JP5705937B2 - Bonding device manufacturing apparatus and manufacturing method - Google Patents

Description

  The present invention may be a flat panel display (FPD) or a sensor device such as a liquid crystal display (LCD), an organic EL display (OLED), a plasma display (PDP), or a flexible display, or a touch panel type FPD or 3D (three-dimensional). Bonding another substrate such as a touch panel, cover glass, cover film, or FPD to a substrate such as a liquid crystal module (LCM) or flexible printed wiring board (FPC) such as a display or electronic book It is related with the manufacturing apparatus of a device, and the manufacturing method of a bonding device.

Conventionally, as a manufacturing apparatus and a manufacturing method of this type of bonding device, an adhesive is applied at a certain height to one or both of the wafer and the facing surface of the cover plate covering the wafer, and the wafer and the cover plate are Overlap in the reduced closed space to form a sealed space surrounded by the adhesive between them, and then open the closed space to the atmosphere to create a pressure difference with the internal pressure of the sealed space There is one that generates and pressurizes the wafer and the cover plate evenly by this pressure difference (see, for example, Patent Document 1). Thereby, the adhesive is crushed to form a predetermined gap between the wafer and the cover plate, and the wafer and the cover plate can be bonded in parallel at a predetermined interval without a spacer.
Further, the volume of gas sealed in the sealing space at the time of superposition is calculated from the application height of the adhesive and the area in the sealing space surrounded by the adhesive, and the wafer and the After the pasting, the sealing gas volume at the time of the superposition is calculated by calculating the volume of the sealing gas in the sealing space when the cover plate is pasted and the distance between the two is crushed to a desired gap. The internal pressure of the sealed space is set so that a pressure difference necessary for compressing to the volume of the sealed gas is generated when the closed space is opened to the atmosphere. Thereby, the gap between the wafer and the cover plate can be adjusted based on the previously calculated value.

Japanese Patent No. 4373491

By the way, the ultraviolet curing type or thermosetting type sealing material used as the adhesive is applied at almost the same height over the entire circumference so as to surround the sealing space. As an example of the application of the sealing material, as shown in FIGS. 12A to 12C, a plurality of sealing spaces 3s ′ are formed on the upper substrate 1 ′ and the lower substrate 2 ′ serving as a wafer or a cover plate. In some cases, the devices are arranged at predetermined intervals and divided into devices in which each sealing space 3s ′ is hermetically sealed after bonding. Even in such a case, since it is necessary to reliably form the sealing space 3 s ′ in each device, the application height of the sealing material 3 ′ must be almost the same.
Accordingly, as shown in FIG. 12 (a), when a difference occurs in the coating height of the sealing material 3 ', the overlapping height of the upper substrate 1' and the lower substrate 2 'is as shown in FIG. As shown in FIG. 3, it is not sufficient if even one sealing material 3 'is not in contact with the upper substrate 1'. That is, as shown in FIG. 12C, the upper substrate 1 'is vacuum-adsorbed by the upper suction chuck 11' and moved closer to the lower substrate 2 'to a position where it comes into contact with all the sealing materials 3'. There is a need.
However, as shown in FIG. 12C, when the upper suction chuck 11 'is pressed to the position where most of the sealing material 3' is crushed by the upper substrate 1 'which is vacuum-adsorbed, the upper suction chuck 11' Since the chuck surface and the surface of the upper substrate 1 'remain in close contact with each other, the surface of the upper substrate 1' cannot be separated from the chuck surface of the upper suction chuck 11 '. In this state, even if a pressure difference is generated between the sealed space 3s ′ surrounded by the sealing material 3 ′ and the variable pressure chamber 10 ′ serving as a closed space, the upper substrate 1 ′ and the lower substrate 2 ′ are generally uniform. It is not possible to apply pressure and bond together with a predetermined gap.
That is, if the chuck surface of the upper suction chuck 11 ′ is separated from the surface of the upper substrate 1 ′ in the overlapped state and no gap is formed between them, the upper substrate 1 ′ and the lower substrate 2 ′ with a predetermined gap due to a pressure difference are formed. There was a problem that it was not possible to realize the pasting.
Therefore, in order to solve such problems, a fluid such as compressed air is blown from the chuck surface of the upper suction chuck 11 'toward the surface of the upper substrate 1', so that the upper substrate 1 'in an overlapped state is formed. It is conceivable to forcibly separate the chuck surface of the upper suction chuck 11 'from the surface.
However, such forced separation causes the uncured sealing material 3 ′ to be excessively crushed by spraying the fluid, resulting in disorder of the coating pattern shape, or included in the sealing material 3 ′ due to excessive crushing. There is also a possibility that a solid component such as a filler and a liquid component are separated or another problem occurs. Further, when a fluid such as compressed air is blown out from the chuck surface of the upper suction chuck 11 'in the decompressed variable pressure chamber 10', strong air vibration is generated in the pipe line of the upper suction chuck 11 'and in the variable pressure chamber 10'. In addition, there is a possibility of causing mechanical vibration to the adsorbed upper substrate 1 '.

  An object of the present invention is to cope with such a problem, by separating one suction chuck from one substrate in an overlapped state without affecting the uncured sealing material. The purpose is to realize bonding between substrates without disturbing the shape of the sealing material.

In order to achieve such an object, a bonding device manufacturing apparatus according to the present invention has a sealed space surrounded by an uncured sealing material between a pair of substrates in a reduced pressure transformer chamber. A bonding device manufacturing apparatus that is formed and pressurizes the substrate evenly and bonds it with a predetermined gap by a pressure difference generated between the internal pressure of the variable pressure chamber opened to the atmosphere and the sealed space. And a pair of suction chucks that are detachably adsorbed and held at a first degree of vacuum so that the sealing material is sandwiched in the transformer chamber, and the transformer chamber in which the substrate is detachably accommodated. In the variable pressure chamber reduced to a second degree of vacuum higher than the first degree of vacuum, one or both of the suction chucks are moved relatively close to each other in the Z direction to overlap the substrates. Moving means, first suction pressure adjusting means for adjusting the suction pressure of one of the suction chucks, second suction pressure adjusting means for adjusting the other suction pressure of the suction chuck, and A chamber pressure adjusting means for adjusting the internal pressure from the atmospheric atmosphere to a predetermined vacuum pressure, and a control for controlling the operation of the driving means, the first suction pressure adjusting means, the second suction pressure adjusting means, and the chamber pressure adjusting means, respectively. And the controller is configured to superimpose the substrate in the variable pressure chamber of the second degree of vacuum by the driving means, and is surrounded by the uncured sealing material between the substrates. Is formed, the first suction pressure adjusting means causes the suction pressure of any one of the suction chucks to be higher than the first vacuum degree at the time of stacking the substrates and to the internal pressure of the variable pressure chamber. Equal The second vacuum degree is raised, and thereafter, the first suction pressure adjusting means and the chamber pressure adjusting means cause the suction pressure of one of the suction chucks and the internal pressure of the variable pressure chamber to be changed from the second vacuum degree. After increasing to a third vacuum degree higher than that and a negative pressure from atmospheric pressure, the third vacuum degree is maintained for a predetermined time, and the pressure between the sealing spaces between the substrates is increased. After compressing and deforming the uncured sealing material so that one of the substrates is separated from any one chuck surface of the suction chuck, and after one of the substrates is separated from one chuck surface of the suction chuck, The suction pressure of any one of the suction chucks and the internal pressure of the variable pressure chamber are increased from the third degree of vacuum to the atmospheric pressure.

In the bonding device manufacturing method according to the present invention, the pair of suction chucks are provided in the transformation chamber so as to be relatively movable in a direction in which the pair of suction chucks are relatively close to each other. The substrates are superposed by the close movement of the suction chuck in the variable pressure chamber that is detachably held in a first vacuum degree so as to be sandwiched and depressurized to a second vacuum degree higher than the first vacuum degree. A sealing space surrounded by the sealing material is formed between them, and the substrate is made uniform evenly by the pressure difference generated between the internal pressure of the variable pressure chamber opened to the atmosphere and the sealing space. A manufacturing method of a bonding device that pressurizes and bonds with a predetermined gap, and after the substrates are superposed, the suction pressure of any one of the suction chucks against any one of the substrates The first vacuum degree at the time of stacking the substrates is raised to the second vacuum degree higher than the first vacuum degree, and the suction holding of one of the substrates due to the pressure difference is made equal to the internal pressure of the variable pressure chamber. After the pressure equalizing step and the pressure equalizing step, the suction pressure of any one of the suction chucks and the internal pressure of the variable pressure chamber are set to a pressure higher than the second vacuum degree and negative than atmospheric pressure. A pressure raising step for raising each to three vacuum degrees, and after the pressure raising process, maintaining the suction pressure of any one of the suction chucks and the internal pressure of the variable pressure chamber for a predetermined time while maintaining the third vacuum degree, a waiting step of the of the second vacuum between the substrates the uncured sealant at a pressure differential between the sealed space is compressed and deformed release one of the substrate from one of the suction chuck, said at the stand-by step From one side of the suction chuck After one of the substrates is separated, the internal pressure of the variable pressure chamber and the suction pressure of one of the suction chucks are increased from the third vacuum level to the atmospheric pressure, and the substrate is subjected to a pressure difference from the sealing space. And an atmosphere release step of bonding the substrate to a predetermined gap.

In the bonding device manufacturing apparatus and method according to the present invention having the above-described features, the suction pressure of one suction chuck with respect to one substrate after the pair of substrates are overlapped in the transformer chamber depressurized to the second vacuum degree. Is increased from the first degree of vacuum to the second degree of vacuum in the variable pressure chamber higher than that, so that the suction pressure of one suction chuck and the internal pressure of the variable pressure chamber become equal second degree of vacuum. The vacuum suction of one substrate due to the pressure difference from the chuck surface of the suction chuck is eliminated. Thereafter, the suction pressure of the internal pressure and one suction chuck of the transformer chamber, by increasing from the second vacuum to the third degree of vacuum negative pressure than and atmospheric pressure at a high pressure than a third transformer chamber The uncured sealing material is compressed and deformed by the pressure difference between the degree of vacuum and the sealing space of the second degree of vacuum between the substrates, and the surface of one substrate is separated from the chuck surface of one suction chuck. Thereafter, the internal pressure of the variable pressure chamber and the suction pressure of one of the suction chucks are increased from the third degree of vacuum to the atmospheric pressure, so that the substrate is bonded to the desired gap with a pressure difference.
Accordingly, by separating one suction chuck from one substrate in an overlapped state without affecting the uncured sealing material, bonding between the substrates without disturbing the shape of the sealing material is realized. be able to.
As a result, even if the height of the sealing material varies, the substrate can be bonded to the predetermined gap due to the pressure difference.
Furthermore, compared to the case where forced fluid such as compressed air is blown from the chuck surface to the surface of the substrate, uncured sealing material is not crushed excessively, and the coating pattern shape of the sealing material is disturbed. The separation of solid and liquid components such as filler contained in the sealing material, and the generation of air vibrations in the pipe line of one suction chuck or in the variable pressure chamber can be prevented, improving the bonding accuracy of the substrates. I can plan.

Is an explanatory diagram showing the overall configuration of an apparatus for manufacturing a laminated device according to the embodiment of the present invention, it is a longitudinal front view showing a suction state of the substrate that is transportable input. It is the same explanatory drawing, and is a vertical front view which shows the state of a superimposition process. It is the same explanatory drawing, and is a vertical front view which shows the state of a pressure equalization process. It is the same explanatory drawing, and is a vertical front view which shows the state at the time of completion | finish of a pressure equalization process. It is the same explanatory drawing, and is a vertical front view which shows the state of a pressure | voltage rise process. It is the same explanatory drawing and is a vertical front view which shows the state of an air release process. It is the same explanatory drawing, and is a vertical front view which shows the state at the time of carrying out a board | substrate. It is a time chart of the manufacturing method of the bonding device which concerns on embodiment of this invention. It is explanatory drawing which shows the whole structure of the manufacturing apparatus of the bonding device which concerns on the other Example of this invention, and is a longitudinal cross-sectional front view which shows the state of a pressure | voltage rise process. It is the same explanatory drawing and is a vertical front view which shows the state of an air release process. It is a time chart of the manufacturing method of the bonding device which concerns on the other Example of this invention. It is explanatory drawing which shows the example of application | coating of a sealing material, (a) is a front view before superimposition of a board | substrate, (b) is a front view in the middle of superimposition, (c) is a front view after superimposition.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
In the manufacturing apparatus B and the manufacturing method of the bonding device A according to the embodiment of the present invention, as shown in FIGS. 1 to 11, the pair of suction chucks 11 and 12 are relatively close to each other in the variable pressure chamber 10. First, the pair of substrates 1 and 2 is detachably attached to the suction chucks 11 and 12 so that the uncured sealing material 3 provided on either or both of them is sandwiched therebetween. It is sucked and held at a vacuum degree, superimposing the substrates 1 and 2 by the approach movement of the suction chuck 11, 12 with pressure-reduced transformer chamber 10 to the high-pressure second vacuum than the first vacuum. A sealed space 3 s surrounded by the sealing material 3 is formed between the superposed substrates 1 and 2, and a pressure difference generated between the internal pressure P <b> 2 released from the atmosphere of the variable pressure chamber 10 and the sealed space 3 s. Thus, the substrates 1 and 2 are pressed together uniformly and bonded together with a predetermined gap.
If it demonstrates in detail, as shown in FIGS. 2-8, FIG. 10, and FIG. 11, the manufacturing apparatus B of the bonding device A which concerns on embodiment of this invention will accommodate a pair of board | substrates 1 and 2 so that attachment or detachment is possible. A variable pressure chamber 10, a pair of suction chucks 11 and 12 provided so as to be detachably sucked and held so that the uncured sealing material 3 is sandwiched between the pair of substrates 1 and 2 in the variable pressure chamber 10, and the suction chuck 11 , 12 and a drive means 13 provided so as to relatively move in the Z direction, and a first suction pressure adjusting means 14 for adjusting the suction pressure of any one of the suction chucks 11, 12. A second suction pressure adjusting means 15 for adjusting the other suction pressure of the suction chucks 11 and 12, and a chamber pressure adjusting hand provided to adjust the pressure of the variable pressure chamber 10 from the atmospheric atmosphere to a predetermined vacuum pressure. 16 and a controller 17 for controlling the operation of the driving means 13, the first suction pressure adjusting means 14, the second suction pressure adjusting means 15, the chamber pressure adjusting means 16 and the like of the suction chucks 11 and 12, respectively. As an element.

The substrates 1 and 2 are thin plate-like structures in which a plurality of components such as an FPD and a sensor device are integrally assembled.
One substrate 1 constitutes an FPD, a sensor device, or the like by being bonded so as to cover the other substrate 2, such as a touch panel, a cover glass, or a cover film.
Further, as shown in FIGS. 1 to 7, 9, and 10, the substrates 1 and 2 are usually arranged in the Z direction (vertical direction), and the upper substrate 1 is hereinafter referred to as “upper substrate 1”. The lower substrate 2 is hereinafter referred to as “lower substrate 2”.

The sealing material 3 has an uncured or semi-cured fluidity that can be compressed and deformed, absorbs light energy such as ultraviolet rays, and cures as a result of polymerization, and exhibits a bonding property. A thermosetting adhesive, a two-component mixed curable adhesive, or the like that is cured by polymerization by absorption of thermal energy is used.
As a method for arranging the sealing material 3, before superposing the upper substrate 1 and the lower substrate 2, for example, a quantitative discharge nozzle such as a dispenser is used for one or both of the opposing surfaces of the upper substrate 1 and the lower substrate 2. In addition, it is preferably applied in a frame shape having a predetermined shape so that the sealing space 3s is partitioned and formed so as to be continuous at substantially the same height over the entire circumference surrounding the sealing space 3s. After the upper substrate 1 and the lower substrate 2 are bonded together, it is preferable to cure them by, for example, ultraviolet irradiation or heating. As another example, the sealing material 3 can be arranged by printing or the like.
As an example of the arrangement of the sealing material 3, as shown in FIGS. 1 to 7, 9, and 10, a plurality of sealing spaces 3 s are arranged at predetermined intervals with respect to the upper substrate 1 and the lower substrate 2. It is preferable to divide and use each sealed space 3s in a hermetically sealed device after the bonding.

The variable pressure chamber 10 is formed inside the chamber 10a. For example, the upper substrate 1 and the lower substrate 2 are connected to the outer space of the variable pressure chamber 10 and the chamber 10a in the chamber 10a by using transfer means (not shown) such as a transfer robot. The whole or part of the chamber 10a is configured to be openable and closable so that it can be taken in and out. More specifically, the upper substrate 1 and the lower substrate 2 are respectively carried into the variable pressure chamber 10 in the chamber 10a by the conveying means in the air atmosphere, and the bonding device A in which the bonding of the upper substrate 1 and the lower substrate 2 is completed is carried out. doing.
As a specific example of the chamber 10a, as shown in FIGS. 1 to 7, 9, and 10, a door 10b is provided in a part of the chamber 10a so that it can be opened and closed, so that the variable pressure chamber 10 can be opened and closed and sealed. It is configured to be a structure.
Although not shown as another example, the variable pressure chamber 10 can be freely opened and closed by dividing the chamber 10a in the Z direction and reciprocatingly moving closer to or away from the Z direction instead of the open / close door type. It is also possible to change the sealing structure.

Inside the chamber 10a, there are a holding member 11a having a suction chuck 11 on which the upper substrate 1 is detachably vacuum-sucked and a holding member 12a having a suction chuck 12 on which the lower substrate 2 is detachably vacuum-sucked, respectively. It is provided so as to be able to reciprocate in the Z direction.
The suction chuck 11 of the upper substrate 1 is hereinafter referred to as “upper suction chuck”, and the holding member 11a provided with the upper suction chuck 11 is hereinafter referred to as “upper holding member”. The suction chuck 12 of the lower substrate 2 is hereinafter referred to as a “lower suction chuck”, and the holding member 12a provided with the lower suction chuck 12 is hereinafter referred to as a “lower holding member”.
The upper holding member 11a and the lower holding member 12a are composed of a platen having a thickness that does not deform (bend) with a rigid body such as metal or ceramics, and the opposing surfaces thereof are respectively in the chamber 10a. They are arranged in parallel so as to face each other in the Z direction.
The upper suction chuck 11 is provided on the facing surface of the upper holding member 11a, and the lower suction chuck 12 is provided on the facing surface of the lower holding member 12a. Further, the opposing surfaces of the upper holding member 11a and the lower holding member 12a are attracted to fine holes and grooves that do not cause distortion in the upper substrate 1 and the lower substrate 2 by vacuum suction by the upper suction chuck 11 and the lower suction chuck 12. It has a structure.
In addition to the upper suction chuck 11 and the lower suction chuck 12, an adhesive chuck, an electrostatic chuck, or the like can be provided on the opposing surfaces of the upper holding member 11a and the lower holding member 12a as necessary.

Either the upper holding member 11a or the lower holding member 12a, or both the upper holding member 11a and the lower holding member 12a are supported so as to be movable in the Z direction with respect to the wall surface of the chamber 10a, and the driving means 13 is connected. Has been established.
The driving means 13 is composed of an actuator or the like, and when the upper substrate 1 and the lower substrate 2 are overlapped by the control unit 17 to be described later, one or both of the upper holding member 11a and the lower holding member 12a are moved in the Z direction. The operation is controlled to move relatively close.
Further, either one or both of the upper holding member 11a and the lower holding member 12a is provided with an alignment driving unit (not shown), and the upper holding member 11a and the lower holding member 12a are relatively moved in the XYθ direction. By moving, the upper substrate 1 and the lower substrate 2 are aligned.

The upper suction chuck 11 is provided with first suction pressure adjusting means 14 for adjusting the suction pressure P1 from the atmospheric atmosphere to a predetermined degree of vacuum.
As the first suction pressure adjusting means 14, an electropneumatic control type vacuum regulator or the like is used. As the process of systematically increasing the pressure from the vacuum pressure to the atmospheric pressure when the upper substrate 1 and the lower substrate 2 are overlaid, It is preferable to control the pressure increase rate during the pressure increase process from the vacuum pressure to the atmospheric pressure by setting the curve as a stepwise target pressure reduction value from one point to many points.
More specifically, the first suction pressure adjusting means 14 includes a first suction conduit 14b that communicates from the chuck surface of the upper suction chuck 11 to a suction source 14a such as a vacuum pump, and a first suction conduit 14b. And a first flow rate adjusting unit 14c provided in the middle.
The first flow rate adjusting unit 14c includes an on-off valve that opens and closes the first suction pipe 14b, a pressure regulator for adjusting the passing flow rate, and the like.
The lower suction chuck 12 is provided with second suction pressure adjusting means 15 for adjusting the suction pressure from the atmospheric atmosphere to a predetermined degree of vacuum.
The second suction pressure adjusting means 15 is provided in the middle of the second suction conduit 15b and the second suction conduit 15b communicating from the chuck surface of the lower suction chuck 12 toward the suction source 14a such as a vacuum pump, for example. And a second flow rate adjusting unit 15c.
The second flow rate adjusting unit 15c includes an opening / closing valve that opens and closes the second suction pipe line 15b.

As specific examples of the upper suction chuck 11 and the lower suction chuck 12, as shown in FIGS. 1 to 7, 9 and 10, the chuck surface of the upper suction chuck 11 after the upper substrate 1 and the lower substrate 2 are overlapped. The upper substrate 1 is configured to be separated by gravity.
Although not shown as another example, the lower substrate 2 can be separated from the chuck surface of the lower suction chuck 12 after the upper substrate 1 and the lower substrate 2 are overlapped.
Furthermore, the first suction pressure adjusting means 14 of the upper suction chuck 11 can be communicated with an exhaust pipe 16b of a chamber pressure adjusting means 16 described later via a communication pipe 14d. A pressure equalization adjusting unit 14e is provided in the middle of the communication pipeline 14d, and the pressure equalization adjusting unit 14e includes a pressure equalizing on / off valve that opens and closes the communication pipeline 14d.

The first suction pressure adjusting means 14 of the upper suction chuck 11 and the second suction pressure adjusting means 15 of the lower suction chuck 12 are respectively controlled by a control unit 17 to be described later, and the suction pressure P1 of the upper suction chuck 11 and the lower suction chuck 11 are controlled. The 12 suction pressures are set as follows.
When the upper substrate 1 and the lower substrate 2 are overlaid, the suction pressure P1 of the upper suction chuck 11 and the suction pressure of the lower suction chuck 12 are set to the first degree of vacuum, respectively. After superposition of the upper substrate 1 and lower substrate 2, the suction pressure P1 of the upper suction chuck 11, the high-pressure second vacuum than the first vacuum, and at a pressure higher than the second vacuum The pressure is set so that the pressure is increased stepwise from the third vacuum level to the atmospheric pressure to the third vacuum level lower than the atmospheric pressure.
The suction pressure of the lower suction chuck 12 is maintained at the first degree of vacuum until the bonding of the upper substrate 1 and the lower substrate 2 is completed and the bonding device A is unloaded from the variable pressure chamber 10, and immediately before unloading. It is set to boost pressure to atmospheric pressure at once.
As specific examples of the first degree of vacuum, the second degree of vacuum, and the third degree of vacuum, as shown in FIGS. 8 and 11, the first degree of vacuum is, for example, a high vacuum pressure of about 10,000 Pa or 10,000 Pa ( Hereinafter referred to as “high vacuum pressure”), the second vacuum degree is, for example, 50,000 Pa or a medium vacuum pressure around 50,000 Pa (hereinafter referred to as “medium vacuum pressure”), and the third vacuum degree is, for example, 70,000 Pa. Or a low vacuum pressure of about 70,000 Pa (hereinafter referred to as “low vacuum pressure”).
Here, the atmospheric pressure is about 100,000 Pa.

On the other hand, the chamber 10a is provided with a chamber pressure adjusting means 16 that communicates with the variable pressure chamber 10 and adjusts its internal pressure P2 from the atmospheric atmosphere to a predetermined degree of vacuum.
The chamber pressure adjusting means 16 has an exhaust passage 16b that communicates from the variable pressure chamber 10 to an exhaust source 16a such as a vacuum pump, and a chamber pressure adjusting portion 16c provided in the middle of the exhaust passage 16b.
The chamber pressure adjusting unit 16c includes an on-off valve that opens and closes the exhaust passage 16b, a pressure regulator for adjusting the passage flow rate, and the like. The chamber pressure adjusting unit 16c is controlled by a control unit 17 to be described later, and the internal pressure P2 of the variable pressure chamber 10 is set as follows. Is set.
In superposition when the upper substrate 1 and lower substrate 2, the internal pressure P2 of the transformer chamber 10 is set to a high-pressure second vacuum (medium vacuum pressure) than the first vacuum (high vacuum). After the upper substrate 1 and the lower substrate 2 are overlaid, the internal pressure P2 of the variable pressure chamber 10 is higher than the second vacuum level (medium vacuum pressure) and negative than the atmospheric pressure. ) To increase the pressure gradually to atmospheric pressure.

Further, the suction line 14 b of the upper suction chuck 11, the suction line 15 b of the lower suction chuck 12, and the exhaust path 16 b of the chamber pressure adjusting means 16 communicating with the variable pressure chamber 10 are supplied with negative pressure in the respective lines. It is preferable to provide a blow valve for opening to the atmosphere.
In the illustrated example, a blow valve 16d is disposed in the exhaust passage 16b of the variable pressure chamber 10 communicating with the suction conduit 14b of the upper suction chuck 11 via the communication conduit 14d, and the blow valve is provided in the suction conduit 15b of the lower suction chuck 12. 15d is arranged.

The control unit 17 includes a driving unit 13 for the suction chucks 11 and 12, a first flow rate adjusting unit 14 c and a pressure equalizing unit 14 e for the first suction pressure adjusting unit 14 for the upper suction chuck 11, and a second for the lower suction chuck 12. In addition to being electrically connected to the second flow rate adjusting unit 15c of the suction pressure adjusting unit 15, the chamber pressure adjusting unit 16c of the chamber pressure adjusting unit 16 of the variable pressure chamber 10, and the blow valves 16d and 15d, respectively, Conveying means for moving the upper substrate 1 and the lower substrate 2 in and out of the chamber 10, a positioning drive unit for moving the upper substrate 1 and the lower substrate 2 relative to each other in the XYθ direction, and a sealing material 3 are provided. It is a controller that is electrically connected to a curing means for curing.
The control of the first suction pressure adjusting means 14 of the upper suction chuck 11 by the control unit 17 is performed in the stepwise pressure increasing process from the vacuum pressure to the atmospheric pressure when the upper substrate 1 and the lower substrate 2 are overlapped. In order to detach the chuck surface from the surface of the upper substrate 1, detachment at a very low speed taking into account the equal pressure between the inside of the chuck surface and the internal pressure P2 of the variable pressure chamber 10 so that no negative pressure is generated in the detachment surface. It is preferable to perform control to start the process.
The controller serving as the controller 17 sequentially controls the operation at a preset timing in accordance with a preset program in its control circuit (not shown).
More specifically, the control unit 17 is configured so that the first suction pressure adjusting unit 14 selects one of the suction chucks 11 and 12 (upper suction) in a state where the substrates 1 and 2 are overlapped with the sealing member 3 by the driving unit 13. The suction pressure P1 of the chuck 11) is increased from the first degree of vacuum toward the second degree of vacuum of the variable pressure chamber 10 higher than that, and then the first suction pressure adjusting means 14 and the chamber pressure adjusting means 16 are used. The suction pressure P1 of one of the suction chucks 11 and 12 and the internal pressure P2 of the variable pressure chamber 10 are increased to a third vacuum level that is higher than the second vacuum level in the variable pressure chamber 10 and negative than the atmospheric pressure. Then, it is controlled to increase from the third degree of vacuum to the atmospheric pressure.

And the program set to the control circuit of the control part 17 is demonstrated as a manufacturing method for producing the bonding device A.
In the manufacturing method of the bonding device A according to the embodiment of the present invention, the upper substrate 1 and the lower substrate 2 are overlapped with each other, the upper suction chuck 11 or the lower suction chuck 12 (upper suction chuck 11). A pressure equalization step S2 in which the suction pressure P1 is increased from the first vacuum degree (high vacuum pressure) to the second vacuum degree (medium vacuum pressure), the internal pressure P2 of the variable pressure chamber 10 and the upper suction chuck 11 or the lower suction chuck. 12 (upper suction chuck 11) is increased to a third vacuum degree (low vacuum pressure), the pressure increasing step S4, the internal pressure P2 of the variable pressure chamber 10 and the upper suction chuck 11 or the lower suction chuck 12 An air release step S6 for raising the suction pressure P1 of either one (upper suction chuck 11) to atmospheric pressure is included as a main step.
In particular, in the boosting step S4, the internal pressure P2 of the variable pressure chamber 10 and the suction pressure P1 of either the upper suction chuck 11 or the lower suction chuck 12 (upper suction chuck 11) are changed from the second degree of vacuum (medium vacuum pressure) to the first. It is preferable to gradually increase it toward three vacuum degrees (low vacuum pressure).
The suction pressure of the other of the upper suction chuck 11 and the lower suction chuck 12 (the lower suction chuck 12) is the same in all steps from the superposition step S1 to the pressure equalization step S2, the pressure increase step S4, and the air release step S6. Maintains a degree of vacuum (high vacuum pressure).

In addition, a first standby step S3 for maintaining the suction pressure P1 of either the upper suction chuck 11 or the lower suction chuck 12 for a predetermined time between the pressure equalization step S2 and the pressure increase step S4. It can also be included.
Between the pressure increasing step S4 and the atmosphere releasing step S6, a second standby step for maintaining the internal pressure P2 of the variable pressure chamber 10 and the suction pressure P1 of either the upper suction chuck 11 or the lower suction chuck 12 for a predetermined time. Preferably, S5 is included.
That is, after raising the suction pressure P1 of either the upper suction chuck 11 or the lower suction chuck 12 and the internal pressure P2 of the variable pressure chamber 10 to the third vacuum level (low vacuum pressure), respectively, The vacuum pressure is preferably maintained for a predetermined time and then controlled to be increased from the third degree of vacuum (low vacuum pressure) to atmospheric pressure.

As a specific example of the manufacturing method of the bonding device A, first, as shown in FIG. 1, the upper substrate 1 and the lower substrate 2 are respectively externally directed toward the upper suction chuck 11 and the lower suction chuck 12 in the variable pressure chamber 10. It is carried in from. At this time, the upper suction chuck 11 and the lower suction chuck 12 are moved apart in the Z direction by the operation of the driving means 13.
The suction pressure P1 of the upper suction chuck 11 is adjusted to a first vacuum degree (high vacuum pressure) by a pressure regulator by opening an on-off valve serving as the first flow rate adjusting unit 14c of the first suction pressure adjusting means 14. The suction pressure of the lower suction chuck 12 is adjusted to the first degree of vacuum (high vacuum pressure) by opening an on-off valve serving as the second flow rate adjusting unit 15c of the second suction pressure adjusting means 15. As a result, the upper substrate 1 and the lower substrate 2 are sucked and held by the upper suction chuck 11 and the lower suction chuck 12 so as not to move at a first degree of vacuum (high vacuum pressure).
Further, after the variable pressure chamber 10 is hermetically sealed, the exhaust valve serving as the pressure adjusting portion 16c of the chamber pressure adjusting means 16 is opened, and the internal pressure P2 of the variable pressure chamber 10 is set to the first degree of vacuum (high vacuum pressure) by the pressure regulator. ) it is reduced to a pressure of the second vacuum (medium vacuum pressure) than. Therefore, the upper substrate 1 does not fall from the chuck surface of the upper suction chuck 11 and does not shift in the XY direction, and at the same time, the lower substrate 2 does not shift in the XY direction on the chuck surface of the lower suction chuck 12.

In the subsequent superposition step S1 shown in FIG. 2, the upper suction chuck 11 and the lower suction chuck 12 are moved to Z by the operation of the driving means 13 in the variable pressure chamber 10 reduced to the second vacuum degree (medium vacuum pressure). The upper substrate 1 and the lower substrate 2 are overlapped in the Z direction with the seal 3 interposed therebetween by relatively moving in the direction.
Thereby, a sealing space 3s surrounded by the sealing material 3 is formed between the upper substrate 1 and the lower substrate 2, and the pressure in the sealing space 3s becomes the second degree of vacuum (medium vacuum pressure).

In the subsequent pressure equalization step S2 shown in FIG. 3, the first suction pressure adjusting means 14 of the upper suction chuck 11 is kept open while the on-off valve serving as the first flow rate adjusting unit 14c of the upper suction chuck 11 is open. by the operation of the flow rate adjusting portion 14c, a suction pressure P1 on the suction chuck 11 on the substrate 1 is adsorbed, to the first vacuum pressure of the second vacuum than the (high vacuum pressure) (medium vacuum pressure) Raise.
At the end of the pressure equalization step S2, as shown in FIG. 4, the first suction pressure adjusting means 14 of the upper suction chuck 11 passes through the suction pipe 14b of the upper suction chuck 11 and the exhaust pipe 16b of the variable pressure chamber 10. It is preferable to control the communication line 14d to communicate with it.
As a result, the suction pressure P1 of the upper suction chuck 11 and the internal pressure P2 of the variable pressure chamber 10 are each equal to the second degree of vacuum (medium vacuum pressure). Therefore, at this time, the vacuum suction of the upper substrate 1 due to the pressure difference from the chuck surface of the upper suction chuck 11 is eliminated.
Further, in order to reliably eliminate the vacuum suction of the upper substrate 1, the suction pressure P1 of the upper suction chuck 11 and the internal pressure P2 of the variable pressure chamber 10 are set to a second degree of vacuum (medium) over a predetermined time by the first standby step S3. (Vacuum pressure) is preferably maintained.

In the subsequent boosting step S4 shown in FIG. 5, the internal pressure P2 of the variable pressure chamber 10 is changed from the second vacuum level (medium vacuum pressure) to a higher level by the pressure regulator serving as the pressure adjusting unit 16c of the chamber pressure adjusting means 16. The pressure is increased to a third degree of vacuum (low vacuum pressure) at a high pressure and a negative pressure from the atmospheric pressure.
At the same time, the suction pressure P1 of the upper suction chuck 11 is changed from the second vacuum degree (medium vacuum pressure) to the third by the operation of the first flow rate adjustment part 14c and the pressure equalization adjustment part 14e of the first suction pressure adjustment means 14. The vacuum level (low vacuum pressure) is increased.
As a specific example, in the case of the illustrated example, the first flow rate adjusting unit 14c of the upper suction chuck 11 is connected to the suction pipe 14b of the upper suction chuck 11 and the exhaust pipe 16b of the variable pressure chamber 10 through the communication pipe 14d. By communicating, the suction pressure P1 of the upper suction chuck 11 is controlled to increase to the third degree of vacuum (low vacuum pressure) at the same pressure in conjunction with the increase of the internal pressure P2 of the variable pressure chamber 10.
Although not shown as another example, the suction pressure P1 of the upper suction chuck 11 is changed to the internal pressure P2 of the variable pressure chamber 10 by the operation of the first flow rate adjusting unit 14c of the first suction pressure adjusting means 14 of the upper suction chuck 11. It is also possible to gradually increase to the third degree of vacuum (low vacuum pressure) almost simultaneously with the increase.

Since the internal pressure P2 of the variable pressure chamber 10 and the suction pressure P1 of the upper suction chuck 11 become the third degree of vacuum (low vacuum pressure) by the pressure increasing step S4, respectively, the third vacuum degree (low There is a pressure difference between the vacuum pressure) and the second degree of vacuum (medium vacuum pressure), which is the pressure in the sealing space 3 s surrounded by the sealing material 3 between the substrates 1 and 2.
Therefore, when the pressure increasing step S4 is finished, the uncured sealing material 3 is compressed and deformed by this pressure difference, and the surface of the upper substrate 1 starts to be detached from the chuck surface of the upper suction chuck 11.
At this time, the uncured sealing material is caused by the pressure difference between the third vacuum degree (low vacuum pressure) in the variable pressure chamber 10 and the sealing space 3 s of the second vacuum degree (medium vacuum pressure) between the substrates 1 and 2. 3 is sufficiently and reliably compressed and deformed, the internal pressure P2 of the variable pressure chamber 10 and the suction pressure P1 of the upper suction chuck 11 are set to the third degree of vacuum (low vacuum pressure) over a predetermined time in the second standby step S5. It is preferable to maintain.

In the subsequent air release step S6 shown in FIG. 6, the internal pressure P2 of the variable pressure chamber 10 is changed from the third degree of vacuum (low vacuum pressure) by the pressure regulator serving as the pressure adjusting unit 16c of the chamber pressure adjusting means 16. Also raise the pressure to high atmospheric pressure. At the same time, the suction pressure P1 of the upper suction chuck 11 is changed from the third degree of vacuum (low vacuum pressure) to the atmospheric pressure by the operation of the first flow rate adjustment unit 14c and the pressure equalization adjustment unit 14e of the first suction pressure adjusting means 14. It is raised to.
As a specific example, in the case of the illustrated example, the path from the suction line 14b of the upper suction chuck 11 to the suction source 14a is closed, and the suction pipe of the upper suction chuck 11 is connected by the pressure equalizing adjustment unit 14e via the communication line 14d. By connecting the passage 14b and the exhaust pipe 16b of the variable pressure chamber 10, the suction pressure P1 of the upper suction chuck 11 is controlled so as to gradually increase to the atmospheric pressure simultaneously with the increase of the internal pressure P2 of the variable pressure chamber 10. Yes.
Although not shown as another example, the suction pressure P1 of the upper suction chuck 11 is changed to the internal pressure P2 of the variable pressure chamber 10 by the operation of the first flow rate adjusting unit 14c of the first suction pressure adjusting means 14 of the upper suction chuck 11. It is also possible to gradually increase to atmospheric pressure almost simultaneously with the increase.

Since the internal pressure P2 of the variable pressure chamber 10 and the suction pressure P1 of the upper suction chuck 11 are each atmospheric pressure by the air release process S6, the atmospheric pressure which is the internal pressure P2 of the variable pressure chamber 10 and the substrates 1 and 2 are sealed. The pressure difference with the second degree of vacuum (medium vacuum pressure), which is the pressure in the space 3s, increases.
The uncured sealing material 3 is further compressed and deformed by the enlarged pressure difference, and the surface of the upper substrate 1 is completely separated from the chuck surface of the upper suction chuck 11, and the upper substrate 1 and the lower substrate 2 are generally uniform. To be bonded together with a desired gap.
When the internal pressure P2 of the variable pressure chamber 10 rises to atmospheric pressure or close to atmospheric pressure, the exhaust valve serving as the pressure adjusting portion 16c of the chamber pressure adjusting means 16 is closed, and the blower provided in the exhaust passage 16b of the variable pressure chamber 10 is closed. The valve 16 d is opened to release the pressure in the exhaust passage 16 b of the variable pressure chamber 10 and the suction conduit 14 b of the upper suction chuck 11.
At this time, as shown by a two-dot chain line in FIG. 6, the upper suction chuck 11 and the lower suction chuck 12 are moved relatively apart in the Z direction by the operation of the driving means 13, and the sealing material 3 is sandwiched therebetween. The combined upper substrate 1 and lower substrate 2 are sucked and held on the chuck surface of the lower suction chuck 12 so as not to move.

After the air release step S6, as shown in FIG. 7, the open / close valve serving as the flow rate adjusting unit 14e of the lower suction chuck 12 is closed, and the blow valve 15d provided in the suction line 14c of the lower suction chuck 12 is opened. Thus, the pressure in the suction line 14c of the lower suction chuck 12 is released.
In this state, the bonding device A in which the upper substrate 1 and the lower substrate 2 are bonded together with a desired gap is carried out from the inside of the variable pressure chamber 10 to the outside.
Thereafter, the above-described operation is repeated.

According to the manufacturing apparatus B and manufacturing method of the bonding device A according to such an embodiment of the present invention, as shown in FIG. 2, in the variable pressure chamber 10 reduced to the second degree of vacuum (medium vacuum pressure). After the superposition step S1 in which the pair of substrates 1 and 2 are superposed, the suction pressure of one suction chuck (upper suction chuck) 11 with respect to one substrate (upper substrate) 1 in the pressure equalization step S2 shown in FIG. P1 is raised from the first vacuum degree (high vacuum pressure) toward the second vacuum degree (medium vacuum pressure) of the variable pressure chamber 10 having a higher pressure. As a result, as shown in FIG. 4, the suction pressure P1 of one suction chuck (upper suction chuck) 11 and the internal pressure P2 of the variable pressure chamber 10 have an equal second degree of vacuum (medium vacuum pressure). The vacuum suction of one substrate (upper substrate) 1 due to the pressure difference from the chuck surface of the suction chuck (upper suction chuck) 11 is eliminated. In the subsequent step S4 shown in FIG. 5, the internal pressure P2 of the variable pressure chamber 10 and the suction pressure P1 of the one suction chuck (upper suction chuck) 11 are determined from the second degree of vacuum (medium vacuum pressure) in the variable pressure chamber 10. Is increased to a third degree of vacuum that is higher than the atmospheric pressure and negative. Thereby, the uncured sealing material 3 is caused by the pressure difference between the third vacuum degree (low vacuum pressure) in the variable pressure chamber 10 and the sealing space 3 s of the second vacuum degree (medium vacuum pressure) between the substrates 1 and 2. Is compressed and deformed, and the surface of one substrate (upper substrate) 1 is separated from the chuck surface of one suction chuck (upper suction chuck) 11. In the subsequent air release step S6 shown in FIG. 6, the internal pressure P2 of the variable pressure chamber 10 and the suction pressure P1 of one suction chuck (upper suction chuck) 11 are increased from the third degree of vacuum (low vacuum pressure) to the atmospheric pressure. Let

Explaining with a specific example, in the sealing space 3s sealed with the uncured sealing material 3 between the substrates 1 and 2 in the overlapping step S1, the medium vacuum pressure (50,000 Pa) in the variable pressure chamber 10 is obtained. ) Is trapped.
In the subsequent step S4, when the internal pressure P2 of the variable pressure chamber 10 is increased to a low vacuum pressure (70,000 Pa), an internal / external pressure difference (20,000 Pa) of the sealing material 3 with respect to the substrates 1 and 2 is inevitable. To occur.
In the subsequent air release step S6, an adhesive force of about 1000 g / cm ² of vacuum differential pressure is obtained at atmospheric pressure (100,000 Pa), and therefore about 200 g for the internal / external differential pressure of the sealing material 3 (20,000 Pa). An adhesion force of / cm ² is obtained.
Thereby, the uncured sealing material 3 is compressed and deformed in the thickness direction, and the thickness of the substrates 1 and 2 is reduced overall, so that the substrates 1 and 2 are bonded to a desired gap by a pressure difference. The
According to the experiment, on the upper substrate 1 and the lower substrate 2 before bonding, the variation in the coating height of the sealing material 3 is 60 μm on average, and the crushing dimension of the sealing material 3 by the driving means 13 in the overlapping step S1 is 10 μm. In this case, when the pressure is increased to a low vacuum pressure (70,000 Pa) at the end of the pressure increasing step S4, the seal material 3 is crushed by an average of 20 μm, and the gap between the upper substrate 1 and the lower substrate 2 is compressed and deformed to an average of 40 μm. did. Further, when the pressure is increased to atmospheric pressure (100,000 Pa) at the end of the air release step S6, the sealing material 3 is crushed by an average of 35 μm, and the gap between the upper substrate 1 and the lower substrate 2 is compressed and deformed to a target of 25 μm. It was. In the bonding device A thus produced, even if a differential pressure occurs between the sealing cell and the sealing cell 3, air penetration due to the differential pressure does not occur at the contact interface between the sealing material 3 and the upper substrate 1 and the lower substrate 2. It was confirmed that it was in a stable sealed state, and the object was achieved.

Therefore, the shape of the sealing material 3 is obtained by separating the one suction chuck (upper suction chuck) 11 from the one substrate (upper substrate) 1 in an overlapped state without any influence on the uncured sealing material 3. The substrates 1 and 2 can be bonded together without disturbing.
As a result, even if the height of the sealing material 3 varies, the substrates 1 and 2 can be bonded to the predetermined gap due to the pressure difference.
Furthermore, the uncured sealing material 3 is not excessively crushed and the application pattern shape of the sealing material 3 is compared to that in which a fluid such as compressed air is sprayed from the chuck surface to the surface of the substrate and forcedly separated. Turbulence, separation of solid and liquid components such as filler contained in the sealing material 3, and generation of air vibrations in the pipe line of one suction chuck (upper suction chuck) 11 or in the variable pressure chamber 10 can be prevented. Thus, the accuracy of bonding the substrates 1 and 2 can be improved.

In particular, after raising the suction pressure P1 of one suction chuck (upper suction chuck) 11 and the internal pressure P2 of the variable pressure chamber 10 to the third vacuum degree (low vacuum pressure), respectively, the third vacuum degree (low vacuum pressure) is increased. In the case where the pressure is maintained for a predetermined time and then controlled to be increased from the third degree of vacuum (low vacuum pressure) to the atmospheric pressure, the third degree of vacuum in the variable pressure chamber 10 ( The pressure difference between the low vacuum pressure) and the sealing space 3s of the second vacuum degree (medium vacuum pressure) between the substrates 1 and 2 is waited until the uncured sealing material 3 is sufficiently and reliably compressed and deformed. Thereby, even if the compression deformation speed of the uncured sealing material 3 is low, the compression deformation of the sealing material 3 proceeds and is completed during the standby step S5, and the chuck surface of one suction chuck (upper suction chuck) 11 is completed. The surface of one substrate (upper substrate) 1 is completely separated from
Accordingly, the one suction chuck (upper suction chuck) 11 can be more reliably separated from the one substrate (upper substrate) 1 in an overlapped state.
As a result, the separation performance of one suction chuck (upper suction chuck) 11 from one substrate (upper substrate) 1 is improved, and the bonding accuracy of the substrates 1 and 2 can be further improved.

Further, by the first suction pressure adjusting means 14 and the chamber pressure adjusting means 16, the suction pressure P1 of one of the suction chucks 11 and 12 and the internal pressure P2 of the variable pressure chamber 10 are changed from the second vacuum degree to the third vacuum degree. In the step-up step S4, the third vacuum degree (low vacuum pressure) in the variable pressure chamber 10 and the second vacuum degree (medium vacuum pressure) between the substrates 1 and 2 are controlled. Since the uncured sealing material 3 gradually compresses and deforms due to the pressure difference with the sealing space 3s, the surface of one substrate (upper substrate) 1 is moved from the chuck surface of one suction chuck (upper suction chuck) 11. Leave at a slow speed.
Therefore, the one suction chuck (upper suction chuck) 11 can be more reliably connected from one substrate (upper substrate) 1 without affecting the uncured sealing material 3 via the one substrate (upper substrate) 1 at all. Can be separated.
As a result, the separation performance of one suction chuck (upper suction chuck) 11 from one substrate (upper substrate) 1 is improved, and the bonding accuracy of the substrates 1 and 2 can be further improved.

Next, each embodiment of the present invention will be described with reference to the drawings.
In the first embodiment, as shown in FIGS. 4 and 8, at the end of the pressure equalization step S2, the first suction pressure adjusting means 14 of one suction chuck (upper suction chuck) 11 is replaced with one suction chuck ( The suction line 14b of the upper suction chuck) 11 and the exhaust line 16b of the variable pressure chamber 10 are controlled so as to communicate with each other through a communication line 14d.
In the example shown in FIG. 4, the on-off valve serving as the first flow rate adjusting unit 14c of the upper suction chuck 11 is closed to block the passage to the suction source 14a, and at the same time, the equalizing on-off valve serving as the pressure equalizing unit 14e is opened. As a result, the suction line 14b of the upper suction chuck 11 and the exhaust line 16b of the variable pressure chamber 10 are communicated with each other via the communication line 14d, and the pressure regulator serving as the pressure adjusting unit 16c of the chamber pressure adjusting means 16 is used to perform the third adjustment. The pressure is gradually increased to the degree of vacuum (low vacuum pressure).
As a result, the exhaust line 16b of the variable pressure chamber 10 communicates with the suction line 14b of the upper suction chuck 11 via the communication line 14d. Simultaneously with the rise of the internal pressure P2, it gradually rises to the third degree of vacuum (low vacuum pressure).

According to the manufacturing apparatus B and the manufacturing method of the bonding device A according to the first embodiment of the present invention, the suction pipe 14b of one suction chuck (upper suction chuck) 11 and the exhaust pipe 16b of the variable pressure chamber 10 are used. Even if a pressure sensor or the like is not provided for management control, the suction pipe 14b and the exhaust pipe 16b are communicated with each other through the communication pipe 14d, so that one suction chuck (upper suction chuck) passes through the communication pipe 14d. ) The suction pressure P1 of 11 and the internal pressure P2 of the variable pressure chamber 10 become equal second vacuum degrees (medium vacuum pressures), respectively. Therefore, the vacuum suction of one substrate (upper substrate) 1 due to the pressure difference from the chuck surface of one suction chuck (upper suction chuck) 11 is eliminated.
Therefore, one substrate (upper substrate) 1 can be reliably detached from one suction chuck (upper suction chuck) 11 with a simple structure and control.
As a result, there is an advantage that the separation performance of one suction chuck (upper suction chuck) 11 and one substrate (upper substrate) 1 can be improved at a low cost, and the bonding accuracy of the substrates 1 and 2 can be further improved. .
Furthermore, by using the chamber pressure adjusting means 16 for adjusting the pressure of the variable pressure chamber 10, the suction pressure P1 of one suction chuck (upper suction chuck) 11 can be adjusted simultaneously and accurately together with the internal pressure P2 of the variable pressure chamber 10. it can.
As a result, it is possible to precisely control the suction pressure P1 of one suction chuck (upper suction chuck) 11 and the internal pressure P2 of the variable pressure chamber 10 regardless of measurement errors of the pressure sensor or the like, and it is excellent in operability and economy. There is.

  In the second embodiment, as shown in FIGS. 9 to 11, at least in the atmosphere release step S <b> 6, instead of FIGS. 6 and 8 of the first embodiment, as shown in FIGS. 10 and 11, one suction chuck is used. A configuration in which the suction pressure P1 of the (upper suction chuck) 11 is controlled to be slightly higher than the internal pressure P2 of the variable pressure chamber 10 and increased from the third degree of vacuum (low vacuum pressure) to the atmospheric pressure is shown in FIGS. Unlike the first embodiment shown in FIG. 1, the other configuration is the same as that of the first embodiment shown in FIGS.

Further, in the second embodiment shown in FIG. 9 to FIG. 11, instead of FIG. 5 and FIG. 8 of the first embodiment in the boosting step S4, as shown in FIG. 9 and FIG. The suction pressure P1 of 11 is controlled to be slightly higher than the internal pressure P2 of the variable pressure chamber 10 from the second vacuum degree (medium vacuum pressure) to the third vacuum degree (low vacuum pressure).
Further, although not shown as another example, in the pressure increasing step S4, the suction pressure P1 of one suction chuck (upper suction chuck) 11 is set to the internal pressure P2 of the variable pressure chamber 10 in the same manner as in FIGS. It is also possible to control to increase to the third degree of vacuum (low vacuum pressure) with the same pressure in conjunction with the increase.

According to the manufacturing apparatus B and the manufacturing method of the bonding device A according to the second embodiment of the present invention, the increase in the suction pressure P1 of one suction chuck (upper suction chuck) 11 and the transformation in the atmosphere release step S6. Due to a slight pressure difference from the increase in the internal pressure P2 of the chamber 10, a small amount of air flows from the chuck surface of one suction chuck (upper suction chuck) 11 toward the surface of one substrate (upper substrate) 1, A gap between the chuck surface of the suction chuck (upper suction chuck) 11 and the surface of one substrate (upper substrate) 1 inevitably widens.
Therefore, from one suction chuck (upper suction chuck) 11 to one substrate (upper substrate) 1 without affecting the uncured sealing material 3 via one substrate (upper substrate) 1 by simple control. Can be more reliably separated.
As a result, the separation performance of one suction chuck (upper suction chuck) 11 from one substrate (upper substrate) 1 can be improved at a low cost, and the bonding accuracy of the substrates 1 and 2 can be further improved. is there.
Further, in the pressure increasing step S4 as in the illustrated example, the suction pressure P1 of one of the suction chucks (upper suction chuck) 11 is slightly higher than the internal pressure P2 of the variable pressure chamber 10 from the second vacuum degree (medium vacuum pressure). When control is performed so as to increase to three vacuum degrees (low vacuum pressure), in the pressure increasing step S4, the suction pressure P1 of one suction chuck (upper suction chuck) 11 is increased and the internal pressure P2 of the variable pressure chamber 10 is increased. Due to a slight pressure difference from the chuck surface, a small amount of air flows from the chuck surface of one suction chuck (upper suction chuck) 11 to the surface of one substrate (upper substrate) 1, and one suction chuck (upper suction chuck). The gap between the 11 chuck surfaces and the surface of one substrate (upper substrate) 1 inevitably widens.
Therefore, in the case of the illustrated example, when proceeding to the boosting step S4, the surface of one substrate (upper substrate) 1 starts to be detached from the chuck surface of one suction chuck (upper suction chuck) 11.
Therefore, there is an advantage that one substrate (upper substrate) 1 can be more easily and reliably separated from one suction chuck (upper suction chuck) 11 than the first embodiment shown in FIGS. .

  In the illustrated example, both the suction chucks 11 and 12 are moved relatively close to each other in the Z direction by the driving unit 13 to superimpose the substrates 1 and 2. However, the present invention is not limited to this. The substrates 1 and 2 may be overlapped by moving one of 12 close to the other.

A bonding device 1 substrate (upper substrate)
2 Substrate (lower substrate) 3 Sealing material 3s Sealing space B Manufacturing equipment 10 Transformer chamber 11 Suction chuck (upper suction chuck)
12 suction chuck (lower suction chuck) 13 driving means 14 first suction pressure adjusting means 14b suction conduit 14d connecting conduit 15 second suction pressure adjusting means 16 chamber pressure adjusting means 16b exhaust conduit 17 controller P1 one suction chuck Suction pressure P2 Inner pressure in the transformer chamber S2 Pressure equalization process S4 Pressure increase process S6 Atmospheric release process

Claims (5)

A pair of substrates are overlapped in the reduced pressure chamber, and a sealed space surrounded by an uncured sealing material is formed between them. Between the internal pressure of the variable pressure chamber opened to the atmosphere and the sealed space. Due to the generated pressure difference, the substrate is a manufacturing apparatus of a bonding device that pressurizes the substrate uniformly and bonds it with a predetermined gap,
The variable pressure chamber in which the substrate is accommodated freely;
A pair of suction chucks that are detachably attached and held at a first degree of vacuum so that the sealing material is sandwiched in the transformer chamber;
Driving means for superimposing the substrates by relatively moving either one or both of the suction chucks in the Z direction in the variable pressure chamber reduced in pressure to a second degree of vacuum higher than the first degree of vacuum; ,
First suction pressure adjusting means for adjusting the suction pressure of any one of the suction chucks;
Second suction pressure adjusting means for adjusting the other suction pressure of the suction chuck;
Chamber pressure adjusting means for adjusting the internal pressure of the variable pressure chamber from an atmospheric atmosphere to a predetermined vacuum pressure;
A controller for controlling the operation of the driving means, the first suction pressure adjusting means, the second suction pressure adjusting means, and the chamber pressure adjusting means,
The controller is configured such that the substrate is overlapped in the transformation chamber having the second degree of vacuum by the driving unit, and the sealing space surrounded by the uncured sealing material is formed between the substrates. The first suction pressure adjusting means causes the suction pressure of any one of the suction chucks to be higher than the first vacuum degree when the substrates are superposed, and to be equal to the internal pressure of the variable pressure chamber. After that, the first suction pressure adjusting means and the chamber pressure adjusting means increase the suction pressure of one of the suction chucks and the internal pressure of the variable pressure chamber from the second vacuum degree to a higher pressure than that. In addition, the vacuum is raised to a third vacuum level that is a negative pressure from the atmospheric pressure, and then maintained at the third vacuum level for a predetermined time, and the suction is performed by the pressure difference between the substrates and the sealing space. One of the chucks The uncured sealing material is compressed and deformed so that one of the substrates is separated from the chuck surface, and after one of the substrates is separated from one chuck surface of the suction chuck, the suction pressure of one of the suction chucks And the internal pressure of the variable pressure chamber is increased from the third degree of vacuum to the atmospheric pressure.   By the first suction pressure adjusting means and the chamber pressure adjusting means, the suction pressure of any one of the suction chucks and the internal pressure of the variable pressure chamber are gradually increased from the second vacuum degree to the third vacuum degree. It controls so that it may raise, The manufacturing apparatus of the bonding device of Claim 1 characterized by the above-mentioned. The first suction pressure adjusting means, according to claim 1, wherein the controller controls the exhaust line of the variable pressure chamber either with one of the suction conduit of the suction chuck so as to communicate with the communication pipe line Manufacturing device for pasting devices. The sticking pressure according to claim 1 or 2 , wherein the suction pressure of any one of the suction chucks is controlled to be slightly higher than the internal pressure of the variable pressure chamber and increased from the third degree of vacuum to the atmospheric pressure. Combined device manufacturing equipment. A pair of suction chucks are movably provided in the transformer chamber so as to be relatively close to each other, and the pair of substrates are detachably attached to the suction chucks so that an uncured sealing material is sandwiched between them. The substrate is superposed by the close movement of the suction chuck in the variable pressure chamber that has been sucked and held and reduced to a second degree of vacuum higher than the first degree of vacuum, and is surrounded by the sealing material therebetween. A bonding device in which a sealed space is formed, and the substrate is uniformly pressed and bonded at a predetermined gap by a pressure difference generated between the internal pressure of the variable pressure chamber opened to the atmosphere and the sealed space. A manufacturing method of
After the superposition of the substrates, the suction pressure of any one of the suction chucks with respect to any one of the substrates is increased from the first vacuum degree during the superposition of the substrates to the second vacuum degree higher than that. And equalizing the internal pressure of the variable pressure chamber and canceling the adsorption holding of one of the substrates due to a pressure difference; and
After the pressure equalization step, the suction pressure of any one of the suction chucks and the internal pressure of the variable pressure chamber are increased to a third vacuum level that is higher than the second vacuum level and negative than atmospheric pressure. Boosting step,
After the boosting step, the suction pressure of any one of the suction chucks and the internal pressure of the variable pressure chamber are maintained at the third vacuum degree for a predetermined time, and the sealing of the second vacuum degree between the substrates is performed. A standby step in which one of the substrates is separated from one of the suction chucks by compressing and deforming the uncured sealing material due to a pressure difference with a stop space;
After one of the substrates is separated from one of the suction chucks in the standby step , the internal pressure of the variable pressure chamber and the suction pressure of one of the suction chucks are increased from the third vacuum degree to the atmospheric pressure, And an atmosphere opening step of bonding the substrate to a predetermined gap with a pressure difference from the sealing space.

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