JP5681192B2 - 多孔性非セラミック基材上に原子層堆積コーティングを適用する方法 - Google Patents
多孔性非セラミック基材上に原子層堆積コーティングを適用する方法 Download PDFInfo
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- JP5681192B2 JP5681192B2 JP2012530934A JP2012530934A JP5681192B2 JP 5681192 B2 JP5681192 B2 JP 5681192B2 JP 2012530934 A JP2012530934 A JP 2012530934A JP 2012530934 A JP2012530934 A JP 2012530934A JP 5681192 B2 JP5681192 B2 JP 5681192B2
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Description
本出願は、共に2009年9月22日に出願された米国特許仮出願第61/244,713号及び同第61/244,696号の利益を主張し、当該特許出願の開示は参照によりその全体が本明細書に組み込まれる。
本発明は、処理された多孔性非セラミック基材の製造に関し、より詳細には、これを達成するための流入原子層堆積法に関する。
入口と出口とを有する反応器を提供する工程と、
多孔性非セラミック基材が入口を出口から分離するように、少なくとも1つの多孔性非セラミック基材の少なくとも一部を配置する工程と、
第1及び第2の反応性ガスを多孔性非セラミック基材を通して出口まで流して、多孔性非セラミック基材の内部表面における一連の2回以上の自己制限的な反応を行って、内部表面の少なくとも一部の上にコンフォーマルコーティングを形成するように、入口における第1及び第2の反応性ガスの順次導入の少なくとも1回の繰り返しを実施する工程と、を含む。
本開示に関連して、用語「多孔性」とは、基材が、少なくともガスが通過することができるのに十分な開口部(即ち「細孔」)を含むことを意味する。
ALDコーティングされた多孔性非セラミック基材のいくつかの試料を、実施例と共に以下に記載する。試料の表面エネルギーについて論じる場合、以下の方法で測定値を得た。様々な濃度のダインテスト溶液(dyne test solutions)を得た。ASTM規格D−2578に準拠した30〜70ダイン/cm(0.030〜0.070N/m)の濃度範囲の溶液を、Jemmco,LLC(Mequon,WI)から購入した。表1に示される量のMgCl2・6H2Oを十分な脱イオン水と混合することによって、72〜86ダイン/cm(0.072〜0.086N/m)の濃度範囲の溶液を調製し、合計で25グラムの溶液を作製した。
米国特許第5,120,594号(Mrozinski)及び同第4,726,989号(Mrozinski)に概ね記載されている通りに、熱誘導相分離(TIPS)法を用いて微小多孔性ポリプロピレン基材を調製した。より詳細には、核化ポリプロピレン/鉱油ブレンドを調製し、滑らかで冷却されたキャスティングホイールに押し出し、そこでこの材料は固液相分離を生じた。この材料の連続基材を収集し、1,1,1−トリクロロエタン槽を通過させて鉱油を除去した。こうして形成された微小多孔性ポリプロピレン基材は、244μm(9.6ミル)の厚さを有した。次に、微小多孔性ポリプロピレン基材をASTM規格F316−03に準拠してテストし、0.90μmのバブルポイント孔径に応じた69.7kPa(10.11psi)のイソプロピルアルコールバブルポイント圧を有することが分かった。更に、気孔率は83.3%であり、純水透過性能は477L/(m2−h−kPa)であった。基材は強疎水性であり、29ダイン/cm(0.029N/m)の表面エネルギーを有していた。
別の微小多孔性基材を、Solvay Advanced Polymers,L.L.C.(Alpharetta,GA)から商品名及び等級表示(grade designation)HALAR 902で市販のエチレン−クロロトリフルオロエチレンコポリマー(ECTFE)から調製した。これは、米国特許出願公開第2009/0067807号に概ね記載されているTIPSプロセスによって行われた。より詳細には、微小多孔性ECTFE基材は、水を充填した急冷槽の上に配置されたパターン化されたキャスティングホイールの上方に位置する、融解ポンプ、ネックチューブ、及びシートダイを備えた2軸押出成形機を使用して作製された。この設備を使用して、ECTFEと、希釈剤と、溶媒と、を含む流延用ドープ(casting dope)を溶融押し出しし、このドープをキャストした後急冷し、希釈剤を除去するために溶媒洗浄し、得られた基材を48μm(1.9ミル)の最終厚さまで延伸することによって、微小多孔性ECTFE基材を作製した。次に、この微小多孔性ECTFE基材をASTM規格F316−03に準拠してテストした。0.34μmのバブルポイント孔径に応じた186.1kPa(26.99psi)のイソプロピルアルコールバブルポイント圧、65.3%の気孔率、及び48L/(m2−h−kPa)の純水透過性能を有することが分かった。この膜は疎水性であり、37ダイン/cm(0.037N/m)の表面エネルギーを有していた。
別の微小多孔性基材である不織布(メルトブローン)ポリプロピレンウェブを以下の通りに調製した。Total Petrochemical(Houston,TX)からTotal 3960として市販のポリプロピレンペレットを使用して、従来技術を用いて、具体的には、溶融ポリプロピレンを、7.6ポンド/時間(0.96g/s)の速度及び285℃(公称)の溶解温度で、Naval Research Lab(NRL)タイプの幅10インチ(25.4cm)のメルトブローンダイを通して、ダイから12インチ(30.5cm)の距離に置かれた収集ドラムに向けて押し出すことにより、メルトブローンウェブを形成した。得られたウェブは10フィート/分(305cm/分)で収集された。観察された坪量は67g/m2であった。空気の温度及び速度を調整して、有効繊維直径(EFD)7.9マイクロメートルを得た。このEFDは、「The Separation of Airborne Dust and Particles」(Institution of Mechanical Engineers,London Proceedings 1B,1952)に記載の方法に従って計算された。
Fiber Materials,Inc.(Biddeford,ME)から「GRADE GH」として市販の、公称厚さが0.25インチ(6.35mm)であるグラファイトフェルトの形態の別の微小多孔性基材を得た。
3M Company(St.Paul,MN)から「1210NC」として市販の、ガラス繊維マットの形態の別の微小多孔性基材を得た。
図1に全体的に示されているような反応器を、Kimball Physics Inc.(Wilton,NH)からConFlat Double Side Flanges(600−400−D CF)として市販の、直径6インチ(15.24cm)の両面フランジを3枚使用して作製した。フランジの積層体の上流側になる方に、Kimball Physics Inc.から入手の、1/8”(0.32cm)NPT側孔を1つ有する直径6インチ(15.24cm)のConFlat Double Side Flange(600DXSP12)を1つ取り付けた。この側孔は、プロセスの間の圧力をモニタすることができるように、MKS Instruments(Andover,MA)から市販のBaratron(10torr(1.3kPa)圧力計を取り付けるために使用された。この要素の積層体の各末端部を、Kimball Physics Inc.から市販の直径6インチ(15.24cm)のConFlat Zero−Length Reducer Flange(600x275−150−0−T1)で塞いだ。積層体の接合点のそれぞれにおいて、適切な寸法の銅ガスケットを使用して良好な真空封止を形成した。
反応器の両面フランジのそれぞれを使用して、基材Aとして上記された多孔性ポリプロピレン膜から切断されるディスクを支持した。両面接着テープでディスクを銅ガスケットに取り付け、この銅ガスケットを直径6インチ(15.24cm)のConFlat Double Side Flangesの間の通常の封止位置に設置することによって、ディスクの3つの試料のそれぞれを反応器の中に置いた。反応器が一緒に封止され、堅く締められて反応器本体を形成すると、ConFlat Double Side Flangeシールは膜を貫通し、従来の銅ガスケット封止機構を介して気密のシールを形成した。この封止された反応器の壁もまた、膜を定位置に保持するのを助け、また膜の縁部を封止して反応性ガスが膜を迂回するのを防止した。
実験は、使用した基材が基材Aでなく基材Bであり、反応器、第1及び第2の入口ライン、及びパージガスラインを加熱器で60℃に加熱し、繰り返しの回数が35回でなく20回であったことを除いて、概ね実施例1の手順に従って実施された。20回の繰り返しを行った後、反応器を開き、試料Bの3枚のディスクのそれぞれの表面エネルギーを評価した。各ディスクは86ダイン/cm(0.086N/m)を超える表面エネルギーを有し、高度の親水性を示すことが判明した。
実験は、使用した基材が基材Aでなく基材Cであり、反応器、第1及び第2の入口ライン、及びパージガスラインを加熱器で60℃に加熱し、繰り返しの回数が35回でなく17回であったことを除いて、概ね実施例1の手順に従って実施された。17回の繰り返しを行った後、反応器を開き、試料Cの3枚のディスクのそれぞれの表面エネルギーを評価した。各ディスクは86ダイン/cm(0.086N/m)を超える表面エネルギーを有し、高度の親水性を示すことが判明した。
実験は、使用した基材が基材Aでなく基材Dであり、反応器を加熱器で60℃に加熱し、第1及び第2の入口ライン及びパージガスラインを加熱器で70℃に加熱し、繰り返しの回数が35回でなく20回であったことを除いて、概ね実施例1の手順に従って実施された。20回の繰り返しを行った後、反応器を開いた基材がコーティングされたことを実証するためにX線分析を行った。
実験は、使用した基材が基材Aでなく基材Eであり、反応器を加熱器で60℃に加熱し、第1及び第2の入口ライン及びパージガスラインを加熱器で70℃に加熱し、繰り返しの回数が35回でなく20回であったことを除いて、概ね実施例1の手順に従って実施された。20回の繰り返しを行った後、反応器を開いた。基材がコーティングされたことを実証するためにX線分析を行った。
本発明はまた、以下の内容を包含する。
(1)
多孔性非セラミック基材上にコンフォーマルコーティングを堆積させる方法であって、
入口と出口とを有する反応器を提供する工程と、
多孔性非セラミック基材が前記入口を前記出口から分離するように、少なくとも1つの前記多孔性非セラミック基材の少なくとも一部を配置する工程と、
第1及び第2の反応性ガスを前記多孔性非セラミック基材を通して出口まで流して、前記多孔性非セラミック基材の内部表面における一連の2回以上の自己制限的な反応を行って、前記内部表面の少なくとも一部の上にコンフォーマルコーティングを形成するように、前記入口における前記第1及び第2の反応性ガスの順次導入の少なくとも1回の繰り返しを実施する工程と、を含む、方法。
(2)
前記実施工程が、少なくとも8回の繰り返しで行われる、項目1に記載の方法。
(3)
前記実施工程が、少なくとも20回の繰り返しで行われる、項目2に記載の方法。
(4)
前記実施工程が、前記内部表面の表面エネルギーが72ダイン/cmを超えるまで繰り返される、項目1に記載の方法。
(5)
前記出口に最も近い前記多孔性非セラミック基材の外部表面が、72ダイン/cm未満の表面エネルギーを有する、項目4に記載の方法。
(6)
前記多孔性非セラミック基材が多孔性ポリマー基材であり、前記導入が、前記多孔性ポリマー基材の融解温度を下回る温度で行われる、項目1に記載の方法。
(7)
第2の多孔性非セラミック基材もまた前記入口を前記出口から分離するように、少なくとも前記第2の多孔性非セラミック基材の少なくとも一部を配置することを更に含む、項目1に記載の方法。
(8)
前記多孔性非セラミック基材が、不定長の材料のウェブの形態であり、前記配置手段がロールツーロールプロセスを可能とするものである、項目1に記載の方法。
(9)
前記ロールツーロールプロセスが、ステップアンドリピートプロセスである、項目8に記載の方法。
(10)
前記ロールツーロールプロセスが、連続移動プロセスである、項目8に記載の方法。
(11)
前記反応器がフィルタ本体の形態である、項目1に記載の方法。
(12)
前記第1又は第2の反応性ガスの少なくとも一方が、非反応性搬送ガス成分を含む、項目10に記載の方法。
(13)
前記多孔性非セラミック基材が多孔性ポリマー基材である、項目1に記載の方法。
(14)
前記多孔性ポリマー基材がTIPS基材である、項目13に記載の方法。
(15)
前記多孔性ポリマー基材が不織布基材である、項目13に記載の方法。
(16)
前記コンフォーマルコーティングが、金属酸化物、金属窒化物、金属硫化物、又はこれらの組み合わせを含む、項目1に記載の方法。
(17)
前記金属が、ケイ素、チタン、アルミニウム、ジルコニウム、及びイットリウムからなる群から選択される、項目16に記載の方法。
(18)
前記金属が、ケイ素、チタン、及びアルミニウムからなる群から選択される、項目17に記載の方法。
(19)
前記金属がアルミニウムである、項目18に記載の方法。
(20)
前記コンフォーマルコーティングが酸化アルミニウムを含む、項目16に記載の方法。
(21)
前記第1及び第2の反応性ガスの前記導入の間の温度が、約300℃以下である、項目1に記載の方法。
(22)
前記第1及び第2の反応性ガスの前記導入の間の温度が、約60℃以下である、項目21に記載の方法。
(23)
前記コンフォーマルコーティングに化学部分をグラフティングする工程を更に含む、項目1に記載の方法。
(24)
コンフォーマルコーティングが、前記多孔性非セラミック基材の内部表面全体に形成される、項目1に記載の方法。
(25)
実施する繰り返しの回数を制御することにより、前記コンフォーマルコーティングを使用して前記多孔性非セラミック基材の気孔率を低減して所望の気孔率を達成する、項目1に記載の方法。
Claims (4)
- 多孔性疎水性ポリマー基材上にコンフォーマルコーティングを堆積させる方法であって、
入口と出口とを有する反応器を提供する工程と、
多孔性疎水性ポリマー基材が前記入口を前記出口から分離するように、少なくとも1つの前記多孔性疎水性ポリマー基材の少なくとも一部を配置する工程と、
第1及び第2の反応性ガスを前記多孔性疎水性ポリマー基材を通して出口まで流して、前記多孔性疎水性ポリマー基材の内部表面における一連の2回以上の自己制限的な反応を行って、前記内部表面の少なくとも一部の上にコンフォーマルコーティングを形成するように、前記入口における前記第1及び第2の反応性ガスの順次導入の少なくとも1回の繰り返しを実施する工程と、を含み、
前記実施工程が、前記内部表面の表面エネルギーが72ダイン/cm(0.072N/m)を超えるまで繰り返される、
方法。 - 前記導入が、前記多孔性疎水性ポリマー基材の融解温度を下回る温度で行われる、請求項1に記載の方法。
- 前記多孔性疎水性ポリマー基材が、不定長の材料のウェブの形態であり、前記配置手段がロールツーロールプロセスを可能とするものである、請求項1に記載の方法。
- 前記コンフォーマルコーティングが、金属酸化物、金属窒化物、金属硫化物、又はこれらの組み合わせを含む、請求項1に記載の方法。
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KR101714814B1 (ko) * | 2009-09-22 | 2017-03-09 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 다공성 비세라믹 기판상에 원자층 증착 코팅을 도포하는 방법 |
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Also Published As
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JP2013505368A (ja) | 2013-02-14 |
KR20120073280A (ko) | 2012-07-04 |
KR101720821B1 (ko) | 2017-03-28 |
US20120171403A1 (en) | 2012-07-05 |
CN102575346A (zh) | 2012-07-11 |
CN102782179B (zh) | 2015-11-25 |
WO2011037798A1 (en) | 2011-03-31 |
EP2480702A4 (en) | 2013-10-30 |
WO2011037831A3 (en) | 2011-06-23 |
KR20120085262A (ko) | 2012-07-31 |
BR112012005997A2 (pt) | 2016-03-22 |
BR112012005212A2 (pt) | 2016-03-15 |
WO2011037831A2 (en) | 2011-03-31 |
EP2480703A4 (en) | 2013-10-30 |
US20120171376A1 (en) | 2012-07-05 |
CN102782179A (zh) | 2012-11-14 |
US8859040B2 (en) | 2014-10-14 |
EP2480702A2 (en) | 2012-08-01 |
JP2013505156A (ja) | 2013-02-14 |
CN102575346B (zh) | 2015-01-28 |
KR101714814B1 (ko) | 2017-03-09 |
EP2480703A1 (en) | 2012-08-01 |
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