JP5723862B2 - 歪みを減少させるためのテンプレート上に成長させたiii族窒化物光放出デバイス - Google Patents
歪みを減少させるためのテンプレート上に成長させたiii族窒化物光放出デバイス Download PDFInfo
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- 230000009467 reduction Effects 0.000 title description 2
- 239000000203 mixture Substances 0.000 claims description 100
- 239000013078 crystal Substances 0.000 claims description 57
- 229910052738 indium Inorganic materials 0.000 claims description 45
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 18
- 150000004767 nitrides Chemical group 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 648
- 239000000758 substrate Substances 0.000 description 38
- 230000006911 nucleation Effects 0.000 description 36
- 238000010899 nucleation Methods 0.000 description 36
- 230000007547 defect Effects 0.000 description 17
- 238000000034 method Methods 0.000 description 17
- 238000000137 annealing Methods 0.000 description 15
- 229910052594 sapphire Inorganic materials 0.000 description 14
- 239000010980 sapphire Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 10
- 239000010432 diamond Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
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- 230000000875 corresponding effect Effects 0.000 description 6
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- 238000001330 spinodal decomposition reaction Methods 0.000 description 6
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
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- 238000013459 approach Methods 0.000 description 5
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- 239000002243 precursor Substances 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
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- 229910003460 diamond Inorganic materials 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 229910003465 moissanite Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
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- 235000012431 wafers Nutrition 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
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- 239000000126 substance Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
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- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
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- 230000008018 melting Effects 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003121 nonmonotonic effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- 238000005382 thermal cycling Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Description
歪み=ε=(a面内−abulk)/abulk (1)
歪み=│ε│=│(a面内−abulk)│/abulk (2)
a面内=3.1832+9.578×10-13*TDD (3)
次に、本発明の好ましい態様を示す。
1 デバイスであって、
第1の層と、
前記第1の層の上に成長する第2の層と、
前記第2の層の上に成長するデバイス層と、
を含有するIII族窒化物構造を含み、
前記第1の層は実質的にインジウムを含有せず、前記第2の層はインジウムを含有する非単一結晶層であり、前記デバイス層はn型領域とP型領域との間に配置されるIII族窒化物光放出層を含むデバイス。
2 上記1に記載のデバイスにおいて、
前記第1の層はGaNでありおよび前記第2の層はInGaNであるデバイス。
3 上記1に記載のデバイスにおいて、
前記III族窒化物構造はさらに前記第1の層と前記第2の層との間に配置される第3の層を含み、前記第3の層は実質的にインジウムを含有しない非単一結晶層であるデバイス。
4 上記1に記載のデバイスにおいて、
前記III族窒化物構造は前記第2の層と前記光放出層との間に配置されるさらに第3の層をさらに含み、前記第3の層はインジウムを含有する非単一結晶層であるデバイス。
5 上記4に記載のデバイスにおいて、
前記第2の層は前記第3の層とは異なるインジウム組成を有するデバイス。
6 上記1に記載のデバイスにおいて、
さらに、前記光放出層と前記第1の層との間に配置される傾斜組成を有する層を含むデバイス。
7 上記1に記載のデバイスにおいて、
前記光放出層は前記光放出層と同一組成の自立材料の格子定数に対応するバルクの格子定数a bulk を有し、
前記光放出層は前記構造中で成長する前記光放出層の格子定数に対応する面内格子定数a 面内 を有し、
前記光放出層中の|(a 面内 −a bulk )|/a bulk は1%未満であるデバイス。
8 上記1に記載のデバイスにおいて、
前記光放出層は3.189オングストロームよりも大きいa−格子定数を有するデバイス。
9 デバイスであって、
第1の実質的単一結晶層と、
第2の実質的単一結晶層と、
前記第1の実質的単一結晶層と前記第2の実質的単一結晶層との間に配置されるインジウムを含有する非単一結晶層とを含有するIII族窒化物構造を含むデバイス。
10 上記9に記載のデバイスにおいて、前記III族窒化物構造はさらにn型領域とP型領域との間に配置された光放出層を含み、前記第2の実質的単一結晶層は前記光放出領域と前記非単一結晶層との間に配置されるデバイス。
11 上記10に記載のデバイスにおいて、前記第1の実質的単一結晶層の組成は前記第2の実質的単一結晶層の組成とは異なるデバイス。
12 上記10に記載のデバイスにおいて、前記第1の実質的単一結晶層はGaNまたはInGaNであり、前記第2の実質的単一結晶層はInGaNであり、前記第2の実質的単一結晶層は前記第1の実質的単一結晶層よりも大きいInN組成を有するデバイス。
13 上記10に記載のデバイスにおいて、前記第2の実質的単一結晶層は前記第1の実質的単一結晶層よりも大きい面内a−格子定数を有するデバイス。
14 上記10に記載のデバイスにおいて、前記非単一結晶層はInGaNであるデバイス。
15 上記10に記載のデバイスにおいて、さらに、前記第1の実質的単一結晶層と前記非単一結晶層の間に配置された第3の実質的単一結晶層を含むデバイス。
16 上記10に記載のデバイスにおいて、さらに、インジウムを含有する前記非単一結晶層と前記光放出層との間に配置される第3の実質的単一結晶層を含むデバイス。
17 上記10に記載のデバイスにおいて、
前記光放出層は前記光放出層と同一組成の自立材料の格子定数に対応するバルクの格子定数a bulk を有し、
前記光放出層は前記構造中で成長する前記光放出層の格子定数に対応する面内格子定数a 面内 を有し、
前記光放出層中の|(a 面内 ―a bulk )|/a bulk は1%未満であるデバイス。
18 上記10に記載のデバイスにおいて、
前記光放出層は3.189オングストロームよりも大きいa−格子定数を有するデバイス。
19 デバイスであって、n型領域とP型領域との間に配置された光放出層を含むIII族窒化物構造を含有し、前記光放出層中の貫通転位密度は3×10 9 cm -2 未満であり、前記光放出層中のa−格子定数は3.200Åよりも大きいデバイス。
Claims (10)
- デバイスであって、
第1の実質的単一結晶層と、
第2の実質的単一結晶層と、
前記第2の実質的単一結晶層の上に成長するデバイス層と、
前記第1の実質的単一結晶層と前記第2の実質的単一結晶層との間に配置され、かつ、前記第2の実質的単一結晶層と接している第3の実質的単一結晶層と、
前記第1の実質的単一結晶層と前記第3の実質的単一結晶層との間に配置され、かつ、前記第3の実質的単一結晶層と接しているインジウムを含有する非単一結晶層とを含有するIII族窒化物構造を含むデバイス。 - 請求項1に記載のデバイスにおいて、前記III族窒化物構造はさらにn型領域とP型領域との間に配置された光放出層を含み、前記第2の実質的単一結晶層は前記光放出層と前記非単一結晶層との間に配置されるデバイス。
- 請求項2に記載のデバイスにおいて、前記第1の実質的単一結晶層の組成は前記第2の実質的単一結晶層の組成とは異なるデバイス。
- 請求項1に記載のデバイスにおいて、前記第1の実質的単一結晶層はGaNまたはInGaNであり、前記第2の実質的単一結晶層はInGaNであり、前記第2の実質的単一結晶層は前記第1の実質的単一結晶層よりも大きいInN組成を有するデバイス。
- 請求項1に記載のデバイスにおいて、前記第2の実質的単一結晶層は前記第1の実質的単一結晶層よりも大きい面内a−格子定数を有するデバイス。
- 請求項2に記載のデバイスにおいて、前記非単一結晶層はInGaNであるデバイス。
- 請求項2に記載のデバイスにおいて、第3の実質的単一結晶層はインジウムを含有する前記非単一結晶層と前記光放出層との間に配置されるデバイス。
- 請求項2に記載のデバイスにおいて、
前記光放出層は前記光放出層と同一組成の自立材料の格子定数に対応するバルクの格子定数abulkを有し、
前記光放出層は前記構造中で成長する前記光放出層の格子定数に対応する面内格子定数a面内を有し、
前記光放出層中の|(a面内―abulk)|/abulkは1%未満であるデバイス。 - 請求項2に記載のデバイスにおいて、
前記光放出層は3.189オングストロームよりも大きいa−格子定数を有するデバイス。 - 請求項1に記載のデバイスにおいて、n型領域とP型領域との間に配置された光放出層を含むIII族窒化物構造を含有し、前記光放出層中の貫通転位密度は3×109cm-2未満であり、前記光放出層中のa−格子定数は3.200Åよりも大きいデバイス。
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US11/615,834 US7547908B2 (en) | 2006-12-22 | 2006-12-22 | III-nitride light emitting devices grown on templates to reduce strain |
US11/615,834 | 2006-12-22 |
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KR (2) | KR101584465B1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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US8674405B1 (en) * | 2005-04-13 | 2014-03-18 | Element Six Technologies Us Corporation | Gallium—nitride-on-diamond wafers and devices, and methods of manufacture |
EP1883141B1 (de) * | 2006-07-27 | 2017-05-24 | OSRAM Opto Semiconductors GmbH | LD oder LED mit Übergitter-Mantelschicht |
US20080303033A1 (en) * | 2007-06-05 | 2008-12-11 | Cree, Inc. | Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates |
US8664747B2 (en) * | 2008-04-28 | 2014-03-04 | Toshiba Techno Center Inc. | Trenched substrate for crystal growth and wafer bonding |
US8354687B1 (en) * | 2008-07-30 | 2013-01-15 | Nitek, Inc. | Efficient thermal management and packaging for group III nitride based UV devices |
US9117944B2 (en) * | 2008-09-24 | 2015-08-25 | Koninklijke Philips N.V. | Semiconductor light emitting devices grown on composite substrates |
CN101971364B (zh) | 2008-11-06 | 2013-05-15 | 松下电器产业株式会社 | 氮化物类半导体元件及其制造方法 |
US8227791B2 (en) * | 2009-01-23 | 2012-07-24 | Invenlux Limited | Strain balanced light emitting devices |
JP5291499B2 (ja) * | 2009-03-10 | 2013-09-18 | 株式会社沖データ | 半導体複合装置の製造方法 |
US8058639B2 (en) * | 2009-04-06 | 2011-11-15 | Panasonic Corporation | Nitride semiconductor element and method for production thereof |
US8207547B2 (en) | 2009-06-10 | 2012-06-26 | Brudgelux, Inc. | Thin-film LED with P and N contacts electrically isolated from the substrate |
TWI405409B (zh) * | 2009-08-27 | 2013-08-11 | Novatek Microelectronics Corp | 低電壓差動訊號輸出級 |
US8525221B2 (en) | 2009-11-25 | 2013-09-03 | Toshiba Techno Center, Inc. | LED with improved injection efficiency |
US8586963B2 (en) * | 2009-12-08 | 2013-11-19 | Lehigh University | Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same |
WO2011077704A1 (ja) * | 2009-12-25 | 2011-06-30 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
CN102136536A (zh) | 2010-01-25 | 2011-07-27 | 亚威朗(美国) | 应变平衡发光器件 |
US8692261B2 (en) * | 2010-05-19 | 2014-04-08 | Koninklijke Philips N.V. | Light emitting device grown on a relaxed layer |
US8536022B2 (en) * | 2010-05-19 | 2013-09-17 | Koninklijke Philips N.V. | Method of growing composite substrate using a relaxed strained layer |
US8395165B2 (en) | 2011-07-08 | 2013-03-12 | Bridelux, Inc. | Laterally contacted blue LED with superlattice current spreading layer |
US20130026480A1 (en) | 2011-07-25 | 2013-01-31 | Bridgelux, Inc. | Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow |
US8916906B2 (en) | 2011-07-29 | 2014-12-23 | Kabushiki Kaisha Toshiba | Boron-containing buffer layer for growing gallium nitride on silicon |
US9142743B2 (en) | 2011-08-02 | 2015-09-22 | Kabushiki Kaisha Toshiba | High temperature gold-free wafer bonding for light emitting diodes |
US9012939B2 (en) | 2011-08-02 | 2015-04-21 | Kabushiki Kaisha Toshiba | N-type gallium-nitride layer having multiple conductive intervening layers |
US9343641B2 (en) | 2011-08-02 | 2016-05-17 | Manutius Ip, Inc. | Non-reactive barrier metal for eutectic bonding process |
US8865565B2 (en) | 2011-08-02 | 2014-10-21 | Kabushiki Kaisha Toshiba | LED having a low defect N-type layer that has grown on a silicon substrate |
US20130032810A1 (en) | 2011-08-03 | 2013-02-07 | Bridgelux, Inc. | Led on silicon substrate using zinc-sulfide as buffer layer |
US8564010B2 (en) | 2011-08-04 | 2013-10-22 | Toshiba Techno Center Inc. | Distributed current blocking structures for light emitting diodes |
US8624482B2 (en) | 2011-09-01 | 2014-01-07 | Toshiba Techno Center Inc. | Distributed bragg reflector for reflecting light of multiple wavelengths from an LED |
US9117941B2 (en) * | 2011-09-02 | 2015-08-25 | King Dragon International Inc. | LED package and method of the same |
US20150001570A1 (en) * | 2011-09-02 | 2015-01-01 | King Dragon International Inc. | LED Package and Method of the Same |
US8669585B1 (en) | 2011-09-03 | 2014-03-11 | Toshiba Techno Center Inc. | LED that has bounding silicon-doped regions on either side of a strain release layer |
US8558247B2 (en) | 2011-09-06 | 2013-10-15 | Toshiba Techno Center Inc. | GaN LEDs with improved area and method for making the same |
US8686430B2 (en) | 2011-09-07 | 2014-04-01 | Toshiba Techno Center Inc. | Buffer layer for GaN-on-Si LED |
US8664679B2 (en) | 2011-09-29 | 2014-03-04 | Toshiba Techno Center Inc. | Light emitting devices having light coupling layers with recessed electrodes |
US9012921B2 (en) | 2011-09-29 | 2015-04-21 | Kabushiki Kaisha Toshiba | Light emitting devices having light coupling layers |
US8853668B2 (en) | 2011-09-29 | 2014-10-07 | Kabushiki Kaisha Toshiba | Light emitting regions for use with light emitting devices |
US8698163B2 (en) | 2011-09-29 | 2014-04-15 | Toshiba Techno Center Inc. | P-type doping layers for use with light emitting devices |
US9178114B2 (en) | 2011-09-29 | 2015-11-03 | Manutius Ip, Inc. | P-type doping layers for use with light emitting devices |
US20130082274A1 (en) | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
US8581267B2 (en) | 2011-11-09 | 2013-11-12 | Toshiba Techno Center Inc. | Series connected segmented LED |
US8552465B2 (en) | 2011-11-09 | 2013-10-08 | Toshiba Techno Center Inc. | Method for reducing stress in epitaxial growth |
US9184344B2 (en) | 2012-01-25 | 2015-11-10 | Invenlux Limited | Lighting-emitting device with nanostructured layer and method for fabricating the same |
RU2615215C2 (ru) * | 2012-02-28 | 2017-04-04 | Конинклейке Филипс Н.В. | Интеграция светодиодов на нитриде галлия с приборами на нитриде алюминия-галлия/нитриде галлия на кремниевых подложках для светодиодов переменного тока |
JP5931653B2 (ja) * | 2012-09-03 | 2016-06-08 | シャープ株式会社 | 光電変換素子 |
CN102867893A (zh) * | 2012-09-17 | 2013-01-09 | 聚灿光电科技(苏州)有限公司 | 一种提高GaN衬底使用效率的方法 |
JP6426976B2 (ja) * | 2014-10-24 | 2018-11-21 | 日本特殊陶業株式会社 | 粒子検知システム |
CN108039397B (zh) * | 2017-11-27 | 2019-11-12 | 厦门市三安光电科技有限公司 | 一种氮化物半导体发光二极管 |
US11011377B2 (en) | 2019-04-04 | 2021-05-18 | International Business Machines Corporation | Method for fabricating a semiconductor device |
US11164844B2 (en) * | 2019-09-12 | 2021-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Double etch stop layer to protect semiconductor device layers from wet chemical etch |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1039247C (zh) * | 1994-09-10 | 1998-07-22 | 冶金工业部钢铁研究总院 | 一种涂有二硼化钛涂层的坩埚及其制造方法 |
DE69637304T2 (de) * | 1995-03-17 | 2008-08-07 | Toyoda Gosei Co., Ltd. | Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung |
JPH08293473A (ja) | 1995-04-25 | 1996-11-05 | Sumitomo Electric Ind Ltd | エピタキシャルウェハおよび化合物半導体発光素子ならびにそれらの製造方法 |
JP2839077B2 (ja) | 1995-06-15 | 1998-12-16 | 日本電気株式会社 | 窒化ガリウム系化合物半導体発光素子 |
JP3771952B2 (ja) * | 1995-06-28 | 2006-05-10 | ソニー株式会社 | 単結晶iii−v族化合物半導体層の成長方法、発光素子の製造方法およびトランジスタの製造方法 |
JP2006344992A (ja) * | 1995-11-27 | 2006-12-21 | Sumitomo Chemical Co Ltd | 3−5族化合物半導体 |
JPH10173220A (ja) * | 1996-12-06 | 1998-06-26 | Rohm Co Ltd | 半導体発光素子の製法 |
US6266355B1 (en) | 1997-09-12 | 2001-07-24 | Sdl, Inc. | Group III-V nitride laser devices with cladding layers to suppress defects such as cracking |
JP4783483B2 (ja) * | 1997-11-07 | 2011-09-28 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 半導体基板および半導体基板の形成方法 |
JPH11243251A (ja) | 1998-02-26 | 1999-09-07 | Toshiba Corp | 半導体レーザ装置 |
SG75844A1 (en) | 1998-05-13 | 2000-10-24 | Univ Singapore | Crystal growth method for group-iii nitride and related compound semiconductors |
TW398084B (en) | 1998-06-05 | 2000-07-11 | Hewlett Packard Co | Multilayered indium-containing nitride buffer layer for nitride epitaxy |
US6265289B1 (en) | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
US6233265B1 (en) | 1998-07-31 | 2001-05-15 | Xerox Corporation | AlGaInN LED and laser diode structures for pure blue or green emission |
JP3505405B2 (ja) | 1998-10-22 | 2004-03-08 | 三洋電機株式会社 | 半導体素子及びその製造方法 |
US6319313B1 (en) * | 1999-03-15 | 2001-11-20 | Memc Electronic Materials, Inc. | Barium doping of molten silicon for use in crystal growing process |
JP2001093834A (ja) * | 1999-09-20 | 2001-04-06 | Sanyo Electric Co Ltd | 半導体素子および半導体ウエハならびにその製造方法 |
WO2001033643A1 (en) | 1999-10-29 | 2001-05-10 | Ohio University | BAND GAP ENGINEERING OF AMORPHOUS Al-Ga-N ALLOYS |
JP2001160627A (ja) | 1999-11-30 | 2001-06-12 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
US6599362B2 (en) | 2001-01-03 | 2003-07-29 | Sandia Corporation | Cantilever epitaxial process |
US6800876B2 (en) * | 2001-01-16 | 2004-10-05 | Cree, Inc. | Group III nitride LED with undoped cladding layer (5000.137) |
US6576932B2 (en) * | 2001-03-01 | 2003-06-10 | Lumileds Lighting, U.S., Llc | Increasing the brightness of III-nitride light emitting devices |
US6635904B2 (en) | 2001-03-29 | 2003-10-21 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
US6489636B1 (en) | 2001-03-29 | 2002-12-03 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
US6630692B2 (en) | 2001-05-29 | 2003-10-07 | Lumileds Lighting U.S., Llc | III-Nitride light emitting devices with low driving voltage |
US7692182B2 (en) * | 2001-05-30 | 2010-04-06 | Cree, Inc. | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
GB2378039B (en) | 2001-07-27 | 2003-09-17 | Juses Chao | AlInGaN LED Device |
JP3969989B2 (ja) * | 2001-10-10 | 2007-09-05 | 三洋電機株式会社 | 窒化物系半導体素子およびその製造方法 |
US6833564B2 (en) | 2001-11-02 | 2004-12-21 | Lumileds Lighting U.S., Llc | Indium gallium nitride separate confinement heterostructure light emitting devices |
JP2003289175A (ja) * | 2002-01-28 | 2003-10-10 | Sharp Corp | 半導体レーザ素子 |
JP2004247563A (ja) * | 2003-02-14 | 2004-09-02 | Sony Corp | 半導体素子 |
US6989555B2 (en) * | 2004-04-21 | 2006-01-24 | Lumileds Lighting U.S., Llc | Strain-controlled III-nitride light emitting device |
JP4206086B2 (ja) * | 2004-08-03 | 2009-01-07 | 住友電気工業株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子を製造する方法 |
RU2262155C1 (ru) * | 2004-09-14 | 2005-10-10 | Закрытое акционерное общество "Нитридные источники света" | Полупроводниковый элемент, излучающий свет в ультрафиолетовом диапазоне |
US7514707B2 (en) * | 2004-11-16 | 2009-04-07 | Showa Denko K.K. | Group III nitride semiconductor light-emitting device |
RU2277736C1 (ru) * | 2005-02-02 | 2006-06-10 | Закрытое акционерное общество "Нитридные источники света" | Полупроводниковый элемент, излучающий свет в синей области видимого спектра |
JP4468210B2 (ja) * | 2005-02-28 | 2010-05-26 | 株式会社東芝 | Lsiパッケージ用インターフェイスモジュール及びlsi実装体 |
US20070069225A1 (en) * | 2005-09-27 | 2007-03-29 | Lumileds Lighting U.S., Llc | III-V light emitting device |
JP4922233B2 (ja) | 2008-04-30 | 2012-04-25 | ジャパンスーパークォーツ株式会社 | 石英ガラスルツボ |
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