JP5710179B2 - イメージ・センサ及びその製造方法 - Google Patents
イメージ・センサ及びその製造方法 Download PDFInfo
- Publication number
- JP5710179B2 JP5710179B2 JP2010186851A JP2010186851A JP5710179B2 JP 5710179 B2 JP5710179 B2 JP 5710179B2 JP 2010186851 A JP2010186851 A JP 2010186851A JP 2010186851 A JP2010186851 A JP 2010186851A JP 5710179 B2 JP5710179 B2 JP 5710179B2
- Authority
- JP
- Japan
- Prior art keywords
- image sensor
- photosensitive region
- reflective layer
- region
- photosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 238000000034 method Methods 0.000 claims description 58
- 229910052751 metal Inorganic materials 0.000 claims description 49
- 239000002184 metal Substances 0.000 claims description 49
- 239000004065 semiconductor Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 35
- 230000005855 radiation Effects 0.000 claims description 19
- 239000010410 layer Substances 0.000 description 164
- 239000000463 material Substances 0.000 description 78
- 238000013461 design Methods 0.000 description 33
- 239000007787 solid Substances 0.000 description 26
- 125000006850 spacer group Chemical group 0.000 description 17
- 239000003989 dielectric material Substances 0.000 description 13
- 238000002955 isolation Methods 0.000 description 13
- 230000005693 optoelectronics Effects 0.000 description 9
- 238000012938 design process Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000011230 binding agent Substances 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 229920000620 organic polymer Polymers 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000000975 dye Substances 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001339 C alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 235000000434 Melocanna baccifera Nutrition 0.000 description 1
- 241001497770 Melocanna baccifera Species 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 241000220010 Rhode Species 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 1
- 239000004964 aerogel Substances 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000005383 fluoride glass Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000000017 hydrogel Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910003471 inorganic composite material Inorganic materials 0.000 description 1
- 238000012804 iterative process Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002491 polymer binding agent Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910021483 silicon-carbon alloy Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
11 分離領域
12 金属配線スタック
12a、12b、12c,12d,12e 誘電体層
13 リフロー可能な材料層
13’リフローされた材料層
15 ライナー層
16 カラー・フィルタ層
17 不透明層
18 レンズ層
20 反射層
22 レジスト層
22’ゲート誘電体
24 ゲート電極
26 スペーサ
28 ソース及びドレイン領域
Claims (20)
- 少なくとも1つのトランジスタを含む感光領域を含む基板と、
前記感光領域の放射光が入射する側と反対の側に配置され、前記感光領域により捕獲されなかった入射放射光を反射して前記感光領域に戻すような形状を有する非平坦状の反射層と、
前記非平坦状の反射層を前記感光領域内の前記トランジスタの導電領域に接続する導電バイアと、
を備えるイメージ・センサ。 - 1つの感光領域の非平坦状の反射層は、前記1つの感光領域により最初に捕獲されなかった入射放射光を、前記1つの感光領域に隣接して前記基板に設けられている他の感光領域へ反射しないような形状を有する、請求項1の記載のイメージ・センサ。
- 前記イメージ・センサは、前面型のイメージ・センサまたは背面型のイメージ・センサである、請求項1の記載のイメージ・センサ。
- 前記入射放射光は赤外線放射である、請求項1の記載のイメージ・センサ。
- 前記感光領域の放射光が入射する側と反対の側に誘電体で分離された金属配線スタックが設けられており、前記反射層は、前記金属配線スタックの誘電体内で絶縁された状態で配置されている、請求項1の記載のイメージ・センサ。
- 前記感光領域の放射光が入射する側と反対の側に誘電体で分離された金属配線スタックが設けられており、前記反射層は、前記金属配線スタックの誘電体内で前記金属配線に接続された状態で配置されている、請求項1の記載のイメージ・センサ。
- 少なくとも1つのトランジスタを含む感光領域を含む基板と、
前記感光領域の放射光が入射する側と反対の側に設けられた誘電体で分離された金属配線スタック内に配置され、前記感光領域により捕獲されなかった入射放射光を反射して前記感光領域に戻すような形状を有する非平坦状の反射層と、
前記非平坦状の反射層を前記感光領域内の前記トランジスタの導電領域に接続する導電バイアと、
を備えるイメージ・センサ。 - 前記感光領域の放射光が入射する側に前記感光領域と位置合わせされて配置されたカラー・フィルタ層を備える、請求項7に記載のイメージ・センサ。
- 前記非平坦状の反射層の形状は、曲面形状である、請求項1または7に記載のイメージ・センサ。
- 前記トランジスタの導電領域は、ソース領域またはドレイン領域である、請求項1または7に記載のイメージ・センサ。
- 少なくとも1つのトランジスタを含む感光領域を含む基板を準備するステップと、
前記感光領域の放射光が入射する側と反対の側に、前記感光領域により捕獲されなかった入射放射光を反射して前記感光領域に戻すような形状を有する非平坦状の反射層を形成するステップと、
前記非平坦状の反射層を前記感光領域内の前記トランジスタの導電領域に接続する導電バイアを形成し、前記反射層を荷電して前記感光領域の表面電位を固定する、ステップと、
を含む、イメージ・センサを製造する方法。 - 前記トランジスタの導電領域は、ソース領域またはドレイン領域である、請求項11に記載の方法。
- 前記非平坦状の反射層の形状は、曲面形状である、請求項11に記載の方法。
- 1つの感光領域の非平坦状の反射層は、前記1つの感光領域により捕獲されなかった入射放射光を反射して前記1つの感光領域に戻し、前記1つの感光領域に隣接して前記基板に設けられている他の感光領域へ反射しないような形状を有する、請求項11に記載の方法。
- 前記感光領域を含む基板を準備するステップは、フォトダイオード感光領域を含む半導体基板を準備する、請求項11に記載の方法。
- 前記非平坦状の反射層を形成するステップは、
前記感光領域の放射光が入射する側と反対の側に設けられた誘電体で分離された金属配線スタック内に前記反射層を配置するステップを含む、請求項11に記載の方法。 - 前記反射層は、前記誘電体で分離された金属配線スタック内の金属配線と同時に形成される、請求項16に記載の方法。
- 前記反射層は、前記誘電体で分離された金属配線スタック内の金属配線と同時に形成されない、請求項11に記載の方法。
- 前記感光領域の放射光が入射する側に前記感光領域と位置合わせしてカラー・フィルタを形成するステップを含む、請求項11に記載の方法。
- 前記感光領域の放射光が入射する側に前記感光領域及び前記カラー・フィルタと位置合わせしてレンズ層を形成するステップを含む、請求項19に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/550,640 US8299554B2 (en) | 2009-08-31 | 2009-08-31 | Image sensor, method and design structure including non-planar reflector |
US12/550640 | 2009-08-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011054963A JP2011054963A (ja) | 2011-03-17 |
JP5710179B2 true JP5710179B2 (ja) | 2015-04-30 |
Family
ID=43623414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010186851A Expired - Fee Related JP5710179B2 (ja) | 2009-08-31 | 2010-08-24 | イメージ・センサ及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8299554B2 (ja) |
JP (1) | JP5710179B2 (ja) |
KR (1) | KR101581052B1 (ja) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8629523B2 (en) * | 2010-04-16 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Inserted reflective shield to improve quantum efficiency of image sensors |
KR20120110377A (ko) * | 2011-03-29 | 2012-10-10 | 삼성전자주식회사 | 이미지 센서 |
JP5956866B2 (ja) * | 2011-09-01 | 2016-07-27 | キヤノン株式会社 | 固体撮像装置 |
JP6587581B2 (ja) * | 2011-09-01 | 2019-10-09 | キヤノン株式会社 | 固体撮像装置 |
US9224773B2 (en) | 2011-11-30 | 2015-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal shielding layer in backside illumination image sensor chips and methods for forming the same |
KR20130099425A (ko) | 2012-02-29 | 2013-09-06 | 삼성전자주식회사 | 이미지 센서 |
US9236408B2 (en) | 2012-04-25 | 2016-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor device including photodiode |
JP6080494B2 (ja) * | 2012-10-26 | 2017-02-15 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP6080495B2 (ja) * | 2012-10-26 | 2017-02-15 | キヤノン株式会社 | 固体撮像装置および撮像システム |
US9236326B2 (en) | 2014-04-25 | 2016-01-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure and fabricating method thereof |
JP2016046336A (ja) * | 2014-08-21 | 2016-04-04 | ソニー株式会社 | 固体撮像素子および製造方法、並びに放射線撮像装置 |
US10110224B2 (en) | 2016-03-14 | 2018-10-23 | Lawrence Livermore National Security, Llc | Triaxial photoconductive switch module |
US10563739B2 (en) | 2016-03-14 | 2020-02-18 | Lawrence Livermore National Security, Llc | Bi-triaxial photoconductive switch module |
JP6921486B2 (ja) * | 2016-06-01 | 2021-08-18 | 凸版印刷株式会社 | 固体撮像素子 |
US10181544B2 (en) | 2016-07-07 | 2019-01-15 | Lawrence Livermore National Security, Llc | Photoconductive switch package configurations having a profiled resistive element |
KR102444733B1 (ko) * | 2016-10-27 | 2022-09-16 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 촬상 소자 및 전자기기 |
EP3550606B1 (en) * | 2016-12-05 | 2022-08-03 | Toppan Printing Co., Ltd. | Solid-state imaging element |
US10170517B2 (en) * | 2016-12-13 | 2019-01-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming image sensor device |
JP2020031074A (ja) * | 2016-12-20 | 2020-02-27 | パナソニックIpマネジメント株式会社 | 固体撮像装置およびその製造方法 |
US10680024B2 (en) * | 2017-08-17 | 2020-06-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Concave reflector for complementary metal oxide semiconductor image sensor (CIS) |
JP7362198B2 (ja) * | 2018-07-18 | 2023-10-17 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、測距モジュール、および、電子機器 |
WO2020103131A1 (zh) * | 2018-11-23 | 2020-05-28 | 深圳市汇顶科技股份有限公司 | 图像传感器及其制造方法 |
CN109585481B (zh) * | 2018-12-03 | 2021-04-06 | 德淮半导体有限公司 | 图像传感器结构及其制备方法 |
US11171172B2 (en) * | 2019-07-16 | 2021-11-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor and method of forming the same |
CN112510057A (zh) * | 2020-11-30 | 2021-03-16 | 维沃移动通信有限公司 | 芯片结构、摄像组件和电子设备 |
TWI824978B (zh) * | 2023-02-14 | 2023-12-01 | 采鈺科技股份有限公司 | 影像感測器 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0682813B2 (ja) * | 1984-07-13 | 1994-10-19 | 日本電気株式会社 | 赤外線検出固体撮像素子の製造方法 |
JPS6482666A (en) * | 1987-09-25 | 1989-03-28 | Mitsubishi Electric Corp | Solid-state image sensor |
JP3303571B2 (ja) * | 1994-12-21 | 2002-07-22 | 三菱電機株式会社 | 赤外線検出器及び赤外線検出器アレイ |
US6465786B1 (en) | 1999-09-01 | 2002-10-15 | Micron Technology, Inc. | Deep infrared photodiode for a CMOS imager |
US20020020846A1 (en) | 2000-04-20 | 2002-02-21 | Bo Pi | Backside illuminated photodiode array |
US7279764B2 (en) | 2004-06-01 | 2007-10-09 | Micron Technology, Inc. | Silicon-based resonant cavity photodiode for image sensors |
JP4826111B2 (ja) | 2005-03-17 | 2011-11-30 | ソニー株式会社 | 固体撮像素子および固体撮像素子の製造方法および画像撮影装置 |
US7124999B1 (en) | 2005-03-29 | 2006-10-24 | Wen Sheng Fu Co., Ltd. | Switch valve having a locking effect |
US20070152289A1 (en) * | 2005-12-30 | 2007-07-05 | Morse Michael T | Avalanche photodetector with reflector-based responsivity enhancement |
US7586139B2 (en) | 2006-02-17 | 2009-09-08 | International Business Machines Corporation | Photo-sensor and pixel array with backside illumination and method of forming the photo-sensor |
US7755123B2 (en) * | 2007-08-24 | 2010-07-13 | Aptina Imaging Corporation | Apparatus, system, and method providing backside illuminated imaging device |
US7982177B2 (en) * | 2008-01-31 | 2011-07-19 | Omnivision Technologies, Inc. | Frontside illuminated image sensor comprising a complex-shaped reflector |
JP2010118412A (ja) * | 2008-11-11 | 2010-05-27 | Panasonic Corp | 固体撮像装置及びその製造方法 |
-
2009
- 2009-08-31 US US12/550,640 patent/US8299554B2/en not_active Expired - Fee Related
-
2010
- 2010-08-06 KR KR1020100075901A patent/KR101581052B1/ko not_active IP Right Cessation
- 2010-08-24 JP JP2010186851A patent/JP5710179B2/ja not_active Expired - Fee Related
-
2012
- 2012-09-13 US US13/614,210 patent/US8647913B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8647913B2 (en) | 2014-02-11 |
JP2011054963A (ja) | 2011-03-17 |
KR101581052B1 (ko) | 2016-01-11 |
US8299554B2 (en) | 2012-10-30 |
US20110049330A1 (en) | 2011-03-03 |
KR20110023741A (ko) | 2011-03-08 |
US20130001727A1 (en) | 2013-01-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5710179B2 (ja) | イメージ・センサ及びその製造方法 | |
JP2010212668A (ja) | 遮光部を含む画素センサ・セルおよび製造方法 | |
CN108028259B (zh) | 成像元件、成像元件的制造方法、成像装置以及成像装置的制造方法 | |
CN103403869B (zh) | 固态成像装置、固态成像装置的制造方法和电子设备 | |
CN102738185B (zh) | 用于背照式图像传感器金属栅格的侧壁及其制造方法 | |
TWI332262B (en) | Method for manufacturing cmos image sensor using spacer etching barrier film | |
EP1930950B1 (en) | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera | |
KR100392044B1 (ko) | 적외선 센서 및 그 제조 방법 | |
JP4383959B2 (ja) | 光電変換装置およびその製造方法 | |
US8546173B2 (en) | Photoelectric conversion device and fabrication method therefor | |
US7935560B2 (en) | Imagers having electrically active optical elements | |
TWI756301B (zh) | 光感測元件及其形成方法 | |
US7732845B2 (en) | Pixel sensor with reduced image lag | |
CN107240593B (zh) | 一种堆叠式全局曝光像素单元结构及其形成方法 | |
TW201103130A (en) | Vertically stacked image sensors with cutoff filters | |
JP2003229553A (ja) | 半導体装置及びその製造方法 | |
JP2012023251A (ja) | 固体撮像素子及び固体撮像素子の製造方法、電子機器 | |
JP2008270500A (ja) | 固体撮像素子およびその製造方法、電子情報機器 | |
US11843013B2 (en) | Polarizers for image sensor devices | |
KR100784871B1 (ko) | 내부 렌즈를 구비한 이미지 센서의 제조방법 | |
Fontaine | Recent innovations in CMOS image sensors | |
US20060057759A1 (en) | System and method to improve image sensor sensitivity | |
US20210389184A1 (en) | Light receiving device | |
JP5535261B2 (ja) | 固体撮像装置 | |
CN105762160B (zh) | 背照式全局像素单元结构及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130501 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140530 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140603 |
|
RD12 | Notification of acceptance of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7432 Effective date: 20140811 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140823 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20140812 |
|
TRDD | Decision of grant or rejection written | ||
RD14 | Notification of resignation of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7434 Effective date: 20150217 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150217 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150304 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5710179 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |