JP5646950B2 - マスク材組成物、および不純物拡散層の形成方法 - Google Patents
マスク材組成物、および不純物拡散層の形成方法 Download PDFInfo
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- JP5646950B2 JP5646950B2 JP2010237107A JP2010237107A JP5646950B2 JP 5646950 B2 JP5646950 B2 JP 5646950B2 JP 2010237107 A JP2010237107 A JP 2010237107A JP 2010237107 A JP2010237107 A JP 2010237107A JP 5646950 B2 JP5646950 B2 JP 5646950B2
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- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- OSUDPWSWWIRWNH-UHFFFAOYSA-N CC(C)(C)[N+](c1ccccc1)(N=[IH])[O-] Chemical compound CC(C)(C)[N+](c1ccccc1)(N=[IH])[O-] OSUDPWSWWIRWNH-UHFFFAOYSA-N 0.000 description 1
- 0 CC*c1ccccc1 Chemical compound CC*c1ccccc1 0.000 description 1
- HXDOZKJGKXYMEW-UHFFFAOYSA-N CCc(cc1)ccc1O Chemical compound CCc(cc1)ccc1O HXDOZKJGKXYMEW-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- IEPRKVQEAMIZSS-UHFFFAOYSA-N Di-Et ester-Fumaric acid Natural products CCOC(=O)C=CC(=O)OCC IEPRKVQEAMIZSS-UHFFFAOYSA-N 0.000 description 1
- IEPRKVQEAMIZSS-WAYWQWQTSA-N Diethyl maleate Chemical compound CCOC(=O)\C=C/C(=O)OCC IEPRKVQEAMIZSS-WAYWQWQTSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- 101000594702 Homo sapiens Bisphosphoglycerate mutase Proteins 0.000 description 1
- IJMWOMHMDSDKGK-UHFFFAOYSA-N Isopropyl propionate Chemical compound CCC(=O)OC(C)C IJMWOMHMDSDKGK-UHFFFAOYSA-N 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- OHBRHBQMHLEELN-UHFFFAOYSA-N acetic acid;1-butoxybutane Chemical compound CC(O)=O.CCCCOCCCC OHBRHBQMHLEELN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229940007550 benzyl acetate Drugs 0.000 description 1
- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 description 1
- 125000000480 butynyl group Chemical group [*]C#CC([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 125000006165 cyclic alkyl group Chemical group 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- WYACBZDAHNBPPB-UHFFFAOYSA-N diethyl oxalate Chemical compound CCOC(=O)C(=O)OCC WYACBZDAHNBPPB-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- UYAAVKFHBMJOJZ-UHFFFAOYSA-N diimidazo[1,3-b:1',3'-e]pyrazine-5,10-dione Chemical compound O=C1C2=CN=CN2C(=O)C2=CN=CN12 UYAAVKFHBMJOJZ-UHFFFAOYSA-N 0.000 description 1
- 208000002173 dizziness Diseases 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- OEBTVDCNDKSOCC-UHFFFAOYSA-N ethyl 3-methoxypropanoate;methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC.CCOC(=O)CCOC OEBTVDCNDKSOCC-UHFFFAOYSA-N 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- 229940093476 ethylene glycol Drugs 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229940117955 isoamyl acetate Drugs 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- GQKZBCPTCWJTAS-UHFFFAOYSA-N methoxymethylbenzene Chemical compound COCC1=CC=CC=C1 GQKZBCPTCWJTAS-UHFFFAOYSA-N 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- XDGFORICQHRPMI-UHFFFAOYSA-N propan-2-yl 3-methoxypropanoate Chemical compound COCCC(=O)OC(C)C XDGFORICQHRPMI-UHFFFAOYSA-N 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- JCMFJIHDWDKYIL-UHFFFAOYSA-N propyl 3-methoxypropanoate Chemical compound CCCOC(=O)CCOC JCMFJIHDWDKYIL-UHFFFAOYSA-N 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 229960004063 propylene glycol Drugs 0.000 description 1
- 229940116423 propylene glycol diacetate Drugs 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- FHYUCVWDMABHHH-UHFFFAOYSA-N toluene;1,2-xylene Chemical group CC1=CC=CC=C1.CC1=CC=CC=C1C FHYUCVWDMABHHH-UHFFFAOYSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
シロキサン樹脂(A)は、マスク材本体を構成する樹脂である。本実施形態に係るマスク材組成物は、シロキサン樹脂(A)として、下記式(a1)で表される構成単位(以下、適宜この構成単位を構成単位a1と称する)を含むシロキサン樹脂(A1)を含有する。
溶剤(B)は、シロキサン樹脂(A)を溶解できるものであればよい。溶剤(B)の具体例としては、メタノール、エタノール、イソプロピルアルコール、ブタノール等のアルコール類、エチレングリコール、ジエチレングリコール、トリエチレングリコール、プロピレングリコール、ジプロピレングリコール、トリプロピレングリコール等のグリコール類、エチレングリコールモノメチルエーテル、エチレングリコールジメチルエーテル、エチレングリコールモノエチルエーテル、エチレングリコールジエチルエーテル、エチレングリコールモノプロピルエーテル、エチレングリコールジプロピルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールモノエチルエーテル、ジエチレングリコールジエチルエーテル、トリエチレングリコールモノメチルエーテル、トリエチレングリコールジメチルエーテル、プロピレングリコールモノメチルエーテル、プロピレングリコールジメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールジエチルエーテル、プロピレングリコールモノプロピルエーテル、プロピレングリコールジプロピルエーテル、ジプロピレングリコールモノメチルエーテル、ジプロピレングリコールジメチルエーテル、ジプロピレングリコールモノエチルエーテル、ジプロピレングリコールジエチルエーテル、トリプロピレングリコールモノメチルエーテル、トリプロピレングリコールジメチルエーテルなどのグリコール誘導体類、アセトン、メチルエチルケトン、メチルイソブチルケトン、メチルアミルケトン、3-ペンタノン、シクロヘキサノン等のケトン類、酢酸メチル、酢酸エチル、酢酸ブチル、酢酸ヘキシル、酢酸オクチル、酢酸2-エチルヘキシル、酢酸3-メトキシブチル、エチレングリコールモノメチルエーテルアセテート、プロピレングリコールモノメチルエーテルアセテート、ジエチレングリコールモノメチルエーテルアセテート、ジエチレングリコールモノブチルエーテルアセテート等のエステル類、ジメチルホルムアミド、ジメチルアセトアミド、ジメチルスルホキシド、N-メチル‐2-ピロリドン、γ-ブチロラクトン、炭酸エチレン、炭酸プロピレン等の極性溶剤、ベンゼン、トルエン、キシレン等の芳香族炭化水素類、ヘキサン、ヘプタン、オクタン、シクロヘキサン等の脂肪族炭化水素類などが挙げられる。これらは単独で用いてもよく、2種以上を組み合わせて用いてもよい。
マスク材組成物中に含まれる金属不純物の濃度は、約500ppb以下であることが好ましく、約100ppb以下であることがより好ましい。また、マスク材組成物は、その他の添加剤として一般的な界面活性剤や増粘剤などを含有してもよい。界面活性剤としては、例えば、アニオン系、カチオン系、ノニオン系等の化合物が挙げられ、金属不純物の汚染リスクを低減する点からノニオン系界面活性剤が好ましい。
図1を参照して、不純物拡散層の形成方法と、これにより不純物拡散層が形成された半導体基板を備えた太陽電池の製造方法の一例について説明する。図1(A)〜(F)は、実施形態に係る不純物拡散層の形成方法を含む太陽電池の製造方法を説明するための工程断面図である。
(マスク材組成物の作成)
参考例1:シルセスキオキサン樹脂A1−2a(質量平均分子量7500)を、プロピレングリコールモノメチルエーテルアセテート(PGMEA)に溶解し、シルセスキオキサン樹脂A1−2aが最終生成物であるマスク材組成物の全質量に対して約30質量%となるマスク材組成物を作成した。
参考例2:シルセスキオキサン樹脂A1−2b(質量平均分子量7000)を、プロピレングリコールモノメチルエーテルアセテート(PGMEA)に溶解し、シルセスキオキサン樹脂A1−2bがマスク材組成物の全質量に対して約30質量%となるマスク材組成物を作成した。
参考例3:構成単位a1−1からなるシルセスキオキサン樹脂(質量平均分子量3500)を、プロピレングリコールモノメチルエーテルアセテート(PGMEA)に溶解し、このシルセスキオキサン樹脂がマスク材組成物の全質量に対して約30質量%となるマスク材組成物を作成した。
参考例4:構成単位a1−4からなるシルセスキオキサン樹脂(質量平均分子量4000)を、プロピレングリコールモノメチルエーテルアセテート(PGMEA)に溶解し、このシルセスキオキサン樹脂がマスク材組成物の全質量に対して約30質量%となるマスク材組成物を作成した。
比較例1:メチルシルセスキオキサン樹脂(質量平均分子量2000)を、プロピレングリコールモノメチルエーテルアセテート(PGMEA)に溶解し、メチルシルセスキオキサン樹脂がマスク材組成物の全質量に対して約30質量%となるマスク材組成物を作成した。
比較例2:下記式(a4)で表される構成単位からなるシロキサン樹脂(質量平均分子量2000)を、プロピレングリコールモノメチルエーテルアセテート(PGMEA)に溶解し、このシロキサン樹脂がマスク材組成物の全質量に対して約30質量%となるマスク材組成物を作成した。
参考例1〜4、比較例1、2のマスク材組成物を、公知のスピンコート法でN型のシリコンウェハーに塗布した。マスク材組成物の塗布後、各シリコンウェハーを100℃で1分間、さらに200℃で1分間プリベークした。プリベーク後のマスク材組成物の膜厚は約2μmであった。膜厚は、サーフェイスプロファイラー(DEKTAK社製)を用いて測定されたマスク材組成物の厚みの高低差から算出した。続いて、各シリコンウェハーを電気炉内に載置し、O2雰囲気下、600℃で30分間加熱してマスク材組成物を焼成した。これにより、各シリコンウェハーの表面にマスクが形成された。
光学顕微鏡を用いて、焼成後のマスク材組成物におけるクラック発生の有無を目視で評価した。評価は、クラック発生が見られなかった場合を「無」、クラック発生が見られた場合を「有」とした。各参考例、および各比較例の結果を表1に示す。
マスク性の評価として、シリコンウェハーにおける表面にマスクが形成された領域に対してP/N判定機を用いてP/N判定を実施した。また、マスク性の評価の参考として、半導体基板のシート抵抗値(Ω/sq.)を、シート抵抗測定器(VR−70(国際電気株式会社製))を用いて四探針法により測定した。各参考例、および各比較例の結果を表1に示す。
(マスク材組成物の作成)
表2の樹脂および溶剤の欄に示す成分および含有比にしたがって樹脂を溶剤に溶解し、実施例5,7〜11、比較例3,4、参考例6に係るマスク材組成物を作成した。当該欄において括弧内に示す数値が含有比である。各数値の単位は質量%であり、各成分の割合はマスク材組成物の全質量に対する割合である。
樹脂A:シルセスキオキサン樹脂A1−2a(質量平均分子量7500)
樹脂B:シルセスキオキサン樹脂A1−2b(質量平均分子量7000)
樹脂C:下記式(A1−2c)で表されるシルセスキオキサン樹脂(質量平均分子量5000)
樹脂F:上記式(a4)で表される構成単位からなるシロキサン樹脂(質量平均分子量2000)
樹脂G:メチルシルセスキオキサン樹脂(質量平均分子量2000)
樹脂H:下記式(A1−1a)で表されるシルセスキオキサン樹脂(質量平均分子量3000)
PGMEA:プロピレングリコールモノメチルエーテルアセテート
DPG:ジプロピレングリコール
DPGM:ジプロピレングリコールモノメチルエーテル
実施例5,7〜11、比較例3,4、参考例6のマスク材組成物を、インクジェット吐出機(MID−500C:武蔵エンジニアリング社製)を用いて6インチN型シリコンウェハー上に吐出して塗布した。射出周波数を8452Hzとした。解像度は360dpi×2160dpi、射出分解能は11.8μmであった。また、ステージ速度を100mm/s、ステージ温度を70℃とした。マスク材組成物の吐出後、各シリコンウェハーをホットプレート上に載置し、200℃で3分間乾燥させた。その後、上述したスピンコート法を用いた実施例の場合と同様にして、マスク材組成物をプリベーク、焼成し、各シリコンウェハーの表面にマスクを形成した。そして、ボロン含有不純物拡散剤をマスク上に塗布し、不純物拡散成分を熱拡散させた。熱拡散後、各シリコンウェハーから拡散剤およびマスクを剥離した。なお、マスク材組成物の印刷安定性としてインクジェットノズルの目詰まりのし難さを評価するためにマスクを5時間連続して形成した。
上述したスピンコート法を用いた実施例の場合と同様にして、クラック発生の有無を目視で評価した。各実施例、参考例および各比較例の結果を表2に示す。
上述したスピンコート法を用いた実施例の場合と同様にして、半導体基板のシート抵抗値(Ω/sq.)を測定した。各実施例、参考例および各比較例の結果を表2に示す。
マスク性の評価として、上述したスピンコート法を用いた実施例の場合と同様にして、P/N判定を実施した。また、マスク性の評価の参考として、上述したスピンコート法を用いた実施例の場合と同様にして、半導体基板のシート抵抗値(Ω/sq.)を測定した。各評価について、各実施例、参考例および各比較例の結果を表2に示す。
光学顕微鏡を用いて、5時間連続して形成したマスクにおける部分的な欠落、いわゆる「かすれ」の有無を評価した。評価は、かすれが見られなかった場合を「◎」、かすれが見られるが、その程度が不純物拡散層の形成に影響しない程度である場合を「○」、不純物拡散層の形成に影響する程度のかすれが見られた場合を「×」とした。なお、前記「不純物拡散層の形成に影響する程度」は、当業者が実験等によって適宜設定することができる。各実施例、参考例および各比較例の結果を表2に示す。
Claims (7)
- 前記シロキサン樹脂(A1)は、前記構成単位を含むシルセスキオキサン樹脂である請求項1に記載のマスク材組成物。
- 前記シロキサン樹脂(A1)は、前記構成単位のみからなるシルセスキオキサン樹脂である請求項1または2に記載のマスク材組成物。
- 前記シロキサン樹脂(A1)と前記溶剤(B)とのみからなる請求項1乃至4のいずれか1項に記載のマスク材組成物。
- 前記溶剤(B)は、沸点が100℃以上の有機溶剤(B1)を含有する請求項1乃至5のいずれか1項に記載のマスク材組成物。
- 半導体基板に、請求項1乃至6のいずれか1項に記載のマスク材組成物を選択的に塗布する工程と、
前記半導体基板に塗布された前記マスク材組成物をマスクとして、不純物拡散成分を前記半導体基板に選択的に塗布し、拡散させる拡散工程と、
を含むことを特徴とする不純物拡散層の形成方法。
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US12/939,875 US8372938B2 (en) | 2009-11-06 | 2010-11-04 | Mask material composition, method of forming impurity diffusion layer, and solar battery |
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