JP5707889B2 - 半導体基板の切断方法及び半導体基板の切断装置 - Google Patents
半導体基板の切断方法及び半導体基板の切断装置 Download PDFInfo
- Publication number
- JP5707889B2 JP5707889B2 JP2010256218A JP2010256218A JP5707889B2 JP 5707889 B2 JP5707889 B2 JP 5707889B2 JP 2010256218 A JP2010256218 A JP 2010256218A JP 2010256218 A JP2010256218 A JP 2010256218A JP 5707889 B2 JP5707889 B2 JP 5707889B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- semiconductor substrate
- modified region
- region
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005520 cutting process Methods 0.000 title claims description 85
- 239000000758 substrate Substances 0.000 title claims description 77
- 238000000034 method Methods 0.000 title claims description 60
- 239000004065 semiconductor Substances 0.000 title claims description 57
- 238000000227 grinding Methods 0.000 claims description 102
- 238000005498 polishing Methods 0.000 claims description 96
- 238000002407 reforming Methods 0.000 claims description 66
- 238000005452 bending Methods 0.000 claims description 43
- 239000000126 substance Substances 0.000 claims description 20
- 230000001678 irradiating effect Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 230000000644 propagated effect Effects 0.000 claims description 10
- 238000007517 polishing process Methods 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 324
- 230000035882 stress Effects 0.000 description 36
- 239000004744 fabric Substances 0.000 description 29
- 230000033001 locomotion Effects 0.000 description 28
- 230000008569 process Effects 0.000 description 21
- 238000012545 processing Methods 0.000 description 20
- 238000009833 condensation Methods 0.000 description 17
- 230000005494 condensation Effects 0.000 description 17
- 239000000463 material Substances 0.000 description 15
- 238000004140 cleaning Methods 0.000 description 13
- 230000004048 modification Effects 0.000 description 13
- 238000012986 modification Methods 0.000 description 13
- 238000012546 transfer Methods 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 239000000428 dust Substances 0.000 description 9
- 238000005192 partition Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 230000003685 thermal hair damage Effects 0.000 description 5
- 230000005284 excitation Effects 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 230000011218 segmentation Effects 0.000 description 3
- 229920005830 Polyurethane Foam Polymers 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000011496 polyurethane foam Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000001502 gel electrophoresis Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Dicing (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010256218A JP5707889B2 (ja) | 2010-11-16 | 2010-11-16 | 半導体基板の切断方法及び半導体基板の切断装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010256218A JP5707889B2 (ja) | 2010-11-16 | 2010-11-16 | 半導体基板の切断方法及び半導体基板の切断装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012109358A JP2012109358A (ja) | 2012-06-07 |
JP2012109358A5 JP2012109358A5 (enrdf_load_stackoverflow) | 2013-12-05 |
JP5707889B2 true JP5707889B2 (ja) | 2015-04-30 |
Family
ID=46494677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010256218A Active JP5707889B2 (ja) | 2010-11-16 | 2010-11-16 | 半導体基板の切断方法及び半導体基板の切断装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5707889B2 (enrdf_load_stackoverflow) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5670764B2 (ja) * | 2011-01-13 | 2015-02-18 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP5882154B2 (ja) | 2012-07-19 | 2016-03-09 | 太陽誘電株式会社 | 弾性波デバイスの製造方法 |
JP6255219B2 (ja) * | 2013-11-14 | 2017-12-27 | 株式会社ディスコ | 冷却機構 |
JP6521695B2 (ja) * | 2015-03-27 | 2019-05-29 | 株式会社ディスコ | ウエーハの加工方法 |
CN104889577A (zh) * | 2015-06-23 | 2015-09-09 | 无锡宏纳科技有限公司 | 一种平面光波导分路器晶圆激光切割工艺 |
JP6608713B2 (ja) * | 2016-01-19 | 2019-11-20 | 株式会社ディスコ | ウエーハの加工方法 |
JP6620825B2 (ja) | 2017-02-27 | 2019-12-18 | 日亜化学工業株式会社 | 半導体素子の製造方法 |
JP6818351B2 (ja) * | 2017-04-14 | 2021-01-20 | サムコ株式会社 | ウエハ処理装置 |
JP7020675B2 (ja) * | 2018-02-26 | 2022-02-16 | 三星ダイヤモンド工業株式会社 | Low-k膜付きウエハの分断方法 |
JP7081993B2 (ja) * | 2018-06-19 | 2022-06-07 | 株式会社ディスコ | 被加工物の加工方法 |
JP7058738B2 (ja) * | 2018-07-19 | 2022-04-22 | 東京エレクトロン株式会社 | 基板処理システム及び基板処理方法 |
JP7171353B2 (ja) * | 2018-10-04 | 2022-11-15 | 浜松ホトニクス株式会社 | レーザ加工方法、半導体デバイス製造方法及び検査装置 |
JP7307533B2 (ja) * | 2018-10-04 | 2023-07-12 | 浜松ホトニクス株式会社 | レーザ加工方法、半導体デバイス製造方法及び検査装置 |
JP7307534B2 (ja) * | 2018-10-04 | 2023-07-12 | 浜松ホトニクス株式会社 | レーザ加工方法、半導体デバイス製造方法及び検査装置 |
WO2020105483A1 (ja) * | 2018-11-21 | 2020-05-28 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP7178491B2 (ja) * | 2019-04-19 | 2022-11-25 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
TWI857094B (zh) * | 2019-07-18 | 2024-10-01 | 日商東京威力科創股份有限公司 | 處理裝置及處理方法 |
CN111300161B (zh) * | 2020-02-26 | 2022-02-01 | 上海东竞自动化系统有限公司 | 表面划痕修复的方法和设备 |
JP7708609B2 (ja) * | 2021-08-05 | 2025-07-15 | 株式会社ディスコ | 基板の分割方法 |
CN118832322B (zh) * | 2024-09-23 | 2024-11-22 | 深圳市智越盛电子科技有限公司 | 一种时钟晶体加工用的激光切割装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5276872A (en) * | 1975-12-23 | 1977-06-28 | Fujitsu Ltd | Cutting method of semiconductor wafer |
JP4440582B2 (ja) * | 2003-09-10 | 2010-03-24 | 浜松ホトニクス株式会社 | 半導体基板の切断方法 |
JP4739900B2 (ja) * | 2005-10-13 | 2011-08-03 | リンテック株式会社 | 転着装置及び転着方法 |
JP2009166150A (ja) * | 2008-01-11 | 2009-07-30 | Denso Corp | ウェハの製造方法 |
CN102307699B (zh) * | 2009-02-09 | 2015-07-15 | 浜松光子学株式会社 | 加工对象物的切断方法 |
-
2010
- 2010-11-16 JP JP2010256218A patent/JP5707889B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2012109358A (ja) | 2012-06-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5707889B2 (ja) | 半導体基板の切断方法及び半導体基板の切断装置 | |
JP5953645B2 (ja) | 半導体基板の切断方法及び半導体基板の切断装置 | |
JP6703073B2 (ja) | ウェハ加工方法及びウェハ加工システム | |
JP6081006B2 (ja) | ウェハ割断方法及びウェハ割断装置 | |
JP5803049B2 (ja) | 半導体基板の切断方法 | |
JP6703072B2 (ja) | ウェハ加工方法及びウェハ加工システム | |
JP6249318B2 (ja) | 抗折強度の高い薄型チップの製造システム及び製造方法 | |
JP6327490B2 (ja) | ウェハ加工装置及びウェハ加工方法 | |
JP6081005B2 (ja) | 研削・研磨装置及び研削・研磨方法 | |
JP6593663B2 (ja) | ウェハ加工方法及びウェハ加工システム | |
JP6128666B2 (ja) | 半導体基板の割断方法及び割断装置 | |
JP6081008B2 (ja) | ウェハ加工装置及びウェハ加工方法 | |
JP2019169719A (ja) | レーザ加工システム | |
JP7617357B2 (ja) | 亀裂進展装置及び亀裂進展方法 | |
JP2019012850A (ja) | ウェハ加工方法及びウェハ加工システム | |
JP2019068077A (ja) | レーザ加工装置及びレーザ加工方法 | |
JP2020080409A (ja) | レーザ加工システム及びレーザ加工方法 | |
JP2018142717A (ja) | ウェハ加工方法及びウェハ加工システム | |
JP6979607B2 (ja) | 研削装置及び研削方法 | |
JP2017092503A (ja) | ウェハ分割システム及びウェハ分割方法 | |
JP2019161232A (ja) | レーザ加工システム | |
JP7290843B2 (ja) | 亀裂進展装置及び亀裂進展方法 | |
JP2019096911A (ja) | レーザ加工システム | |
JP2019071476A (ja) | レーザ光学部 | |
JP2019071475A (ja) | レーザ光学部 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20131016 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131018 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140828 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150203 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150216 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5707889 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |