JP5779491B2 - ターゲット装置、スパッタリング装置、ターゲット装置の製造方法 - Google Patents

ターゲット装置、スパッタリング装置、ターゲット装置の製造方法 Download PDF

Info

Publication number
JP5779491B2
JP5779491B2 JP2011272742A JP2011272742A JP5779491B2 JP 5779491 B2 JP5779491 B2 JP 5779491B2 JP 2011272742 A JP2011272742 A JP 2011272742A JP 2011272742 A JP2011272742 A JP 2011272742A JP 5779491 B2 JP5779491 B2 JP 5779491B2
Authority
JP
Japan
Prior art keywords
backing plate
target
plate
target device
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011272742A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013124379A (ja
JP2013124379A5 (enExample
Inventor
豊 門脇
豊 門脇
高橋　一寿
一寿 高橋
佐藤　勝
勝 佐藤
林　成福
成福 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2011272742A priority Critical patent/JP5779491B2/ja
Priority to US13/710,775 priority patent/US9139899B2/en
Publication of JP2013124379A publication Critical patent/JP2013124379A/ja
Publication of JP2013124379A5 publication Critical patent/JP2013124379A5/ja
Application granted granted Critical
Publication of JP5779491B2 publication Critical patent/JP5779491B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2011272742A 2011-12-13 2011-12-13 ターゲット装置、スパッタリング装置、ターゲット装置の製造方法 Active JP5779491B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011272742A JP5779491B2 (ja) 2011-12-13 2011-12-13 ターゲット装置、スパッタリング装置、ターゲット装置の製造方法
US13/710,775 US9139899B2 (en) 2011-12-13 2012-12-11 Target device, sputtering apparatus and method for manufacturing a target device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011272742A JP5779491B2 (ja) 2011-12-13 2011-12-13 ターゲット装置、スパッタリング装置、ターゲット装置の製造方法

Publications (3)

Publication Number Publication Date
JP2013124379A JP2013124379A (ja) 2013-06-24
JP2013124379A5 JP2013124379A5 (enExample) 2014-12-18
JP5779491B2 true JP5779491B2 (ja) 2015-09-16

Family

ID=48775834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011272742A Active JP5779491B2 (ja) 2011-12-13 2011-12-13 ターゲット装置、スパッタリング装置、ターゲット装置の製造方法

Country Status (2)

Country Link
US (1) US9139899B2 (enExample)
JP (1) JP5779491B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105331937B (zh) * 2014-07-30 2018-04-13 合肥江丰电子材料有限公司 靶材加工装置以及加工方法
US20160053365A1 (en) * 2014-08-20 2016-02-25 Honeywell International Inc. Encapsulated composite backing plate
CN115612990A (zh) * 2022-10-28 2023-01-17 光洋新材料科技(昆山)有限公司 一种蒸镀坩埚的防黏处理方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5282943A (en) * 1992-06-10 1994-02-01 Tosoh Smd, Inc. Method of bonding a titanium containing sputter target to a backing plate and bonded target/backing plate assemblies produced thereby
US5879524A (en) * 1996-02-29 1999-03-09 Sony Corporation Composite backing plate for a sputtering target
JP3629578B2 (ja) * 1997-09-26 2005-03-16 株式会社小松製作所 Ｔｉ系材料とＣｕ系の接合方法
US6858102B1 (en) * 2000-11-15 2005-02-22 Honeywell International Inc. Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets
JP4820508B2 (ja) 2000-08-30 2011-11-24 株式会社東芝 スパッタリングターゲットとその製造方法、スパッタリング装置、薄膜の製造方法、電子部品の製造方法
US6376281B1 (en) * 2000-10-27 2002-04-23 Honeywell International, Inc. Physical vapor deposition target/backing plate assemblies
CN100526499C (zh) * 2002-10-21 2009-08-12 卡伯特公司 形成溅射靶组件的方法及由此制成的组件
US7431195B2 (en) * 2003-09-26 2008-10-07 Praxair S.T. Technology, Inc. Method for centering a sputter target onto a backing plate and the assembly thereof
US7476289B2 (en) * 2006-06-29 2009-01-13 Applied Materials, Inc. Vacuum elastomer bonding apparatus and method
US8342383B2 (en) * 2006-07-06 2013-01-01 Praxair Technology, Inc. Method for forming sputter target assemblies having a controlled solder thickness
KR20120106950A (ko) * 2009-11-13 2012-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟 및 그 제작 방법 및 트랜지스터

Also Published As

Publication number Publication date
JP2013124379A (ja) 2013-06-24
US9139899B2 (en) 2015-09-22
US20130186752A1 (en) 2013-07-25

Similar Documents

Publication Publication Date Title
JP5362112B2 (ja) スパッタ成膜装置及び防着部材
JP2009287058A (ja) 直流反応性対向ターゲット方式スパッタリング成膜方法、その成膜方法によって形成される純イットリア耐食膜、及び耐食性石英構成体
JP5779491B2 (ja) ターゲット装置、スパッタリング装置、ターゲット装置の製造方法
JP6407857B2 (ja) 間接冷却装置に合ったターゲット
US3492215A (en) Sputtering of material simultaneously evaporated onto the target
US20040173160A1 (en) Apparatus for thin film deposition, especially under reactive conditions
US20140110248A1 (en) Chamber pasting method in a pvd chamber for reactive re-sputtering dielectric material
US5631050A (en) Process of depositing thin film coatings
US7812327B2 (en) High-emissivity radiator
CN104114740B (zh) 低温电弧离子镀涂层
JPS63162861A (ja) 薄膜堆積装置
JP3758248B2 (ja) 化合物薄膜の形成方法
WO2009104567A1 (ja) 立方晶窒化硼素含有皮膜の形成方法
JPS63458A (ja) 真空ア−ク蒸着装置
JPH0273963A (ja) 低温基体への薄膜形成方法
JPH11189872A (ja) 凝縮によって基材の被覆を形成する方法
JPH04276062A (ja) アーク蒸着装置
JP2008258085A (ja) 有機ｅｌ層などの有機層の封止膜の形成方法
EP3671806B1 (en) Magnetron sputtering cathode assembly for an unbalanced magnetron sputtering apparatus
Zeisler et al. Boron stripper foils for particle accelerators
US20180195163A1 (en) Cooling and utilization optimization of heat sensitive bonded metal targets
Clampitt Field emission deposition sources
JPH06116711A (ja) アルミナ膜の製膜方法
JP5856805B2 (ja) 真空部品の製造方法
TWI571521B (zh) 於物理蒸汽沉積期間支持工作件的方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20141031

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141031

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141031

TRDD Decision of grant or rejection written
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150630

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150707

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150713

R150 Certificate of patent or registration of utility model

Ref document number: 5779491

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250