TWI354381B - Opto-electronic semiconductor component - Google Patents

Opto-electronic semiconductor component Download PDF

Info

Publication number
TWI354381B
TWI354381B TW096114217A TW96114217A TWI354381B TW I354381 B TWI354381 B TW I354381B TW 096114217 A TW096114217 A TW 096114217A TW 96114217 A TW96114217 A TW 96114217A TW I354381 B TWI354381 B TW I354381B
Authority
TW
Taiwan
Prior art keywords
layer
optoelectronic semiconductor
semiconductor component
intermediate layer
mirror
Prior art date
Application number
TW096114217A
Other languages
English (en)
Chinese (zh)
Other versions
TW200746479A (en
Inventor
Christoph Eichler
Volker Haerle
Stephan Miller
Matthias Sabathil
Uwe Strauss
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200746479A publication Critical patent/TW200746479A/zh
Application granted granted Critical
Publication of TWI354381B publication Critical patent/TWI354381B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/862—Resonant cavity structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Lasers (AREA)
  • Photovoltaic Devices (AREA)
TW096114217A 2006-04-25 2007-04-23 Opto-electronic semiconductor component TWI354381B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006019109 2006-04-25
DE102006030252 2006-06-30
DE102006061167A DE102006061167A1 (de) 2006-04-25 2006-12-22 Optoelektronisches Halbleiterbauelement

Publications (2)

Publication Number Publication Date
TW200746479A TW200746479A (en) 2007-12-16
TWI354381B true TWI354381B (en) 2011-12-11

Family

ID=38461180

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096114217A TWI354381B (en) 2006-04-25 2007-04-23 Opto-electronic semiconductor component

Country Status (8)

Country Link
US (1) US8093607B2 (enExample)
EP (1) EP2011161A2 (enExample)
JP (1) JP5623074B2 (enExample)
KR (1) KR101370257B1 (enExample)
CN (1) CN101443923B (enExample)
DE (1) DE102006061167A1 (enExample)
TW (1) TWI354381B (enExample)
WO (1) WO2007121739A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8723192B2 (en) 2009-08-07 2014-05-13 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component

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DE102006007293B4 (de) * 2006-01-31 2023-04-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Quasi-Substratwafers und ein unter Verwendung eines solchen Quasi-Substratwafers hergestellter Halbleiterkörper
KR100872717B1 (ko) 2007-06-22 2008-12-05 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US9461201B2 (en) 2007-11-14 2016-10-04 Cree, Inc. Light emitting diode dielectric mirror
US7915629B2 (en) 2008-12-08 2011-03-29 Cree, Inc. Composite high reflectivity layer
DE102008019268A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US8692260B2 (en) 2008-09-26 2014-04-08 Soitec Method of forming a composite laser substrate
US9362459B2 (en) 2009-09-02 2016-06-07 United States Department Of Energy High reflectivity mirrors and method for making same
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US9105824B2 (en) 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
TWI535077B (zh) 2012-05-24 2016-05-21 台達電子工業股份有限公司 發光單元及其發光模組
KR102091831B1 (ko) * 2013-01-08 2020-03-20 서울반도체 주식회사 발광 다이오드 및 그 제조방법
US10658546B2 (en) 2015-01-21 2020-05-19 Cree, Inc. High efficiency LEDs and methods of manufacturing
US10693038B2 (en) * 2017-11-22 2020-06-23 Epistar Corporation Semiconductor device

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8723192B2 (en) 2009-08-07 2014-05-13 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component
US9209328B2 (en) 2009-08-07 2015-12-08 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component
US9490396B2 (en) 2009-08-07 2016-11-08 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component
US9728683B2 (en) 2009-08-07 2017-08-08 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component
US9985171B2 (en) 2009-08-07 2018-05-29 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component
US10665747B2 (en) 2009-08-07 2020-05-26 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component
US11239386B2 (en) 2009-08-07 2022-02-01 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component
US11749776B2 (en) 2009-08-07 2023-09-05 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component
US12002901B2 (en) 2009-08-07 2024-06-04 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component

Also Published As

Publication number Publication date
JP2009534859A (ja) 2009-09-24
US20090309113A1 (en) 2009-12-17
TW200746479A (en) 2007-12-16
JP5623074B2 (ja) 2014-11-12
EP2011161A2 (de) 2009-01-07
WO2007121739A3 (de) 2008-03-13
KR101370257B1 (ko) 2014-03-05
CN101443923B (zh) 2010-12-08
US8093607B2 (en) 2012-01-10
CN101443923A (zh) 2009-05-27
WO2007121739A2 (de) 2007-11-01
KR20080112410A (ko) 2008-12-24
DE102006061167A1 (de) 2007-12-20

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MM4A Annulment or lapse of patent due to non-payment of fees