JP5754129B2 - 圧電素子、圧電センサー、電子機器、および圧電素子の製造方法 - Google Patents

圧電素子、圧電センサー、電子機器、および圧電素子の製造方法 Download PDF

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Publication number
JP5754129B2
JP5754129B2 JP2010284662A JP2010284662A JP5754129B2 JP 5754129 B2 JP5754129 B2 JP 5754129B2 JP 2010284662 A JP2010284662 A JP 2010284662A JP 2010284662 A JP2010284662 A JP 2010284662A JP 5754129 B2 JP5754129 B2 JP 5754129B2
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Japan
Prior art keywords
lower electrode
layer
piezoelectric
piezoelectric layer
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Expired - Fee Related
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JP2010284662A
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English (en)
Japanese (ja)
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JP2011211164A (ja
JP2011211164A5 (enExample
Inventor
洋史 松田
洋史 松田
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Seiko Epson Corp
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Seiko Epson Corp
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Publication date
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Priority to JP2010284662A priority Critical patent/JP5754129B2/ja
Priority to US13/042,729 priority patent/US8604668B2/en
Priority to CN201110059649.7A priority patent/CN102194991B/zh
Publication of JP2011211164A publication Critical patent/JP2011211164A/ja
Priority to US14/072,913 priority patent/US9356227B2/en
Publication of JP2011211164A5 publication Critical patent/JP2011211164A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
JP2010284662A 2010-03-11 2010-12-21 圧電素子、圧電センサー、電子機器、および圧電素子の製造方法 Expired - Fee Related JP5754129B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010284662A JP5754129B2 (ja) 2010-03-11 2010-12-21 圧電素子、圧電センサー、電子機器、および圧電素子の製造方法
US13/042,729 US8604668B2 (en) 2010-03-11 2011-03-08 Piezoelectric element, piezoelectric sensor, electronic device, and method for manufacturing piezoelectric element
CN201110059649.7A CN102194991B (zh) 2010-03-11 2011-03-11 压电元件、压电传感器、电子设备及压电元件的制造方法
US14/072,913 US9356227B2 (en) 2010-03-11 2013-11-06 Method for manufacturing a piezoelectric element

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010054168 2010-03-11
JP2010054168 2010-03-11
JP2010284662A JP5754129B2 (ja) 2010-03-11 2010-12-21 圧電素子、圧電センサー、電子機器、および圧電素子の製造方法

Related Child Applications (1)

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JP2015108973A Division JP6056905B2 (ja) 2010-03-11 2015-05-28 圧電素子、圧電センサー、および電子機器

Publications (3)

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JP2011211164A JP2011211164A (ja) 2011-10-20
JP2011211164A5 JP2011211164A5 (enExample) 2014-02-13
JP5754129B2 true JP5754129B2 (ja) 2015-07-29

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JP2010284662A Expired - Fee Related JP5754129B2 (ja) 2010-03-11 2010-12-21 圧電素子、圧電センサー、電子機器、および圧電素子の製造方法

Country Status (3)

Country Link
US (2) US8604668B2 (enExample)
JP (1) JP5754129B2 (enExample)
CN (1) CN102194991B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5754145B2 (ja) 2011-01-25 2015-07-29 セイコーエプソン株式会社 超音波センサーおよび電子機器
JP5834657B2 (ja) 2011-09-12 2015-12-24 セイコーエプソン株式会社 超音波プローブおよび超音波画像診断装置
JP5990929B2 (ja) 2012-02-24 2016-09-14 セイコーエプソン株式会社 超音波トランスデューサー装置およびプローブ並びに電子機器および超音波診断装置
JP5970704B2 (ja) 2012-05-30 2016-08-17 セイコーエプソン株式会社 駆動装置、超音波プローブ及び超音波診断装置
CN103779272B (zh) * 2013-01-11 2017-06-20 北京纳米能源与系统研究所 晶体管阵列及其制备方法
JP6136464B2 (ja) * 2013-03-29 2017-05-31 セイコーエプソン株式会社 超音波トランスデューサー装置およびプローブ並びに電子機器および超音波画像装置
US9755139B2 (en) * 2014-06-30 2017-09-05 Texas Instruments Incorporated Piezoeletric wet etch process with reduced resist lifting and controlled undercut
JP6314777B2 (ja) 2014-09-30 2018-04-25 セイコーエプソン株式会社 超音波センサー並びにプローブおよび電子機器
JP6862820B2 (ja) * 2016-12-26 2021-04-21 セイコーエプソン株式会社 超音波デバイス及び超音波装置
JP6365726B2 (ja) * 2017-04-28 2018-08-01 セイコーエプソン株式会社 超音波トランスデューサー装置及び電子機器
WO2020129296A1 (ja) * 2018-12-19 2020-06-25 株式会社村田製作所 圧電トランスデューサ
CN113412579B (zh) * 2019-02-12 2024-08-27 株式会社村田制作所 压电装置
CN114966329B (zh) * 2022-02-16 2025-08-12 湖北工业大学 局部放电绝缘缺陷一体化检测传感器
CN116921193B (zh) * 2023-07-14 2025-11-18 深圳市科曼医疗设备有限公司 超声换能器阵元及具有该阵元的超声换能器

Family Cites Families (17)

* Cited by examiner, † Cited by third party
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JP3318687B2 (ja) * 1993-06-08 2002-08-26 日本碍子株式会社 圧電／電歪膜型素子及びその製造方法
JP3323343B2 (ja) * 1994-04-01 2002-09-09 日本碍子株式会社 センサ素子及び粒子センサ
KR100540644B1 (ko) * 1998-02-19 2006-02-28 삼성전자주식회사 마이크로 엑츄에이터 제조방법
DE10149542A1 (de) * 2001-10-08 2003-04-17 Infineon Technologies Ag BAW-Resonator
JP4305016B2 (ja) * 2002-03-18 2009-07-29 セイコーエプソン株式会社 圧電アクチュエータユニット、及び、それを用いた液体噴射ヘッド
JP2003284182A (ja) * 2002-03-25 2003-10-03 Osaka Industrial Promotion Organization 超音波センサ素子と超音波アレイセンサ装置とそれらの共振周波数の調整方法
TW540173B (en) * 2002-05-03 2003-07-01 Asia Pacific Microsystems Inc Bulk acoustic device having integrated fine-tuning and trimming devices
US7242130B2 (en) * 2003-11-07 2007-07-10 Matsushita Electric Industrial Co., Ltd. Piezoelectric device, antenna duplexer, and method of manufacturing piezoelectric resonators used therefor
KR100631216B1 (ko) * 2004-05-17 2006-10-04 삼성전자주식회사 에어갭형 박막벌크음향공진기 및 그 제조방법
JP4744849B2 (ja) * 2004-11-11 2011-08-10 株式会社東芝 半導体装置
KR100666693B1 (ko) * 2004-11-23 2007-01-11 삼성전자주식회사 모놀리식 듀플렉서
JP4622574B2 (ja) 2005-02-21 2011-02-02 株式会社デンソー 超音波素子
JP2007037006A (ja) * 2005-07-29 2007-02-08 Osaka Prefecture 超音波センサ及びその製造方法
EP2037251A4 (en) * 2006-07-04 2012-10-24 Ngk Insulators Ltd PIEZOELECTRIC / ELECTROSTRICTIVE FILM-TYPE SENSOR
JP5417835B2 (ja) 2008-12-17 2014-02-19 セイコーエプソン株式会社 超音波センサー及び超音波センサーの製造方法
JP2010214634A (ja) * 2009-03-13 2010-09-30 Ricoh Co Ltd 薄膜アクチュエータ、液体吐出ヘッド、インクカートリッジ及び画像形成装置
US8508315B2 (en) * 2010-02-23 2013-08-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustically coupled resonator filter with impedance transformation ratio controlled by resonant frequency difference between two coupled resonators

Also Published As

Publication number Publication date
US8604668B2 (en) 2013-12-10
US20110221306A1 (en) 2011-09-15
JP2011211164A (ja) 2011-10-20
US9356227B2 (en) 2016-05-31
CN102194991B (zh) 2015-01-07
US20140059821A1 (en) 2014-03-06
CN102194991A (zh) 2011-09-21

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