JP5707174B2 - 磁気抵抗効果素子の製造方法 - Google Patents

磁気抵抗効果素子の製造方法 Download PDF

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Publication number
JP5707174B2
JP5707174B2 JP2011043861A JP2011043861A JP5707174B2 JP 5707174 B2 JP5707174 B2 JP 5707174B2 JP 2011043861 A JP2011043861 A JP 2011043861A JP 2011043861 A JP2011043861 A JP 2011043861A JP 5707174 B2 JP5707174 B2 JP 5707174B2
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Japan
Prior art keywords
layer
protective layer
film
space
forming
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JP2011043861A
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English (en)
Japanese (ja)
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JP2011238900A (ja
JP2011238900A5 (enExample
Inventor
尚子 松井
尚子 松井
英司 尾崎
英司 尾崎
洋 赤坂
洋 赤坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
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Canon Anelva Corp
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Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to JP2011043861A priority Critical patent/JP5707174B2/ja
Priority to US13/087,054 priority patent/US8465990B2/en
Priority to TW100113194A priority patent/TWI450427B/zh
Publication of JP2011238900A publication Critical patent/JP2011238900A/ja
Publication of JP2011238900A5 publication Critical patent/JP2011238900A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Chemical Vapour Deposition (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
JP2011043861A 2010-04-16 2011-03-01 磁気抵抗効果素子の製造方法 Active JP5707174B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011043861A JP5707174B2 (ja) 2010-04-16 2011-03-01 磁気抵抗効果素子の製造方法
US13/087,054 US8465990B2 (en) 2010-04-16 2011-04-14 Manufacturing method of magneto-resistance effect element
TW100113194A TWI450427B (zh) 2010-04-16 2011-04-15 磁阻效應元件的製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010095253 2010-04-16
JP2010095253 2010-04-16
JP2011043861A JP5707174B2 (ja) 2010-04-16 2011-03-01 磁気抵抗効果素子の製造方法

Publications (3)

Publication Number Publication Date
JP2011238900A JP2011238900A (ja) 2011-11-24
JP2011238900A5 JP2011238900A5 (enExample) 2014-04-03
JP5707174B2 true JP5707174B2 (ja) 2015-04-22

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JP2011043861A Active JP5707174B2 (ja) 2010-04-16 2011-03-01 磁気抵抗効果素子の製造方法

Country Status (3)

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US (1) US8465990B2 (enExample)
JP (1) JP5707174B2 (enExample)
TW (1) TWI450427B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5309213B2 (ja) 2009-08-25 2013-10-09 キヤノンアネルバ株式会社 プラズマ処理装置およびデバイスの製造方法
JP5843602B2 (ja) 2011-12-22 2016-01-13 キヤノンアネルバ株式会社 プラズマ処理装置
JP5956612B2 (ja) * 2012-12-19 2016-07-27 キヤノンアネルバ株式会社 グリッドアセンブリおよびイオンビームエッチング装置
US9130156B2 (en) 2013-02-08 2015-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Process to remove film from semiconductor devices
US9087981B2 (en) 2013-02-08 2015-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming a magnetic tunnel junction device
US9166153B2 (en) * 2013-02-08 2015-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. System and process to remove film from semiconductor devices
KR102240769B1 (ko) 2014-08-14 2021-04-16 삼성전자주식회사 자기 메모리 장치 및 그의 형성방법
JP6586328B2 (ja) * 2015-09-04 2019-10-02 東京エレクトロン株式会社 被処理体を処理する方法
JP6951901B2 (ja) * 2017-08-07 2021-10-20 宇部マテリアルズ株式会社 電子デバイス装置製造用積層体の製造方法
JP7131527B2 (ja) * 2019-10-24 2022-09-06 Tdk株式会社 磁気センサ及びその製造方法、並びに磁気検出装置及び磁気検出システム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000345349A (ja) * 1999-06-04 2000-12-12 Anelva Corp Ｃｖｄ装置
JP3366301B2 (ja) * 1999-11-10 2003-01-14 日本電気株式会社 プラズマｃｖｄ装置
JP2001164371A (ja) * 1999-12-07 2001-06-19 Nec Corp プラズマｃｖｄ装置およびプラズマｃｖｄ成膜法
US6759081B2 (en) 2001-05-11 2004-07-06 Asm International, N.V. Method of depositing thin films for magnetic heads
US6826022B2 (en) * 2001-08-13 2004-11-30 Alps Electric Co., Ltd. CPP type magnetic sensor or magnetic sensor using tunnel effect, and manufacturing method therefor
JP2005089823A (ja) * 2003-09-17 2005-04-07 Seiji Sagawa 成膜装置および成膜方法
JP2006210794A (ja) * 2005-01-31 2006-08-10 Fujitsu Ltd 磁気抵抗効果素子、その製造方法、及び、磁気記録装置
JP2007305645A (ja) * 2006-05-09 2007-11-22 Nec Corp 磁気メモリ装置、及びその製造方法
JP4719208B2 (ja) * 2007-12-20 2011-07-06 株式会社東芝 磁気ランダムアクセスメモリの製造方法
US8803263B2 (en) * 2008-09-03 2014-08-12 Fuji Electric Co., Ltd. Magnetic memory element and storage device using the same

Also Published As

Publication number Publication date
US8465990B2 (en) 2013-06-18
TW201214814A (en) 2012-04-01
US20110256642A1 (en) 2011-10-20
TWI450427B (zh) 2014-08-21
JP2011238900A (ja) 2011-11-24

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