JP2012151304A5 - - Google Patents
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- Publication number
- JP2012151304A5 JP2012151304A5 JP2011009198A JP2011009198A JP2012151304A5 JP 2012151304 A5 JP2012151304 A5 JP 2012151304A5 JP 2011009198 A JP2011009198 A JP 2011009198A JP 2011009198 A JP2011009198 A JP 2011009198A JP 2012151304 A5 JP2012151304 A5 JP 2012151304A5
- Authority
- JP
- Japan
- Prior art keywords
- energy beam
- catalyst
- substrate
- drawing apparatus
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003054 catalyst Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052702 rhenium Inorganic materials 0.000 claims 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011009198A JP5709546B2 (ja) | 2011-01-19 | 2011-01-19 | エネルギービーム描画装置及びデバイス製造方法 |
| US13/353,571 US8563950B2 (en) | 2011-01-19 | 2012-01-19 | Energy beam drawing apparatus and method of manufacturing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011009198A JP5709546B2 (ja) | 2011-01-19 | 2011-01-19 | エネルギービーム描画装置及びデバイス製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012151304A JP2012151304A (ja) | 2012-08-09 |
| JP2012151304A5 true JP2012151304A5 (enExample) | 2014-03-06 |
| JP5709546B2 JP5709546B2 (ja) | 2015-04-30 |
Family
ID=46490078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011009198A Expired - Fee Related JP5709546B2 (ja) | 2011-01-19 | 2011-01-19 | エネルギービーム描画装置及びデバイス製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8563950B2 (enExample) |
| JP (1) | JP5709546B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5759186B2 (ja) * | 2011-01-19 | 2015-08-05 | キヤノン株式会社 | 荷電粒子線描画装置及びデバイス製造方法 |
| JP5709546B2 (ja) * | 2011-01-19 | 2015-04-30 | キヤノン株式会社 | エネルギービーム描画装置及びデバイス製造方法 |
| CN106933063B (zh) * | 2012-03-20 | 2019-01-18 | 迈普尔平版印刷Ip有限公司 | 电子射束光刻系统 |
| KR101586181B1 (ko) * | 2013-03-28 | 2016-01-15 | 시바우라 메카트로닉스 가부시끼가이샤 | 적재대 및 플라즈마 처리 장치 |
| WO2016103432A1 (ja) * | 2014-12-26 | 2016-06-30 | 株式会社 日立ハイテクノロジーズ | 複合荷電粒子線装置およびその制御方法 |
| US9981293B2 (en) | 2016-04-21 | 2018-05-29 | Mapper Lithography Ip B.V. | Method and system for the removal and/or avoidance of contamination in charged particle beam systems |
| DE102018221191A1 (de) * | 2018-12-07 | 2020-06-10 | Carl Zeiss Smt Gmbh | Optisches Element zur Reflexion von VUV-Strahlung und optische Anordnung |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6146135A (en) * | 1991-08-19 | 2000-11-14 | Tadahiro Ohmi | Oxide film forming method |
| JP2666734B2 (ja) * | 1994-08-30 | 1997-10-22 | 日本電気株式会社 | 無機レジスト描画装置及び描画方法 |
| JP3827359B2 (ja) * | 1996-03-19 | 2006-09-27 | 富士通株式会社 | 荷電粒子ビーム露光方法及びその装置 |
| JP3047293B1 (ja) * | 1999-01-18 | 2000-05-29 | 株式会社日立製作所 | 荷電粒子ビ―ム装置およびこれを用いた半導体集積回路 |
| JP2002237443A (ja) * | 2001-02-09 | 2002-08-23 | Nikon Corp | 汚染除去装置、露光装置の汚染除去方法及び露光装置 |
| US6664554B2 (en) * | 2001-01-03 | 2003-12-16 | Euv Llc | Self-cleaning optic for extreme ultraviolet lithography |
| JP2003124089A (ja) * | 2001-10-09 | 2003-04-25 | Nikon Corp | 荷電粒子線露光装置及び露光方法 |
| JP3789089B2 (ja) * | 2001-10-15 | 2006-06-21 | キヤノン株式会社 | 画像形成装置 |
| JP2003227898A (ja) * | 2002-02-01 | 2003-08-15 | Nikon Corp | 多層膜反射鏡、軟x線光学機器、露光装置及びその清掃方法 |
| US20040011381A1 (en) * | 2002-07-17 | 2004-01-22 | Klebanoff Leonard E. | Method for removing carbon contamination from optic surfaces |
| DE60323927D1 (de) * | 2002-12-13 | 2008-11-20 | Asml Netherlands Bv | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
| JP2005050579A (ja) * | 2003-07-30 | 2005-02-24 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
| ATE555422T1 (de) * | 2004-07-22 | 2012-05-15 | Koninkl Philips Electronics Nv | Optisches system mit einer reinigungsanordnung |
| US7355672B2 (en) * | 2004-10-04 | 2008-04-08 | Asml Netherlands B.V. | Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus |
| US7868304B2 (en) * | 2005-02-07 | 2011-01-11 | Asml Netherlands B.V. | Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US7262408B2 (en) * | 2005-06-15 | 2007-08-28 | Board Of Trustees Of Michigan State University | Process and apparatus for modifying a surface in a work region |
| US7561247B2 (en) * | 2005-08-22 | 2009-07-14 | Asml Netherlands B.V. | Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus |
| US7473908B2 (en) * | 2006-07-14 | 2009-01-06 | Asml Netherlands B.V. | Getter and cleaning arrangement for a lithographic apparatus and method for cleaning a surface |
| JP5178724B2 (ja) * | 2006-09-04 | 2013-04-10 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 汚染物質又は望ましくない物質で覆われた表面領域をクリーニングする方法 |
| US7671347B2 (en) * | 2006-10-10 | 2010-03-02 | Asml Netherlands B.V. | Cleaning method, apparatus and cleaning system |
| US8330090B2 (en) * | 2007-05-07 | 2012-12-11 | Nxp, B.V. | Photosensitive device and method of manufacturing a photosensitive device using nanowire diodes |
| JP2009016640A (ja) * | 2007-07-06 | 2009-01-22 | Ushio Inc | 極端紫外光光源装置及び極端紫外光集光鏡のクリーニング方法 |
| US7894037B2 (en) * | 2007-07-30 | 2011-02-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2009302185A (ja) * | 2008-06-11 | 2009-12-24 | Canon Inc | 処理装置 |
| US8384007B2 (en) * | 2009-10-07 | 2013-02-26 | Zena Technologies, Inc. | Nano wire based passive pixel image sensor |
| JP5759186B2 (ja) * | 2011-01-19 | 2015-08-05 | キヤノン株式会社 | 荷電粒子線描画装置及びデバイス製造方法 |
| JP5709546B2 (ja) * | 2011-01-19 | 2015-04-30 | キヤノン株式会社 | エネルギービーム描画装置及びデバイス製造方法 |
-
2011
- 2011-01-19 JP JP2011009198A patent/JP5709546B2/ja not_active Expired - Fee Related
-
2012
- 2012-01-19 US US13/353,571 patent/US8563950B2/en not_active Expired - Fee Related
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