JP5623074B2 - 光電子半導体部品 - Google Patents

光電子半導体部品 Download PDF

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Publication number
JP5623074B2
JP5623074B2 JP2009506911A JP2009506911A JP5623074B2 JP 5623074 B2 JP5623074 B2 JP 5623074B2 JP 2009506911 A JP2009506911 A JP 2009506911A JP 2009506911 A JP2009506911 A JP 2009506911A JP 5623074 B2 JP5623074 B2 JP 5623074B2
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JP
Japan
Prior art keywords
layer
optoelectronic semiconductor
semiconductor component
useful
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009506911A
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English (en)
Japanese (ja)
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JP2009534859A (ja
JP2009534859A5 (enExample
Inventor
アイクラー、クリストフ
ミラー、シュテファン
シュトラウス、ウヴェ
ハール、ヴォルカー
サバティール、マティアス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2009534859A publication Critical patent/JP2009534859A/ja
Publication of JP2009534859A5 publication Critical patent/JP2009534859A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/862—Resonant cavity structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Lasers (AREA)
  • Photovoltaic Devices (AREA)
JP2009506911A 2006-04-25 2007-04-25 光電子半導体部品 Expired - Fee Related JP5623074B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
DE102006019109 2006-04-25
DE102006019109.9 2006-04-25
DE102006030252.4 2006-06-30
DE102006030252 2006-06-30
DE102006061167.5 2006-12-22
DE102006061167A DE102006061167A1 (de) 2006-04-25 2006-12-22 Optoelektronisches Halbleiterbauelement
PCT/DE2007/000740 WO2007121739A2 (de) 2006-04-25 2007-04-25 Optoelektronisches halbleiterbauelement

Publications (3)

Publication Number Publication Date
JP2009534859A JP2009534859A (ja) 2009-09-24
JP2009534859A5 JP2009534859A5 (enExample) 2011-06-02
JP5623074B2 true JP5623074B2 (ja) 2014-11-12

Family

ID=38461180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009506911A Expired - Fee Related JP5623074B2 (ja) 2006-04-25 2007-04-25 光電子半導体部品

Country Status (8)

Country Link
US (1) US8093607B2 (enExample)
EP (1) EP2011161A2 (enExample)
JP (1) JP5623074B2 (enExample)
KR (1) KR101370257B1 (enExample)
CN (1) CN101443923B (enExample)
DE (1) DE102006061167A1 (enExample)
TW (1) TWI354381B (enExample)
WO (1) WO2007121739A2 (enExample)

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DE102006007293B4 (de) * 2006-01-31 2023-04-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Quasi-Substratwafers und ein unter Verwendung eines solchen Quasi-Substratwafers hergestellter Halbleiterkörper
KR100872717B1 (ko) 2007-06-22 2008-12-05 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US9461201B2 (en) 2007-11-14 2016-10-04 Cree, Inc. Light emitting diode dielectric mirror
US7915629B2 (en) 2008-12-08 2011-03-29 Cree, Inc. Composite high reflectivity layer
DE102008019268A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US8692260B2 (en) 2008-09-26 2014-04-08 Soitec Method of forming a composite laser substrate
DE102009036621B4 (de) 2009-08-07 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
US9362459B2 (en) 2009-09-02 2016-06-07 United States Department Of Energy High reflectivity mirrors and method for making same
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US9105824B2 (en) 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
TWI535077B (zh) 2012-05-24 2016-05-21 台達電子工業股份有限公司 發光單元及其發光模組
KR102091831B1 (ko) * 2013-01-08 2020-03-20 서울반도체 주식회사 발광 다이오드 및 그 제조방법
US10658546B2 (en) 2015-01-21 2020-05-19 Cree, Inc. High efficiency LEDs and methods of manufacturing
US10693038B2 (en) * 2017-11-22 2020-06-23 Epistar Corporation Semiconductor device

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DK0507154T3 (da) * 1991-03-21 1996-06-10 Moeller Willy Ag Fremgangsmåde til bestemmelse af alkoholer og anvendelsen af en indretning til alkoholbestemmelse
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
DE19640594B4 (de) * 1996-10-01 2016-08-04 Osram Gmbh Bauelement
WO1998031055A1 (en) * 1997-01-09 1998-07-16 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6700692B2 (en) * 1997-04-02 2004-03-02 Gentex Corporation Electrochromic rearview mirror assembly incorporating a display/signal light
US6150239A (en) * 1997-05-31 2000-11-21 Max Planck Society Method for the transfer of thin layers monocrystalline material onto a desirable substrate
EP2169733B1 (de) 1997-09-29 2017-07-19 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle
JP3346735B2 (ja) * 1998-03-03 2002-11-18 日亜化学工業株式会社 窒化物半導体発光素子及びその製造方法
US7193246B1 (en) 1998-03-12 2007-03-20 Nichia Corporation Nitride semiconductor device
DE19814879A1 (de) * 1998-04-02 1999-10-07 Basf Ag Verfahren zur selektiven Flüssigphasenhydrierung von alpha,beta-ungesättigten Carbonylverbindungen
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
US6838705B1 (en) 1999-03-29 2005-01-04 Nichia Corporation Nitride semiconductor device
JP3719047B2 (ja) * 1999-06-07 2005-11-24 日亜化学工業株式会社 窒化物半導体素子
US6133589A (en) * 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
JP2001119102A (ja) * 1999-10-15 2001-04-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体レーザダイオード
JP2001168385A (ja) * 1999-12-06 2001-06-22 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体発光素子
JP4032636B2 (ja) * 1999-12-13 2008-01-16 日亜化学工業株式会社 発光素子
CN1292494C (zh) * 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
DE10051465A1 (de) * 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
FR2809534B1 (fr) 2000-05-26 2005-01-14 Commissariat Energie Atomique Dispositif semiconducteur a injection electronique verticale et son procede de fabrication
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
JP4091261B2 (ja) 2000-10-31 2008-05-28 株式会社東芝 半導体発光素子及びその製造方法
EP2034530B1 (en) * 2001-06-15 2015-01-21 Cree, Inc. GaN based LED formed on a SiC substrate
EP1403932B1 (en) 2001-07-04 2012-09-05 Nichia Corporation Light emitting nitride semiconductor device
JP4967211B2 (ja) * 2001-09-26 2012-07-04 日本電気株式会社 光電気化学デバイス
MY139533A (en) 2001-11-05 2009-10-30 Nichia Corp Nitride semiconductor device
FR2834123B1 (fr) * 2001-12-21 2005-02-04 Soitec Silicon On Insulator Procede de report de couches minces semi-conductrices et procede d'obtention d'une plaquette donneuse pour un tel procede de report
ATE370264T1 (de) 2002-07-17 2007-09-15 Soitec Silicon On Insulator Verfahren zur herstellung von substraten, insbesondere für die optik, elektronik und optoelektronik
FR2842648B1 (fr) 2002-07-18 2005-01-14 Commissariat Energie Atomique Procede de transfert d'une couche mince electriquement active
JP4590820B2 (ja) * 2002-12-16 2010-12-01 富士ゼロックス株式会社 面発光型半導体レーザおよびその製造方法
TW578318B (en) * 2002-12-31 2004-03-01 United Epitaxy Co Ltd Light emitting diode and method of making the same
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DE102004062290A1 (de) * 2004-12-23 2006-07-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterchips
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DE102005052357A1 (de) 2005-09-01 2007-03-15 Osram Opto Semiconductors Gmbh Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
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Also Published As

Publication number Publication date
JP2009534859A (ja) 2009-09-24
TWI354381B (en) 2011-12-11
US20090309113A1 (en) 2009-12-17
TW200746479A (en) 2007-12-16
EP2011161A2 (de) 2009-01-07
WO2007121739A3 (de) 2008-03-13
KR101370257B1 (ko) 2014-03-05
CN101443923B (zh) 2010-12-08
US8093607B2 (en) 2012-01-10
CN101443923A (zh) 2009-05-27
WO2007121739A2 (de) 2007-11-01
KR20080112410A (ko) 2008-12-24
DE102006061167A1 (de) 2007-12-20

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