JP5663651B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5663651B2
JP5663651B2 JP2013247593A JP2013247593A JP5663651B2 JP 5663651 B2 JP5663651 B2 JP 5663651B2 JP 2013247593 A JP2013247593 A JP 2013247593A JP 2013247593 A JP2013247593 A JP 2013247593A JP 5663651 B2 JP5663651 B2 JP 5663651B2
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JP
Japan
Prior art keywords
film
insulating film
region
light
shielding layer
Prior art date
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Expired - Lifetime
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JP2013247593A
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English (en)
Japanese (ja)
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JP2014078023A5 (enExample
JP2014078023A (ja
Inventor
柴田　寛
寛 柴田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2013247593A priority Critical patent/JP5663651B2/ja
Publication of JP2014078023A publication Critical patent/JP2014078023A/ja
Publication of JP2014078023A5 publication Critical patent/JP2014078023A5/ja
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Publication of JP5663651B2 publication Critical patent/JP5663651B2/ja
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Expired - Lifetime legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2013247593A 2013-11-29 2013-11-29 半導体装置 Expired - Lifetime JP5663651B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013247593A JP5663651B2 (ja) 2013-11-29 2013-11-29 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013247593A JP5663651B2 (ja) 2013-11-29 2013-11-29 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2013036550A Division JP5600764B2 (ja) 2013-02-27 2013-02-27 電気光学装置

Publications (3)

Publication Number Publication Date
JP2014078023A JP2014078023A (ja) 2014-05-01
JP2014078023A5 JP2014078023A5 (enExample) 2014-08-07
JP5663651B2 true JP5663651B2 (ja) 2015-02-04

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ID=50783314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013247593A Expired - Lifetime JP5663651B2 (ja) 2013-11-29 2013-11-29 半導体装置

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JP (1) JP5663651B2 (enExample)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3070062B2 (ja) * 1990-03-29 2000-07-24 ソニー株式会社 液晶表示装置及びその製造方法
JPH04283729A (ja) * 1991-03-13 1992-10-08 Sharp Corp アクティブマトリクス表示装置
JPH05173183A (ja) * 1991-12-19 1993-07-13 Sony Corp 液晶表示装置
JP3380638B2 (ja) * 1994-12-27 2003-02-24 大阪瓦斯株式会社 液晶パネルの製造方法
JP3708637B2 (ja) * 1996-07-15 2005-10-19 株式会社半導体エネルギー研究所 液晶表示装置
WO1998009191A1 (fr) * 1996-08-29 1998-03-05 Seiko Epson Corporation Affichage a cristaux liquides et son procede de production
JP3782194B2 (ja) * 1997-02-28 2006-06-07 株式会社東芝 アクティブマトリクス型液晶表示装置
JPH10268300A (ja) * 1997-03-21 1998-10-09 Sony Corp 反射型ゲストホスト液晶表示装置
JP3711781B2 (ja) * 1999-03-12 2005-11-02 セイコーエプソン株式会社 電気光学装置及びその製造方法
JP3332083B2 (ja) * 1999-04-16 2002-10-07 日本電気株式会社 液晶表示装置
JP3503685B2 (ja) * 1999-08-30 2004-03-08 日本電気株式会社 液晶表示装置及びその製造方法
JP2001066586A (ja) * 1999-08-31 2001-03-16 Optrex Corp 液晶表示装置

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Publication number Publication date
JP2014078023A (ja) 2014-05-01

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