JP5641202B2 - インターポーザ、モジュールおよびこれを備えた電子機器 - Google Patents
インターポーザ、モジュールおよびこれを備えた電子機器 Download PDFInfo
- Publication number
- JP5641202B2 JP5641202B2 JP2010130266A JP2010130266A JP5641202B2 JP 5641202 B2 JP5641202 B2 JP 5641202B2 JP 2010130266 A JP2010130266 A JP 2010130266A JP 2010130266 A JP2010130266 A JP 2010130266A JP 5641202 B2 JP5641202 B2 JP 5641202B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- interposer
- wiring
- semiconductor chip
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- 239000004065 semiconductor Substances 0.000 claims description 55
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- 239000010703 silicon Substances 0.000 claims description 9
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- 229910016570 AlCu Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
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- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 238000009623 Bosch process Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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- 230000000149 penetrating effect Effects 0.000 description 1
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- 238000004335 scaling law Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15158—Shape the die mounting substrate being other than a cuboid
- H01L2924/15159—Side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Variable-Direction Aerials And Aerial Arrays (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010130266A JP5641202B2 (ja) | 2010-06-07 | 2010-06-07 | インターポーザ、モジュールおよびこれを備えた電子機器 |
US12/847,240 US20110032685A1 (en) | 2009-08-07 | 2010-07-30 | Interposer, module, and electronics device including the same |
CN201010241077XA CN101996979B (zh) | 2009-08-07 | 2010-07-30 | 中介层、包括该中介层的模块及电子装置 |
TW99125503A TWI441307B (zh) | 2009-08-07 | 2010-07-30 | 內插器、模組及包括該內插器之電子裝置 |
EP20100008048 EP2284888A3 (en) | 2009-08-07 | 2010-08-02 | Interposer, module and electronics device including the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010130266A JP5641202B2 (ja) | 2010-06-07 | 2010-06-07 | インターポーザ、モジュールおよびこれを備えた電子機器 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011258654A JP2011258654A (ja) | 2011-12-22 |
JP2011258654A5 JP2011258654A5 (enrdf_load_stackoverflow) | 2013-07-11 |
JP5641202B2 true JP5641202B2 (ja) | 2014-12-17 |
Family
ID=45474558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010130266A Expired - Fee Related JP5641202B2 (ja) | 2009-08-07 | 2010-06-07 | インターポーザ、モジュールおよびこれを備えた電子機器 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5641202B2 (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6434494B2 (ja) * | 2014-03-10 | 2018-12-05 | 三菱重工業株式会社 | マルチチップモジュール、オンボードコンピュータ、センサインターフェース基板、及びマルチチップモジュール製造方法 |
WO2018057026A1 (en) | 2016-09-26 | 2018-03-29 | Nair Vijay K | Die with embedded communication cavity |
JP7367381B2 (ja) * | 2019-08-20 | 2023-10-24 | 富士通株式会社 | パッケージ基板及び電子機器 |
CN115298813A (zh) * | 2020-03-31 | 2022-11-04 | 索尼半导体解决方案公司 | 半导体装置 |
US20240145901A1 (en) * | 2021-03-11 | 2024-05-02 | Sony Semiconductor Solutions Corporation | Semiconductor device and electronic device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02106956A (ja) * | 1988-10-17 | 1990-04-19 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2002374028A (ja) * | 2001-06-15 | 2002-12-26 | Kyocera Corp | 配線基板 |
JP2004235602A (ja) * | 2002-12-06 | 2004-08-19 | Matsushita Electric Ind Co Ltd | 高周波回路とその製造方法 |
JP4979213B2 (ja) * | 2005-08-31 | 2012-07-18 | オンセミコンダクター・トレーディング・リミテッド | 回路基板、回路基板の製造方法および回路装置 |
-
2010
- 2010-06-07 JP JP2010130266A patent/JP5641202B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2011258654A (ja) | 2011-12-22 |
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