JP2012084790A5 - - Google Patents

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Publication number
JP2012084790A5
JP2012084790A5 JP2010231533A JP2010231533A JP2012084790A5 JP 2012084790 A5 JP2012084790 A5 JP 2012084790A5 JP 2010231533 A JP2010231533 A JP 2010231533A JP 2010231533 A JP2010231533 A JP 2010231533A JP 2012084790 A5 JP2012084790 A5 JP 2012084790A5
Authority
JP
Japan
Prior art keywords
current
emitter
bipolar transistor
amplifying
amplification
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010231533A
Other languages
English (en)
Japanese (ja)
Other versions
JP5744463B2 (ja
JP2012084790A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010231533A priority Critical patent/JP5744463B2/ja
Priority claimed from JP2010231533A external-priority patent/JP5744463B2/ja
Priority to US13/249,764 priority patent/US8704147B2/en
Priority to CN201110310637.7A priority patent/CN102572310B/zh
Publication of JP2012084790A publication Critical patent/JP2012084790A/ja
Publication of JP2012084790A5 publication Critical patent/JP2012084790A5/ja
Application granted granted Critical
Publication of JP5744463B2 publication Critical patent/JP5744463B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010231533A 2010-10-14 2010-10-14 光電変換装置 Expired - Fee Related JP5744463B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010231533A JP5744463B2 (ja) 2010-10-14 2010-10-14 光電変換装置
US13/249,764 US8704147B2 (en) 2010-10-14 2011-09-30 Photoelectric conversion device
CN201110310637.7A CN102572310B (zh) 2010-10-14 2011-10-14 光电转换器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010231533A JP5744463B2 (ja) 2010-10-14 2010-10-14 光電変換装置

Publications (3)

Publication Number Publication Date
JP2012084790A JP2012084790A (ja) 2012-04-26
JP2012084790A5 true JP2012084790A5 (cg-RX-API-DMAC7.html) 2013-10-17
JP5744463B2 JP5744463B2 (ja) 2015-07-08

Family

ID=45933317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010231533A Expired - Fee Related JP5744463B2 (ja) 2010-10-14 2010-10-14 光電変換装置

Country Status (3)

Country Link
US (1) US8704147B2 (cg-RX-API-DMAC7.html)
JP (1) JP5744463B2 (cg-RX-API-DMAC7.html)
CN (1) CN102572310B (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5744463B2 (ja) * 2010-10-14 2015-07-08 キヤノン株式会社 光電変換装置
JP7173660B2 (ja) * 2018-09-03 2022-11-16 日清紡マイクロデバイス株式会社 光センサ回路
CN116075797B (zh) * 2020-12-03 2025-04-11 美国亚德诺半导体公司 对数电流-电压转换器

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JPS5927569A (ja) * 1982-08-06 1984-02-14 Hitachi Ltd 半導体スイツチ素子
JPS6482815A (en) * 1987-09-25 1989-03-28 Sharp Kk Photocoupler circuit
US4973833A (en) * 1988-09-28 1990-11-27 Minolta Camera Kabushiki Kaisha Image sensor including logarithmic converters
JPH0664280B2 (ja) * 1989-04-19 1994-08-22 オリンパス光学工業株式会社 カメラの露出制御装置
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US5164682A (en) * 1991-07-24 1992-11-17 Taralp Guener Two-port wideband bipolar transistor amplifiers
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JP3315651B2 (ja) 1998-08-31 2002-08-19 キヤノン株式会社 光センサと固体撮像装置
JP2001215550A (ja) * 2000-02-01 2001-08-10 Canon Inc 光電変換装置、調光回路およびcmosセンサ
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JP2004006694A (ja) * 2002-03-29 2004-01-08 Toshiba Corp 受光素子及び光半導体装置
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US8174318B2 (en) * 2010-01-28 2012-05-08 Analog Devices, Inc. Apparatus and method for providing linear transconductance amplification
JP5744463B2 (ja) * 2010-10-14 2015-07-08 キヤノン株式会社 光電変換装置
JP2012147183A (ja) * 2011-01-11 2012-08-02 Canon Inc 光電変換装置
JP6045136B2 (ja) * 2011-01-31 2016-12-14 キヤノン株式会社 光電変換装置

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