CN103620768A - 引线框架及功率组件 - Google Patents
引线框架及功率组件 Download PDFInfo
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- CN103620768A CN103620768A CN201280032343.5A CN201280032343A CN103620768A CN 103620768 A CN103620768 A CN 103620768A CN 201280032343 A CN201280032343 A CN 201280032343A CN 103620768 A CN103620768 A CN 103620768A
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- lead
- lead frame
- power
- frame
- wiring
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
- H01L23/49555—Cross section geometry characterised by bent parts the bent parts being the outer leads
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
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- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Automation & Control Theory (AREA)
- Inverter Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011143033A JP5793995B2 (ja) | 2011-06-28 | 2011-06-28 | リードフレーム、及び、パワーモジュール |
| JP2011-143033 | 2011-06-28 | ||
| PCT/JP2012/061272 WO2013001905A1 (ja) | 2011-06-28 | 2012-04-26 | リードフレーム、及び、パワーモジュール |
Publications (1)
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| CN103620768A true CN103620768A (zh) | 2014-03-05 |
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| CN201280032343.5A Pending CN103620768A (zh) | 2011-06-28 | 2012-04-26 | 引线框架及功率组件 |
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| US (2) | US20140145193A1 (enExample) |
| JP (1) | JP5793995B2 (enExample) |
| CN (1) | CN103620768A (enExample) |
| DE (1) | DE112012002724T5 (enExample) |
| WO (1) | WO2013001905A1 (enExample) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6001473B2 (ja) * | 2013-02-12 | 2016-10-05 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
| JP6001472B2 (ja) * | 2013-02-12 | 2016-10-05 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
| JP6114134B2 (ja) * | 2013-07-29 | 2017-04-12 | トヨタ自動車株式会社 | リードフレーム、電力変換装置、半導体装置及び半導体装置の製造方法 |
| EP3067925B1 (en) | 2013-11-05 | 2020-12-23 | Mitsubishi Electric Corporation | Semiconductor module |
| US10361147B1 (en) | 2018-06-28 | 2019-07-23 | Ford Global Technologies, Llc | Inverter power module lead frame with enhanced common source inductance |
| US11502045B2 (en) * | 2019-01-23 | 2022-11-15 | Texas Instruments Incorporated | Electronic device with step cut lead |
| JP7479759B2 (ja) | 2020-06-02 | 2024-05-09 | 三菱電機株式会社 | 半導体装置の製造方法、および、半導体装置 |
| JP7589560B2 (ja) * | 2021-01-15 | 2024-11-26 | 株式会社デンソー | 電気機器と電気機器の製造方法 |
| JP7292352B2 (ja) * | 2021-11-02 | 2023-06-16 | 三菱電機株式会社 | 樹脂封止型半導体装置及び樹脂封止型半導体装置の製造方法 |
| JP7715022B2 (ja) * | 2021-11-25 | 2025-07-30 | 三菱電機株式会社 | 半導体装置及び電力変換装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6225684B1 (en) * | 2000-02-29 | 2001-05-01 | Texas Instruments Tucson Corporation | Low temperature coefficient leadframe |
| CN1862833A (zh) * | 2001-04-04 | 2006-11-15 | 三菱电机株式会社 | 半导体器件 |
| US20090008758A1 (en) * | 2005-01-05 | 2009-01-08 | Alpha & Omega Semiconductor Incorporated | Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package |
| CN101496298A (zh) * | 2005-06-03 | 2009-07-29 | 国际商业机器公司 | 用于封装天线和用于毫米波应用的集成电路芯片的装置和方法 |
| CN101689538A (zh) * | 2007-04-30 | 2010-03-31 | 丹福斯矽电有限责任公司 | 制造固定功率模块的方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03280562A (ja) * | 1990-03-29 | 1991-12-11 | Hitachi Ltd | リードフレーム及び半導体装置樹脂封止方法 |
| JP5232367B2 (ja) * | 2006-07-12 | 2013-07-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2011
- 2011-06-28 JP JP2011143033A patent/JP5793995B2/ja not_active Expired - Fee Related
-
2012
- 2012-04-26 DE DE112012002724.8T patent/DE112012002724T5/de not_active Withdrawn
- 2012-04-26 WO PCT/JP2012/061272 patent/WO2013001905A1/ja not_active Ceased
- 2012-04-26 CN CN201280032343.5A patent/CN103620768A/zh active Pending
- 2012-04-26 US US14/129,342 patent/US20140145193A1/en not_active Abandoned
-
2016
- 2016-06-28 US US15/195,466 patent/US20160307829A1/en not_active Abandoned
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6225684B1 (en) * | 2000-02-29 | 2001-05-01 | Texas Instruments Tucson Corporation | Low temperature coefficient leadframe |
| CN1862833A (zh) * | 2001-04-04 | 2006-11-15 | 三菱电机株式会社 | 半导体器件 |
| US20090008758A1 (en) * | 2005-01-05 | 2009-01-08 | Alpha & Omega Semiconductor Incorporated | Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package |
| CN101496298A (zh) * | 2005-06-03 | 2009-07-29 | 国际商业机器公司 | 用于封装天线和用于毫米波应用的集成电路芯片的装置和方法 |
| CN101689538A (zh) * | 2007-04-30 | 2010-03-31 | 丹福斯矽电有限责任公司 | 制造固定功率模块的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20160307829A1 (en) | 2016-10-20 |
| US20140145193A1 (en) | 2014-05-29 |
| JP5793995B2 (ja) | 2015-10-14 |
| WO2013001905A1 (ja) | 2013-01-03 |
| JP2013012525A (ja) | 2013-01-17 |
| DE112012002724T5 (de) | 2014-03-13 |
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Effective date of registration: 20160421 Address after: Aichi Prefecture, Japan Applicant after: Toyota Motor Corp. Address before: Aichi Prefecture, Japan Applicant before: Toyota Motor Corp. Applicant before: DENSO Corp. |
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