JP2010518600A5 - - Google Patents
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- Publication number
- JP2010518600A5 JP2010518600A5 JP2009548319A JP2009548319A JP2010518600A5 JP 2010518600 A5 JP2010518600 A5 JP 2010518600A5 JP 2009548319 A JP2009548319 A JP 2009548319A JP 2009548319 A JP2009548319 A JP 2009548319A JP 2010518600 A5 JP2010518600 A5 JP 2010518600A5
- Authority
- JP
- Japan
- Prior art keywords
- thermoelectric
- thermoelectric film
- film
- growth surface
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US88796407P | 2007-02-02 | 2007-02-02 | |
| US60/887,964 | 2007-02-02 | ||
| PCT/US2008/001395 WO2008097484A2 (en) | 2007-02-02 | 2008-02-01 | Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010518600A JP2010518600A (ja) | 2010-05-27 |
| JP2010518600A5 true JP2010518600A5 (enExample) | 2011-03-10 |
| JP5642970B2 JP5642970B2 (ja) | 2014-12-17 |
Family
ID=39494339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009548319A Expired - Fee Related JP5642970B2 (ja) | 2007-02-02 | 2008-02-01 | クラックおよび／または表面欠陥密度が減少したエピタキシャル熱電膜を堆積させる方法および関連する装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7804019B2 (enExample) |
| EP (3) | EP2423991B1 (enExample) |
| JP (1) | JP5642970B2 (enExample) |
| KR (1) | KR101537359B1 (enExample) |
| CA (1) | CA2676089A1 (enExample) |
| WO (1) | WO2008097484A2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090199887A1 (en) * | 2008-02-08 | 2009-08-13 | North Carolina State University And Nextreme Thermal Solutions, Inc. | Methods of forming thermoelectric devices including epitaxial thermoelectric elements of different conductivity types on a same substrate and related structures |
| US20090205696A1 (en) * | 2008-02-15 | 2009-08-20 | Nextreme Thermal Solutions, Inc. | Thermoelectric Heat Pumps Providing Active Thermal Barriers and Related Devices and Methods |
| DE102009000333A1 (de) | 2009-01-20 | 2010-07-22 | Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik | Thermoelektrisches Halbleiterbauelement |
| JP5750945B2 (ja) * | 2010-11-15 | 2015-07-22 | ヤマハ株式会社 | 熱電素子 |
| US9070816B2 (en) * | 2011-05-19 | 2015-06-30 | Fuji Electric Co., Ltd. | Thermoelectric conversion structure and method of manufacturing same |
| WO2012157369A1 (ja) * | 2011-05-19 | 2012-11-22 | 富士電機株式会社 | 熱電変換構造体およびその製造方法 |
| WO2013119293A2 (en) * | 2011-11-22 | 2013-08-15 | Research Triangle Institute | Nanoscale, ultra-thin films for excellent thermoelectric figure of merit |
| KR101956278B1 (ko) | 2011-12-30 | 2019-03-11 | 삼성전자주식회사 | 그래핀 함유 복합 적층체, 이를 포함하는 열전재료, 열전모듈과 열전 장치 |
| US9190592B2 (en) * | 2012-11-06 | 2015-11-17 | Nextreme Thermal Solutions, Inc. | Thin film thermoelectric devices having favorable crystal tilt |
| WO2015178929A1 (en) | 2014-05-23 | 2015-11-26 | Laird Durham, Inc. | Thermoelectric heating/cooling devices including resistive heaters |
| KR102299362B1 (ko) * | 2014-08-21 | 2021-09-08 | 삼성전자주식회사 | 경사진 c-plane 상의 4성분계 양자우물을 포함하는 그린광 발광소자 |
| WO2017041221A1 (en) * | 2015-09-08 | 2017-03-16 | Shenzhen Xpectvision Technology Co., Ltd. | Methods for making an x-ray detector |
| KR102382321B1 (ko) * | 2016-02-01 | 2022-04-04 | 엘지이노텍 주식회사 | 열전 소자 및 이의 제조 방법 |
| TWI785106B (zh) * | 2018-08-28 | 2022-12-01 | 晶元光電股份有限公司 | 半導體裝置 |
| US12382830B2 (en) * | 2021-06-23 | 2025-08-05 | The Johns Hopkins University | Large area scalable fabrication methodologies for versatile thermoelectric device modules |
| TWI825886B (zh) * | 2022-05-05 | 2023-12-11 | 環球晶圓股份有限公司 | 磊晶結構及其製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63226918A (ja) * | 1987-03-16 | 1988-09-21 | Shin Etsu Handotai Co Ltd | 燐化砒化ガリウム混晶エピタキシヤルウエ−ハ |
| US4994408A (en) * | 1989-02-06 | 1991-02-19 | Motorola Inc. | Epitaxial film growth using low pressure MOCVD |
| EP0437654A1 (de) * | 1990-01-16 | 1991-07-24 | Reinhard Dr. Dahlberg | Thermoelement-Schenkel mit richtungsabhängiger Quantisierung der Ladungsträger |
| WO1998042033A1 (en) * | 1997-03-17 | 1998-09-24 | Massachusetts Institute Of Technology | Si/SiGe SUPERLATTICE STRUCTURES FOR USE IN THERMOELECTRIC DEVICES |
| US6300150B1 (en) * | 1997-03-31 | 2001-10-09 | Research Triangle Institute | Thin-film thermoelectric device and fabrication method of same |
| US7342169B2 (en) * | 2001-10-05 | 2008-03-11 | Nextreme Thermal Solutions | Phonon-blocking, electron-transmitting low-dimensional structures |
| DE10230080B4 (de) * | 2002-06-27 | 2008-12-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer thermoelektrischen Schichtenstruktur und Bauelemente mit einer thermoelektrischen Schichtenstruktur |
-
2008
- 2008-02-01 WO PCT/US2008/001395 patent/WO2008097484A2/en not_active Ceased
- 2008-02-01 KR KR1020097018183A patent/KR101537359B1/ko not_active Expired - Fee Related
- 2008-02-01 EP EP11188081.1A patent/EP2423991B1/en not_active Not-in-force
- 2008-02-01 US US12/024,475 patent/US7804019B2/en active Active
- 2008-02-01 EP EP11188079.5A patent/EP2423990B1/en not_active Not-in-force
- 2008-02-01 EP EP08725085.8A patent/EP2109896B1/en not_active Not-in-force
- 2008-02-01 JP JP2009548319A patent/JP5642970B2/ja not_active Expired - Fee Related
- 2008-02-01 CA CA002676089A patent/CA2676089A1/en not_active Abandoned
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