HK1183943A1 - 防塵薄膜組件的製造方法 - Google Patents

防塵薄膜組件的製造方法

Info

Publication number
HK1183943A1
HK1183943A1 HK13111144.7A HK13111144A HK1183943A1 HK 1183943 A1 HK1183943 A1 HK 1183943A1 HK 13111144 A HK13111144 A HK 13111144A HK 1183943 A1 HK1183943 A1 HK 1183943A1
Authority
HK
Hong Kong
Prior art keywords
dust
manufacturing
prevention film
film component
component
Prior art date
Application number
HK13111144.7A
Other languages
English (en)
Inventor
关原敏
Original Assignee
信越化學工業株式會社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 信越化學工業株式會社 filed Critical 信越化學工業株式會社
Publication of HK1183943A1 publication Critical patent/HK1183943A1/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Laser Beam Processing (AREA)
HK13111144.7A 2012-02-16 2013-09-30 防塵薄膜組件的製造方法 HK1183943A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012031621A JP5663507B2 (ja) 2012-02-16 2012-02-16 ペリクルの製造方法

Publications (1)

Publication Number Publication Date
HK1183943A1 true HK1183943A1 (zh) 2014-01-10

Family

ID=48961519

Family Applications (1)

Application Number Title Priority Date Filing Date
HK13111144.7A HK1183943A1 (zh) 2012-02-16 2013-09-30 防塵薄膜組件的製造方法

Country Status (5)

Country Link
JP (1) JP5663507B2 (zh)
KR (1) KR102018067B1 (zh)
CN (1) CN103257522B (zh)
HK (1) HK1183943A1 (zh)
TW (1) TWI484288B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102366806B1 (ko) * 2015-05-13 2022-02-23 삼성전자주식회사 열 축적을 방지하는 펠리클 및 이를 포함하는 극자외선 리소그래피 장치
KR102408849B1 (ko) 2018-10-29 2022-06-13 구뎅 프리시젼 인더스트리얼 코포레이션 리미티드 레티클 유지 시스템

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2877841B2 (ja) * 1989-06-12 1999-04-05 大日本印刷株式会社 エマルジョンマスク等の欠陥修正装置
JPH09192875A (ja) * 1996-01-10 1997-07-29 Nikon Corp レーザ加工装置
JPH1099978A (ja) * 1996-09-27 1998-04-21 Hitachi Ltd レーザー加工装置
JP3346205B2 (ja) * 1996-12-13 2002-11-18 信越化学工業株式会社 ペリクルの製造方法
JPH1184632A (ja) 1997-09-12 1999-03-26 Nikon Corp ペリクルの管理装置、投影露光装置および投影露光方法
US6894766B1 (en) * 2001-03-27 2005-05-17 Dupont Photomasks, Inc. Method for constructing a photomask assembly using an encoded mark
JP5096040B2 (ja) * 2007-05-16 2012-12-12 日東電工株式会社 レーザー加工方法及びレーザー加工品

Also Published As

Publication number Publication date
CN103257522A (zh) 2013-08-21
KR102018067B1 (ko) 2019-09-04
CN103257522B (zh) 2016-05-04
TWI484288B (zh) 2015-05-11
TW201346433A (zh) 2013-11-16
KR20130094682A (ko) 2013-08-26
JP5663507B2 (ja) 2015-02-04
JP2013167795A (ja) 2013-08-29

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20220205