JP5674096B2 - 光電変換セル及びアレイとその読み出し方法と回路 - Google Patents

光電変換セル及びアレイとその読み出し方法と回路 Download PDF

Info

Publication number
JP5674096B2
JP5674096B2 JP2010164791A JP2010164791A JP5674096B2 JP 5674096 B2 JP5674096 B2 JP 5674096B2 JP 2010164791 A JP2010164791 A JP 2010164791A JP 2010164791 A JP2010164791 A JP 2010164791A JP 5674096 B2 JP5674096 B2 JP 5674096B2
Authority
JP
Japan
Prior art keywords
semiconductor region
photoelectric conversion
potential
cell
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010164791A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012028975A (ja
JP2012028975A5 (OSRAM
Inventor
林　豊
豊 林
靖 永宗
靖 永宗
太田　敏隆
敏隆 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
National Institute of Advanced Industrial Science and Technology AIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute of Advanced Industrial Science and Technology AIST filed Critical National Institute of Advanced Industrial Science and Technology AIST
Priority to JP2010164791A priority Critical patent/JP5674096B2/ja
Priority to EP11809755.9A priority patent/EP2597864A4/en
Priority to PCT/JP2011/066753 priority patent/WO2012011585A1/ja
Priority to US13/811,623 priority patent/US9142579B2/en
Publication of JP2012028975A publication Critical patent/JP2012028975A/ja
Publication of JP2012028975A5 publication Critical patent/JP2012028975A5/ja
Application granted granted Critical
Publication of JP5674096B2 publication Critical patent/JP5674096B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2010164791A 2010-07-22 2010-07-22 光電変換セル及びアレイとその読み出し方法と回路 Expired - Fee Related JP5674096B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010164791A JP5674096B2 (ja) 2010-07-22 2010-07-22 光電変換セル及びアレイとその読み出し方法と回路
EP11809755.9A EP2597864A4 (en) 2010-07-22 2011-07-22 Photovoltaic cell, array, readout method for same and circuit
PCT/JP2011/066753 WO2012011585A1 (ja) 2010-07-22 2011-07-22 光電変換セル及びアレイとその読み出し方法と回路
US13/811,623 US9142579B2 (en) 2010-07-22 2011-07-22 Photoelectric conversion cell and array, reset circuit and electrical signal sense control circuit therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010164791A JP5674096B2 (ja) 2010-07-22 2010-07-22 光電変換セル及びアレイとその読み出し方法と回路

Publications (3)

Publication Number Publication Date
JP2012028975A JP2012028975A (ja) 2012-02-09
JP2012028975A5 JP2012028975A5 (OSRAM) 2013-03-14
JP5674096B2 true JP5674096B2 (ja) 2015-02-25

Family

ID=45497002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010164791A Expired - Fee Related JP5674096B2 (ja) 2010-07-22 2010-07-22 光電変換セル及びアレイとその読み出し方法と回路

Country Status (4)

Country Link
US (1) US9142579B2 (OSRAM)
EP (1) EP2597864A4 (OSRAM)
JP (1) JP5674096B2 (OSRAM)
WO (1) WO2012011585A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3113486A1 (en) 2015-06-30 2017-01-04 Ricoh Company, Ltd. Photoelectric conversion device and image generation device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6137522B2 (ja) * 2011-10-31 2017-05-31 国立研究開発法人産業技術総合研究所 光電変換装置のリセット方法と、光電変換装置、光電変換アレイ、および撮像装置
EP2797114B1 (en) * 2013-04-23 2019-01-23 Nxp B.V. MOS-transistor structure as light sensor
JP6263914B2 (ja) 2013-09-10 2018-01-24 株式会社リコー 撮像装置、撮像装置の駆動方法、および、カメラ
JP6578658B2 (ja) 2015-01-05 2019-09-25 株式会社リコー 光電変換装置及び画像生成装置並びに光電変換装置の出力の補正方法
EP3913673B1 (en) * 2017-04-04 2023-03-22 Artilux Inc. Method and circuit to operate a high-speed light sensing apparatus

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198959A (ja) 1984-03-22 1985-10-08 Matsushita Electric Ind Co Ltd イメ−ジセンサ
JPH01288181A (ja) 1988-05-16 1989-11-20 Seiko Instr Inc 半導体イメージセンサ装置
JPH02121580A (ja) * 1988-10-31 1990-05-09 Matsushita Electric Ind Co Ltd イメージセンサ
JPH02155363A (ja) 1988-12-07 1990-06-14 Matsushita Electric Ind Co Ltd イメージセンサ
JPH05102453A (ja) * 1991-10-04 1993-04-23 Matsushita Electric Ind Co Ltd イメージセンサチツプ
JP2641416B2 (ja) 1995-10-09 1997-08-13 キヤノン株式会社 光電変換装置
JP4058791B2 (ja) * 1998-03-18 2008-03-12 ソニー株式会社 固体撮像素子およびその駆動方法、並びにカメラシステム
GB9806094D0 (en) * 1998-03-20 1998-05-20 Isis Innovation Improvements in buffer circuits
US6300615B1 (en) 1998-08-31 2001-10-09 Canon Kabushiki Kaisha Photoelectric conversion apparatus
JP3315651B2 (ja) * 1998-08-31 2002-08-19 キヤノン株式会社 光センサと固体撮像装置
US20010015404A1 (en) 2000-02-18 2001-08-23 Minolta Co., Ltd. Solid-state image-sensing device
JP2001230399A (ja) * 2000-02-18 2001-08-24 Minolta Co Ltd 固体撮像装置
US7592576B1 (en) * 2007-07-02 2009-09-22 National Instute Of Advanced Industrial Science And Technology Optical sensor array, sensing method and circuit therefore, and device and apparatus thereby
JP5083982B2 (ja) * 2008-07-29 2012-11-28 独立行政法人産業技術総合研究所 光センサーアレイ、光センサーアレイデバイス、撮像装置、及び光センサーアレイの検出方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3113486A1 (en) 2015-06-30 2017-01-04 Ricoh Company, Ltd. Photoelectric conversion device and image generation device
US10298869B2 (en) 2015-06-30 2019-05-21 Ricoh Company, Ltd. Photoelectric conversion device and image generation device

Also Published As

Publication number Publication date
US20130119240A1 (en) 2013-05-16
JP2012028975A (ja) 2012-02-09
EP2597864A1 (en) 2013-05-29
WO2012011585A1 (ja) 2012-01-26
US9142579B2 (en) 2015-09-22
EP2597864A4 (en) 2014-03-26

Similar Documents

Publication Publication Date Title
JPH0444465B2 (OSRAM)
JP6137522B2 (ja) 光電変換装置のリセット方法と、光電変換装置、光電変換アレイ、および撮像装置
JP5907500B2 (ja) 光電変換装置、光電変換アレイおよび撮像装置
JPH0666446B2 (ja) 固体撮像素子
CN101444085A (zh) 半导体摄像元件
JP3891126B2 (ja) 固体撮像装置
US20070218580A1 (en) Triple-junction filterless CMOS imager cell
US9197832B2 (en) Solid-state image pickup apparatus and drive method therefor
US20110006192A1 (en) Optical sensor array and optical sensor circuit
WO2012011585A1 (ja) 光電変換セル及びアレイとその読み出し方法と回路
JP4165250B2 (ja) 固体撮像装置
JP7482447B2 (ja) フォトディテクタ、フォトディテクタアレイおよび駆動方法
JP7597381B2 (ja) Ｕｔｂｂ光検出器ピクセルユニット、アレイ及び方法
JP4295740B2 (ja) 電荷結合素子型イメージセンサ
US20210195126A1 (en) Low noise pixel for image sensor
JPWO2012124760A1 (ja) ゲイン可変方法、ゲイン可変光電変換素子、ゲイン可変光電変換セル、ゲイン可変光電変換アレイ、読み出し方法、および、回路
TW201513327A (zh) 具有緊鄰儲存閘極的雙重自我對準植入物之影像感測器像素單元
CN110581190B (zh) 一种适应亚微米像素的utbb光电探测器、阵列和方法
JP2012028975A5 (OSRAM)
JP4507847B2 (ja) 撮像デバイス
JP4718169B2 (ja) Ｃｍｏｓ撮像デバイス回路
JP3891125B2 (ja) 固体撮像装置
JP2003101880A (ja) 熱型赤外線イメージセンサ
JP5083982B2 (ja) 光センサーアレイ、光センサーアレイデバイス、撮像装置、及び光センサーアレイの検出方法
JP2006173487A (ja) 撮像デバイス

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130125

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130305

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140212

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140411

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141209

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141218

R150 Certificate of patent or registration of utility model

Ref document number: 5674096

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees