JP5689575B2 - 青色発光半導体ナノクリスタル物質 - Google Patents

青色発光半導体ナノクリスタル物質 Download PDF

Info

Publication number
JP5689575B2
JP5689575B2 JP2007502908A JP2007502908A JP5689575B2 JP 5689575 B2 JP5689575 B2 JP 5689575B2 JP 2007502908 A JP2007502908 A JP 2007502908A JP 2007502908 A JP2007502908 A JP 2007502908A JP 5689575 B2 JP5689575 B2 JP 5689575B2
Authority
JP
Japan
Prior art keywords
nanocrystal
nanocrystals
core
blue light
cds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2007502908A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007528612A (ja
JP2007528612A5 (https=
Inventor
ステケル ジョナサン
ステケル ジョナサン
ピー ジムメル ジョフン
ピー ジムメル ジョフン
コエ−スルリバン セス
コエ−スルリバン セス
イー ストット ナサン
イー ストット ナサン
ブロビク ブラディミル
ブロビク ブラディミル
ジー バウエンディ モウンギ
ジー バウエンディ モウンギ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
Original Assignee
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Publication of JP2007528612A publication Critical patent/JP2007528612A/ja
Publication of JP2007528612A5 publication Critical patent/JP2007528612A5/ja
Application granted granted Critical
Publication of JP5689575B2 publication Critical patent/JP5689575B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C01G9/08—Sulfides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G11/00—Compounds of cadmium
    • C01G11/02—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C09K11/565—Chalcogenides with zinc cadmium
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • C01P2004/82—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases
    • C01P2004/84—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases one phase coated with the other
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Luminescent Compositions (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)
JP2007502908A 2004-03-08 2005-03-07 青色発光半導体ナノクリスタル物質 Expired - Lifetime JP5689575B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US55031404P 2004-03-08 2004-03-08
US60/550,314 2004-03-08
US11/071,244 US7253452B2 (en) 2004-03-08 2005-03-04 Blue light emitting semiconductor nanocrystal materials
US11/071,244 2005-03-04
PCT/US2005/007454 WO2005086782A2 (en) 2004-03-08 2005-03-07 Blue light emitting semiconductor nanocrystal materials

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012248191A Division JP2013064141A (ja) 2004-03-08 2012-11-12 青色発光半導体ナノクリスタル物質

Publications (3)

Publication Number Publication Date
JP2007528612A JP2007528612A (ja) 2007-10-11
JP2007528612A5 JP2007528612A5 (https=) 2008-04-10
JP5689575B2 true JP5689575B2 (ja) 2015-03-25

Family

ID=34976141

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007502908A Expired - Lifetime JP5689575B2 (ja) 2004-03-08 2005-03-07 青色発光半導体ナノクリスタル物質
JP2012248191A Pending JP2013064141A (ja) 2004-03-08 2012-11-12 青色発光半導体ナノクリスタル物質

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012248191A Pending JP2013064141A (ja) 2004-03-08 2012-11-12 青色発光半導体ナノクリスタル物質

Country Status (6)

Country Link
US (3) US7253452B2 (https=)
EP (1) EP1730783A4 (https=)
JP (2) JP5689575B2 (https=)
KR (1) KR101178410B1 (https=)
CN (1) CN101208808B (https=)
WO (1) WO2005086782A2 (https=)

Families Citing this family (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2336409B1 (en) 2002-08-13 2023-05-10 Massachusetts Institute of Technology Coated nanocrystal and method of preparing a coated nanocrystal
AU2003296014B2 (en) 2002-11-26 2010-06-03 University Of Maryland Biotechnology Institute High-sensitivity assays for pathogen detection using metal-enhanced fluorescence
US7253452B2 (en) * 2004-03-08 2007-08-07 Massachusetts Institute Of Technology Blue light emitting semiconductor nanocrystal materials
US7746681B2 (en) 2005-01-07 2010-06-29 Invisage Technologies, Inc. Methods of making quantum dot films
US7326908B2 (en) 2004-04-19 2008-02-05 Edward Sargent Optically-regulated optical emission using colloidal quantum dot nanocrystals
US7773404B2 (en) 2005-01-07 2010-08-10 Invisage Technologies, Inc. Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
US7742322B2 (en) 2005-01-07 2010-06-22 Invisage Technologies, Inc. Electronic and optoelectronic devices with quantum dot films
US20050258419A1 (en) * 2004-05-05 2005-11-24 California Institute Of Technology System and method for making nanoparticles with controlled emission properties
US20060196375A1 (en) * 2004-10-22 2006-09-07 Seth Coe-Sullivan Method and system for transferring a patterned material
US7649196B2 (en) 2004-11-03 2010-01-19 Massachusetts Institute Of Technology Light emitting device
WO2007018570A2 (en) * 2004-11-03 2007-02-15 Massachusetts Institute Of Technology Absorbing film
US8075956B2 (en) * 2004-11-05 2011-12-13 University Of Maryland, Baltimore County Metal-enhanced fluorescence from plastic substrates
EP1666562B1 (en) * 2004-11-11 2018-03-07 Samsung Electronics Co., Ltd. Interfused nanocrystals and method of preparing the same
US9637682B2 (en) 2004-11-11 2017-05-02 Samsung Electronics Co., Ltd. Interfused nanocrystals and method of preparing the same
EP1825249B1 (en) * 2004-11-19 2015-12-30 University Of Maryland Biotechnology Institute Microwave accelerated assays
US8891575B2 (en) * 2004-11-30 2014-11-18 Massachusetts Institute Of Technology Optical feedback structures and methods of making
US8886464B2 (en) 2005-01-03 2014-11-11 University Of Maryland, Baltimore County Microwave-accelerated metal-enhanced detection method
CA2519608A1 (en) 2005-01-07 2006-07-07 Edward Sargent Quantum dot-polymer nanocomposite photodetectors and photovoltaics
PL2546192T3 (pl) 2005-02-16 2020-05-18 Massachusetts Institute Of Technology Urządzenie emitujące światło, zawierające nanokryształy półprzewodnikowe
US9297092B2 (en) * 2005-06-05 2016-03-29 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
US8845927B2 (en) * 2006-06-02 2014-09-30 Qd Vision, Inc. Functionalized nanoparticles and method
US8718437B2 (en) 2006-03-07 2014-05-06 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
EP1915610A4 (en) 2005-06-15 2010-05-19 Univ Maryland Biotech Inst BIOASSAYS WITH PLASMONIC SPREADING OF PRECIOUS METAL NANOSTRUCTURES
EP1896832A4 (en) 2005-06-17 2011-12-14 Univ Maryland Biotech Inst METAL-REINFORCED MEASURING METHODS AT FLUORESCENT BASIS
ATE525655T1 (de) * 2005-08-02 2011-10-15 Univ Maryland Nanostrukturen zur polarisierten abbildung und rezeptor-/liganden-quantifizierung: überschreitung der diffraktionsgrenze für abbildungen
US8835941B2 (en) * 2006-02-09 2014-09-16 Qd Vision, Inc. Displays including semiconductor nanocrystals and methods of making same
WO2007095061A2 (en) * 2006-02-09 2007-08-23 Qd Vision, Inc. Device including semiconductor nanocrystals and a layer including a doped organic material and methods
US8008067B2 (en) * 2006-02-13 2011-08-30 University Of Maryland, Baltimore County Microwave trigger metal-enhanced chemiluminescence (MT MEC) and spatial and temporal control of same
KR20080103527A (ko) 2006-02-14 2008-11-27 메사츄세츠 인스티튜트 어브 테크놀로지 백색 발광 장치들
WO2007143197A2 (en) 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
WO2008070028A2 (en) * 2006-12-01 2008-06-12 Qd Vision, Inc. Improved composites and devices including nanoparticles
US8849087B2 (en) 2006-03-07 2014-09-30 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
US9874674B2 (en) 2006-03-07 2018-01-23 Samsung Electronics Co., Ltd. Compositions, optical component, system including an optical component, devices, and other products
EP2041478B1 (en) 2006-03-07 2014-08-06 QD Vision, Inc. An article including semiconductor nanocrystals
WO2007117698A2 (en) 2006-04-07 2007-10-18 Qd Vision, Inc. Composition including material, methods of depositing material, articles including same and systems for depositing material
US7807265B2 (en) * 2006-05-12 2010-10-05 University Of Central Florida Research Foundation, Inc. Partially passivated quantum dots, process for making, and sensors therefrom
US8980179B2 (en) * 2006-05-17 2015-03-17 University Of Maryland, Baltimore County Angular-dependent metal-enhanced fluorescence
US8941299B2 (en) * 2006-05-21 2015-01-27 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US9212056B2 (en) * 2006-06-02 2015-12-15 Qd Vision, Inc. Nanoparticle including multi-functional ligand and method
WO2007143227A2 (en) * 2006-06-10 2007-12-13 Qd Vision, Inc. Materials,thin films,optical filters, and devices including same
WO2008108798A2 (en) 2006-06-24 2008-09-12 Qd Vision, Inc. Methods for depositing nanomaterial, methods for fabricating a device, and methods for fabricating an array of devices
WO2008105792A2 (en) 2006-06-24 2008-09-04 Qd Vision, Inc. Methods for depositing nanomaterial, methods for fabricating a device, methods for fabricating an array of devices and compositions
WO2008111947A1 (en) 2006-06-24 2008-09-18 Qd Vision, Inc. Methods and articles including nanomaterial
US8643058B2 (en) 2006-07-31 2014-02-04 Massachusetts Institute Of Technology Electro-optical device including nanocrystals
US9505978B2 (en) 2006-08-11 2016-11-29 Massachusetts Institute Of Technology Blue light emitting semiconductor nanocrystals and devices
JP2010508620A (ja) 2006-09-12 2010-03-18 キユーデイー・ビジヨン・インコーポレーテツド 所定のパターンを表示するために有用なエレクトロルミネセントディスプレイ
WO2008033388A2 (en) * 2006-09-12 2008-03-20 Qd Vision, Inc. A composite including nanoparticles, methods, and products including a composite
WO2008063658A2 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063652A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
WO2008063653A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063657A2 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Light emitting devices and displays with improved performance
WO2008133660A2 (en) * 2006-11-21 2008-11-06 Qd Vision, Inc. Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts
US8836212B2 (en) 2007-01-11 2014-09-16 Qd Vision, Inc. Light emissive printed article printed with quantum dot ink
US9339485B2 (en) * 2007-03-02 2016-05-17 University Of Maryland, Baltimore County Plasmonic engineering of singlet oxygen and/or superoxide generation
WO2008121793A1 (en) * 2007-03-30 2008-10-09 The Penn State Research Foundation Mist fabrication of quantum dot devices
EP2165184A1 (en) 2007-06-04 2010-03-24 University Of Maryland Biotechnology Institute Fluorescence microscope in a microwave cavity
WO2009014590A2 (en) 2007-06-25 2009-01-29 Qd Vision, Inc. Compositions and methods including depositing nanomaterial
WO2009002551A1 (en) * 2007-06-26 2008-12-31 Qd Vision, Inc. Photovoltaic devices including quantum dot down-conversion materials useful for solar cells and materials including quantum dots
US9023372B2 (en) * 2007-07-18 2015-05-05 University Of Maryland Metal-enhanced fluorescence nanoparticles
WO2009014707A2 (en) 2007-07-23 2009-01-29 Qd Vision, Inc. Quantum dot light enhancement substrate and lighting device including same
US8128249B2 (en) 2007-08-28 2012-03-06 Qd Vision, Inc. Apparatus for selectively backlighting a material
WO2009148634A2 (en) * 2008-01-30 2009-12-10 University Of Maryland Biotechnology Institute Conversion of just-continuous metallic films to large particulate substrates for metal-enhanced fluorescence
WO2009099425A2 (en) * 2008-02-07 2009-08-13 Qd Vision, Inc. Flexible devices including semiconductor nanocrystals, arrays, and methods
CN102016553A (zh) 2008-03-03 2011-04-13 马里兰大学,巴尔的摩县 电压门控的金属增强荧光、化学发光或生物发光方法及系统
KR101995369B1 (ko) 2008-04-03 2019-07-02 삼성 리서치 아메리카 인코포레이티드 양자점들을 포함하는 발광 소자
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
WO2009151515A1 (en) 2008-05-06 2009-12-17 Qd Vision, Inc. Solid state lighting devices including quantum confined semiconductor nanoparticles
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
US20110062430A1 (en) * 2008-06-02 2011-03-17 Van Veggel Franciscus Cornelis Jacobus Maria Blue light emitting nanomaterials and synthesis thereof
WO2010030828A2 (en) 2008-09-11 2010-03-18 University Of Maryland Biotechnology Institute Sonication-assisted metal-enhanced fluorescence (samef)-based bioassays
EP2344866B1 (en) 2008-09-17 2019-09-04 University of Maryland, Baltimore County Plasmonic electricity
WO2010096414A2 (en) 2009-02-17 2010-08-26 University Of Maryland Biotechnology Institute Metal-enhanced bioluminescence: an approach for monitoring biological bioluminescent processes
EP2399117A4 (en) 2009-02-23 2012-08-08 Univ Maryland DIRECTIVE SURFACE PLASMONES-COUPLED FLUORESCENCE AND CHEMILUMINESCENCE OF NICKEL, IRON OR PALLADIUM THIN FILMS AND THEIR USE
KR101753740B1 (ko) 2009-04-28 2017-07-04 삼성전자주식회사 광학 재료, 광학 부품 및 방법
US8536776B2 (en) * 2009-05-07 2013-09-17 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
WO2010129889A2 (en) 2009-05-07 2010-11-11 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US8106420B2 (en) 2009-06-05 2012-01-31 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
KR101869923B1 (ko) 2009-08-14 2018-07-20 삼성전자주식회사 조명 장치, 조명 장치용 광학 요소, 및 방법
WO2011047385A1 (en) 2009-10-17 2011-04-21 Qd Vision, Inc. An optical, component, products including same, and methods for making same
WO2011060180A1 (en) 2009-11-11 2011-05-19 Qd Vision, Inc. Device including quantum dots
JP5715154B2 (ja) 2009-12-14 2015-05-07 ユニバーシティ オブ メリーランド，ボルチモア カウンティ プラズモン電気
WO2011084671A2 (en) 2009-12-17 2011-07-14 University Of Maryland, Baltimore County Mixed-metal substrates for metal-enhanced fluorescence
JP6312433B2 (ja) 2010-05-27 2018-04-18 メルク パテント ゲーエムベーハー フォトルミネセント化合物を備えるアレイを具備する装置
DK2659029T3 (en) 2010-12-28 2018-04-16 Life Technologies Corp NANO CRYSTALS WITH MIXTURES OF ORGANIC LIGANDS
US8735175B2 (en) 2011-03-18 2014-05-27 Chris D. Geddes Multicolor microwave-accelerated metal-enhanced fluorescence (M-MAMEF)
WO2013019299A2 (en) 2011-05-11 2013-02-07 Qd Vision, Inc. Method for processing devices including quantum dots and devices
US8508830B1 (en) 2011-05-13 2013-08-13 Google Inc. Quantum dot near-to-eye display
WO2012158832A2 (en) 2011-05-16 2012-11-22 Qd Vision, Inc. Method for preparing semiconductor nanocrystals
WO2013028253A1 (en) 2011-08-19 2013-02-28 Qd Vision, Inc. Semiconductor nanocrystals and methods
CN102403426B (zh) * 2011-12-09 2014-08-13 江苏康纳思光电科技有限公司 一种制造宽色域白光led的方法
WO2013103440A1 (en) 2012-01-06 2013-07-11 Qd Vision, Inc. Light emitting device including blue emitting quantum dots and method
WO2013123390A1 (en) * 2012-02-16 2013-08-22 Qd Vision, Inc. Method for preparing semiconductor nanocrystals
US10807865B2 (en) * 2012-03-15 2020-10-20 Massachusetts Institute Of Technology Semiconductor nanocrystals
WO2013173409A1 (en) 2012-05-15 2013-11-21 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
WO2014085469A1 (en) * 2012-11-27 2014-06-05 Massachusetts Institute Of Technology Deposition of semiconductor nanocrystals for light emitting devices
JP6314981B2 (ja) * 2013-06-25 2018-04-25 コニカミノルタ株式会社 光学材料、光学フィルム及び発光デバイス
US10294451B2 (en) 2015-04-22 2019-05-21 University Of Maryland, Baltimore County Flow and static lysing systems and methods for ultra-rapid isolation and fragmentation of biological materials by microwave irradiation
GB201705755D0 (en) * 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure
KR102601649B1 (ko) 2018-07-23 2023-11-13 삼성전자주식회사 양자점, 그 제조 방법, 이를 포함한 복합체 및 전자 소자
JP7195943B2 (ja) * 2019-01-15 2022-12-26 株式会社アルバック 金属窒化物ナノ粒子分散液の製造方法
US10456776B1 (en) * 2019-02-21 2019-10-29 King Saud University Method of fabricating a photocatalyst for water splitting

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5147841A (en) 1990-11-23 1992-09-15 The United States Of America As Represented By The United States Department Of Energy Method for the preparation of metal colloids in inverse micelles and product preferred by the method
TW239158B (https=) * 1991-02-15 1995-01-21 Lubrizol Corp
US5505928A (en) 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
WO1993010564A1 (en) * 1991-11-22 1993-05-27 The Regents Of The University Of California Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers
US5262357A (en) 1991-11-22 1993-11-16 The Regents Of The University Of California Low temperature thin films formed from nanocrystal precursors
US5515393A (en) 1992-01-29 1996-05-07 Sony Corporation Semiconductor laser with ZnMgSSe cladding layers
CN1025526C (zh) * 1992-12-15 1994-07-20 中国科学院上海技术物理研究所 一种蓝绿色半导体激光器材料及其制备方法
US5293050A (en) 1993-03-25 1994-03-08 International Business Machines Corporation Semiconductor quantum dot light emitting/detecting devices
US6048616A (en) 1993-04-21 2000-04-11 Philips Electronics N.A. Corp. Encapsulated quantum sized doped semiconductor particles and method of manufacturing same
JPH0750448A (ja) 1993-08-04 1995-02-21 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
US5492080A (en) 1993-12-27 1996-02-20 Matsushita Electric Industrial Co., Ltd. Crystal-growth method and semiconductor device production method using the crystal-growth method
US5422489A (en) 1994-01-24 1995-06-06 Bhargava; Rameshwar N. Light emitting device
US5448582A (en) 1994-03-18 1995-09-05 Brown University Research Foundation Optical sources having a strongly scattering gain medium providing laser-like action
US5434878A (en) 1994-03-18 1995-07-18 Brown University Research Foundation Optical gain medium having doped nanocrystals of semiconductors and also optical scatterers
SE504244C2 (sv) * 1994-03-29 1996-12-16 Sandvik Ab Sätt att tillverka kompositmaterial av hårdämnen i en metallbindefas
US5537000A (en) 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
US5677545A (en) 1994-09-12 1997-10-14 Motorola Organic light emitting diodes with molecular alignment and method of fabrication
US5541948A (en) 1994-11-28 1996-07-30 The Regents Of The University Of California Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers
US5985353A (en) 1994-12-01 1999-11-16 University Of Massachusetts Lowell Biomolecular synthesis of quantum dot composites
US5585640A (en) 1995-01-11 1996-12-17 Huston; Alan L. Glass matrix doped with activated luminescent nanocrystalline particles
US5606163A (en) 1995-01-11 1997-02-25 The United States Of America As Represented By The Secretary Of The Navy All-optical, rapid readout, fiber-coupled thermoluminescent dosimeter system
US5747180A (en) 1995-05-19 1998-05-05 University Of Notre Dame Du Lac Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
GB9518910D0 (en) 1995-09-15 1995-11-15 Imperial College Process
US5876480A (en) 1996-02-20 1999-03-02 The United States Of America As Represented By The Secretary Of The Navy Synthesis of unagglomerated metal nano-particles at membrane interfaces
DE19630581A1 (de) 1996-07-30 1998-02-05 Studiengesellschaft Kohle Mbh Verfahren zur Herstellung von Solvens-stabilisierten Metallkolloiden und trägerfixierten Metallclustern
US5908608A (en) 1996-11-08 1999-06-01 Spectra Science Corporation Synthesis of metal chalcogenide quantum
US6103868A (en) 1996-12-27 2000-08-15 The Regents Of The University Of California Organically-functionalized monodisperse nanocrystals of metals
JP4099547B2 (ja) 1997-01-23 2008-06-11 ソニー株式会社 ディジタル信号編集装置及び方法
US6057561A (en) 1997-03-07 2000-05-02 Japan Science And Technology Corporation Optical semiconductor element
JP4071360B2 (ja) 1997-08-29 2008-04-02 株式会社東芝 半導体装置
US6607829B1 (en) 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US5985173A (en) 1997-11-18 1999-11-16 Gray; Henry F. Phosphors having a semiconductor host surrounded by a shell
US5990479A (en) 1997-11-25 1999-11-23 Regents Of The University Of California Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6501091B1 (en) 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
US6337117B1 (en) 1998-07-01 2002-01-08 Mitsubishi Chemical Corporation Optical memory device
JP4470237B2 (ja) * 1998-07-23 2010-06-02 ソニー株式会社 発光素子，発光装置および表示装置並びに発光素子の製造方法
US6262129B1 (en) 1998-07-31 2001-07-17 International Business Machines Corporation Method for producing nanoparticles of transition metals
US6294401B1 (en) 1998-08-19 2001-09-25 Massachusetts Institute Of Technology Nanoparticle-based electrical, chemical, and mechanical structures and methods of making same
US6306610B1 (en) 1998-09-18 2001-10-23 Massachusetts Institute Of Technology Biological applications of quantum dots
US6251303B1 (en) 1998-09-18 2001-06-26 Massachusetts Institute Of Technology Water-soluble fluorescent nanocrystals
US6114038A (en) 1998-11-10 2000-09-05 Biocrystal Ltd. Functionalized nanocrystals and their use in detection systems
AU1717600A (en) 1998-11-10 2000-05-29 Biocrystal Limited Methods for identification and verification
US6592842B2 (en) 1999-10-01 2003-07-15 Battelle Memorial Institute Nanocrystalline heterojunction materials
US6179912B1 (en) 1999-12-20 2001-01-30 Biocrystal Ltd. Continuous flow process for production of semiconductor nanocrystals
US6819692B2 (en) 2000-03-14 2004-11-16 Massachusetts Institute Of Technology Optical amplifiers and lasers
JP4537528B2 (ja) 2000-03-29 2010-09-01 株式会社東芝 光記録媒体
ATE491230T1 (de) 2000-10-04 2010-12-15 Univ Arkansas Synthese von kolloidalen metall chalcogenide nanokristallen
US6576291B2 (en) * 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
US20020083888A1 (en) 2000-12-28 2002-07-04 Zehnder Donald A. Flow synthesis of quantum dot nanocrystals
US6846565B2 (en) 2001-07-02 2005-01-25 Board Of Regents, The University Of Texas System Light-emitting nanoparticles and method of making same
EP1409240B1 (en) * 2001-07-20 2012-05-09 Life Technologies Corporation Luminescent nanoparticles and methods for their preparation
CA2454355C (en) * 2001-07-30 2011-05-10 The Board Of Trustees Of The University Of Arkansas High quality colloidal nanocrystals and methods of preparing the same in non-coordinating solvents
US6794265B2 (en) * 2001-08-02 2004-09-21 Ultradots, Inc. Methods of forming quantum dots of Group IV semiconductor materials
KR100438408B1 (ko) 2001-08-16 2004-07-02 한국과학기술원 금속간의 치환 반응을 이용한 코어-쉘 구조 및 혼합된합금 구조의 금속 나노 입자의 제조 방법과 그 응용
JP2003073449A (ja) * 2001-08-31 2003-03-12 Hitachi Chem Co Ltd プリプレグ用変性エポキシ樹脂組成物、それを用いるプリプレグおよび積層板
EP1430549A2 (en) 2001-09-04 2004-06-23 Koninklijke Philips Electronics N.V. Electroluminescent device comprising quantum dots
AU2002326920B2 (en) * 2001-09-17 2007-09-13 Massachusetts Institute Of Technology Semiconductor nanocrystal composite
JP3709379B2 (ja) * 2002-03-26 2005-10-26 新日本石油株式会社 潤滑油組成物
CN1656856B (zh) * 2002-03-29 2013-07-17 麻省理工学院 包含半导体纳米晶体的发光器件
US7901939B2 (en) * 2002-05-09 2011-03-08 University Of Chicago Method for performing crystallization and reactions in pressure-driven fluid plugs
US7319709B2 (en) * 2002-07-23 2008-01-15 Massachusetts Institute Of Technology Creating photon atoms
US6872450B2 (en) 2002-10-23 2005-03-29 Evident Technologies Water-stable photoluminescent semiconductor nanocrystal complexes and method of making same
US7056471B1 (en) 2002-12-16 2006-06-06 Agency For Science Technology & Research Ternary and quarternary nanocrystals, processes for their production and uses thereof
US20040265622A1 (en) 2003-06-24 2004-12-30 Eastman Kodak Company Light emitting display
KR100657891B1 (ko) 2003-07-19 2006-12-14 삼성전자주식회사 반도체 나노결정 및 그 제조방법
US7253452B2 (en) * 2004-03-08 2007-08-07 Massachusetts Institute Of Technology Blue light emitting semiconductor nanocrystal materials

Also Published As

Publication number Publication date
CN101208808A (zh) 2008-06-25
US20120061644A1 (en) 2012-03-15
US8541810B2 (en) 2013-09-24
EP1730783A2 (en) 2006-12-13
JP2007528612A (ja) 2007-10-11
JP2013064141A (ja) 2013-04-11
CN101208808B (zh) 2010-09-29
KR20070003916A (ko) 2007-01-05
EP1730783A4 (en) 2010-12-01
WO2005086782A2 (en) 2005-09-22
US20050258418A1 (en) 2005-11-24
US20110229998A1 (en) 2011-09-22
WO2005086782A3 (en) 2008-01-03
US8080437B2 (en) 2011-12-20
US7253452B2 (en) 2007-08-07
KR101178410B1 (ko) 2012-08-30

Similar Documents

Publication Publication Date Title
JP5689575B2 (ja) 青色発光半導体ナノクリスタル物質
JP2007528612A5 (https=)
JP7308433B2 (ja) 半導体ナノ粒子およびその製造方法ならびに発光デバイス
KR102367208B1 (ko) 두꺼운 쉘 코팅을 갖는 안정된 inp 양자점 및 그 제조 방법
JP7070826B2 (ja) 半導体ナノ粒子およびその製造方法ならびに発光デバイス
JP4931348B2 (ja) 半導体ナノクリスタルヘテロ構造体
CN101365828B (zh) 纳米颗粒
EP3405550B1 (en) Method of producing inp quantum dots with gap and alp shells
EP3922604A1 (en) Semiconductor nanoparticles and method for producing same
EP3929965A1 (en) Stabilized nanocrystals
JP2020152904A (ja) 半導体ナノ粒子及びその製造方法、並びに発光デバイス
US10807865B2 (en) Semiconductor nanocrystals
WO2011088159A1 (en) Optoelectronic device containing large-sized emitting colloidal nanocrystals
Choi Synthesis and characterization of GaP quantum dots and their application as color converters in LEDs

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080222

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080222

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110125

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110222

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110513

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110520

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110819

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111213

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120301

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120308

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120717

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121112

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121112

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20121119

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20130118

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130611

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130614

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140130

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140204

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140507

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140829

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140904

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141202

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150129

R150 Certificate of patent or registration of utility model

Ref document number: 5689575

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term