JP2009534859A5 - - Google Patents

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Publication number
JP2009534859A5
JP2009534859A5 JP2009506911A JP2009506911A JP2009534859A5 JP 2009534859 A5 JP2009534859 A5 JP 2009534859A5 JP 2009506911 A JP2009506911 A JP 2009506911A JP 2009506911 A JP2009506911 A JP 2009506911A JP 2009534859 A5 JP2009534859 A5 JP 2009534859A5
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JP
Japan
Prior art keywords
optoelectronic semiconductor
semiconductor component
component according
intermediate layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009506911A
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English (en)
Japanese (ja)
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JP2009534859A (ja
JP5623074B2 (ja
Filing date
Publication date
Priority claimed from DE102006061167A external-priority patent/DE102006061167A1/de
Application filed filed Critical
Publication of JP2009534859A publication Critical patent/JP2009534859A/ja
Publication of JP2009534859A5 publication Critical patent/JP2009534859A5/ja
Application granted granted Critical
Publication of JP5623074B2 publication Critical patent/JP5623074B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009506911A 2006-04-25 2007-04-25 光電子半導体部品 Expired - Fee Related JP5623074B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
DE102006019109.9 2006-04-25
DE102006019109 2006-04-25
DE102006030252.4 2006-06-30
DE102006030252 2006-06-30
DE102006061167.5 2006-12-22
DE102006061167A DE102006061167A1 (de) 2006-04-25 2006-12-22 Optoelektronisches Halbleiterbauelement
PCT/DE2007/000740 WO2007121739A2 (de) 2006-04-25 2007-04-25 Optoelektronisches halbleiterbauelement

Publications (3)

Publication Number Publication Date
JP2009534859A JP2009534859A (ja) 2009-09-24
JP2009534859A5 true JP2009534859A5 (enExample) 2011-06-02
JP5623074B2 JP5623074B2 (ja) 2014-11-12

Family

ID=38461180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009506911A Expired - Fee Related JP5623074B2 (ja) 2006-04-25 2007-04-25 光電子半導体部品

Country Status (8)

Country Link
US (1) US8093607B2 (enExample)
EP (1) EP2011161A2 (enExample)
JP (1) JP5623074B2 (enExample)
KR (1) KR101370257B1 (enExample)
CN (1) CN101443923B (enExample)
DE (1) DE102006061167A1 (enExample)
TW (1) TWI354381B (enExample)
WO (1) WO2007121739A2 (enExample)

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WO2010036602A1 (en) * 2008-09-26 2010-04-01 S.O.I.Tec Silicon On Insulator Technologies Method of forming a composite laser substrate
DE102009036621B4 (de) 2009-08-07 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
US9362459B2 (en) 2009-09-02 2016-06-07 United States Department Of Energy High reflectivity mirrors and method for making same
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US9105824B2 (en) 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
TWI535077B (zh) 2012-05-24 2016-05-21 台達電子工業股份有限公司 發光單元及其發光模組
KR102091831B1 (ko) * 2013-01-08 2020-03-20 서울반도체 주식회사 발광 다이오드 및 그 제조방법
US10658546B2 (en) 2015-01-21 2020-05-19 Cree, Inc. High efficiency LEDs and methods of manufacturing
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TW200802544A (en) * 2006-04-25 2008-01-01 Osram Opto Semiconductors Gmbh Composite substrate and method for making the same
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