JP5669672B2 - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
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- JP5669672B2 JP5669672B2 JP2011128368A JP2011128368A JP5669672B2 JP 5669672 B2 JP5669672 B2 JP 5669672B2 JP 2011128368 A JP2011128368 A JP 2011128368A JP 2011128368 A JP2011128368 A JP 2011128368A JP 5669672 B2 JP5669672 B2 JP 5669672B2
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- quantum well
- semiconductor light
- light emitting
- layer
- emitting device
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- 239000004065 semiconductor Substances 0.000 title claims description 41
- 150000001875 compounds Chemical class 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 14
- 238000012216 screening Methods 0.000 description 13
- 239000013078 crystal Substances 0.000 description 12
- 238000005253 cladding Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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Description
(式(1)において、hcは臨界膜厚、aeは量子井戸層の格子定数、asは基板の格子定数、fは格子不整合の絶対値の最大値(=as−ae)/as)、νはポアソン比(弾性スティフネス係数との関係はC11/(C11+C12))を表す。J. W. Matthews and A. E. Blackeslee, J.Cryst. Growth, 27, 118 (1974)参照)
Claims (1)
- 圧縮歪みを有する量子井戸層を含む活性層を備えた化合物半導体からなる半導体発光素子であって、
スーパールミネッセントダイオードであり、
前記量子井戸層の総膜厚が当該量子井戸層の臨界膜厚よりも大きく、かつ前記量子井戸層の格子不整合が1.0%以上2.5%未満であることを特徴とする半導体発光素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011128368A JP5669672B2 (ja) | 2011-06-08 | 2011-06-08 | 半導体発光素子 |
Applications Claiming Priority (1)
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JP2011128368A JP5669672B2 (ja) | 2011-06-08 | 2011-06-08 | 半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
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JP2012256685A JP2012256685A (ja) | 2012-12-27 |
JP5669672B2 true JP5669672B2 (ja) | 2015-02-12 |
Family
ID=47528012
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JP2011128368A Active JP5669672B2 (ja) | 2011-06-08 | 2011-06-08 | 半導体発光素子 |
Country Status (1)
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JP (1) | JP5669672B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015060978A (ja) | 2013-09-19 | 2015-03-30 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08172216A (ja) * | 1994-12-16 | 1996-07-02 | Furukawa Electric Co Ltd:The | 歪量子井戸型半導体発光装置の製造方法 |
JPH09246592A (ja) * | 1996-03-12 | 1997-09-19 | Hitachi Ltd | 半導体光素子 |
JPH10256658A (ja) * | 1997-03-07 | 1998-09-25 | Nippon Telegr & Teleph Corp <Ntt> | 不純物添加歪多重量子井戸構造 |
JP2001144378A (ja) * | 1999-08-31 | 2001-05-25 | Sharp Corp | 化合物半導体発光素子及びその製造方法 |
JP2001320134A (ja) * | 2000-05-01 | 2001-11-16 | Ricoh Co Ltd | 半導体発光素子およびその製造方法並びに光送信モジュールおよび光送受信モジュールおよび光通信システムおよびコンピュータシステムおよびネットワークシステム |
JP4025227B2 (ja) * | 2002-03-29 | 2007-12-19 | 株式会社東芝 | 半導体積層基板および光半導体素子 |
WO2006075759A1 (ja) * | 2005-01-17 | 2006-07-20 | Anritsu Corporation | 広い光スペクトル発光特性を有する半導体光素子及びその製造方法並びにそれを用いる外部共振器型半導体レーザ |
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