JP5794155B2 - 新規な2,7−ビスアントリルナフタレン化合物およびこれを用いた有機電界発光素子 - Google Patents

新規な2,7−ビスアントリルナフタレン化合物およびこれを用いた有機電界発光素子 Download PDF

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Publication number
JP5794155B2
JP5794155B2 JP2012011698A JP2012011698A JP5794155B2 JP 5794155 B2 JP5794155 B2 JP 5794155B2 JP 2012011698 A JP2012011698 A JP 2012011698A JP 2012011698 A JP2012011698 A JP 2012011698A JP 5794155 B2 JP5794155 B2 JP 5794155B2
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derivatives
formula
compound
bis
light emitting
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Japanese (ja)
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JP2012188416A (ja
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国防 王
国防 王
洋平 小野
洋平 小野
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JNC Corp
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JNC Corp
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/16Electron transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17Carrier injection layers
    • H10K50/171Electron injection layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/631Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/853Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2012011698A 2011-02-24 2012-01-24 新規な2,7−ビスアントリルナフタレン化合物およびこれを用いた有機電界発光素子 Active JP5794155B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012011698A JP5794155B2 (ja) 2011-02-24 2012-01-24 新規な2,7−ビスアントリルナフタレン化合物およびこれを用いた有機電界発光素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011038499 2011-02-24
JP2011038499 2011-02-24
JP2012011698A JP5794155B2 (ja) 2011-02-24 2012-01-24 新規な2,7−ビスアントリルナフタレン化合物およびこれを用いた有機電界発光素子

Publications (2)

Publication Number Publication Date
JP2012188416A JP2012188416A (ja) 2012-10-04
JP5794155B2 true JP5794155B2 (ja) 2015-10-14

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ID=46807659

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JP2012011698A Active JP5794155B2 (ja) 2011-02-24 2012-01-24 新規な2,7−ビスアントリルナフタレン化合物およびこれを用いた有機電界発光素子

Country Status (4)

Country Link
JP (1) JP5794155B2 (ko)
KR (1) KR101890719B1 (ko)
CN (1) CN102675032B (ko)
TW (1) TWI561502B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6359256B2 (ja) * 2013-09-25 2018-07-18 出光興産株式会社 有機エレクトロルミネッセンス素子、および電子機器
WO2018150832A1 (ja) * 2017-02-16 2018-08-23 学校法人関西学院 有機電界発光素子
CN110627602A (zh) * 2018-06-22 2019-12-31 天津大学 有机光电半导体材料及其合成方法和应用
JP7325731B2 (ja) 2018-08-23 2023-08-15 国立大学法人九州大学 有機エレクトロルミネッセンス素子
KR20220013228A (ko) * 2020-07-24 2022-02-04 주식회사 엘지화학 신규한 화합물 및 이를 이용한 유기 발광 소자

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6421729A (en) 1987-07-15 1989-01-25 Fujitsu Ltd Multi-track jump system for optical disk device
US5935721A (en) * 1998-03-20 1999-08-10 Eastman Kodak Company Organic electroluminescent elements for stable electroluminescent
JP4094203B2 (ja) 2000-03-30 2008-06-04 出光興産株式会社 有機エレクトロルミネッセンス素子及び有機発光媒体
JP4524070B2 (ja) 2002-04-22 2010-08-11 株式会社林原生物化学研究所 有機電界発光素子
JP2005139390A (ja) 2003-11-10 2005-06-02 Sony Corp 含クマリン発光性有機材料及び有機el素子
DE102005058557A1 (de) 2005-12-08 2007-06-14 Merck Patent Gmbh Organische Elektrolumineszenzvorrichtung
CN101374789B (zh) * 2006-01-27 2014-04-30 Lg化学株式会社 新的蒽衍生物、其制备方法以及采用该蒽衍生物的有机发光二极管
KR100852328B1 (ko) * 2006-03-15 2008-08-14 주식회사 엘지화학 신규한 안트라센 유도체, 이의 제조방법 및 이를 이용한유기 전기 발광 소자
KR101115255B1 (ko) * 2008-07-11 2012-02-15 주식회사 엘지화학 신규한 안트라센 유도체 및 이를 이용한 유기전자소자
KR101551207B1 (ko) * 2008-09-04 2015-09-08 롬엔드하스전자재료코리아유한회사 신규한 유기 발광 화합물 및 이를 발광재료로서 채용하고 있는 유기 발광 소자

Also Published As

Publication number Publication date
KR20120097322A (ko) 2012-09-03
TWI561502B (en) 2016-12-11
TW201235332A (en) 2012-09-01
CN102675032B (zh) 2016-08-03
KR101890719B1 (ko) 2018-08-22
CN102675032A (zh) 2012-09-19
JP2012188416A (ja) 2012-10-04

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