JP5766495B2 - 熱処理装置 - Google Patents

熱処理装置 Download PDF

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Publication number
JP5766495B2
JP5766495B2 JP2011089981A JP2011089981A JP5766495B2 JP 5766495 B2 JP5766495 B2 JP 5766495B2 JP 2011089981 A JP2011089981 A JP 2011089981A JP 2011089981 A JP2011089981 A JP 2011089981A JP 5766495 B2 JP5766495 B2 JP 5766495B2
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JP
Japan
Prior art keywords
electrode
heated
sample
heat treatment
gas
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Active
Application number
JP2011089981A
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English (en)
Japanese (ja)
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JP2012216737A (ja
JP2012216737A5 (enExample
Inventor
横川　賢悦
賢悦 横川
賢稔 三宅
賢稔 三宅
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2011089981A priority Critical patent/JP5766495B2/ja
Priority to US13/105,981 priority patent/US8809727B2/en
Publication of JP2012216737A publication Critical patent/JP2012216737A/ja
Publication of JP2012216737A5 publication Critical patent/JP2012216737A5/ja
Application granted granted Critical
Publication of JP5766495B2 publication Critical patent/JP5766495B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32036—AC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
JP2011089981A 2010-05-18 2011-04-14 熱処理装置 Active JP5766495B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011089981A JP5766495B2 (ja) 2010-05-18 2011-04-14 熱処理装置
US13/105,981 US8809727B2 (en) 2010-05-18 2011-05-12 Heat treatment apparatus

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2010113813 2010-05-18
JP2010113813 2010-05-18
JP2011079685 2011-03-31
JP2011079685 2011-03-31
JP2011089981A JP5766495B2 (ja) 2010-05-18 2011-04-14 熱処理装置

Publications (3)

Publication Number Publication Date
JP2012216737A JP2012216737A (ja) 2012-11-08
JP2012216737A5 JP2012216737A5 (enExample) 2014-05-22
JP5766495B2 true JP5766495B2 (ja) 2015-08-19

Family

ID=44971613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011089981A Active JP5766495B2 (ja) 2010-05-18 2011-04-14 熱処理装置

Country Status (2)

Country Link
US (1) US8809727B2 (enExample)
JP (1) JP5766495B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5730521B2 (ja) * 2010-09-08 2015-06-10 株式会社日立ハイテクノロジーズ 熱処理装置
TWM413957U (en) * 2010-10-27 2011-10-11 Tangteck Equipment Inc Diffusion furnace apparatus
US20130112669A1 (en) * 2011-11-08 2013-05-09 Takashi Uemura Heat treatment apparatus
KR20130107001A (ko) * 2012-03-21 2013-10-01 엘지이노텍 주식회사 증착 장치
JP2013222878A (ja) * 2012-04-18 2013-10-28 Hitachi High-Technologies Corp プラズマ熱処理方法および装置
NL2009466C2 (nl) * 2012-09-14 2014-03-18 Zwanenberg Food Group B V Inrichting voor het pasteuriseren van een massa voedingswaar.
KR20150046966A (ko) * 2013-10-23 2015-05-04 삼성디스플레이 주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
JP2015119005A (ja) * 2013-12-17 2015-06-25 三菱電機株式会社 成膜装置
WO2017149739A1 (ja) * 2016-03-03 2017-09-08 コアテクノロジー株式会社 プラズマ処理装置及びプラズマ処理用反応容器の構造
CN106513956B (zh) * 2016-12-12 2018-09-14 华南理工大学 SiC逆变式等离子切割电源

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01243530A (ja) * 1988-03-25 1989-09-28 Seiko Epson Corp 半導体装置の製造方法
US5013691A (en) * 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
JPH07231073A (ja) * 1994-02-17 1995-08-29 Canon Inc 半導体基板及びその製造方法
US5680013A (en) * 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
US5558718A (en) * 1994-04-08 1996-09-24 The Regents, University Of California Pulsed source ion implantation apparatus and method
US5615627A (en) * 1995-02-23 1997-04-01 Biocon, Incorporated Method and apparatus for destruction of waste by thermal scission and chemical recombination
JP2701775B2 (ja) * 1995-03-17 1998-01-21 日本電気株式会社 プラズマ処理装置
DE19615735A1 (de) * 1996-04-20 1997-10-23 Ruediger Haaga Gmbh Vorrichtung zum Sterilisieren der Innenflächen von druckempfindlichen Behältern
DE29805999U1 (de) * 1998-04-03 1998-06-25 Agrodyn Hochspannungstechnik GmbH, 33803 Steinhagen Vorrichtung zur Plasmabehandlung von Oberflächen
US6444083B1 (en) * 1999-06-30 2002-09-03 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof
US7274015B2 (en) * 2001-08-08 2007-09-25 Sionex Corporation Capacitive discharge plasma ion source
US6855906B2 (en) * 2001-10-16 2005-02-15 Adam Alexander Brailove Induction plasma reactor
JP3973872B2 (ja) * 2001-10-17 2007-09-12 住友大阪セメント株式会社 電極内蔵型サセプタ及びその製造方法
US7560657B2 (en) * 2002-05-08 2009-07-14 Btu International Inc. Plasma-assisted processing in a manufacturing line
DE10326135B4 (de) * 2002-06-12 2014-12-24 Ulvac, Inc. Entladungsplasma-Bearbeitungsanlage
US6825617B2 (en) * 2003-02-27 2004-11-30 Hitachi High-Technologies Corporation Semiconductor processing apparatus
KR20060125700A (ko) * 2004-02-06 2006-12-06 마츠시타 덴끼 산교 가부시키가이샤 탄화규소 반도체소자 및 그 제조방법
JP4704088B2 (ja) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置
US8157951B2 (en) * 2005-10-11 2012-04-17 Applied Materials, Inc. Capacitively coupled plasma reactor having very agile wafer temperature control
JP5069967B2 (ja) 2007-07-25 2012-11-07 株式会社日立国際電気 熱処理用部材の製造方法
JP5058084B2 (ja) * 2007-07-27 2012-10-24 株式会社半導体エネルギー研究所 光電変換装置の作製方法及びマイクロ波プラズマｃｖｄ装置
JP2010034481A (ja) 2008-07-31 2010-02-12 Sumitomo Electric Ind Ltd 半導体装置の製造方法および半導体装置

Also Published As

Publication number Publication date
JP2012216737A (ja) 2012-11-08
US8809727B2 (en) 2014-08-19
US20110284506A1 (en) 2011-11-24

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