JP5671317B2 - 貫通電極基板及びその製造方法 - Google Patents

貫通電極基板及びその製造方法 Download PDF

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JP5671317B2
JP5671317B2 JP2010272499A JP2010272499A JP5671317B2 JP 5671317 B2 JP5671317 B2 JP 5671317B2 JP 2010272499 A JP2010272499 A JP 2010272499A JP 2010272499 A JP2010272499 A JP 2010272499A JP 5671317 B2 JP5671317 B2 JP 5671317B2
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substrate
plating layer
plating
hole
layer
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JP2010272499A
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Japanese (ja)
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JP2012124253A (ja
JP2012124253A5 (enrdf_load_stackoverflow
Inventor
手島 隆行
隆行 手島
小野 武夫
武夫 小野
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Canon Inc
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Canon Inc
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2010272499A 2010-12-07 2010-12-07 貫通電極基板及びその製造方法 Expired - Fee Related JP5671317B2 (ja)

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JP2010272499A JP5671317B2 (ja) 2010-12-07 2010-12-07 貫通電極基板及びその製造方法

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JP2010272499A JP5671317B2 (ja) 2010-12-07 2010-12-07 貫通電極基板及びその製造方法

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JP2012124253A JP2012124253A (ja) 2012-06-28
JP2012124253A5 JP2012124253A5 (enrdf_load_stackoverflow) 2014-01-30
JP5671317B2 true JP5671317B2 (ja) 2015-02-18

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JP2010272499A Expired - Fee Related JP5671317B2 (ja) 2010-12-07 2010-12-07 貫通電極基板及びその製造方法

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102178158B1 (ko) * 2018-11-26 2020-11-12 동아대학교 산학협력단 관통공이 매립된 Si 기판의 제조방법
WO2022138151A1 (ja) * 2020-12-23 2022-06-30 富士フイルム株式会社 金属充填微細構造体及び金属充填微細構造体の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4153328B2 (ja) * 2003-02-25 2008-09-24 日本シイエムケイ株式会社 多層プリント配線板の製造方法
JP4800585B2 (ja) * 2004-03-30 2011-10-26 ルネサスエレクトロニクス株式会社 貫通電極の製造方法、シリコンスペーサーの製造方法
JP2007005404A (ja) * 2005-06-21 2007-01-11 Matsushita Electric Works Ltd 半導体基板への貫通配線の形成方法
JP2007067031A (ja) * 2005-08-30 2007-03-15 Tdk Corp 配線基板の製造方法
JP4755545B2 (ja) * 2006-07-11 2011-08-24 新光電気工業株式会社 基板の製造方法

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