JP5767395B2 - 新規な化合物半導体及びその活用 - Google Patents

新規な化合物半導体及びその活用 Download PDF

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JP5767395B2
JP5767395B2 JP2014503613A JP2014503613A JP5767395B2 JP 5767395 B2 JP5767395 B2 JP 5767395B2 JP 2014503613 A JP2014503613 A JP 2014503613A JP 2014503613 A JP2014503613 A JP 2014503613A JP 5767395 B2 JP5767395 B2 JP 5767395B2
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thermoelectric conversion
compound semiconductor
present
chemical formula
heat treatment
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Japanese (ja)
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JP2014516901A (ja
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パク、チョル−ヒ
キム、テ−フン
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エルジー・ケム・リミテッド
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00—Compounds of cobalt
    • C01G51/006—Compounds containing, besides cobalt, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G30/00—Compounds of antimony
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00—Compounds of cobalt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C01P2002/54—Solid solutions containing elements as dopants one element only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Glass Compositions (AREA)
JP2014503613A 2011-05-13 2012-05-11 新規な化合物半導体及びその活用 Active JP5767395B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
KR10-2011-0045348 2011-05-13
KR10-2011-0045349 2011-05-13
KR20110045348 2011-05-13
KR20110045349 2011-05-13
KR20110049609 2011-05-25
KR10-2011-0049609 2011-05-25
KR10-2012-0050259 2012-05-11
KR1020120050259A KR101380945B1 (ko) 2011-05-13 2012-05-11 신규한 화합물 반도체 및 그 활용
PCT/KR2012/003727 WO2012157905A1 (ko) 2011-05-13 2012-05-11 신규한 화합물 반도체 및 그 활용

Publications (2)

Publication Number Publication Date
JP2014516901A JP2014516901A (ja) 2014-07-17
JP5767395B2 true JP5767395B2 (ja) 2015-08-19

Family

ID=47177144

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014503613A Active JP5767395B2 (ja) 2011-05-13 2012-05-11 新規な化合物半導体及びその活用

Country Status (7)

Country Link
US (1) US8496856B2 (de)
EP (1) EP2708502B1 (de)
JP (1) JP5767395B2 (de)
KR (1) KR101380945B1 (de)
CN (1) CN103502143B (de)
TW (1) TWI469930B (de)
WO (1) WO2012157905A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2708498B1 (de) * 2011-05-13 2017-08-16 LG Chem, Ltd. Neuer verbundhalbleiter und verwendung dafür
WO2012157916A1 (ko) * 2011-05-13 2012-11-22 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
JP6467740B2 (ja) * 2016-11-22 2019-02-13 パナソニックＩｐマネジメント株式会社 熱電変換素子およびその製造方法
KR102003352B1 (ko) * 2017-03-15 2019-07-23 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02199006A (ja) * 1989-01-30 1990-08-07 Agency Of Ind Science & Technol １／２／５の組成を有する多元系金属カルコゲナイド
JP2003173826A (ja) * 2001-12-05 2003-06-20 Mitsubishi Paper Mills Ltd 半導体電極の作製方法、並びにそれを用いた光電変換素子
JP4625905B2 (ja) * 2003-12-05 2011-02-02 独立行政法人産業技術総合研究所 不均一反応を用いた低サイズ分布および蛍光性半導体ナノ粒子の低温合成法
US7462217B2 (en) * 2003-12-08 2008-12-09 E.I. Du Pont De Nemours And Company Method of preparation for the high performance thermoelectric material indium-cobalt-antimony
US7723607B2 (en) * 2004-04-14 2010-05-25 E.I. Du Pont De Nemours And Company High performance thermoelectric materials and their method of preparation
US7648552B2 (en) * 2004-07-23 2010-01-19 Gm Global Technology Operations, Inc. Filled skutterudites for advanced thermoelectric applications
JP5055747B2 (ja) * 2004-11-10 2012-10-24 大日本印刷株式会社 金属酸化物膜の製造方法
EP1938343A4 (de) * 2005-10-17 2010-07-28 Agency Science Tech & Res Neuartiges magnetisches phasenänderungsmaterial
CA2637618C (en) * 2006-02-16 2015-03-31 Brigham Young University Preparation of uniform nanoparticles of ultra-high purity metal oxides, mixed metal oxides, metals, and metal alloys
KR100910173B1 (ko) * 2007-09-10 2009-07-30 충주대학교 산학협력단 ＣｏＳｂ３ 스커테루다이트계 열전재료 및 그 제조방법
EP2242121B1 (de) * 2008-01-23 2018-10-24 Furukawa Co., Ltd. Thermoelektrisches wandlermaterial und thermoelektrisches wandlermodul
JP2009253301A (ja) * 2008-04-04 2009-10-29 Samsung Electronics Co Ltd ジカルコゲナイド熱電材料
KR20090110090A (ko) * 2008-04-17 2009-10-21 엘지전자 주식회사 초음파를 이용한 인듐 셀레나이드 나노화합물의 제조방법및 이를 포함하는 화합물 반도체 태양전지
JP5414700B2 (ja) * 2008-08-29 2014-02-12 エルジー・ケム・リミテッド 新規な熱電変換材料及びその製造方法、並びにそれを用いた熱電変換素子
CN101397612B (zh) * 2008-10-21 2011-05-25 同济大学 一种方钴矿基热电块体材料的制备方法
WO2010135622A1 (en) * 2009-05-21 2010-11-25 E. I. Du Pont De Nemours And Company Copper zinc tin chalcogenide nanoparticles
KR101042575B1 (ko) * 2009-08-11 2011-06-20 충주대학교 산학협력단 Ｉｎ－Ｃｏ－Ｆｅ－Ｓｂ 계 스커테루다이트 열전재료 및 그 제조방법
KR101042574B1 (ko) * 2009-08-11 2011-06-20 충주대학교 산학협력단 Ｉｎ－Ｃｏ－Ｎｉ－Ｓｂ 계 스커테루다이트 열전재료 및 그 제조방법
EP2708498B1 (de) * 2011-05-13 2017-08-16 LG Chem, Ltd. Neuer verbundhalbleiter und verwendung dafür
WO2012157916A1 (ko) * 2011-05-13 2012-11-22 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용

Also Published As

Publication number Publication date
KR20120127302A (ko) 2012-11-21
WO2012157905A1 (ko) 2012-11-22
EP2708502B1 (de) 2017-07-26
CN103502143B (zh) 2016-01-20
EP2708502A1 (de) 2014-03-19
CN103502143A (zh) 2014-01-08
EP2708502A4 (de) 2015-03-18
US8496856B2 (en) 2013-07-30
JP2014516901A (ja) 2014-07-17
TW201305060A (zh) 2013-02-01
TWI469930B (zh) 2015-01-21
KR101380945B1 (ko) 2014-04-01
US20130009107A1 (en) 2013-01-10

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