JP5674096B2 - 光電変換セル及びアレイとその読み出し方法と回路 - Google Patents

光電変換セル及びアレイとその読み出し方法と回路 Download PDF

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JP5674096B2
JP5674096B2 JP2010164791A JP2010164791A JP5674096B2 JP 5674096 B2 JP5674096 B2 JP 5674096B2 JP 2010164791 A JP2010164791 A JP 2010164791A JP 2010164791 A JP2010164791 A JP 2010164791A JP 5674096 B2 JP5674096 B2 JP 5674096B2
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semiconductor region
photoelectric conversion
potential
cell
output
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JP2010164791A
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Japanese (ja)
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JP2012028975A5 (enExample
JP2012028975A (ja
Inventor
林　豊
豊 林
靖 永宗
靖 永宗
太田　敏隆
敏隆 太田
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National Institute of Advanced Industrial Science and Technology AIST
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National Institute of Advanced Industrial Science and Technology AIST
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Priority to JP2010164791A priority Critical patent/JP5674096B2/ja
Priority to US13/811,623 priority patent/US9142579B2/en
Priority to PCT/JP2011/066753 priority patent/WO2012011585A1/ja
Priority to EP11809755.9A priority patent/EP2597864A4/en
Publication of JP2012028975A publication Critical patent/JP2012028975A/ja
Publication of JP2012028975A5 publication Critical patent/JP2012028975A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
JP2010164791A 2010-07-22 2010-07-22 光電変換セル及びアレイとその読み出し方法と回路 Expired - Fee Related JP5674096B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010164791A JP5674096B2 (ja) 2010-07-22 2010-07-22 光電変換セル及びアレイとその読み出し方法と回路
US13/811,623 US9142579B2 (en) 2010-07-22 2011-07-22 Photoelectric conversion cell and array, reset circuit and electrical signal sense control circuit therefor
PCT/JP2011/066753 WO2012011585A1 (ja) 2010-07-22 2011-07-22 光電変換セル及びアレイとその読み出し方法と回路
EP11809755.9A EP2597864A4 (en) 2010-07-22 2011-07-22 Photovoltaic cell, array, readout method for same and circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010164791A JP5674096B2 (ja) 2010-07-22 2010-07-22 光電変換セル及びアレイとその読み出し方法と回路

Publications (3)

Publication Number Publication Date
JP2012028975A JP2012028975A (ja) 2012-02-09
JP2012028975A5 JP2012028975A5 (enExample) 2013-03-14
JP5674096B2 true JP5674096B2 (ja) 2015-02-25

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JP2010164791A Expired - Fee Related JP5674096B2 (ja) 2010-07-22 2010-07-22 光電変換セル及びアレイとその読み出し方法と回路

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Country Link
US (1) US9142579B2 (enExample)
EP (1) EP2597864A4 (enExample)
JP (1) JP5674096B2 (enExample)
WO (1) WO2012011585A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3113486A1 (en) 2015-06-30 2017-01-04 Ricoh Company, Ltd. Photoelectric conversion device and image generation device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9197220B2 (en) * 2011-10-31 2015-11-24 National Institute Of Advanced Industrial Science And Technology Method for resetting photoelectric conversion device, and photoelectric conversion device
EP2797114B1 (en) * 2013-04-23 2019-01-23 Nxp B.V. MOS-transistor structure as light sensor
JP6263914B2 (ja) 2013-09-10 2018-01-24 株式会社リコー 撮像装置、撮像装置の駆動方法、および、カメラ
JP6578658B2 (ja) 2015-01-05 2019-09-25 株式会社リコー 光電変換装置及び画像生成装置並びに光電変換装置の出力の補正方法
EP3913673B1 (en) * 2017-04-04 2023-03-22 Artilux Inc. Method and circuit to operate a high-speed light sensing apparatus

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198959A (ja) 1984-03-22 1985-10-08 Matsushita Electric Ind Co Ltd イメ−ジセンサ
JPH01288181A (ja) 1988-05-16 1989-11-20 Seiko Instr Inc 半導体イメージセンサ装置
JPH02121580A (ja) 1988-10-31 1990-05-09 Matsushita Electric Ind Co Ltd イメージセンサ
JPH02155363A (ja) 1988-12-07 1990-06-14 Matsushita Electric Ind Co Ltd イメージセンサ
JPH05102453A (ja) * 1991-10-04 1993-04-23 Matsushita Electric Ind Co Ltd イメージセンサチツプ
JP2641416B2 (ja) 1995-10-09 1997-08-13 キヤノン株式会社 光電変換装置
JP4058791B2 (ja) * 1998-03-18 2008-03-12 ソニー株式会社 固体撮像素子およびその駆動方法、並びにカメラシステム
GB9806094D0 (en) 1998-03-20 1998-05-20 Isis Innovation Improvements in buffer circuits
JP3315651B2 (ja) * 1998-08-31 2002-08-19 キヤノン株式会社 光センサと固体撮像装置
US6300615B1 (en) 1998-08-31 2001-10-09 Canon Kabushiki Kaisha Photoelectric conversion apparatus
US20010015404A1 (en) 2000-02-18 2001-08-23 Minolta Co., Ltd. Solid-state image-sensing device
JP2001230399A (ja) 2000-02-18 2001-08-24 Minolta Co Ltd 固体撮像装置
US7592576B1 (en) * 2007-07-02 2009-09-22 National Instute Of Advanced Industrial Science And Technology Optical sensor array, sensing method and circuit therefore, and device and apparatus thereby
JP5083982B2 (ja) 2008-07-29 2012-11-28 独立行政法人産業技術総合研究所 光センサーアレイ、光センサーアレイデバイス、撮像装置、及び光センサーアレイの検出方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3113486A1 (en) 2015-06-30 2017-01-04 Ricoh Company, Ltd. Photoelectric conversion device and image generation device
US10298869B2 (en) 2015-06-30 2019-05-21 Ricoh Company, Ltd. Photoelectric conversion device and image generation device

Also Published As

Publication number Publication date
EP2597864A1 (en) 2013-05-29
EP2597864A4 (en) 2014-03-26
US20130119240A1 (en) 2013-05-16
WO2012011585A1 (ja) 2012-01-26
JP2012028975A (ja) 2012-02-09
US9142579B2 (en) 2015-09-22

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