JP5642970B2 - クラックおよび／または表面欠陥密度が減少したエピタキシャル熱電膜を堆積させる方法および関連する装置 - Google Patents

クラックおよび／または表面欠陥密度が減少したエピタキシャル熱電膜を堆積させる方法および関連する装置 Download PDF

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JP5642970B2
JP5642970B2 JP2009548319A JP2009548319A JP5642970B2 JP 5642970 B2 JP5642970 B2 JP 5642970B2 JP 2009548319 A JP2009548319 A JP 2009548319A JP 2009548319 A JP2009548319 A JP 2009548319A JP 5642970 B2 JP5642970 B2 JP 5642970B2
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thermoelectric
film
substrate
thermoelectric film
growth surface
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JP2010518600A5 (enExample
JP2010518600A (ja
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ピアース，ジョナサン・エム
ヴァウド，ロバート・ピー
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ネクストリーム・サーマル・ソリューションズ，インコーポレイテッド
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2009548319A 2007-02-02 2008-02-01 クラックおよび／または表面欠陥密度が減少したエピタキシャル熱電膜を堆積させる方法および関連する装置 Expired - Fee Related JP5642970B2 (ja)

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Application Number Priority Date Filing Date Title
US88796407P 2007-02-02 2007-02-02
US60/887,964 2007-02-02
PCT/US2008/001395 WO2008097484A2 (en) 2007-02-02 2008-02-01 Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices

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JP2010518600A JP2010518600A (ja) 2010-05-27
JP2010518600A5 JP2010518600A5 (enExample) 2011-03-10
JP5642970B2 true JP5642970B2 (ja) 2014-12-17

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JP2009548319A Expired - Fee Related JP5642970B2 (ja) 2007-02-02 2008-02-01 クラックおよび／または表面欠陥密度が減少したエピタキシャル熱電膜を堆積させる方法および関連する装置

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US (1) US7804019B2 (enExample)
EP (3) EP2423991B1 (enExample)
JP (1) JP5642970B2 (enExample)
KR (1) KR101537359B1 (enExample)
CA (1) CA2676089A1 (enExample)
WO (1) WO2008097484A2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090199887A1 (en) * 2008-02-08 2009-08-13 North Carolina State University And Nextreme Thermal Solutions, Inc. Methods of forming thermoelectric devices including epitaxial thermoelectric elements of different conductivity types on a same substrate and related structures
US20090205696A1 (en) * 2008-02-15 2009-08-20 Nextreme Thermal Solutions, Inc. Thermoelectric Heat Pumps Providing Active Thermal Barriers and Related Devices and Methods
DE102009000333A1 (de) 2009-01-20 2010-07-22 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Thermoelektrisches Halbleiterbauelement
JP5750945B2 (ja) * 2010-11-15 2015-07-22 ヤマハ株式会社 熱電素子
US9070816B2 (en) * 2011-05-19 2015-06-30 Fuji Electric Co., Ltd. Thermoelectric conversion structure and method of manufacturing same
WO2012157369A1 (ja) * 2011-05-19 2012-11-22 富士電機株式会社 熱電変換構造体およびその製造方法
WO2013119293A2 (en) * 2011-11-22 2013-08-15 Research Triangle Institute Nanoscale, ultra-thin films for excellent thermoelectric figure of merit
KR101956278B1 (ko) 2011-12-30 2019-03-11 삼성전자주식회사 그래핀 함유 복합 적층체, 이를 포함하는 열전재료, 열전모듈과 열전 장치
US9190592B2 (en) * 2012-11-06 2015-11-17 Nextreme Thermal Solutions, Inc. Thin film thermoelectric devices having favorable crystal tilt
WO2015178929A1 (en) 2014-05-23 2015-11-26 Laird Durham, Inc. Thermoelectric heating/cooling devices including resistive heaters
KR102299362B1 (ko) * 2014-08-21 2021-09-08 삼성전자주식회사 경사진 c-plane 상의 4성분계 양자우물을 포함하는 그린광 발광소자
WO2017041221A1 (en) * 2015-09-08 2017-03-16 Shenzhen Xpectvision Technology Co., Ltd. Methods for making an x-ray detector
KR102382321B1 (ko) * 2016-02-01 2022-04-04 엘지이노텍 주식회사 열전 소자 및 이의 제조 방법
TWI785106B (zh) * 2018-08-28 2022-12-01 晶元光電股份有限公司 半導體裝置
US12382830B2 (en) * 2021-06-23 2025-08-05 The Johns Hopkins University Large area scalable fabrication methodologies for versatile thermoelectric device modules
TWI825886B (zh) * 2022-05-05 2023-12-11 環球晶圓股份有限公司 磊晶結構及其製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63226918A (ja) * 1987-03-16 1988-09-21 Shin Etsu Handotai Co Ltd 燐化砒化ガリウム混晶エピタキシヤルウエ−ハ
US4994408A (en) * 1989-02-06 1991-02-19 Motorola Inc. Epitaxial film growth using low pressure MOCVD
EP0437654A1 (de) * 1990-01-16 1991-07-24 Reinhard Dr. Dahlberg Thermoelement-Schenkel mit richtungsabhängiger Quantisierung der Ladungsträger
WO1998042033A1 (en) * 1997-03-17 1998-09-24 Massachusetts Institute Of Technology Si/SiGe SUPERLATTICE STRUCTURES FOR USE IN THERMOELECTRIC DEVICES
US6300150B1 (en) * 1997-03-31 2001-10-09 Research Triangle Institute Thin-film thermoelectric device and fabrication method of same
US7342169B2 (en) * 2001-10-05 2008-03-11 Nextreme Thermal Solutions Phonon-blocking, electron-transmitting low-dimensional structures
DE10230080B4 (de) * 2002-06-27 2008-12-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer thermoelektrischen Schichtenstruktur und Bauelemente mit einer thermoelektrischen Schichtenstruktur

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Publication number Publication date
WO2008097484A2 (en) 2008-08-14
CA2676089A1 (en) 2008-08-14
KR101537359B1 (ko) 2015-07-16
EP2423990B1 (en) 2013-04-17
EP2423991B1 (en) 2013-04-17
US20080185030A1 (en) 2008-08-07
EP2423990A1 (en) 2012-02-29
EP2109896B1 (en) 2013-04-10
US7804019B2 (en) 2010-09-28
WO2008097484A3 (en) 2009-08-06
EP2109896A2 (en) 2009-10-21
JP2010518600A (ja) 2010-05-27
KR20090129410A (ko) 2009-12-16
EP2423991A1 (en) 2012-02-29

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