JP2009534859A5 - - Google Patents
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- Publication number
- JP2009534859A5 JP2009534859A5 JP2009506911A JP2009506911A JP2009534859A5 JP 2009534859 A5 JP2009534859 A5 JP 2009534859A5 JP 2009506911 A JP2009506911 A JP 2009506911A JP 2009506911 A JP2009506911 A JP 2009506911A JP 2009534859 A5 JP2009534859 A5 JP 2009534859A5
- Authority
- JP
- Japan
- Prior art keywords
- optoelectronic semiconductor
- semiconductor component
- component according
- intermediate layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005693 optoelectronics Effects 0.000 claims 15
- 239000004065 semiconductor Substances 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 5
- 239000000463 material Substances 0.000 claims 4
- 238000000926 separation method Methods 0.000 claims 4
- 230000005670 electromagnetic radiation Effects 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- -1 Ta 2 O 5 Inorganic materials 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006019109 | 2006-04-25 | ||
| DE102006019109.9 | 2006-04-25 | ||
| DE102006030252.4 | 2006-06-30 | ||
| DE102006030252 | 2006-06-30 | ||
| DE102006061167.5 | 2006-12-22 | ||
| DE102006061167A DE102006061167A1 (de) | 2006-04-25 | 2006-12-22 | Optoelektronisches Halbleiterbauelement |
| PCT/DE2007/000740 WO2007121739A2 (de) | 2006-04-25 | 2007-04-25 | Optoelektronisches halbleiterbauelement |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009534859A JP2009534859A (ja) | 2009-09-24 |
| JP2009534859A5 true JP2009534859A5 (enExample) | 2011-06-02 |
| JP5623074B2 JP5623074B2 (ja) | 2014-11-12 |
Family
ID=38461180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009506911A Expired - Fee Related JP5623074B2 (ja) | 2006-04-25 | 2007-04-25 | 光電子半導体部品 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8093607B2 (enExample) |
| EP (1) | EP2011161A2 (enExample) |
| JP (1) | JP5623074B2 (enExample) |
| KR (1) | KR101370257B1 (enExample) |
| CN (1) | CN101443923B (enExample) |
| DE (1) | DE102006061167A1 (enExample) |
| TW (1) | TWI354381B (enExample) |
| WO (1) | WO2007121739A2 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006007293B4 (de) * | 2006-01-31 | 2023-04-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines Quasi-Substratwafers und ein unter Verwendung eines solchen Quasi-Substratwafers hergestellter Halbleiterkörper |
| KR100872717B1 (ko) | 2007-06-22 | 2008-12-05 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
| US9461201B2 (en) | 2007-11-14 | 2016-10-04 | Cree, Inc. | Light emitting diode dielectric mirror |
| US7915629B2 (en) | 2008-12-08 | 2011-03-29 | Cree, Inc. | Composite high reflectivity layer |
| DE102008019268A1 (de) * | 2008-02-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| US8692260B2 (en) | 2008-09-26 | 2014-04-08 | Soitec | Method of forming a composite laser substrate |
| DE102009036621B4 (de) | 2009-08-07 | 2023-12-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil |
| US9362459B2 (en) | 2009-09-02 | 2016-06-07 | United States Department Of Energy | High reflectivity mirrors and method for making same |
| US9435493B2 (en) | 2009-10-27 | 2016-09-06 | Cree, Inc. | Hybrid reflector system for lighting device |
| US9105824B2 (en) | 2010-04-09 | 2015-08-11 | Cree, Inc. | High reflective board or substrate for LEDs |
| US9012938B2 (en) | 2010-04-09 | 2015-04-21 | Cree, Inc. | High reflective substrate of light emitting devices with improved light output |
| US10243121B2 (en) | 2011-06-24 | 2019-03-26 | Cree, Inc. | High voltage monolithic LED chip with improved reliability |
| US9728676B2 (en) | 2011-06-24 | 2017-08-08 | Cree, Inc. | High voltage monolithic LED chip |
| TWI535077B (zh) | 2012-05-24 | 2016-05-21 | 台達電子工業股份有限公司 | 發光單元及其發光模組 |
| KR102091831B1 (ko) * | 2013-01-08 | 2020-03-20 | 서울반도체 주식회사 | 발광 다이오드 및 그 제조방법 |
| US10658546B2 (en) | 2015-01-21 | 2020-05-19 | Cree, Inc. | High efficiency LEDs and methods of manufacturing |
| US10693038B2 (en) * | 2017-11-22 | 2020-06-23 | Epistar Corporation | Semiconductor device |
Family Cites Families (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DK0507154T3 (da) * | 1991-03-21 | 1996-06-10 | Moeller Willy Ag | Fremgangsmåde til bestemmelse af alkoholer og anvendelsen af en indretning til alkoholbestemmelse |
| FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| DE19640594B4 (de) * | 1996-10-01 | 2016-08-04 | Osram Gmbh | Bauelement |
| WO1998031055A1 (en) * | 1997-01-09 | 1998-07-16 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
| US6700692B2 (en) * | 1997-04-02 | 2004-03-02 | Gentex Corporation | Electrochromic rearview mirror assembly incorporating a display/signal light |
| US6150239A (en) * | 1997-05-31 | 2000-11-21 | Max Planck Society | Method for the transfer of thin layers monocrystalline material onto a desirable substrate |
| EP2169733B1 (de) | 1997-09-29 | 2017-07-19 | OSRAM Opto Semiconductors GmbH | Halbleiterlichtquelle |
| JP3346735B2 (ja) * | 1998-03-03 | 2002-11-18 | 日亜化学工業株式会社 | 窒化物半導体発光素子及びその製造方法 |
| US7193246B1 (en) | 1998-03-12 | 2007-03-20 | Nichia Corporation | Nitride semiconductor device |
| DE19814879A1 (de) * | 1998-04-02 | 1999-10-07 | Basf Ag | Verfahren zur selektiven Flüssigphasenhydrierung von alpha,beta-ungesättigten Carbonylverbindungen |
| US6320206B1 (en) * | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
| US6838705B1 (en) | 1999-03-29 | 2005-01-04 | Nichia Corporation | Nitride semiconductor device |
| JP3719047B2 (ja) * | 1999-06-07 | 2005-11-24 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| US6133589A (en) * | 1999-06-08 | 2000-10-17 | Lumileds Lighting, U.S., Llc | AlGaInN-based LED having thick epitaxial layer for improved light extraction |
| JP2001119102A (ja) * | 1999-10-15 | 2001-04-27 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体レーザダイオード |
| JP2001168385A (ja) * | 1999-12-06 | 2001-06-22 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子及びiii族窒化物系化合物半導体発光素子 |
| JP4032636B2 (ja) * | 1999-12-13 | 2008-01-16 | 日亜化学工業株式会社 | 発光素子 |
| CN1292494C (zh) * | 2000-04-26 | 2006-12-27 | 奥斯兰姆奥普托半导体有限责任公司 | 发光半导体元件及其制造方法 |
| DE10051465A1 (de) * | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
| FR2809534B1 (fr) | 2000-05-26 | 2005-01-14 | Commissariat Energie Atomique | Dispositif semiconducteur a injection electronique verticale et son procede de fabrication |
| US20020017652A1 (en) * | 2000-08-08 | 2002-02-14 | Stefan Illek | Semiconductor chip for optoelectronics |
| JP4091261B2 (ja) | 2000-10-31 | 2008-05-28 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| EP2034530B1 (en) * | 2001-06-15 | 2015-01-21 | Cree, Inc. | GaN based LED formed on a SiC substrate |
| EP1403932B1 (en) | 2001-07-04 | 2012-09-05 | Nichia Corporation | Light emitting nitride semiconductor device |
| JP4967211B2 (ja) * | 2001-09-26 | 2012-07-04 | 日本電気株式会社 | 光電気化学デバイス |
| MY139533A (en) | 2001-11-05 | 2009-10-30 | Nichia Corp | Nitride semiconductor device |
| FR2834123B1 (fr) * | 2001-12-21 | 2005-02-04 | Soitec Silicon On Insulator | Procede de report de couches minces semi-conductrices et procede d'obtention d'une plaquette donneuse pour un tel procede de report |
| ATE370264T1 (de) | 2002-07-17 | 2007-09-15 | Soitec Silicon On Insulator | Verfahren zur herstellung von substraten, insbesondere für die optik, elektronik und optoelektronik |
| FR2842648B1 (fr) | 2002-07-18 | 2005-01-14 | Commissariat Energie Atomique | Procede de transfert d'une couche mince electriquement active |
| JP4590820B2 (ja) * | 2002-12-16 | 2010-12-01 | 富士ゼロックス株式会社 | 面発光型半導体レーザおよびその製造方法 |
| TW578318B (en) * | 2002-12-31 | 2004-03-01 | United Epitaxy Co Ltd | Light emitting diode and method of making the same |
| US7061065B2 (en) * | 2003-03-31 | 2006-06-13 | National Chung-Hsing University | Light emitting diode and method for producing the same |
| TWI344706B (en) * | 2003-06-04 | 2011-07-01 | Myung Cheol Yoo | Method of fabricating vertical structure compound semiconductor devices |
| TWI240434B (en) * | 2003-06-24 | 2005-09-21 | Osram Opto Semiconductors Gmbh | Method to produce semiconductor-chips |
| US6979582B2 (en) * | 2003-09-22 | 2005-12-27 | National Chung-Hsing University | Vertical-cavity surface emitting laser diode and method for producing the same |
| US7808011B2 (en) * | 2004-03-19 | 2010-10-05 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting devices including in-plane light emitting layers |
| WO2005104780A2 (en) * | 2004-04-28 | 2005-11-10 | Verticle, Inc | Vertical structure semiconductor devices |
| US7825006B2 (en) * | 2004-05-06 | 2010-11-02 | Cree, Inc. | Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method |
| DE102004062290A1 (de) * | 2004-12-23 | 2006-07-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterchips |
| WO2006116030A2 (en) | 2005-04-21 | 2006-11-02 | Aonex Technologies, Inc. | Bonded intermediate substrate and method of making same |
| DE102005052357A1 (de) | 2005-09-01 | 2007-03-15 | Osram Opto Semiconductors Gmbh | Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement |
| DE102005052358A1 (de) | 2005-09-01 | 2007-03-15 | Osram Opto Semiconductors Gmbh | Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement |
| DE102006015788A1 (de) | 2006-01-27 | 2007-09-13 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| DE102006007293B4 (de) * | 2006-01-31 | 2023-04-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines Quasi-Substratwafers und ein unter Verwendung eines solchen Quasi-Substratwafers hergestellter Halbleiterkörper |
| TW200802544A (en) * | 2006-04-25 | 2008-01-01 | Osram Opto Semiconductors Gmbh | Composite substrate and method for making the same |
| DE102007018307A1 (de) | 2007-01-26 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
-
2006
- 2006-12-22 DE DE102006061167A patent/DE102006061167A1/de not_active Withdrawn
-
2007
- 2007-04-23 TW TW096114217A patent/TWI354381B/zh not_active IP Right Cessation
- 2007-04-25 KR KR1020087028644A patent/KR101370257B1/ko not_active Expired - Fee Related
- 2007-04-25 JP JP2009506911A patent/JP5623074B2/ja not_active Expired - Fee Related
- 2007-04-25 WO PCT/DE2007/000740 patent/WO2007121739A2/de not_active Ceased
- 2007-04-25 EP EP07722298A patent/EP2011161A2/de not_active Withdrawn
- 2007-04-25 CN CN2007800147038A patent/CN101443923B/zh not_active Expired - Fee Related
- 2007-04-25 US US12/298,703 patent/US8093607B2/en not_active Expired - Fee Related
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