8168989B2 (en) * | 2005-09-20 | 2012-05-01 | Renesas Electronics Corporation | LED light source and method of manufacturing the same |
KR101039957B1 (ko) * | 2008-11-18 | 2011-06-09 | 엘지이노텍 주식회사 | 발광 장치 및 이를 구비한 디스플레이 장치 |
JP5178623B2 (ja) * | 2009-05-08 | 2013-04-10 | サンユレック株式会社 | 照明装置の製造方法 |
US8820950B2 (en) * | 2010-03-12 | 2014-09-02 | Toshiba Lighting & Technology Corporation | Light emitting device and illumination apparatus |
JP2011192703A (ja) * | 2010-03-12 | 2011-09-29 | Toshiba Lighting & Technology Corp | 発光装置及び照明装置 |
US8414145B2 (en) * | 2010-09-06 | 2013-04-09 | Kabushiki Kaisha Toshiba | Light emitting device |
JP2012109397A (ja) * | 2010-11-17 | 2012-06-07 | Panasonic Corp | 発光装置 |
EP3483496B1 (en) * | 2011-11-07 | 2020-07-29 | Kabushiki Kaisha Toshiba | White light source and white light source system including the same |
JP2013197294A (ja) * | 2012-03-19 | 2013-09-30 | Toshiba Lighting & Technology Corp | 照明装置 |
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US20150263246A1 (en) | 2015-09-17 |
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