JP5657821B2 - 相変化メモリ装置 - Google Patents

相変化メモリ装置 Download PDF

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Publication number
JP5657821B2
JP5657821B2 JP2014052135A JP2014052135A JP5657821B2 JP 5657821 B2 JP5657821 B2 JP 5657821B2 JP 2014052135 A JP2014052135 A JP 2014052135A JP 2014052135 A JP2014052135 A JP 2014052135A JP 5657821 B2 JP5657821 B2 JP 5657821B2
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Japan
Prior art keywords
transistor
signal
phase change
write
circuit
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Expired - Fee Related
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JP2014052135A
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Japanese (ja)
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JP2014112460A (ja
JP2014112460A5 (OSRAM
Inventor
誠志 片桐
誠志 片桐
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PS4 Luxco SARL
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PS4 Luxco SARL
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JP2014052135A 2014-03-14 2014-03-14 相変化メモリ装置 Expired - Fee Related JP5657821B2 (ja)

Priority Applications (1)

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JP2014052135A JP5657821B2 (ja) 2014-03-14 2014-03-14 相変化メモリ装置

Applications Claiming Priority (1)

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JP2014052135A JP5657821B2 (ja) 2014-03-14 2014-03-14 相変化メモリ装置

Related Parent Applications (1)

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JP2007176044A Division JP5503102B2 (ja) 2007-07-04 2007-07-04 相変化メモリ装置

Publications (3)

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JP2014112460A JP2014112460A (ja) 2014-06-19
JP2014112460A5 JP2014112460A5 (OSRAM) 2014-08-07
JP5657821B2 true JP5657821B2 (ja) 2015-01-21

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JP2014052135A Expired - Fee Related JP5657821B2 (ja) 2014-03-14 2014-03-14 相変化メモリ装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9966123B2 (en) 2016-09-13 2018-05-08 Toshiba Memory Corporation Semiconductor memory device with write driver

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4322645B2 (ja) * 2003-11-28 2009-09-02 株式会社日立製作所 半導体集積回路装置
TW200527656A (en) * 2004-02-05 2005-08-16 Renesas Tech Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9966123B2 (en) 2016-09-13 2018-05-08 Toshiba Memory Corporation Semiconductor memory device with write driver

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Publication number Publication date
JP2014112460A (ja) 2014-06-19

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