JP5709546B2 - エネルギービーム描画装置及びデバイス製造方法 - Google Patents

エネルギービーム描画装置及びデバイス製造方法 Download PDF

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Publication number
JP5709546B2
JP5709546B2 JP2011009198A JP2011009198A JP5709546B2 JP 5709546 B2 JP5709546 B2 JP 5709546B2 JP 2011009198 A JP2011009198 A JP 2011009198A JP 2011009198 A JP2011009198 A JP 2011009198A JP 5709546 B2 JP5709546 B2 JP 5709546B2
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Japan
Prior art keywords
catalyst
energy beam
substrate
gas
irradiated
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Expired - Fee Related
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JP2011009198A
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English (en)
Japanese (ja)
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JP2012151304A5 (enExample
JP2012151304A (ja
Inventor
貴博 中山
貴博 中山
茂 寺島
茂 寺島
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011009198A priority Critical patent/JP5709546B2/ja
Priority to US13/353,571 priority patent/US8563950B2/en
Publication of JP2012151304A publication Critical patent/JP2012151304A/ja
Publication of JP2012151304A5 publication Critical patent/JP2012151304A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Environmental & Geological Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2011009198A 2011-01-19 2011-01-19 エネルギービーム描画装置及びデバイス製造方法 Expired - Fee Related JP5709546B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011009198A JP5709546B2 (ja) 2011-01-19 2011-01-19 エネルギービーム描画装置及びデバイス製造方法
US13/353,571 US8563950B2 (en) 2011-01-19 2012-01-19 Energy beam drawing apparatus and method of manufacturing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011009198A JP5709546B2 (ja) 2011-01-19 2011-01-19 エネルギービーム描画装置及びデバイス製造方法

Publications (3)

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JP2012151304A JP2012151304A (ja) 2012-08-09
JP2012151304A5 JP2012151304A5 (enExample) 2014-03-06
JP5709546B2 true JP5709546B2 (ja) 2015-04-30

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Country Link
US (1) US8563950B2 (enExample)
JP (1) JP5709546B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5759186B2 (ja) * 2011-01-19 2015-08-05 キヤノン株式会社 荷電粒子線描画装置及びデバイス製造方法
JP5709546B2 (ja) * 2011-01-19 2015-04-30 キヤノン株式会社 エネルギービーム描画装置及びデバイス製造方法
CN106933063B (zh) * 2012-03-20 2019-01-18 迈普尔平版印刷Ip有限公司 电子射束光刻系统
KR101586181B1 (ko) * 2013-03-28 2016-01-15 시바우라 메카트로닉스 가부시끼가이샤 적재대 및 플라즈마 처리 장치
WO2016103432A1 (ja) * 2014-12-26 2016-06-30 株式会社 日立ハイテクノロジーズ 複合荷電粒子線装置およびその制御方法
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
DE102018221191A1 (de) * 2018-12-07 2020-06-10 Carl Zeiss Smt Gmbh Optisches Element zur Reflexion von VUV-Strahlung und optische Anordnung

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US6146135A (en) * 1991-08-19 2000-11-14 Tadahiro Ohmi Oxide film forming method
JP2666734B2 (ja) * 1994-08-30 1997-10-22 日本電気株式会社 無機レジスト描画装置及び描画方法
JP3827359B2 (ja) * 1996-03-19 2006-09-27 富士通株式会社 荷電粒子ビーム露光方法及びその装置
JP3047293B1 (ja) * 1999-01-18 2000-05-29 株式会社日立製作所 荷電粒子ビ―ム装置およびこれを用いた半導体集積回路
JP2002237443A (ja) * 2001-02-09 2002-08-23 Nikon Corp 汚染除去装置、露光装置の汚染除去方法及び露光装置
US6664554B2 (en) * 2001-01-03 2003-12-16 Euv Llc Self-cleaning optic for extreme ultraviolet lithography
JP2003124089A (ja) * 2001-10-09 2003-04-25 Nikon Corp 荷電粒子線露光装置及び露光方法
JP3789089B2 (ja) * 2001-10-15 2006-06-21 キヤノン株式会社 画像形成装置
JP2003227898A (ja) * 2002-02-01 2003-08-15 Nikon Corp 多層膜反射鏡、軟ｘ線光学機器、露光装置及びその清掃方法
US20040011381A1 (en) * 2002-07-17 2004-01-22 Klebanoff Leonard E. Method for removing carbon contamination from optic surfaces
DE60323927D1 (de) * 2002-12-13 2008-11-20 Asml Netherlands Bv Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
JP2005050579A (ja) * 2003-07-30 2005-02-24 Hitachi High-Technologies Corp 荷電粒子線装置
ATE555422T1 (de) * 2004-07-22 2012-05-15 Koninkl Philips Electronics Nv Optisches system mit einer reinigungsanordnung
US7355672B2 (en) * 2004-10-04 2008-04-08 Asml Netherlands B.V. Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus
US7868304B2 (en) * 2005-02-07 2011-01-11 Asml Netherlands B.V. Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7262408B2 (en) * 2005-06-15 2007-08-28 Board Of Trustees Of Michigan State University Process and apparatus for modifying a surface in a work region
US7561247B2 (en) * 2005-08-22 2009-07-14 Asml Netherlands B.V. Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus
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JP5178724B2 (ja) * 2006-09-04 2013-04-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 汚染物質又は望ましくない物質で覆われた表面領域をクリーニングする方法
US7671347B2 (en) * 2006-10-10 2010-03-02 Asml Netherlands B.V. Cleaning method, apparatus and cleaning system
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JP2009016640A (ja) * 2007-07-06 2009-01-22 Ushio Inc 極端紫外光光源装置及び極端紫外光集光鏡のクリーニング方法
US7894037B2 (en) * 2007-07-30 2011-02-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009302185A (ja) * 2008-06-11 2009-12-24 Canon Inc 処理装置
US8384007B2 (en) * 2009-10-07 2013-02-26 Zena Technologies, Inc. Nano wire based passive pixel image sensor
JP5759186B2 (ja) * 2011-01-19 2015-08-05 キヤノン株式会社 荷電粒子線描画装置及びデバイス製造方法
JP5709546B2 (ja) * 2011-01-19 2015-04-30 キヤノン株式会社 エネルギービーム描画装置及びデバイス製造方法

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Publication number Publication date
US8563950B2 (en) 2013-10-22
JP2012151304A (ja) 2012-08-09
US20120181455A1 (en) 2012-07-19

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