JP5675785B2 - マルチフェロイックナノスケール薄膜を製造する方法 - Google Patents
マルチフェロイックナノスケール薄膜を製造する方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 230000005291 magnetic effect Effects 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 33
- 239000010408 film Substances 0.000 claims description 25
- 239000002159 nanocrystal Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 230000010287 polarization Effects 0.000 claims description 15
- 230000005684 electric field Effects 0.000 claims description 14
- 239000002243 precursor Substances 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052797 bismuth Inorganic materials 0.000 claims description 8
- 229910002554 Fe(NO3)3·9H2O Inorganic materials 0.000 claims description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 6
- 229910000859 α-Fe Inorganic materials 0.000 claims description 6
- 230000005294 ferromagnetic effect Effects 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 12
- 239000000523 sample Substances 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 229910002902 BiFeO3 Inorganic materials 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 230000005389 magnetism Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- 230000002194 synthesizing effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- -1 BiFeO3 Chemical class 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007777 multifunctional material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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Description
本願は、2009年5月18日に出願された米国仮出願第61/179,214号の利益を主張し、その内容は参照によって組み込まれる。
(発明の技術分野)
本発明は、マルチフェロイック薄膜材料に関し、より特定的には前記材料の製造方法に関する。
マルチフェロイクスについての研究は、最近、材料科学において最も興味深いフロンティアの一つとして浮上している。マルチフェロイクスは磁電性要素であり、その共存する特有の電気秩序および磁気秩序の結合ために、多機能材料の設計および合成における潜在的な用途を有する。磁気分極は電界の適用により切り替えることができ、かつ、強誘電分極は磁界の適用により切り替えることができる。そのため、マルチフェロイクスは新規なデバイス概念の考案においてのみならず、基礎物理学の研究においても重要な材料である。これらの化合物は磁性かつ強誘電性のデバイスの機会を提供するばかりでなく、変調した光学特性、磁電性かつマルチフェロイックな共鳴装置、移相器、先進的なマイクロ波およびミリ波応用のための遅延線およびフィルタ、磁場変動および磁場監視のための検出器、情報保存、スピントロニクス分野の新興分野、およびセンサを含む潜在的な用途の基礎となり得る。
本発明の一実施形態は、マルチフェロイック前駆体溶液10を提供する工程、前駆体溶液をスピンキャスティングし、スピンキャスト膜20を製造する工程、およびスピンキャスト膜30を加熱する工程を含む。一実施形態において、マルチフェロイック薄膜材料はフェライトであり、特にビスマスフェライトでありうる。マルチフェロイック前駆体溶液は、ビスマス、鉄、および酸素を含んでいてもよい。特に、マルチフェロイック前駆体溶液はBi(NO3)3・5H2OおよびFe(NO3)3・9H2Oを含んでいてもよい。マルチフェロイック前駆体溶液がBi(NO3)3・5H2OおよびFe(NO3)3・9H2Oからなる場合、それらは溶液中に1:1のモル比で存在しうる。前駆体溶液は任意の適切な希釈剤中に溶解されてもよい。適切な希釈剤の一例はエチレングリコールである。
本発明の方法は、最終的な膜においてナノ結晶の均一配列を形成することができる。例えば、本発明の方法によって製造されたナノ結晶は、直径約200nmかつ高さ約45nmでありうる。
Claims (16)
- マルチフェロイック薄膜材料を製造する方法であって、
a)Bi、Fe、およびOを含むマルチフェロイック前駆体溶液を提供する工程、
b)前駆体溶液をスピンキャスティングしてスピンキャスト膜を製造する工程、および
c)スピンキャスト膜を加熱することにより、マルチフェロイックビスマスフェライト(BiFeO 3 )膜を形成する工程
を有し、
BiFeO 3 膜は、ペロブスカイト構造中のBサイトにFe原子が配置されたペロブスカイト構造のBiFeO 3 ナノ結晶を有し、かつ
BiFeO 3 膜は、室温で磁気電気結合可能なBiFeO 3 ナノ結晶の均一配列を有する、
方法。 - マルチフェロイック前駆体溶液が、Bi(NO3)3・5H2OおよびFe(NO3)3・9H2Oを含む請求項1に記載の方法。
- Bi(NO3)3・5H2OおよびFe(NO3)3・9H2Oが1:1のモル比で存在する請求項2に記載の方法。
- Bi(NO3)3・5H2OおよびFe(NO3)3・9H2Oがエチレングリコール中に溶解している請求項2に記載の方法。
- 工程(c)において、スピンキャスト膜が600℃に加熱される請求項1に記載の方法。
- ナノ結晶が直径200nmかつ高さ45nmである請求項5に記載の方法。
- 適用された磁界に応じてBiFeO 3 ナノ結晶の電気分極を調節する工程をさらに有する請求項1に記載の方法。
- BiFeO 3 ナノ結晶が室温で磁界により誘発された電気分極に供される請求項1に記載の方法。
- 適用された電界に応じてBiFeO 3 ナノ結晶の強磁性分極を調節する工程をさらに有する請求項1に記載の方法。
- BiFeO 3 ナノ結晶が、ナノ結晶の強磁性分極の電界制御に供される請求項1に記載の方法。
- ナノ結晶の強磁性特性が電界制御に供され、ナノ結晶の強誘電特性が磁界制御に供される請求項1に記載の方法。
- ナノ結晶の強誘電特性が磁界制御に供される請求項1に記載の方法。
- ナノ結晶の強磁性特性が電界制御に供される請求項1に記載の方法。
- BiFeO 3 膜の中立性および絶縁性を維持するために、ペロブスカイト構造のBサイトに配置されたFe原子を、Feよりも高い原子価を有する磁性金属原子に置換する工程をさらに有する請求項1に記載の方法。
- Bサイトに配置されたFe原子のうちの1%〜30%が、Feよりも高い原子価を有する磁性金属原子に置換される請求項14に記載の方法。
- Feよりも高い原子価を有する磁性金属原子が、V、Nb、Ta、W、Ti、Zr、およびHfからなる群から選択される請求項15に記載の方法。
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