JP5663507B2 - ペリクルの製造方法 - Google Patents
ペリクルの製造方法 Download PDFInfo
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- JP5663507B2 JP5663507B2 JP2012031621A JP2012031621A JP5663507B2 JP 5663507 B2 JP5663507 B2 JP 5663507B2 JP 2012031621 A JP2012031621 A JP 2012031621A JP 2012031621 A JP2012031621 A JP 2012031621A JP 5663507 B2 JP5663507 B2 JP 5663507B2
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- pellicle
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- pellicle frame
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Laser Beam Processing (AREA)
Description
Class10のクリーンルーム12において、図1に示すような形状のペリクル1を製作した。製作したペリクル1は、黒色アルマイト処理を施したアルミニウム合金製のペリクルフレーム2を用いたもので、外寸904.5×750mm、内寸894.5×736mm、高さは厚さ1.3mmのマスク粘着層8を含めて7mm、角部は外寸R6、内寸R2であった。
Claims (7)
- ペリクル膜が貼付けられているペリクルフレームの表面に、波長500〜11000nmのレーザー光を照射して個体情報の加工をする際、前記ペリクル膜が略垂直で前記個体情報を加工する加工面が下側となるように前記ペリクルフレームを配置するとともに、前記レーザー光を略垂直上方に出射するレーザー加工機を収納しつつ排気手段が接続された排気フードの開口部が上方から下方への垂直な吸引気流を流すように前記加工面でのレーザー光照射部位に向いて配置され、前記開口部を通過する前記レーザー光の照射部位を吸引排気することを特徴とするペリクルの製造方法。
- 前記個体情報が、製造番号、型式、製造者名、及び品番から選ばれる少なくとも一つを示すことを特徴とする請求項1に記載のペリクルの製造方法。
- 前記個体情報が、バーコードであることを特徴とする請求項1または2に記載のペリクルの製造方法。
- 前記加工が、刻印加工であることを特徴とする請求項1〜3の何れかに記載のペリクルの製造方法。
- 前記刻印加工の深さが、前記ペリクルフレームの表面を基準として、最大でも0.05mmであることを特徴とする請求項4に記載のペリクルの製造方法。
- 前記ペリクルフレームまたはその表面皮膜に含有される染料を脱色または退色させ変色させることで前記加工がされることを特徴とする請求項1〜5の何れかに記載のペリクルの製造方法。
- 請求項1〜6の何れかに記載の製造方法で製造されていることを特徴とするペリクル。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012031621A JP5663507B2 (ja) | 2012-02-16 | 2012-02-16 | ペリクルの製造方法 |
KR1020120127575A KR102018067B1 (ko) | 2012-02-16 | 2012-11-12 | 펠리클의 제조 방법 |
TW102104945A TWI484288B (zh) | 2012-02-16 | 2013-02-07 | 防塵薄膜組件的製造方法 |
CN201310049914.2A CN103257522B (zh) | 2012-02-16 | 2013-02-07 | 防尘薄膜组件的制造方法 |
HK13111144.7A HK1183943A1 (zh) | 2012-02-16 | 2013-09-30 | 防塵薄膜組件的製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012031621A JP5663507B2 (ja) | 2012-02-16 | 2012-02-16 | ペリクルの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013167795A JP2013167795A (ja) | 2013-08-29 |
JP5663507B2 true JP5663507B2 (ja) | 2015-02-04 |
Family
ID=48961519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012031621A Active JP5663507B2 (ja) | 2012-02-16 | 2012-02-16 | ペリクルの製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5663507B2 (ja) |
KR (1) | KR102018067B1 (ja) |
CN (1) | CN103257522B (ja) |
HK (1) | HK1183943A1 (ja) |
TW (1) | TWI484288B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102366806B1 (ko) * | 2015-05-13 | 2022-02-23 | 삼성전자주식회사 | 열 축적을 방지하는 펠리클 및 이를 포함하는 극자외선 리소그래피 장치 |
CN114995071A (zh) | 2018-10-29 | 2022-09-02 | 家登精密工业股份有限公司 | 光罩固持系统及提供光罩固持系统观察光罩的方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2877841B2 (ja) * | 1989-06-12 | 1999-04-05 | 大日本印刷株式会社 | エマルジョンマスク等の欠陥修正装置 |
JPH09192875A (ja) * | 1996-01-10 | 1997-07-29 | Nikon Corp | レーザ加工装置 |
JPH1099978A (ja) * | 1996-09-27 | 1998-04-21 | Hitachi Ltd | レーザー加工装置 |
JP3346205B2 (ja) * | 1996-12-13 | 2002-11-18 | 信越化学工業株式会社 | ペリクルの製造方法 |
JPH1184632A (ja) | 1997-09-12 | 1999-03-26 | Nikon Corp | ペリクルの管理装置、投影露光装置および投影露光方法 |
US6894766B1 (en) * | 2001-03-27 | 2005-05-17 | Dupont Photomasks, Inc. | Method for constructing a photomask assembly using an encoded mark |
JP5096040B2 (ja) * | 2007-05-16 | 2012-12-12 | 日東電工株式会社 | レーザー加工方法及びレーザー加工品 |
-
2012
- 2012-02-16 JP JP2012031621A patent/JP5663507B2/ja active Active
- 2012-11-12 KR KR1020120127575A patent/KR102018067B1/ko active IP Right Grant
-
2013
- 2013-02-07 TW TW102104945A patent/TWI484288B/zh active
- 2013-02-07 CN CN201310049914.2A patent/CN103257522B/zh active Active
- 2013-09-30 HK HK13111144.7A patent/HK1183943A1/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI484288B (zh) | 2015-05-11 |
KR20130094682A (ko) | 2013-08-26 |
KR102018067B1 (ko) | 2019-09-04 |
CN103257522A (zh) | 2013-08-21 |
CN103257522B (zh) | 2016-05-04 |
HK1183943A1 (zh) | 2014-01-10 |
TW201346433A (zh) | 2013-11-16 |
JP2013167795A (ja) | 2013-08-29 |
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