KR101370257B1 - 광전자 반도체 소자 - Google Patents

광전자 반도체 소자 Download PDF

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Publication number
KR101370257B1
KR101370257B1 KR1020087028644A KR20087028644A KR101370257B1 KR 101370257 B1 KR101370257 B1 KR 101370257B1 KR 1020087028644 A KR1020087028644 A KR 1020087028644A KR 20087028644 A KR20087028644 A KR 20087028644A KR 101370257 B1 KR101370257 B1 KR 101370257B1
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South Korea
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layer
semiconductor device
optoelectronic semiconductor
intermediate layer
mirror
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KR1020087028644A
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English (en)
Korean (ko)
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KR20080112410A (ko
Inventor
크리스토프 에히흘러
스테픈 밀러
위 슈트라우쓰
보커 할레
매티아쓰 사바틸
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오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20080112410A publication Critical patent/KR20080112410A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/862—Resonant cavity structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Lasers (AREA)
  • Photovoltaic Devices (AREA)
KR1020087028644A 2006-04-25 2007-04-25 광전자 반도체 소자 Expired - Fee Related KR101370257B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
DE102006019109 2006-04-25
DE102006019109.9 2006-04-25
DE102006030252.4 2006-06-30
DE102006030252 2006-06-30
DE102006061167.5 2006-12-22
DE102006061167A DE102006061167A1 (de) 2006-04-25 2006-12-22 Optoelektronisches Halbleiterbauelement
PCT/DE2007/000740 WO2007121739A2 (de) 2006-04-25 2007-04-25 Optoelektronisches halbleiterbauelement

Publications (2)

Publication Number Publication Date
KR20080112410A KR20080112410A (ko) 2008-12-24
KR101370257B1 true KR101370257B1 (ko) 2014-03-05

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KR1020087028644A Expired - Fee Related KR101370257B1 (ko) 2006-04-25 2007-04-25 광전자 반도체 소자

Country Status (8)

Country Link
US (1) US8093607B2 (enExample)
EP (1) EP2011161A2 (enExample)
JP (1) JP5623074B2 (enExample)
KR (1) KR101370257B1 (enExample)
CN (1) CN101443923B (enExample)
DE (1) DE102006061167A1 (enExample)
TW (1) TWI354381B (enExample)
WO (1) WO2007121739A2 (enExample)

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KR100872717B1 (ko) 2007-06-22 2008-12-05 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US9461201B2 (en) 2007-11-14 2016-10-04 Cree, Inc. Light emitting diode dielectric mirror
US7915629B2 (en) 2008-12-08 2011-03-29 Cree, Inc. Composite high reflectivity layer
DE102008019268A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US8692260B2 (en) 2008-09-26 2014-04-08 Soitec Method of forming a composite laser substrate
DE102009036621B4 (de) 2009-08-07 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
US9362459B2 (en) 2009-09-02 2016-06-07 United States Department Of Energy High reflectivity mirrors and method for making same
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US9105824B2 (en) 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
TWI535077B (zh) 2012-05-24 2016-05-21 台達電子工業股份有限公司 發光單元及其發光模組
KR102091831B1 (ko) * 2013-01-08 2020-03-20 서울반도체 주식회사 발광 다이오드 및 그 제조방법
US10658546B2 (en) 2015-01-21 2020-05-19 Cree, Inc. High efficiency LEDs and methods of manufacturing
US10693038B2 (en) * 2017-11-22 2020-06-23 Epistar Corporation Semiconductor device

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US6320206B1 (en) 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
WO2005004231A1 (de) 2003-06-24 2005-01-13 Osram Opto Semiconductors Gmbh Verfahren zum herstellen von halbleiterchips

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EP2169733B1 (de) 1997-09-29 2017-07-19 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle
JP3346735B2 (ja) * 1998-03-03 2002-11-18 日亜化学工業株式会社 窒化物半導体発光素子及びその製造方法
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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6320206B1 (en) 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
WO2005004231A1 (de) 2003-06-24 2005-01-13 Osram Opto Semiconductors Gmbh Verfahren zum herstellen von halbleiterchips

Also Published As

Publication number Publication date
JP2009534859A (ja) 2009-09-24
TWI354381B (en) 2011-12-11
US20090309113A1 (en) 2009-12-17
TW200746479A (en) 2007-12-16
JP5623074B2 (ja) 2014-11-12
EP2011161A2 (de) 2009-01-07
WO2007121739A3 (de) 2008-03-13
CN101443923B (zh) 2010-12-08
US8093607B2 (en) 2012-01-10
CN101443923A (zh) 2009-05-27
WO2007121739A2 (de) 2007-11-01
KR20080112410A (ko) 2008-12-24
DE102006061167A1 (de) 2007-12-20

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