DE112012002724T5 - Leiterrahmen und Leistungsmodul - Google Patents

Leiterrahmen und Leistungsmodul Download PDF

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Publication number
DE112012002724T5
DE112012002724T5 DE112012002724.8T DE112012002724T DE112012002724T5 DE 112012002724 T5 DE112012002724 T5 DE 112012002724T5 DE 112012002724 T DE112012002724 T DE 112012002724T DE 112012002724 T5 DE112012002724 T5 DE 112012002724T5
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DE
Germany
Prior art keywords
lead frame
conductor
power module
conductors
wiring
Prior art date
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Withdrawn
Application number
DE112012002724.8T
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German (de)
English (en)
Inventor
Takuya Kadoguchi
Tatsuya Miyoshi
Takanori Kawashima
Tomomi Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Toyota Motor Corp
Original Assignee
Denso Corp
Toyota Motor Corp
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Application filed by Denso Corp, Toyota Motor Corp filed Critical Denso Corp
Publication of DE112012002724T5 publication Critical patent/DE112012002724T5/de
Withdrawn legal-status Critical Current

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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H01L23/49551—Cross section geometry characterised by bent parts
    • H01L23/49555—Cross section geometry characterised by bent parts the bent parts being the outer leads
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
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    • H01L2924/0001—Technical content checked by a classifier
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    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Automation & Control Theory (AREA)
  • Inverter Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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DE102014213439B4 (de) * 2013-07-29 2021-03-25 Denso Corporation Leiterrahmen, Stromumwandlungsvorrichtung, Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
US11894291B2 (en) 2020-06-02 2024-02-06 Mitsubishi Electric Corporation Manufacturing method of semiconductor device and semiconductor device

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JP6001473B2 (ja) * 2013-02-12 2016-10-05 トヨタ自動車株式会社 半導体装置の製造方法
JP6001472B2 (ja) * 2013-02-12 2016-10-05 トヨタ自動車株式会社 半導体装置の製造方法
US9640470B2 (en) 2013-11-05 2017-05-02 Mitsubishi Electric Corporation Semiconductor module
US10361147B1 (en) 2018-06-28 2019-07-23 Ford Global Technologies, Llc Inverter power module lead frame with enhanced common source inductance
US11502045B2 (en) * 2019-01-23 2022-11-15 Texas Instruments Incorporated Electronic device with step cut lead
JP7589560B2 (ja) * 2021-01-15 2024-11-26 株式会社デンソー 電気機器と電気機器の製造方法
JP7292352B2 (ja) * 2021-11-02 2023-06-16 三菱電機株式会社 樹脂封止型半導体装置及び樹脂封止型半導体装置の製造方法
JP7715022B2 (ja) * 2021-11-25 2025-07-30 三菱電機株式会社 半導体装置及び電力変換装置

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JPH03280562A (ja) * 1990-03-29 1991-12-11 Hitachi Ltd リードフレーム及び半導体装置樹脂封止方法
US6225684B1 (en) * 2000-02-29 2001-05-01 Texas Instruments Tucson Corporation Low temperature coefficient leadframe
EP2383788B1 (en) * 2001-04-04 2019-07-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a main base region
US7884454B2 (en) * 2005-01-05 2011-02-08 Alpha & Omega Semiconductor, Ltd Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package
US20060276157A1 (en) * 2005-06-03 2006-12-07 Chen Zhi N Apparatus and methods for packaging antennas with integrated circuit chips for millimeter wave applications
JP5232367B2 (ja) * 2006-07-12 2013-07-10 ルネサスエレクトロニクス株式会社 半導体装置
DE102007020618B8 (de) * 2007-04-30 2009-03-12 Danfoss Silicon Power Gmbh Verfahren zum Herstellen eines festen Leistungsmoduls und damit hergestelltes Transistormodul

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DE102014213439B4 (de) * 2013-07-29 2021-03-25 Denso Corporation Leiterrahmen, Stromumwandlungsvorrichtung, Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
US11894291B2 (en) 2020-06-02 2024-02-06 Mitsubishi Electric Corporation Manufacturing method of semiconductor device and semiconductor device

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