JP5793995B2 - リードフレーム、及び、パワーモジュール - Google Patents

リードフレーム、及び、パワーモジュール Download PDF

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Publication number
JP5793995B2
JP5793995B2 JP2011143033A JP2011143033A JP5793995B2 JP 5793995 B2 JP5793995 B2 JP 5793995B2 JP 2011143033 A JP2011143033 A JP 2011143033A JP 2011143033 A JP2011143033 A JP 2011143033A JP 5793995 B2 JP5793995 B2 JP 5793995B2
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Japan
Prior art keywords
lead
semiconductor element
leads
frame
guide frame
Prior art date
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Expired - Fee Related
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JP2011143033A
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English (en)
Japanese (ja)
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JP2013012525A5 (enExample
JP2013012525A (ja
Inventor
卓矢 門口
卓矢 門口
三好　達也
達也 三好
知巳 奥村
知巳 奥村
崇功 川島
崇功 川島
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Toyota Motor Corp
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Toyota Motor Corp
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Publication date
Priority to JP2011143033A priority Critical patent/JP5793995B2/ja
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Priority to CN201280032343.5A priority patent/CN103620768A/zh
Priority to PCT/JP2012/061272 priority patent/WO2013001905A1/ja
Priority to DE112012002724.8T priority patent/DE112012002724T5/de
Priority to US14/129,342 priority patent/US20140145193A1/en
Publication of JP2013012525A publication Critical patent/JP2013012525A/ja
Publication of JP2013012525A5 publication Critical patent/JP2013012525A5/ja
Application granted granted Critical
Publication of JP5793995B2 publication Critical patent/JP5793995B2/ja
Priority to US15/195,466 priority patent/US20160307829A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H01L2924/0001—Technical content checked by a classifier
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    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Automation & Control Theory (AREA)
  • Inverter Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2011143033A 2011-06-28 2011-06-28 リードフレーム、及び、パワーモジュール Expired - Fee Related JP5793995B2 (ja)

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JP2011143033A JP5793995B2 (ja) 2011-06-28 2011-06-28 リードフレーム、及び、パワーモジュール
PCT/JP2012/061272 WO2013001905A1 (ja) 2011-06-28 2012-04-26 リードフレーム、及び、パワーモジュール
DE112012002724.8T DE112012002724T5 (de) 2011-06-28 2012-04-26 Leiterrahmen und Leistungsmodul
US14/129,342 US20140145193A1 (en) 2011-06-28 2012-04-26 Lead frame and power module
CN201280032343.5A CN103620768A (zh) 2011-06-28 2012-04-26 引线框架及功率组件
US15/195,466 US20160307829A1 (en) 2011-06-28 2016-06-28 Lead frame and power module

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JP6114134B2 (ja) * 2013-07-29 2017-04-12 トヨタ自動車株式会社 リードフレーム、電力変換装置、半導体装置及び半導体装置の製造方法
EP3726575A1 (en) 2013-11-05 2020-10-21 Mitsubishi Electric Corporation A method of using a semiconductor module
US10361147B1 (en) 2018-06-28 2019-07-23 Ford Global Technologies, Llc Inverter power module lead frame with enhanced common source inductance
US11502045B2 (en) * 2019-01-23 2022-11-15 Texas Instruments Incorporated Electronic device with step cut lead
JP7479759B2 (ja) 2020-06-02 2024-05-09 三菱電機株式会社 半導体装置の製造方法、および、半導体装置
JP7589560B2 (ja) * 2021-01-15 2024-11-26 株式会社デンソー 電気機器と電気機器の製造方法
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US6225684B1 (en) * 2000-02-29 2001-05-01 Texas Instruments Tucson Corporation Low temperature coefficient leadframe
CN1265465C (zh) * 2001-04-04 2006-07-19 三菱电机株式会社 半导体器件
US7884454B2 (en) * 2005-01-05 2011-02-08 Alpha & Omega Semiconductor, Ltd Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package
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