JP5673963B2 - ポジ型レジスト組成物及びマイクロレンズの製造方法 - Google Patents
ポジ型レジスト組成物及びマイクロレンズの製造方法 Download PDFInfo
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- JP5673963B2 JP5673963B2 JP2011551818A JP2011551818A JP5673963B2 JP 5673963 B2 JP5673963 B2 JP 5673963B2 JP 2011551818 A JP2011551818 A JP 2011551818A JP 2011551818 A JP2011551818 A JP 2011551818A JP 5673963 B2 JP5673963 B2 JP 5673963B2
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- 238000004519 manufacturing process Methods 0.000 title description 2
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 15
- 125000000962 organic group Chemical group 0.000 claims description 15
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- 238000004904 shortening Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- ZEMGGZBWXRYJHK-UHFFFAOYSA-N thiouracil Chemical compound O=C1C=CNC(=S)N1 ZEMGGZBWXRYJHK-UHFFFAOYSA-N 0.000 description 1
- 229950000329 thiouracil Drugs 0.000 description 1
- 150000003585 thioureas Chemical class 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- KXFSUVJPEQYUGN-UHFFFAOYSA-N trimethyl(phenyl)silane Chemical compound C[Si](C)(C)C1=CC=CC=C1 KXFSUVJPEQYUGN-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D405/00—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom
- C07D405/02—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings
- C07D405/06—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings linked by a carbon chain containing only aliphatic carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D405/00—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom
- C07D405/14—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing three or more hetero rings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011551818A JP5673963B2 (ja) | 2010-01-26 | 2011-01-19 | ポジ型レジスト組成物及びマイクロレンズの製造方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010014505 | 2010-01-26 | ||
| JP2010014505 | 2010-01-26 | ||
| JP2011551818A JP5673963B2 (ja) | 2010-01-26 | 2011-01-19 | ポジ型レジスト組成物及びマイクロレンズの製造方法 |
| PCT/JP2011/050854 WO2011093188A1 (fr) | 2010-01-26 | 2011-01-19 | Composition de réserve de type positif et procédé pour produire une microlentille |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2011093188A1 JPWO2011093188A1 (ja) | 2013-06-06 |
| JP5673963B2 true JP5673963B2 (ja) | 2015-02-18 |
Family
ID=44319178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011551818A Active JP5673963B2 (ja) | 2010-01-26 | 2011-01-19 | ポジ型レジスト組成物及びマイクロレンズの製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8722311B2 (fr) |
| EP (1) | EP2530524B1 (fr) |
| JP (1) | JP5673963B2 (fr) |
| KR (1) | KR101852523B1 (fr) |
| CN (1) | CN102725691B (fr) |
| TW (1) | TWI548943B (fr) |
| WO (1) | WO2011093188A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210052452A (ko) | 2018-08-30 | 2021-05-10 | 닛산 가가쿠 가부시키가이샤 | 네가티브형 감광성 수지조성물 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100017758A (ko) * | 2007-05-17 | 2010-02-16 | 닛산 가가쿠 고교 가부시키 가이샤 | 감광성 수지 및 마이크로 렌즈의 제조 방법 |
| US8912295B2 (en) * | 2009-02-10 | 2014-12-16 | Nissan Chemical Industries, Ltd. | Long chain alkylene group-containing epoxy compound |
| US8778597B2 (en) * | 2010-01-26 | 2014-07-15 | Nissan Chemical Industries, Ltd. | Long-chain alkylene-containing curable epoxy resin composition |
| DE102010028062A1 (de) * | 2010-04-22 | 2011-10-27 | Evonik Degussa Gmbh | Verfahren zur Herstellung vernetzter organischer Polymere |
| US20130172522A1 (en) * | 2010-08-05 | 2013-07-04 | Nissan Chemical Industries, Ltd. | Epoxy compound with nitrogen-containing ring |
| CN103068823A (zh) | 2010-08-05 | 2013-04-24 | 日产化学工业株式会社 | 具有氰脲酸骨架的环氧化合物的制造方法 |
| KR101252063B1 (ko) | 2011-08-25 | 2013-04-12 | 한국생산기술연구원 | 알콕시실릴기를 갖는 에폭시 화합물, 이의 제조 방법, 이를 포함하는 조성물과 경화물 및 이의 용도 |
| JP6124013B2 (ja) * | 2011-09-29 | 2017-05-10 | 日産化学工業株式会社 | 光硬化性樹脂組成物 |
| JP2015502919A (ja) * | 2011-11-01 | 2015-01-29 | コリア インスティチュート オブ インダストリアル テクノロジー | アルコキシシリル基を有するイソシアヌレートエポキシ化合物、その製造方法、それを含む組成物、該組成物の硬化物及び該組成物の用途 |
| US9902803B2 (en) | 2012-03-14 | 2018-02-27 | Korea Institute Of Industrial Technology | Epoxy compound having alkoxy silyl group, composition comprising same, cured product, use thereof and method for preparing epoxy compound having alkoxy silyl group |
| EP2835373B1 (fr) | 2012-04-02 | 2019-09-11 | Korea Institute of Industrial Technology | Composé époxy présentant un groupe alcoxysilyle, composition et matériau durci le comprenant, son utilisation et procédé de préparation du composé époxy présentant un groupe alcoxysilyle |
| KR101863111B1 (ko) | 2012-07-06 | 2018-06-01 | 한국생산기술연구원 | 노볼락계 에폭시 화합물, 이의 제조 방법, 이를 포함하는 조성물, 경화물 및 이의 용도 |
| JP6315205B2 (ja) * | 2012-10-25 | 2018-04-25 | 日産化学工業株式会社 | エポキシ化合物の製造方法 |
| JP6384678B2 (ja) * | 2013-10-21 | 2018-09-05 | 日産化学株式会社 | ポジ型感光性樹脂組成物 |
| KR20150068899A (ko) * | 2013-12-12 | 2015-06-22 | 제이엔씨 주식회사 | 포지티브형 감광성 조성물 |
| ES2632783T3 (es) | 2014-12-19 | 2017-09-15 | Evonik Degussa Gmbh | Sistemas de redes de cubierta para láminas de encapsulación que comprenden compuestos de bis-(alquenilamidas) |
| CN104892586B (zh) * | 2015-05-31 | 2017-05-10 | 黄山华惠科技有限公司 | 制备异氰脲酸三缩水甘油酯的新方法 |
| KR20190056088A (ko) * | 2017-11-16 | 2019-05-24 | 롬엔드하스전자재료코리아유한회사 | 감광성 수지 조성물 및 이로부터 제조된 경화막 |
| KR102232340B1 (ko) | 2019-11-15 | 2021-03-26 | 한국생산기술연구원 | 알콕시실릴기를 갖는 에폭시 수지의 조성물 및 이의 복합체 |
| CN114945611A (zh) * | 2020-02-03 | 2022-08-26 | 太阳油墨制造株式会社 | 固化性组合物、其干膜和固化物 |
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- 2011-01-19 CN CN201180007042.2A patent/CN102725691B/zh active Active
- 2011-01-19 JP JP2011551818A patent/JP5673963B2/ja active Active
- 2011-01-19 WO PCT/JP2011/050854 patent/WO2011093188A1/fr active Application Filing
- 2011-01-19 EP EP11736902.5A patent/EP2530524B1/fr active Active
- 2011-01-19 KR KR1020127021815A patent/KR101852523B1/ko active IP Right Grant
- 2011-01-19 US US13/574,938 patent/US8722311B2/en not_active Expired - Fee Related
- 2011-01-25 TW TW100102644A patent/TWI548943B/zh active
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| JPH08325481A (ja) * | 1994-11-28 | 1996-12-10 | Nissan Chem Ind Ltd | 粉体塗料用樹脂組成物 |
| WO2003029898A1 (fr) * | 2001-09-27 | 2003-04-10 | Clariant International Ltd. | Composition de resine photosensible |
| JP2006154779A (ja) * | 2004-10-29 | 2006-06-15 | Jsr Corp | ポジ型感光性絶縁樹脂組成物およびその硬化物 |
| JP2008007782A (ja) * | 2006-06-27 | 2008-01-17 | Lumination Llc | オプトエレクトロニックデバイス |
| JP2008065303A (ja) * | 2006-08-10 | 2008-03-21 | Shin Etsu Chem Co Ltd | レジスト下層膜材料及びパターン形成方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210052452A (ko) | 2018-08-30 | 2021-05-10 | 닛산 가가쿠 가부시키가이샤 | 네가티브형 감광성 수지조성물 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011093188A1 (fr) | 2011-08-04 |
| US8722311B2 (en) | 2014-05-13 |
| JPWO2011093188A1 (ja) | 2013-06-06 |
| CN102725691B (zh) | 2014-06-11 |
| CN102725691A (zh) | 2012-10-10 |
| US20120292487A1 (en) | 2012-11-22 |
| TW201144944A (en) | 2011-12-16 |
| EP2530524A1 (fr) | 2012-12-05 |
| KR20120127609A (ko) | 2012-11-22 |
| KR101852523B1 (ko) | 2018-04-27 |
| TWI548943B (zh) | 2016-09-11 |
| EP2530524A4 (fr) | 2015-03-04 |
| EP2530524B1 (fr) | 2019-05-29 |
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