JP5688881B2 - 照明装置および検出装置を有するセンサシステム - Google Patents

照明装置および検出装置を有するセンサシステム Download PDF

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Publication number
JP5688881B2
JP5688881B2 JP2009044343A JP2009044343A JP5688881B2 JP 5688881 B2 JP5688881 B2 JP 5688881B2 JP 2009044343 A JP2009044343 A JP 2009044343A JP 2009044343 A JP2009044343 A JP 2009044343A JP 5688881 B2 JP5688881 B2 JP 5688881B2
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wavelength
sensor system
active region
semiconductor
laser beam
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Japanese (ja)
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JP2009210577A5 (enExample
JP2009210577A (ja
Inventor
ルードルフ ベーリンガー マルティン
ルードルフ ベーリンガー マルティン
ヘーアライン イェルク
ヘーアライン イェルク
ルフト ヨハン
ルフト ヨハン
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
    • G01V8/00—Prospecting or detecting by optical means
    • G01V8/10—Detecting, e.g. by using light barriers
    • G01V8/20—Detecting, e.g. by using light barriers using multiple transmitters or receivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018—Lasers electrically in series
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

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  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Geophysics (AREA)
  • Semiconductor Lasers (AREA)
  • Measurement Of Optical Distance (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
JP2009044343A 2008-02-29 2009-02-26 照明装置および検出装置を有するセンサシステム Active JP5688881B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102008011865.6 2008-02-29
DE102008011865 2008-02-29
DE102008022941A DE102008022941A1 (de) 2008-02-29 2008-05-09 Sensorsystem mit einer Beleuchtungseinrichtung und einer Detektoreinrichtung
DE102008022941.5 2008-05-09

Publications (3)

Publication Number Publication Date
JP2009210577A JP2009210577A (ja) 2009-09-17
JP2009210577A5 JP2009210577A5 (enExample) 2012-01-12
JP5688881B2 true JP5688881B2 (ja) 2015-03-25

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JP2009044343A Active JP5688881B2 (ja) 2008-02-29 2009-02-26 照明装置および検出装置を有するセンサシステム

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Country Link
US (1) US8115909B2 (enExample)
JP (1) JP5688881B2 (enExample)
DE (1) DE102008022941A1 (enExample)

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US9575341B2 (en) * 2014-06-28 2017-02-21 Intel Corporation Solid state LIDAR circuit with waveguides tunable to separate phase offsets
DE102014226291A1 (de) 2014-12-17 2016-06-23 Bayerische Motoren Werke Aktiengesellschaft Vorrichtung und Verfahren zum Warnen vor Oberflächenschäden an Fahrzeugen
JPWO2017010176A1 (ja) * 2015-07-14 2018-04-26 コニカミノルタ株式会社 レーザレーダ装置
WO2017132704A1 (en) * 2016-01-31 2017-08-03 Velodyne Lidar, Inc. Lidar based 3-d imaging with far-field illumination overlap
DE102016013512A1 (de) * 2016-04-18 2017-11-09 Kastriot Merlaku Beleuchtungs-System für Kameras aller Art oder für Mobiltelefone mit Kamera
US10761195B2 (en) 2016-04-22 2020-09-01 OPSYS Tech Ltd. Multi-wavelength LIDAR system
DE102017108949B4 (de) 2016-05-13 2021-08-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
WO2018169758A1 (en) 2017-03-13 2018-09-20 OPSYS Tech Ltd. Eye-safe scanning lidar system
JP6865492B2 (ja) 2017-07-28 2021-04-28 オプシス テック リミテッド 小角度発散を伴うｖｃｓｅｌアレイｌｉｄａｒ送信機
WO2019221776A2 (en) 2017-11-15 2019-11-21 OPSYS Tech Ltd. Noise adaptive solid-state lidar system
WO2019195054A1 (en) 2018-04-01 2019-10-10 OPSYS Tech Ltd. Noise adaptive solid-state lidar system
KR102604047B1 (ko) 2018-08-03 2023-11-22 옵시스 테크 엘티디 분산 모듈형 솔리드-스테이트 광 검출 및 거리 측정 시스템
DE102019102499A1 (de) * 2019-01-31 2020-08-06 Forschungsverbund Berlin E.V. Vorrichtung zur Erzeugung von Laserstrahlung
EP3953727A4 (en) 2019-04-09 2023-01-04 Opsys Tech Ltd. SOLID STATE LIDAR TRANSMITTER WITH LASER CONTROL
DE102019206675A1 (de) * 2019-05-09 2020-11-12 Robert Bosch Gmbh Sendeeinheit zur Emission von Strahlung in eine Umgebung, LIDAR-Sensor mit einer Sendeeinheit und Verfahren zur Ansteuerung einer Sendeeinheit
KR20220003600A (ko) 2019-05-30 2022-01-10 옵시스 테크 엘티디 액추에이터를 사용하는 눈-안전 장거리 lidar 시스템
CN113924506B (zh) 2019-06-10 2025-06-24 欧普赛斯技术有限公司 眼睛安全的长范围固态lidar系统
CN114096882B (zh) 2019-06-25 2025-12-23 欧普赛斯技术有限公司 自适应多脉冲lidar系统
KR102969732B1 (ko) 2019-07-31 2026-05-27 옵시스 테크 엘티디 고-해상도 솔리드-상태 lidar 송신기
DE102020208790A1 (de) 2020-07-15 2022-01-20 Robert Bosch Gesellschaft mit beschränkter Haftung Lidar-Sensor
CN112461352A (zh) * 2020-12-08 2021-03-09 苏州亮芯光电科技有限公司 基于量子阱二极管的同质集成光电子装置
JP7633815B2 (ja) * 2021-01-29 2025-02-20 浜松ホトニクス株式会社 半導体レーザ素子及びレーザモジュール
WO2024101079A1 (ja) * 2022-11-10 2024-05-16 ソニーグループ株式会社 発光素子、発光素子アレイ、および電子機器

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DE102008022941A1 (de) 2009-09-03
US8115909B2 (en) 2012-02-14
US20090244515A1 (en) 2009-10-01
JP2009210577A (ja) 2009-09-17

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