JP5744463B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP5744463B2
JP5744463B2 JP2010231533A JP2010231533A JP5744463B2 JP 5744463 B2 JP5744463 B2 JP 5744463B2 JP 2010231533 A JP2010231533 A JP 2010231533A JP 2010231533 A JP2010231533 A JP 2010231533A JP 5744463 B2 JP5744463 B2 JP 5744463B2
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JP
Japan
Prior art keywords
current
photoelectric conversion
emitter
bipolar transistor
conversion element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010231533A
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English (en)
Japanese (ja)
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JP2012084790A (ja
JP2012084790A5 (cg-RX-API-DMAC7.html
Inventor
享裕 黒田
享裕 黒田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2010231533A priority Critical patent/JP5744463B2/ja
Priority to US13/249,764 priority patent/US8704147B2/en
Priority to CN201110310637.7A priority patent/CN102572310B/zh
Publication of JP2012084790A publication Critical patent/JP2012084790A/ja
Publication of JP2012084790A5 publication Critical patent/JP2012084790A5/ja
Application granted granted Critical
Publication of JP5744463B2 publication Critical patent/JP5744463B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
JP2010231533A 2010-10-14 2010-10-14 光電変換装置 Expired - Fee Related JP5744463B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010231533A JP5744463B2 (ja) 2010-10-14 2010-10-14 光電変換装置
US13/249,764 US8704147B2 (en) 2010-10-14 2011-09-30 Photoelectric conversion device
CN201110310637.7A CN102572310B (zh) 2010-10-14 2011-10-14 光电转换器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010231533A JP5744463B2 (ja) 2010-10-14 2010-10-14 光電変換装置

Publications (3)

Publication Number Publication Date
JP2012084790A JP2012084790A (ja) 2012-04-26
JP2012084790A5 JP2012084790A5 (cg-RX-API-DMAC7.html) 2013-10-17
JP5744463B2 true JP5744463B2 (ja) 2015-07-08

Family

ID=45933317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010231533A Expired - Fee Related JP5744463B2 (ja) 2010-10-14 2010-10-14 光電変換装置

Country Status (3)

Country Link
US (1) US8704147B2 (cg-RX-API-DMAC7.html)
JP (1) JP5744463B2 (cg-RX-API-DMAC7.html)
CN (1) CN102572310B (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5744463B2 (ja) * 2010-10-14 2015-07-08 キヤノン株式会社 光電変換装置
JP7173660B2 (ja) * 2018-09-03 2022-11-16 日清紡マイクロデバイス株式会社 光センサ回路
CN116075797B (zh) * 2020-12-03 2025-04-11 美国亚德诺半导体公司 对数电流-电压转换器

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4065668A (en) * 1976-07-22 1977-12-27 National Semiconductor Corporation Photodiode operational amplifier
US4502018A (en) * 1982-03-04 1985-02-26 International Standard Electric Corporation Gain regulation circuit for an amplifier circuit
JPS5927569A (ja) * 1982-08-06 1984-02-14 Hitachi Ltd 半導体スイツチ素子
JPS6482815A (en) * 1987-09-25 1989-03-28 Sharp Kk Photocoupler circuit
US4973833A (en) * 1988-09-28 1990-11-27 Minolta Camera Kabushiki Kaisha Image sensor including logarithmic converters
JPH0664280B2 (ja) * 1989-04-19 1994-08-22 オリンパス光学工業株式会社 カメラの露出制御装置
NL8902422A (nl) * 1989-09-29 1991-04-16 Philips Nv Meetinrichting.
JPH03270251A (ja) * 1990-03-20 1991-12-02 Fujitsu Ltd 半導体集積回路装置
JPH04123521A (ja) * 1990-09-13 1992-04-23 Sharp Corp 光結合ロジックデバイス
US5164682A (en) * 1991-07-24 1992-11-17 Taralp Guener Two-port wideband bipolar transistor amplifiers
DE4431117C2 (de) * 1994-09-01 1997-09-25 Gerd Reime Schaltung zum Einstellen des Arbeitspunktes einer Photodiode
JP3315651B2 (ja) 1998-08-31 2002-08-19 キヤノン株式会社 光センサと固体撮像装置
JP2001215550A (ja) * 2000-02-01 2001-08-10 Canon Inc 光電変換装置、調光回路およびcmosセンサ
US6677570B1 (en) * 2000-09-22 2004-01-13 Nortel Networks Limited Wide dynamic range optical power detector
JP4086514B2 (ja) * 2002-02-13 2008-05-14 キヤノン株式会社 光電変換装置及び撮像装置
JP2004006694A (ja) * 2002-03-29 2004-01-08 Toshiba Corp 受光素子及び光半導体装置
US6731488B2 (en) * 2002-04-01 2004-05-04 International Business Machines Corporation Dual emitter transistor with ESD protection
JP3959381B2 (ja) * 2003-09-04 2007-08-15 株式会社東芝 半導体光センサ、及び、携帯端末
JP4290066B2 (ja) 2004-05-20 2009-07-01 キヤノン株式会社 固体撮像装置および撮像システム
US7214922B2 (en) * 2004-09-17 2007-05-08 Kabushiki Kaisha Toshiba Semiconductor photosensor device and information apparatus with sensitivity region for wide dynamic range
JP2006332226A (ja) * 2005-05-25 2006-12-07 Toshiba Corp 半導体光センサ装置
JP2007251234A (ja) * 2006-03-13 2007-09-27 Canon Inc 定数倍電流増幅回路
JP4815282B2 (ja) * 2006-06-27 2011-11-16 シリンクス株式会社 光電変換装置
JP5584982B2 (ja) 2009-02-09 2014-09-10 ソニー株式会社 固体撮像素子およびカメラシステム
US7592869B2 (en) * 2007-09-17 2009-09-22 Finisar Corporation Variable gain amplifier having dual gain control
JP5221982B2 (ja) 2008-02-29 2013-06-26 キヤノン株式会社 固体撮像装置及びカメラ
US8106346B2 (en) * 2008-09-04 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Photodetector
US8913166B2 (en) 2009-01-21 2014-12-16 Canon Kabushiki Kaisha Solid-state imaging apparatus
US8174318B2 (en) * 2010-01-28 2012-05-08 Analog Devices, Inc. Apparatus and method for providing linear transconductance amplification
JP5744463B2 (ja) * 2010-10-14 2015-07-08 キヤノン株式会社 光電変換装置
JP2012147183A (ja) * 2011-01-11 2012-08-02 Canon Inc 光電変換装置
JP6045136B2 (ja) * 2011-01-31 2016-12-14 キヤノン株式会社 光電変換装置

Also Published As

Publication number Publication date
JP2012084790A (ja) 2012-04-26
US20120091322A1 (en) 2012-04-19
US8704147B2 (en) 2014-04-22
CN102572310B (zh) 2015-02-25
CN102572310A (zh) 2012-07-11

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