JP5654348B2 - 放射線源の放射光を集めるための光束誘導光学集光器 - Google Patents
放射線源の放射光を集めるための光束誘導光学集光器 Download PDFInfo
- Publication number
- JP5654348B2 JP5654348B2 JP2010525245A JP2010525245A JP5654348B2 JP 5654348 B2 JP5654348 B2 JP 5654348B2 JP 2010525245 A JP2010525245 A JP 2010525245A JP 2010525245 A JP2010525245 A JP 2010525245A JP 5654348 B2 JP5654348 B2 JP 5654348B2
- Authority
- JP
- Japan
- Prior art keywords
- exposure apparatus
- projection exposure
- illumination
- concentrator
- facets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/09—Multifaceted or polygonal mirrors, e.g. polygonal scanning mirrors; Fresnel mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70083—Non-homogeneous intensity distribution in the mask plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/064—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements having a curved surface
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Lenses (AREA)
- Optical Elements Other Than Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US97412007P | 2007-09-21 | 2007-09-21 | |
| DE102007045396A DE102007045396A1 (de) | 2007-09-21 | 2007-09-21 | Bündelführender optischer Kollektor zur Erfassung der Emission einer Strahlungsquelle |
| US60/974,120 | 2007-09-21 | ||
| DE102007045396.7 | 2007-09-21 | ||
| PCT/EP2008/007756 WO2009036957A1 (en) | 2007-09-21 | 2008-09-17 | Bundle-guiding optical collector for collecting the emission of a radiation source |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010539716A JP2010539716A (ja) | 2010-12-16 |
| JP2010539716A5 JP2010539716A5 (enExample) | 2011-11-04 |
| JP5654348B2 true JP5654348B2 (ja) | 2015-01-14 |
Family
ID=40458599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010525245A Active JP5654348B2 (ja) | 2007-09-21 | 2008-09-17 | 放射線源の放射光を集めるための光束誘導光学集光器 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8934085B2 (enExample) |
| JP (1) | JP5654348B2 (enExample) |
| DE (1) | DE102007045396A1 (enExample) |
| WO (1) | WO2009036957A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009007487A1 (de) * | 2009-02-05 | 2010-08-12 | Zumtobel Lighting Gmbh | Verfahren zum Versehen einer Oberfläche, insbesondere einer optischen Oberfläche mit Facetten |
| DE102009013812A1 (de) * | 2009-03-18 | 2010-09-23 | Osram Gesellschaft mit beschränkter Haftung | Reflektor, Lichtquellenanordnung sowie Projektorgerät |
| DE102009047316A1 (de) | 2009-11-30 | 2010-12-23 | Carl Zeiss Smt Ag | Optische reflektierende Komponente zum Einsatz in einer Beleuchtungsoptik für eine Projektionsbelichtungsanlage der EUV-Mikrolithographie |
| DE102011076460A1 (de) * | 2011-05-25 | 2012-11-29 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik |
| US20130079629A1 (en) * | 2011-09-23 | 2013-03-28 | James U. Lemke | Passive, noninvasive tomography |
| US9448343B2 (en) * | 2013-03-15 | 2016-09-20 | Kla-Tencor Corporation | Segmented mirror apparatus for imaging and method of using the same |
| US9314980B2 (en) * | 2013-03-19 | 2016-04-19 | Goodrich Corporation | High correctability deformable mirror |
| DE102013206981A1 (de) * | 2013-04-18 | 2013-12-24 | Carl Zeiss Smt Gmbh | Facettenspiegel mit im Krümmungsradius einstellbaren Spiegel-Facetten und Verfahren hierzu |
| DE102013218131A1 (de) | 2013-09-11 | 2015-03-12 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik sowie Beleuchtungssystem für die EUV-Projektionslithographie |
| DE102014216801A1 (de) | 2014-08-25 | 2016-02-25 | Carl Zeiss Smt Gmbh | Facettenspiegel für eine Beleuchtungsoptik für die Projektionslithographie |
| DE102014217610A1 (de) * | 2014-09-03 | 2016-03-03 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Projektionslithografie |
| DE102014217608A1 (de) | 2014-09-03 | 2014-11-20 | Carl Zeiss Smt Gmbh | Verfahren zum Zuordnen einer zweiten Facette eines im Strahlengang zweiten facettierten Elements einer Beleuchtungsoptik |
| CN104483815B (zh) * | 2014-12-08 | 2016-05-11 | 上海核电装备焊接及检测工程技术研究中心(筹) | 一种射线源对中支撑装置及其固定射线源装置的方法 |
| DE102015201138A1 (de) | 2015-01-23 | 2016-01-28 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die EUV-Projektionslithografie |
| DE102015203469A1 (de) | 2015-02-26 | 2015-04-23 | Carl Zeiss Smt Gmbh | Verfahren zur Erzeugung einer gekrümmten optischen Spiegelfläche |
| DE102016215235A1 (de) | 2016-08-16 | 2017-06-22 | Carl Zeiss Smt Gmbh | Kollektor-Einrichtung und Strahlungsquellen-Modul |
| DE102019212017A1 (de) | 2019-08-09 | 2021-02-11 | Carl Zeiss Smt Gmbh | Optisches Beleuchtungssystem zur Führung von EUV-Strahlung |
| DE102020208665A1 (de) | 2020-07-10 | 2022-01-13 | Carl Zeiss Smt Gmbh | Optisches Beleuchtungssystem zur Führung von EUV-Strahlung |
| US12346029B2 (en) | 2021-05-05 | 2025-07-01 | Nikon Corporation | Curved reticle by mechanical and phase bending along orthogonal axes |
| DE102022207374A1 (de) | 2022-07-19 | 2024-01-25 | Carl Zeiss Smt Gmbh | EUV-Kollektor für eine EUV-Projektionsbelichtungsvorrichtung |
| JP2025523601A (ja) | 2022-06-28 | 2025-07-23 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Euv投影露光装置用のeuv集光器 |
| DE102022209573A1 (de) | 2022-09-13 | 2023-11-23 | Carl Zeiss Smt Gmbh | EUV-Kollektor zur Verwendung in einer EUV-Projektionsbelichtungsvorrichtung |
| DE102023206346A1 (de) | 2023-07-04 | 2024-05-02 | Carl Zeiss Smt Gmbh | EUV-Kollektor zur Verwendung in einer EUV-Projektionsbelichtungsvorrichtung |
| US20250258436A1 (en) * | 2024-02-09 | 2025-08-14 | Carl Zeiss Smt Gmbh | Euv collector for use in an euv projection exposure apparatus |
Family Cites Families (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5339346A (en) | 1993-05-20 | 1994-08-16 | At&T Bell Laboratories | Device fabrication entailing plasma-derived x-ray delineation |
| US6229595B1 (en) | 1995-05-12 | 2001-05-08 | The B. F. Goodrich Company | Lithography system and method with mask image enlargement |
| JPH1051020A (ja) | 1996-08-01 | 1998-02-20 | Hitachi Ltd | 集光集積型光発電装置 |
| JP3499089B2 (ja) * | 1996-08-06 | 2004-02-23 | シャープ株式会社 | 集光リフレクタ |
| JP4238390B2 (ja) * | 1998-02-27 | 2009-03-18 | 株式会社ニコン | 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法 |
| US6438199B1 (en) | 1998-05-05 | 2002-08-20 | Carl-Zeiss-Stiftung | Illumination system particularly for microlithography |
| EP0955641B1 (de) * | 1998-05-05 | 2004-04-28 | Carl Zeiss | Beleuchtungssystem insbesondere für die EUV-Lithographie |
| US7186983B2 (en) | 1998-05-05 | 2007-03-06 | Carl Zeiss Smt Ag | Illumination system particularly for microlithography |
| DE10100265A1 (de) * | 2001-01-08 | 2002-07-11 | Zeiss Carl | Beleuchtungssystem mit Rasterelementen unterschiedlicher Größe |
| JP2000098230A (ja) | 1998-09-22 | 2000-04-07 | Nikon Corp | 反射縮小結像光学系、該光学系を備えた露光装置および、該光学系を用いた露光方法 |
| JP2000098228A (ja) | 1998-09-21 | 2000-04-07 | Nikon Corp | 投影露光装置及び露光方法、並びに反射縮小投影光学系 |
| WO2002048796A2 (en) | 2000-12-12 | 2002-06-20 | Carl Zeiss Smt Ag | Projection system for euv lithography |
| EP1035445B1 (de) * | 1999-02-15 | 2007-01-31 | Carl Zeiss SMT AG | Mikrolithographie-Reduktionsobjektiveinrichtung sowie Projektionsbelichtungsanlage |
| US6600552B2 (en) * | 1999-02-15 | 2003-07-29 | Carl-Zeiss Smt Ag | Microlithography reduction objective and projection exposure apparatus |
| DE19931848A1 (de) | 1999-07-09 | 2001-01-11 | Zeiss Carl Fa | Astigmatische Komponenten zur Reduzierung des Wabenaspektverhältnisses bei EUV-Beleuchtungssystemen |
| WO2001009684A1 (de) * | 1999-07-30 | 2001-02-08 | Carl Zeiss | Steuerung der beleuchtungsverteilung in der austrittspupille eines euv-beleuchtungssystems |
| JP2001185480A (ja) | 1999-10-15 | 2001-07-06 | Nikon Corp | 投影光学系及び該光学系を備える投影露光装置 |
| TWI283798B (en) * | 2000-01-20 | 2007-07-11 | Asml Netherlands Bv | A microlithography projection apparatus |
| JP2002015979A (ja) | 2000-06-29 | 2002-01-18 | Nikon Corp | 投影光学系、露光装置及び露光方法 |
| DE10052289A1 (de) * | 2000-10-20 | 2002-04-25 | Zeiss Carl | 8-Spiegel-Mikrolithographie-Projektionsobjektiv |
| JP2004512552A (ja) | 2000-10-20 | 2004-04-22 | カール ツァイス シュティフトゥング トレイディング アズ カール ツァイス | 8反射鏡型マイクロリソグラフィ用投影光学系 |
| JP2004525398A (ja) | 2001-01-09 | 2004-08-19 | カール ツァイス エスエムテー アーゲー | Euvリソグラフィ用の投影系 |
| US6387723B1 (en) * | 2001-01-19 | 2002-05-14 | Silicon Light Machines | Reduced surface charging in silicon-based devices |
| JP4349550B2 (ja) | 2001-03-29 | 2009-10-21 | フジノン株式会社 | 反射型投映用光学系 |
| TW594043B (en) * | 2001-04-11 | 2004-06-21 | Matsushita Electric Industrial Co Ltd | Reflection type optical apparatus and photographing apparatus using the same, multi-wavelength photographing apparatus, monitoring apparatus for vehicle |
| JP2003045782A (ja) | 2001-07-31 | 2003-02-14 | Canon Inc | 反射型縮小投影光学系及びそれを用いた露光装置 |
| EP1321822A1 (en) * | 2001-12-21 | 2003-06-25 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1333260A3 (en) | 2002-01-31 | 2004-02-25 | Canon Kabushiki Kaisha | Phase measuring method and apparatus |
| JP3581689B2 (ja) | 2002-01-31 | 2004-10-27 | キヤノン株式会社 | 位相測定装置 |
| US20050207039A1 (en) * | 2002-02-01 | 2005-09-22 | Carl Zeiss Smt Ag | Optical element for forming an arc-shaped illumination field |
| JP2003233002A (ja) * | 2002-02-07 | 2003-08-22 | Canon Inc | 反射型投影光学系、露光装置及びデバイス製造方法 |
| JP2004029625A (ja) | 2002-06-28 | 2004-01-29 | Nikon Corp | 投影光学系、露光装置及び露光方法 |
| JP3938040B2 (ja) | 2002-12-27 | 2007-06-27 | キヤノン株式会社 | 反射型投影光学系、露光装置及びデバイス製造方法 |
| JP2004252358A (ja) * | 2003-02-21 | 2004-09-09 | Canon Inc | 反射型投影光学系及び露光装置 |
| JP2004252363A (ja) * | 2003-02-21 | 2004-09-09 | Canon Inc | 反射型投影光学系 |
| DE10317667A1 (de) | 2003-04-17 | 2004-11-18 | Carl Zeiss Smt Ag | Optisches Element für ein Beleuchtungssystem |
| JP2005055553A (ja) | 2003-08-08 | 2005-03-03 | Nikon Corp | ミラー、温度調整機構付きミラー及び露光装置 |
| JP2005172988A (ja) | 2003-12-09 | 2005-06-30 | Nikon Corp | 投影光学系および該投影光学系を備えた露光装置 |
| DE10359576A1 (de) | 2003-12-18 | 2005-07-28 | Carl Zeiss Smt Ag | Verfahren zur Herstellung einer optischen Einheit |
| US7114818B2 (en) * | 2004-05-06 | 2006-10-03 | Olympus Corporation | Optical system, and electronic equipment that incorporates the same |
| EP1812935A2 (en) * | 2004-11-09 | 2007-08-01 | Carl Zeiss SMT AG | High-precision optical surface prepared by sagging from a masterpiece |
| JP2008524662A (ja) * | 2004-12-22 | 2008-07-10 | カール・ツアイス・レーザー・オプティクス・ゲーエムベーハー | 線ビームを生成するための光学照射系 |
| DE102005042005A1 (de) * | 2004-12-23 | 2006-07-06 | Carl Zeiss Smt Ag | Hochaperturiges Objektiv mit obskurierter Pupille |
| TWI308644B (en) | 2004-12-23 | 2009-04-11 | Zeiss Carl Smt Ag | Hochaperturiges objektiv mlt obskurierter pupille |
| JP5366405B2 (ja) | 2004-12-23 | 2013-12-11 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 遮光瞳を有する高開口率対物光学系 |
| US7405809B2 (en) * | 2005-03-21 | 2008-07-29 | Carl Zeiss Smt Ag | Illumination system particularly for microlithography |
| EP1924888B1 (en) | 2005-09-13 | 2013-07-24 | Carl Zeiss SMT GmbH | Microlithography projection optical system, method for manufacturing a device and method to design an optical surface |
| EP1938150B1 (de) | 2005-10-18 | 2011-03-23 | Carl Zeiss SMT GmbH | Kollektor für beleuchtungssysteme mit einer wellenlänge </= 193 nm |
| JP2007234717A (ja) * | 2006-02-28 | 2007-09-13 | Nikon Corp | 露光装置 |
| JP5479890B2 (ja) * | 2006-04-07 | 2014-04-23 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影光学システム、装置、及び製造方法 |
-
2007
- 2007-09-21 DE DE102007045396A patent/DE102007045396A1/de not_active Withdrawn
-
2008
- 2008-09-17 JP JP2010525245A patent/JP5654348B2/ja active Active
- 2008-09-17 WO PCT/EP2008/007756 patent/WO2009036957A1/en not_active Ceased
-
2010
- 2010-03-17 US US12/726,081 patent/US8934085B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| DE102007045396A1 (de) | 2009-04-23 |
| WO2009036957A1 (en) | 2009-03-26 |
| US20100231882A1 (en) | 2010-09-16 |
| JP2010539716A (ja) | 2010-12-16 |
| US8934085B2 (en) | 2015-01-13 |
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