JP5766663B2 - シリコンマイクロレンズ及び金属反射材を有する裏面イメージセンサピクセル - Google Patents
シリコンマイクロレンズ及び金属反射材を有する裏面イメージセンサピクセル Download PDFInfo
- Publication number
- JP5766663B2 JP5766663B2 JP2012157141A JP2012157141A JP5766663B2 JP 5766663 B2 JP5766663 B2 JP 5766663B2 JP 2012157141 A JP2012157141 A JP 2012157141A JP 2012157141 A JP2012157141 A JP 2012157141A JP 5766663 B2 JP5766663 B2 JP 5766663B2
- Authority
- JP
- Japan
- Prior art keywords
- microlens
- substrate
- image sensor
- front surface
- sensor pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 41
- 239000002184 metal Substances 0.000 title claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 15
- 229910052710 silicon Inorganic materials 0.000 title description 15
- 239000010703 silicon Substances 0.000 title description 15
- 239000000758 substrate Substances 0.000 claims description 135
- 239000000463 material Substances 0.000 claims description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 23
- 229920005591 polysilicon Polymers 0.000 claims description 23
- 238000002955 isolation Methods 0.000 claims description 19
- 238000002161 passivation Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 238000005286 illumination Methods 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14678—Contact-type imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
Claims (19)
- 前面及び裏面を有する基板と、
前記基板内に形成され、前記裏面を通る入射光を受光するように構成された感光素子と、
前記基板内の裏面側に形成され、前記入射光を前記感光素子に向かわせるように構成されたマイクロレンズを囲むシャロートレンチアイソレーション構造と
を含む、
裏面照明イメージセンサピクセル。 - 前記マイクロレンズと前記シャロートレンチアイソレーション構造との間に介在するパ
ッシベーション層を更に含む、
請求項1に記載の裏面照明イメージセンサピクセル。 - 前記裏面上に形成されたカラーフィルタを更に含み、
前記入射光が前記カラーフィルタを通り前記裏面に入射し、
前記カラーフィルタは、緑色フィルタ、赤色フィルタ、青色フィルタ、黄色フィルタ、
シアンフィルタ、及びマゼンタフィルタから成る群から選択されたカラーフィルタを含む、
請求項1に記載の裏面照明イメージセンサピクセル。 - 前記前面に形成された追加のマイクロレンズを更に含み、
前記追加のマイクロレンズは、光が前記前面に垂直な方向に前記追加のマイクロレンズ
から出射するように、前記基板を通過した前記入射光をコリメートするように構成されて
いる、
請求項1に記載の裏面照明イメージセンサピクセル。 - 前記追加のマイクロレンズを覆うように配置された反射構造を更に含み、
前記追加のマイクロレンズは、前記反射構造と前記前面との間に介在し、
前記反射構造は、前記コリメートされた光を、前記基板内の前記感光素子に戻るように
反射するように構成されている、
請求項4に記載の裏面照明イメージセンサピクセル。 - 前面及び裏面を有する基板と、
前記基板内に形成され、前記裏面を通る入射光を受光するように構成された感光素子と、
前記基板内の裏面側に形成され、前記入射光を前記感光素子に向かわせるように構成されたマイクロレンズと
を含む、裏面照明イメージセンサピクセル。 - 前記基板は、所定の材料から形成され、かつ、前記マイクロレンズは、前記所定の材料
から形成される、請求項6に記載の裏面照明イメージセンサピクセル。 - 前記前面に形成された追加のマイクロレンズを更に含み、
前記追加のマイクロレンズは前記基板と一体化され、
前記追加のマイクロレンズは、前記所定の材料から形成されている、
請求項7に記載の裏面照明イメージセンサピクセル。 - 前記裏面にあり、前記マイクロレンズを囲むシャロートレンチアイソレーション構造の
第1のセットと、
前記前面にあり、前記追加のマイクロレンズを囲むシャロートレンチアイソレーション
構造の第2セットと
を更に含む、
請求項8に記載の裏面照明イメージセンサピクセル。 - 前記前面上方に形成され、前記基板内の前記感光素子に戻るように、前記基板を通過し
た光を反射するように構成された反射構造を更に含む、
請求項8に記載の裏面照明イメージセンサピクセル。 - 前面及び裏面を有する基板と、
前記基板内の前面側に形成され、前記裏面を通る入射光を受光するように構成された感光素子と、
前記基板内の裏面側に形成され、前記入射光を前記感光素子に向かわせるように構成され、1.6より大きい屈折率を有するマイクロレンズとを含み、
前記マイクロレンズは、前記裏面側に形成されたポリシリコンマイクロレンズを含む
裏面照明イメージセンサピクセル。 - 前記マイクロレンズを覆うパッシベーション層を更に含む、請求項11に記載の裏面照
明イメージセンサピクセル。 - 前記前面に形成された追加のポリシリコンマイクロレンズと、
前記追加のポリシリコンマイクロレンズの上方に形成され、前記基板内の前記感光素子
に戻るように、前記基板を通過した光を反射するように構成された反射構造と
を更に含む、請求項11に記載の裏面照明イメージセンサピクセル。 - 前記前面に形成され、前記基板と一体化された追加のマイクロレンズであって、前記基
板及び前記追加のマイクロレンズが同一の半導体材料から形成されている、追加のマイク
ロレンズと、
前記追加のマイクロレンズの上方に形成され、前記基板内の前記感光素子に戻るように、前記基板を通過した光を反射するように構成された反射構造と
を更に含む、請求項11に記載の裏面照明イメージセンサピクセル。 - 前面及び裏面を有する基板と、
前記基板内に形成され、前記裏面を通る入射光を受光するように構成された感光素子と、
前記基板の前記前面に形成されるマイクロレンズであって、光が前記前面に垂直な方向に前記マイクロレンズから出射するように、前記基板を通過した前記入射光をコリメートするように構成されたマイクロレンズと
前記基板の裏面の内部に形成された追加のマイクロレンズと、
を含む、裏面照明イメージセンサピクセル。 - 前記前面に形成され、金属ルーティング層と導電性ビア層との交互層を含む誘電体スタ
ックと、
前記前面の上方で、前記誘電体スタック中の前記金属ルーティング層のうちの選択され
た1つの金属ルーティング層内に形成された反射構造であって、前記基板内の前記感光素
子に戻るように、前記基板を通過した光を反射するように構成された反射構造と
を更に含む、請求項15に記載の裏面照明イメージセンサピクセル。 - 前記マイクロレンズは、1.6より大きい屈折率を有する材料から形成されている、請
求項15に記載の裏面照明イメージセンサピクセル。 - 前記マイクロレンズは、前記前面上に形成されたポリシリコンマイクロレンズを含む、
請求項15に記載の裏面照明イメージセンサピクセル。 - 前記マイクロレンズは前記前面に形成され、前記マイクロレンズは、前記基板と一体化
され、前記基板及び前記マイクロレンズは同一の半導体材料から形成され、かつ、前記マ
イクロレンズは、関連するシャロートレンチアイソレーション構造によって囲まれている、請求項15に記載の裏面照明イメージセンサのピクセル。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161557342P | 2011-11-08 | 2011-11-08 | |
US61/557,342 | 2011-11-08 | ||
US13/481,589 US8716823B2 (en) | 2011-11-08 | 2012-05-25 | Backside image sensor pixel with silicon microlenses and metal reflector |
US13/481,589 | 2012-05-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013102124A JP2013102124A (ja) | 2013-05-23 |
JP5766663B2 true JP5766663B2 (ja) | 2015-08-19 |
Family
ID=46601935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012157141A Active JP5766663B2 (ja) | 2011-11-08 | 2012-07-13 | シリコンマイクロレンズ及び金属反射材を有する裏面イメージセンサピクセル |
Country Status (5)
Country | Link |
---|---|
US (1) | US8716823B2 (ja) |
JP (1) | JP5766663B2 (ja) |
KR (1) | KR101458271B1 (ja) |
DE (1) | DE102012213280A1 (ja) |
WO (1) | WO2013070288A1 (ja) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130134292A (ko) * | 2012-05-30 | 2013-12-10 | 삼성전자주식회사 | 이미지 센서, 상기 이미지 센서를 포함하는 이미지 처리 시스템 및 상기 이미지 센서의 제조 방법 |
JP2014011304A (ja) * | 2012-06-29 | 2014-01-20 | Toshiba Corp | 固体撮像装置 |
JP2014093482A (ja) * | 2012-11-06 | 2014-05-19 | Toshiba Corp | 固体撮像装置の製造方法および固体撮像装置 |
US9202833B2 (en) | 2013-08-23 | 2015-12-01 | Semiconductor Components Industries, Llc | Imaging systems with baffle grids |
EP2908341B1 (en) | 2014-02-18 | 2018-07-11 | ams AG | Semiconductor device with surface integrated focusing element |
JP6555956B2 (ja) * | 2014-07-31 | 2019-08-07 | 株式会社半導体エネルギー研究所 | 撮像装置、監視装置、及び電子機器 |
US10134926B2 (en) * | 2015-02-03 | 2018-11-20 | Microsoft Technology Licensing, Llc | Quantum-efficiency-enhanced time-of-flight detector |
US9431452B1 (en) * | 2015-05-13 | 2016-08-30 | Omnivision Technologies, Inc. | Back side illuminated image sensor pixel with dielectric layer reflecting ring |
CN106298819B (zh) * | 2015-06-04 | 2020-10-27 | 联华电子股份有限公司 | 背照式影像感测器及其制作方法 |
US9584744B2 (en) * | 2015-06-23 | 2017-02-28 | Semiconductor Components Industries, Llc | Image sensors with voltage-biased trench isolation structures |
US9698191B2 (en) | 2015-08-21 | 2017-07-04 | Qualcomm Incorporated | System and method to extend near infrared spectral response for imaging systems |
DE102016114804B4 (de) * | 2015-10-20 | 2021-02-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleitervorrichtung und Verfahren für deren Herstellung |
US9847363B2 (en) * | 2015-10-20 | 2017-12-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with a radiation sensing region and method for forming the same |
JPWO2017068713A1 (ja) * | 2015-10-23 | 2018-08-16 | オリンパス株式会社 | 固体撮像装置および撮像装置 |
FR3056333B1 (fr) | 2016-09-22 | 2018-10-19 | Stmicroelectronics (Crolles 2) Sas | Capteur d'images a efficacite quantique amelioree pour les rayonnements infrarouges |
CN107958912B (zh) * | 2016-10-17 | 2020-11-13 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置及其制造方法 |
US10553733B2 (en) | 2016-11-29 | 2020-02-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | QE approach by double-side, multi absorption structure |
CN107910340A (zh) * | 2017-11-01 | 2018-04-13 | 德淮半导体有限公司 | 一种图像传感器及其制备方法 |
US10892295B2 (en) * | 2018-01-10 | 2021-01-12 | Microsoft Technology Licensing, Llc | Germanium-modified, back-side illuminated optical sensor |
CN108288626B (zh) * | 2018-01-30 | 2019-07-02 | 德淮半导体有限公司 | 图像传感器及形成图像传感器的方法 |
CN108807449B (zh) * | 2018-08-24 | 2022-02-08 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
CN111048535B (zh) * | 2018-10-15 | 2022-06-07 | 联华电子股份有限公司 | 影像传感器 |
CN109192745A (zh) * | 2018-10-16 | 2019-01-11 | 德淮半导体有限公司 | 背照式图像传感器及其形成方法 |
JP2020068289A (ja) * | 2018-10-24 | 2020-04-30 | キヤノン株式会社 | 光電変換装置、撮像システム、移動体、および積層用の半導体チップ |
CN111480235B (zh) | 2018-11-23 | 2023-10-27 | 深圳市汇顶科技股份有限公司 | 图像传感器及其制造方法 |
KR20210100413A (ko) | 2020-02-06 | 2021-08-17 | 에스케이하이닉스 주식회사 | 이미지 센서 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2950714B2 (ja) * | 1993-09-28 | 1999-09-20 | シャープ株式会社 | 固体撮像装置およびその製造方法 |
JP2005086186A (ja) | 2003-09-11 | 2005-03-31 | Matsushita Electric Ind Co Ltd | 固体撮像装置とその製造方法 |
KR100593162B1 (ko) * | 2004-03-22 | 2006-06-26 | 매그나칩 반도체 유한회사 | 이미지센서 및 그 제조방법 |
KR100644521B1 (ko) | 2004-07-29 | 2006-11-10 | 매그나칩 반도체 유한회사 | 마이크로렌즈의 겉보기 크기가 향상된 이미지센서 및 그제조 방법 |
US7425460B2 (en) * | 2004-09-17 | 2008-09-16 | California Institute Of Technology | Method for implementation of back-illuminated CMOS or CCD imagers |
JP4448087B2 (ja) * | 2004-12-30 | 2010-04-07 | 東部エレクトロニクス株式会社 | Cmosイメージセンサーとその製造方法 |
US7704778B2 (en) | 2005-02-23 | 2010-04-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Microlens structure for image sensors |
US20080023738A1 (en) * | 2006-07-28 | 2008-01-31 | Micron Technology, Inc. | Silicon microlens array |
JP4667408B2 (ja) * | 2007-02-23 | 2011-04-13 | 富士フイルム株式会社 | 裏面照射型固体撮像素子の製造方法 |
US20080258187A1 (en) | 2007-04-18 | 2008-10-23 | Ladd John W | Methods, systems and apparatuses for the design and use of imager sensors |
JP2008270679A (ja) * | 2007-04-25 | 2008-11-06 | Sony Corp | 固体撮像装置およびその製造方法および撮像装置 |
KR20080097709A (ko) | 2007-05-03 | 2008-11-06 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그의 제조방법 |
KR101439434B1 (ko) * | 2007-10-05 | 2014-09-12 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
JP2009252978A (ja) | 2008-04-04 | 2009-10-29 | Panasonic Corp | 固体撮像素子およびその製造方法 |
US7875948B2 (en) | 2008-10-21 | 2011-01-25 | Jaroslav Hynecek | Backside illuminated image sensor |
JP5365179B2 (ja) * | 2008-12-22 | 2013-12-11 | ソニー株式会社 | 固体撮像装置の製造方法及び固体撮像装置 |
JP2010197821A (ja) * | 2009-02-26 | 2010-09-09 | Sony Corp | レンズの製造方法 |
KR20110083936A (ko) * | 2010-01-15 | 2011-07-21 | 삼성전자주식회사 | 광자 굴절용 마이크로 렌즈를 구비하는 단위화소, 상기 단위화소를 구비하는 백사이드 일루미네이션 cmos 이미지센서 및 상기 단위화소의 형성방법 |
US8497536B2 (en) * | 2011-09-16 | 2013-07-30 | Omnivision Technologies, Inc. | Dual-facing camera assembly |
-
2012
- 2012-05-25 US US13/481,589 patent/US8716823B2/en active Active
- 2012-07-13 JP JP2012157141A patent/JP5766663B2/ja active Active
- 2012-07-19 KR KR1020120078754A patent/KR101458271B1/ko active IP Right Grant
- 2012-07-24 WO PCT/US2012/047936 patent/WO2013070288A1/en active Application Filing
- 2012-07-27 DE DE102012213280A patent/DE102012213280A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
DE102012213280A1 (de) | 2013-05-08 |
US8716823B2 (en) | 2014-05-06 |
US20130134535A1 (en) | 2013-05-30 |
KR101458271B1 (ko) | 2014-11-04 |
WO2013070288A1 (en) | 2013-05-16 |
KR20130050867A (ko) | 2013-05-16 |
JP2013102124A (ja) | 2013-05-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5766663B2 (ja) | シリコンマイクロレンズ及び金属反射材を有する裏面イメージセンサピクセル | |
US9437635B2 (en) | Solid-state image sensor, method of manufacturing the same and camera | |
US9749553B2 (en) | Imaging systems with stacked image sensors | |
US10593712B2 (en) | Image sensors with high dynamic range and infrared imaging toroidal pixels | |
JP5468133B2 (ja) | 固体撮像装置 | |
KR102600673B1 (ko) | 이미지 센서 | |
US8368157B2 (en) | Backside illumination image sensors with reflective light guides | |
US9030587B2 (en) | Solid-state image sensor with light-guiding portion | |
KR20170103624A (ko) | 고체 촬상 소자 및 그 제조 방법, 및 전자 기기 | |
US20180190692A1 (en) | Image sensor | |
KR20160051687A (ko) | 고체 촬상 소자 및 그 제조 방법, 및 전자 기기 | |
US10700113B2 (en) | Image sensors with diffractive lenses for stray light control | |
KR20100091891A (ko) | 고체 촬상 장치와 그 제조 방법, 및 전자 기기 | |
JP2012169530A (ja) | 固体撮像装置、および、その製造方法、電子機器 | |
US20120153418A1 (en) | Solid-state imaging device and manufacturing method thereof | |
TWI768582B (zh) | 積體晶片以及形成積體晶片的方法 | |
US9786702B2 (en) | Backside illuminated image sensors having buried light shields with absorptive antireflective coating | |
JP5504382B2 (ja) | 固体撮像素子及び撮像装置 | |
KR20240131965A (ko) | 반도체 장치 | |
JP2016225324A (ja) | 固体撮像装置 | |
JP2014022649A (ja) | 固体撮像素子、撮像装置、及び電子機器 | |
TWI734294B (zh) | 影像感測器 | |
US9721983B2 (en) | Semiconductor device and manufacturing method thereof | |
TWI776415B (zh) | 影像感測器及其形成方法 | |
KR20220084688A (ko) | 이미지 센서 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140220 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140225 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20140523 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140523 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140529 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20140625 Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140625 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150106 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20150423 Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150423 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150501 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150526 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150617 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5766663 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |