KR101178410B1 - 청색 발광 반도체 나노결정 물질 - Google Patents

청색 발광 반도체 나노결정 물질 Download PDF

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KR101178410B1
KR101178410B1 KR1020067018383A KR20067018383A KR101178410B1 KR 101178410 B1 KR101178410 B1 KR 101178410B1 KR 1020067018383 A KR1020067018383 A KR 1020067018383A KR 20067018383 A KR20067018383 A KR 20067018383A KR 101178410 B1 KR101178410 B1 KR 101178410B1
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nanocrystals
blue light
population
nanocrystal
core
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KR20070003916A (ko
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조나단 에스. 스테컬
존 피. 짐머
세스 코이-설리반
나단 이. 스토트
블라디미르 블로비치
마운기 지. 바웬디
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매사추세츠 인스티튜트 오브 테크놀로지
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C01G9/08—Sulfides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G11/00—Compounds of cadmium
    • C01G11/02—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C09K11/565—Chalcogenides with zinc cadmium
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • C01P2004/82—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases
    • C01P2004/84—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases one phase coated with the other
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Luminescent Compositions (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)
KR1020067018383A 2004-03-08 2005-03-07 청색 발광 반도체 나노결정 물질 Expired - Lifetime KR101178410B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US55031404P 2004-03-08 2004-03-08
US60/550,314 2004-03-08
US11/071,244 US7253452B2 (en) 2004-03-08 2005-03-04 Blue light emitting semiconductor nanocrystal materials
US11/071,244 2005-03-04
PCT/US2005/007454 WO2005086782A2 (en) 2004-03-08 2005-03-07 Blue light emitting semiconductor nanocrystal materials

Publications (2)

Publication Number Publication Date
KR20070003916A KR20070003916A (ko) 2007-01-05
KR101178410B1 true KR101178410B1 (ko) 2012-08-30

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Country Status (6)

Country Link
US (3) US7253452B2 (https=)
EP (1) EP1730783A4 (https=)
JP (2) JP5689575B2 (https=)
KR (1) KR101178410B1 (https=)
CN (1) CN101208808B (https=)
WO (1) WO2005086782A2 (https=)

Families Citing this family (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004053929A2 (en) 2002-08-13 2004-06-24 Massachusetts Institute Of Technology Semiconductor nanocrystal heterostructures
AU2003296014B2 (en) 2002-11-26 2010-06-03 University Of Maryland Biotechnology Institute High-sensitivity assays for pathogen detection using metal-enhanced fluorescence
US7253452B2 (en) * 2004-03-08 2007-08-07 Massachusetts Institute Of Technology Blue light emitting semiconductor nanocrystal materials
US7773404B2 (en) 2005-01-07 2010-08-10 Invisage Technologies, Inc. Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
US7326908B2 (en) 2004-04-19 2008-02-05 Edward Sargent Optically-regulated optical emission using colloidal quantum dot nanocrystals
US7742322B2 (en) 2005-01-07 2010-06-22 Invisage Technologies, Inc. Electronic and optoelectronic devices with quantum dot films
US7746681B2 (en) 2005-01-07 2010-06-29 Invisage Technologies, Inc. Methods of making quantum dot films
US20050258419A1 (en) * 2004-05-05 2005-11-24 California Institute Of Technology System and method for making nanoparticles with controlled emission properties
US10225906B2 (en) * 2004-10-22 2019-03-05 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
WO2006137924A2 (en) 2004-11-03 2006-12-28 Massachusetts Institute Of Technology Light emitting device
US7799422B2 (en) * 2004-11-03 2010-09-21 Massachusetts Institute Of Technology Absorbing film
CA2628056C (en) * 2004-11-05 2013-05-28 University Of Maryland Biotechnology Institute Metal-enhanced fluorescence from plastic substrates
US9637682B2 (en) 2004-11-11 2017-05-02 Samsung Electronics Co., Ltd. Interfused nanocrystals and method of preparing the same
EP2292718A3 (en) * 2004-11-11 2011-06-22 Samsung Electronics Co., Ltd Interfused nanocrystals and method of preparing the same
US8034633B2 (en) 2004-11-19 2011-10-11 University Of Maryland, Baltimore County Microwave accelerated assays
US8891575B2 (en) * 2004-11-30 2014-11-18 Massachusetts Institute Of Technology Optical feedback structures and methods of making
US8886464B2 (en) 2005-01-03 2014-11-11 University Of Maryland, Baltimore County Microwave-accelerated metal-enhanced detection method
CA2519608A1 (en) 2005-01-07 2006-07-07 Edward Sargent Quantum dot-polymer nanocomposite photodetectors and photovoltaics
EP1864341B1 (en) 2005-02-16 2019-11-13 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US8718437B2 (en) 2006-03-07 2014-05-06 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
WO2007103310A2 (en) 2006-03-07 2007-09-13 Qd Vision, Inc. An article including semiconductor nanocrystals
US8845927B2 (en) * 2006-06-02 2014-09-30 Qd Vision, Inc. Functionalized nanoparticles and method
US9297092B2 (en) * 2005-06-05 2016-03-29 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
CA2655079C (en) 2005-06-15 2013-12-10 University Of Maryland Biotechnology Institute Bioassays using plasmonic scattering from noble metal nanostructures
EP1896832A4 (en) 2005-06-17 2011-12-14 Univ Maryland Biotech Inst METAL-REINFORCED MEASURING METHODS AT FLUORESCENT BASIS
US8987004B2 (en) * 2005-08-02 2015-03-24 University Of Maryland, Baltimore County Nanostructures for polarized imaging and receptor/ligan quantization: breaking the diffraction limit for imaging
US8835941B2 (en) * 2006-02-09 2014-09-16 Qd Vision, Inc. Displays including semiconductor nanocrystals and methods of making same
WO2007095061A2 (en) * 2006-02-09 2007-08-23 Qd Vision, Inc. Device including semiconductor nanocrystals and a layer including a doped organic material and methods
US8008067B2 (en) * 2006-02-13 2011-08-30 University Of Maryland, Baltimore County Microwave trigger metal-enhanced chemiluminescence (MT MEC) and spatial and temporal control of same
EP1989725B1 (en) 2006-02-14 2019-06-05 Massachusetts Institute of Technology White light emitting devices
US8849087B2 (en) 2006-03-07 2014-09-30 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
WO2008070028A2 (en) * 2006-12-01 2008-06-12 Qd Vision, Inc. Improved composites and devices including nanoparticles
WO2007143197A2 (en) 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
US9874674B2 (en) 2006-03-07 2018-01-23 Samsung Electronics Co., Ltd. Compositions, optical component, system including an optical component, devices, and other products
WO2007117698A2 (en) * 2006-04-07 2007-10-18 Qd Vision, Inc. Composition including material, methods of depositing material, articles including same and systems for depositing material
US7807265B2 (en) * 2006-05-12 2010-10-05 University Of Central Florida Research Foundation, Inc. Partially passivated quantum dots, process for making, and sensors therefrom
US8980179B2 (en) * 2006-05-17 2015-03-17 University Of Maryland, Baltimore County Angular-dependent metal-enhanced fluorescence
US8941299B2 (en) * 2006-05-21 2015-01-27 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US9212056B2 (en) * 2006-06-02 2015-12-15 Qd Vision, Inc. Nanoparticle including multi-functional ligand and method
WO2007143227A2 (en) * 2006-06-10 2007-12-13 Qd Vision, Inc. Materials,thin films,optical filters, and devices including same
WO2008111947A1 (en) 2006-06-24 2008-09-18 Qd Vision, Inc. Methods and articles including nanomaterial
WO2008108798A2 (en) 2006-06-24 2008-09-12 Qd Vision, Inc. Methods for depositing nanomaterial, methods for fabricating a device, and methods for fabricating an array of devices
WO2008105792A2 (en) 2006-06-24 2008-09-04 Qd Vision, Inc. Methods for depositing nanomaterial, methods for fabricating a device, methods for fabricating an array of devices and compositions
US8643058B2 (en) * 2006-07-31 2014-02-04 Massachusetts Institute Of Technology Electro-optical device including nanocrystals
WO2008021962A2 (en) 2006-08-11 2008-02-21 Massachusetts Institute Of Technology Blue light emitting semiconductor nanocrystals and devices
WO2008033388A2 (en) * 2006-09-12 2008-03-20 Qd Vision, Inc. A composite including nanoparticles, methods, and products including a composite
WO2008085210A2 (en) 2006-09-12 2008-07-17 Qd Vision, Inc. Electroluminescent display useful for displaying a predetermined pattern
WO2008063653A1 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008133660A2 (en) 2006-11-21 2008-11-06 Qd Vision, Inc. Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts
WO2008063658A2 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063652A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
WO2008063657A2 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Light emitting devices and displays with improved performance
US8836212B2 (en) 2007-01-11 2014-09-16 Qd Vision, Inc. Light emissive printed article printed with quantum dot ink
US9339485B2 (en) * 2007-03-02 2016-05-17 University Of Maryland, Baltimore County Plasmonic engineering of singlet oxygen and/or superoxide generation
WO2008121793A1 (en) * 2007-03-30 2008-10-09 The Penn State Research Foundation Mist fabrication of quantum dot devices
CA2724933A1 (en) * 2007-06-04 2008-12-11 University Of Maryland, Baltimore County Fluorescence microscope in a microwave cavity
KR101672553B1 (ko) 2007-06-25 2016-11-03 큐디 비젼, 인크. 조성물 및 나노물질의 침착을 포함하는 방법
WO2009002551A1 (en) * 2007-06-26 2008-12-31 Qd Vision, Inc. Photovoltaic devices including quantum dot down-conversion materials useful for solar cells and materials including quantum dots
US9023372B2 (en) * 2007-07-18 2015-05-05 University Of Maryland Metal-enhanced fluorescence nanoparticles
WO2009014707A2 (en) 2007-07-23 2009-01-29 Qd Vision, Inc. Quantum dot light enhancement substrate and lighting device including same
US8128249B2 (en) 2007-08-28 2012-03-06 Qd Vision, Inc. Apparatus for selectively backlighting a material
WO2009148634A2 (en) * 2008-01-30 2009-12-10 University Of Maryland Biotechnology Institute Conversion of just-continuous metallic films to large particulate substrates for metal-enhanced fluorescence
WO2009099425A2 (en) * 2008-02-07 2009-08-13 Qd Vision, Inc. Flexible devices including semiconductor nanocrystals, arrays, and methods
EP2257790B1 (en) 2008-03-03 2016-12-07 University Of Maryland Baltimore County Voltage-gated metal-enhanced fluorescence, chemiluminescence or bioluminescence methods and systems
CN102047098B (zh) 2008-04-03 2016-05-04 Qd视光有限公司 包括量子点的发光器件
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
WO2009151515A1 (en) 2008-05-06 2009-12-17 Qd Vision, Inc. Solid state lighting devices including quantum confined semiconductor nanoparticles
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
WO2009149015A2 (en) * 2008-06-02 2009-12-10 University Of Victoria Innovation And Development Corporation Blue light emitting nanomaterials and synthesis thereof
CA2737048A1 (en) 2008-09-11 2011-03-18 University Of Maryland, Baltimore County Sonication-assisted metal-enhanced fluorescence (samef)-based bioassays
WO2010033677A2 (en) 2008-09-17 2010-03-25 University Of Maryland Biotechnology Institute Plasmonic electricity
US10024850B2 (en) 2009-02-17 2018-07-17 University Of Maryland, Baltimore County Metal-enhanced bioluminescence: an approach for monitoring biological bioluminescent processes
WO2010096204A2 (en) 2009-02-23 2010-08-26 University Of Maryland Biotechnology Institute Directional surface plasmon coupled fluorescence and chemiluminescence from thin films of nickel, iron or palladium and uses thereof
JP5710597B2 (ja) 2009-04-28 2015-04-30 キユーデイー・ビジヨン・インコーポレーテツド 光学材料、光学部品および方法
US8536776B2 (en) * 2009-05-07 2013-09-17 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US9574134B2 (en) * 2009-05-07 2017-02-21 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US8106420B2 (en) * 2009-06-05 2012-01-31 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
KR20120062773A (ko) 2009-08-14 2012-06-14 큐디 비젼, 인크. 조명 장치, 조명 장치용 광학 요소, 및 방법
WO2011047385A1 (en) 2009-10-17 2011-04-21 Qd Vision, Inc. An optical, component, products including same, and methods for making same
KR101924080B1 (ko) 2009-11-11 2018-11-30 삼성 리서치 아메리카 인코포레이티드 양자점을 포함하는 디바이스
WO2011081896A2 (en) 2009-12-14 2011-07-07 University Of Maryland, Baltimore County Plasmonic electricity
EP2513630B1 (en) 2009-12-17 2016-05-25 Chris Geddes A detection system using mixed-metal substrates for metal-enhanced fluorescence
EP2577734B1 (en) 2010-05-27 2019-11-13 Merck Patent GmbH Down conversion
CN103384595B (zh) 2010-12-28 2016-08-10 生命科技公司 具有高消光系数的纳米晶体以及这种纳米晶体的制备和使用方法
US8735175B2 (en) 2011-03-18 2014-05-27 Chris D. Geddes Multicolor microwave-accelerated metal-enhanced fluorescence (M-MAMEF)
WO2013019299A2 (en) 2011-05-11 2013-02-07 Qd Vision, Inc. Method for processing devices including quantum dots and devices
US8508830B1 (en) 2011-05-13 2013-08-13 Google Inc. Quantum dot near-to-eye display
WO2012158832A2 (en) 2011-05-16 2012-11-22 Qd Vision, Inc. Method for preparing semiconductor nanocrystals
WO2013028253A1 (en) 2011-08-19 2013-02-28 Qd Vision, Inc. Semiconductor nanocrystals and methods
CN102403426B (zh) * 2011-12-09 2014-08-13 江苏康纳思光电科技有限公司 一种制造宽色域白光led的方法
WO2013103440A1 (en) 2012-01-06 2013-07-11 Qd Vision, Inc. Light emitting device including blue emitting quantum dots and method
WO2013123390A1 (en) * 2012-02-16 2013-08-22 Qd Vision, Inc. Method for preparing semiconductor nanocrystals
US10807865B2 (en) * 2012-03-15 2020-10-20 Massachusetts Institute Of Technology Semiconductor nanocrystals
WO2013173409A1 (en) 2012-05-15 2013-11-21 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
WO2014085469A1 (en) * 2012-11-27 2014-06-05 Massachusetts Institute Of Technology Deposition of semiconductor nanocrystals for light emitting devices
WO2014208456A1 (ja) * 2013-06-25 2014-12-31 コニカミノルタ株式会社 光学材料、光学フィルム及び発光デバイス
US10294451B2 (en) 2015-04-22 2019-05-21 University Of Maryland, Baltimore County Flow and static lysing systems and methods for ultra-rapid isolation and fragmentation of biological materials by microwave irradiation
GB201705755D0 (en) * 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure
KR102601649B1 (ko) 2018-07-23 2023-11-13 삼성전자주식회사 양자점, 그 제조 방법, 이를 포함한 복합체 및 전자 소자
JP7195943B2 (ja) * 2019-01-15 2022-12-26 株式会社アルバック 金属窒化物ナノ粒子分散液の製造方法
US10456776B1 (en) * 2019-02-21 2019-10-29 King Saud University Method of fabricating a photocatalyst for water splitting

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999026299A1 (en) 1997-11-13 1999-05-27 Massachusetts Institute Of Technology Highly luminescent color-selective materials

Family Cites Families (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5147841A (en) 1990-11-23 1992-09-15 The United States Of America As Represented By The United States Department Of Energy Method for the preparation of metal colloids in inverse micelles and product preferred by the method
TW239158B (https=) * 1991-02-15 1995-01-21 Lubrizol Corp
US5262357A (en) 1991-11-22 1993-11-16 The Regents Of The University Of California Low temperature thin films formed from nanocrystal precursors
WO1993010564A1 (en) * 1991-11-22 1993-05-27 The Regents Of The University Of California Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers
US5505928A (en) 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
US5515393A (en) 1992-01-29 1996-05-07 Sony Corporation Semiconductor laser with ZnMgSSe cladding layers
CN1025526C (zh) * 1992-12-15 1994-07-20 中国科学院上海技术物理研究所 一种蓝绿色半导体激光器材料及其制备方法
US5293050A (en) 1993-03-25 1994-03-08 International Business Machines Corporation Semiconductor quantum dot light emitting/detecting devices
US6048616A (en) 1993-04-21 2000-04-11 Philips Electronics N.A. Corp. Encapsulated quantum sized doped semiconductor particles and method of manufacturing same
JPH0750448A (ja) 1993-08-04 1995-02-21 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
US5492080A (en) 1993-12-27 1996-02-20 Matsushita Electric Industrial Co., Ltd. Crystal-growth method and semiconductor device production method using the crystal-growth method
US5422489A (en) 1994-01-24 1995-06-06 Bhargava; Rameshwar N. Light emitting device
US5434878A (en) 1994-03-18 1995-07-18 Brown University Research Foundation Optical gain medium having doped nanocrystals of semiconductors and also optical scatterers
US5448582A (en) 1994-03-18 1995-09-05 Brown University Research Foundation Optical sources having a strongly scattering gain medium providing laser-like action
SE504244C2 (sv) * 1994-03-29 1996-12-16 Sandvik Ab Sätt att tillverka kompositmaterial av hårdämnen i en metallbindefas
US5537000A (en) 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
US5677545A (en) 1994-09-12 1997-10-14 Motorola Organic light emitting diodes with molecular alignment and method of fabrication
US5541948A (en) 1994-11-28 1996-07-30 The Regents Of The University Of California Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers
US5985353A (en) 1994-12-01 1999-11-16 University Of Massachusetts Lowell Biomolecular synthesis of quantum dot composites
US5585640A (en) 1995-01-11 1996-12-17 Huston; Alan L. Glass matrix doped with activated luminescent nanocrystalline particles
US5606163A (en) 1995-01-11 1997-02-25 The United States Of America As Represented By The Secretary Of The Navy All-optical, rapid readout, fiber-coupled thermoluminescent dosimeter system
US5747180A (en) 1995-05-19 1998-05-05 University Of Notre Dame Du Lac Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
GB9518910D0 (en) 1995-09-15 1995-11-15 Imperial College Process
US5876480A (en) 1996-02-20 1999-03-02 The United States Of America As Represented By The Secretary Of The Navy Synthesis of unagglomerated metal nano-particles at membrane interfaces
DE19630581A1 (de) 1996-07-30 1998-02-05 Studiengesellschaft Kohle Mbh Verfahren zur Herstellung von Solvens-stabilisierten Metallkolloiden und trägerfixierten Metallclustern
US5908608A (en) 1996-11-08 1999-06-01 Spectra Science Corporation Synthesis of metal chalcogenide quantum
US6103868A (en) 1996-12-27 2000-08-15 The Regents Of The University Of California Organically-functionalized monodisperse nanocrystals of metals
JP4099547B2 (ja) 1997-01-23 2008-06-11 ソニー株式会社 ディジタル信号編集装置及び方法
US6057561A (en) 1997-03-07 2000-05-02 Japan Science And Technology Corporation Optical semiconductor element
JP4071360B2 (ja) 1997-08-29 2008-04-02 株式会社東芝 半導体装置
US6607829B1 (en) 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US5985173A (en) 1997-11-18 1999-11-16 Gray; Henry F. Phosphors having a semiconductor host surrounded by a shell
US5990479A (en) 1997-11-25 1999-11-23 Regents Of The University Of California Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6501091B1 (en) 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
US6337117B1 (en) 1998-07-01 2002-01-08 Mitsubishi Chemical Corporation Optical memory device
JP4470237B2 (ja) * 1998-07-23 2010-06-02 ソニー株式会社 発光素子，発光装置および表示装置並びに発光素子の製造方法
US6262129B1 (en) 1998-07-31 2001-07-17 International Business Machines Corporation Method for producing nanoparticles of transition metals
US6294401B1 (en) 1998-08-19 2001-09-25 Massachusetts Institute Of Technology Nanoparticle-based electrical, chemical, and mechanical structures and methods of making same
US6306610B1 (en) 1998-09-18 2001-10-23 Massachusetts Institute Of Technology Biological applications of quantum dots
US6251303B1 (en) 1998-09-18 2001-06-26 Massachusetts Institute Of Technology Water-soluble fluorescent nanocrystals
US6114038A (en) 1998-11-10 2000-09-05 Biocrystal Ltd. Functionalized nanocrystals and their use in detection systems
WO2000028598A1 (en) 1998-11-10 2000-05-18 Biocrystal Limited Methods for identification and verification
US6592842B2 (en) 1999-10-01 2003-07-15 Battelle Memorial Institute Nanocrystalline heterojunction materials
US6179912B1 (en) 1999-12-20 2001-01-30 Biocrystal Ltd. Continuous flow process for production of semiconductor nanocrystals
HK1049923A1 (zh) 2000-03-14 2003-05-30 Massachusetts Institute Of Technology 光学放大镜及激光器
JP4537528B2 (ja) 2000-03-29 2010-09-01 株式会社東芝 光記録媒体
JP2004510678A (ja) 2000-10-04 2004-04-08 ザ　ボード　オブ　トラスティーズ　オブ　ザ　ユニバーシティ　オブ　アーカンソー コロイドナノ結晶の合成
US6576291B2 (en) 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
US20020083888A1 (en) 2000-12-28 2002-07-04 Zehnder Donald A. Flow synthesis of quantum dot nanocrystals
US6846565B2 (en) 2001-07-02 2005-01-25 Board Of Regents, The University Of Texas System Light-emitting nanoparticles and method of making same
JP4567436B2 (ja) 2001-07-20 2010-10-20 ライフ テクノロジーズ コーポレーション 発光ナノ粒子およびそれらの調製方法
DE60235306D1 (de) * 2001-07-30 2010-03-25 Univ Arkansas Verfahren zur herstellung von kolloidale nanokrist
US6794265B2 (en) * 2001-08-02 2004-09-21 Ultradots, Inc. Methods of forming quantum dots of Group IV semiconductor materials
KR100438408B1 (ko) 2001-08-16 2004-07-02 한국과학기술원 금속간의 치환 반응을 이용한 코어-쉘 구조 및 혼합된합금 구조의 금속 나노 입자의 제조 방법과 그 응용
JP2003073449A (ja) * 2001-08-31 2003-03-12 Hitachi Chem Co Ltd プリプレグ用変性エポキシ樹脂組成物、それを用いるプリプレグおよび積層板
WO2003021694A2 (en) 2001-09-04 2003-03-13 Koninklijke Philips Electronics N.V. Electroluminescent device comprising quantum dots
CA2460796C (en) * 2001-09-17 2011-02-01 Vikram C. Sundar Semiconductor nanocrystal composite
JP3709379B2 (ja) * 2002-03-26 2005-10-26 新日本石油株式会社 潤滑油組成物
US7700200B2 (en) * 2002-03-29 2010-04-20 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US7901939B2 (en) * 2002-05-09 2011-03-08 University Of Chicago Method for performing crystallization and reactions in pressure-driven fluid plugs
US7319709B2 (en) * 2002-07-23 2008-01-15 Massachusetts Institute Of Technology Creating photon atoms
US6872450B2 (en) 2002-10-23 2005-03-29 Evident Technologies Water-stable photoluminescent semiconductor nanocrystal complexes and method of making same
US7056471B1 (en) 2002-12-16 2006-06-06 Agency For Science Technology & Research Ternary and quarternary nanocrystals, processes for their production and uses thereof
US20040265622A1 (en) 2003-06-24 2004-12-30 Eastman Kodak Company Light emitting display
KR100657891B1 (ko) 2003-07-19 2006-12-14 삼성전자주식회사 반도체 나노결정 및 그 제조방법
US7253452B2 (en) * 2004-03-08 2007-08-07 Massachusetts Institute Of Technology Blue light emitting semiconductor nanocrystal materials

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999026299A1 (en) 1997-11-13 1999-05-27 Massachusetts Institute Of Technology Highly luminescent color-selective materials

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