JP5618261B2 - 露光装置及びデバイス製造方法 - Google Patents
露光装置及びデバイス製造方法 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Description
以下、第1の実施形態を図1〜図6に基づいて説明する。
Dimension)の変化の発生を未然に阻止することが可能になる。また、これらの欠陥を防ぐために、レチクルの検査を頻繁に行う必要がないので、結果的に生産性の低下の防止、ひいては生産性の向上を図ることが可能になる。
次に、第2の実施形態について、図7〜図9に基づいて説明する。ここで、前述した第1の実施形態と同一若しくは同等の構成部分については、同一の符号を用いるとともにその説明を簡略若しくは省略する。
σ:ボルツマン定数
TA:物体Aの絶対温度
TB:物体Bの絶対温度
εA :物体Aの放射率
εB :物体Bの放射率
SA :物体Aの表面積
SB :物体Bの表面積
FAB:物体AからBへの形態係数
上式(1)中の形態係数は1以下の数字であるが、本実施形態のような矩形平板間の伝熱の場合、形態係数は矩形の辺の長さの、平板間距離に対する比が大きいほど値が1に近づく。走査型露光装置では、本実施形態のようにレチクルRの照明領域がスリット状であることが多く、図8に示されるようにレチクルRの上に、近接冷却デバイス110A,110BをレチクルRにかなり近接させて配置した場合には、レチクルステージRSTが走査範囲内のどこの位置にあっても、常に近接冷却デバイス110A,110BをレチクルR全面積に対しておおよそ2/3程度の面積まで相対させることが可能である。従って、形態係数は容易に0.2程度の値にすることが可能である。
冷却デバイスの制御方法は上記に限らず,他の方法でも良い。例えば、レチクルRの温度を計測する温度センサ及び冷却デバイスの温度をモニタする温度センサの一方、又は両方を設けることなく、例えば、予め実験又はシミュレーションなどで冷却デバイスの制御パターンを決定しても良い。
Claims (12)
- マスクと物体とを同期移動して前記マスクに形成されたパターンを前記物体上に転写する露光装置であって、
前記マスクを保持し、前記マスクが同期移動される第1方向に移動するスライダと;
前記マスクを照明光により照明する照明系と;
前記スライダに対して前記照明系側で、前記第1方向に関して前記照明光の光路を挟んで、一側と他側にそれぞれ配置される前記マスクの温度制御用の冷却部材と;を備え、
前記スライダは、前記マスクを保持する本体部と、前記本体部の前記第1方向の一端と他端それぞれに補助的に設けられ、前記冷却部材の下面に対向する庇状部材を備え、
前記マスクの一面と前記庇状部材とが前記冷却部材に近接した状態で移動される露光装置。 - 前記照明系に一端が接続され、他端部が前記各冷却部材を覆うとともに、前記パージ空間を外気に対して隔離する隔壁部材を兼ねるカバー部材をさらに備える請求項1に記載の露光装置。
- 前記マスクから射出される前記照明光を前記物体上に投射する投影光学系をさらに備え、
前記照明系と前記投影光学系との間の前記照明光の光路を含む空間がパージガスでパージされるパージ空間とされるとともに、前記冷却部材が前記パージ空間を外気に対して隔離する隔壁部材の一部を兼ねている請求項1又は2に記載の露光装置。 - 前記パージガスとして、クリーンドライエアが用いられる請求項3に記載の露光装置。
- 前記スライダを移動可能に支持する定盤をさらに備え、
前記定盤と前記投影光学系との間に設けられた前記照明光の光路を取り囲む環状のラビリンスシールをさらに備え、該ラビリンスシールが、前記マスクと前記投影光学系との間の前記照明光の光路を含む空間を外気に対して隔離する隔壁を兼ねている請求項3又は4に記載の露光装置。 - 前記ラビリンスシールで外気に対して隔離された前記空間の内部がパージガスでパージされている請求項5に記載の露光装置。
- 前記パージガスとして、クリーンドライエアが用いられる請求項6に記載の露光装置。
- 前記スライダは、前記第1方向及びこれに直交する第2方向を含む二次元平面内の3自由度方向に移動する請求項1〜7のいずれか一項に記載の露光装置。
- 前記冷却部材は、冷却対象物に所定の隙間を介して対向し、前記冷却対象物を冷却する近接冷却デバイスを含む請求項1〜8のいずれか一項に記載の露光装置。
- 前記近接冷却デバイスは、輻射伝熱により前記冷却対象物を冷却する請求項9に記載の露光装置。
- 前記スライダは、前記移動時に、前記マスクの一面が前記冷却部材に接触しない範囲で前記第1方向及びこれに直交する第2方向を含む二次元平面に直交する方向に関して可能な限り前記冷却部材に近接する請求項1〜10のいずれか一項に記載の露光装置。
- 請求項1〜11のいずれか一項に記載の露光装置を用いて物体上にパターンを転写することと;
前記パターンが転写された前記物体を現像することと;を含むデバイス製造方法。
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JP2009184419 | 2009-08-07 | ||
JP2009184419 | 2009-08-07 | ||
JP2009184412 | 2009-08-07 | ||
JP2009184412 | 2009-08-07 | ||
PCT/JP2010/004972 WO2011016255A1 (ja) | 2009-08-07 | 2010-08-06 | 露光装置及び露光方法、並びにデバイス製造方法 |
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JP2014147302A Division JP5800257B2 (ja) | 2009-08-07 | 2014-07-18 | 露光装置及び露光方法、並びにデバイス製造方法 |
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JP2014147302A Active JP5800257B2 (ja) | 2009-08-07 | 2014-07-18 | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2015170905A Active JP6008219B2 (ja) | 2009-08-07 | 2015-08-31 | 露光装置及びデバイス製造方法 |
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JP2015170905A Active JP6008219B2 (ja) | 2009-08-07 | 2015-08-31 | 露光装置及びデバイス製造方法 |
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US (2) | US20110032495A1 (ja) |
JP (3) | JP5618261B2 (ja) |
KR (1) | KR101499285B1 (ja) |
TW (1) | TWI514087B (ja) |
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Cited By (1)
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JP2015179295A (ja) * | 2009-08-07 | 2015-10-08 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
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JP5886476B2 (ja) * | 2012-05-22 | 2016-03-16 | エーエスエムエル ネザーランズ ビー.ブイ. | センサ、リソグラフィ装置及びデバイス製造方法 |
WO2014005780A1 (en) | 2012-07-06 | 2014-01-09 | Asml Netherlands B.V. | A lithographic apparatus |
TWI739510B (zh) * | 2014-03-28 | 2021-09-11 | 日商尼康股份有限公司 | 曝光裝置、平板顯示器之製造方法及元件製造方法 |
JP6610890B2 (ja) * | 2016-03-11 | 2019-11-27 | 株式会社ニコン | 荷電粒子線露光装置及びデバイス製造方法 |
US10955947B2 (en) * | 2016-07-29 | 2021-03-23 | Apple Inc. | RC tuning of touch electrode connections on a touch sensor panel |
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EP3620858B1 (en) | 2018-09-10 | 2023-11-01 | Canon Kabushiki Kaisha | Exposure apparatus and method of manufacturing article |
CN111381452B (zh) * | 2018-12-29 | 2021-11-02 | 上海微电子装备(集团)股份有限公司 | 一种掩模板冷却装置及光刻设备 |
CN111987011B (zh) * | 2019-05-21 | 2024-03-12 | 华景电通股份有限公司 | 气帘控制系统 |
CN113848684B (zh) * | 2021-09-22 | 2022-11-04 | 哈尔滨工业大学 | 一种光刻机掩模台隔振装置 |
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JP5800257B2 (ja) | 2015-10-28 |
JPWO2011016255A1 (ja) | 2013-01-10 |
US9874823B2 (en) | 2018-01-23 |
WO2011016255A1 (ja) | 2011-02-10 |
TWI514087B (zh) | 2015-12-21 |
JP2014207479A (ja) | 2014-10-30 |
JP6008219B2 (ja) | 2016-10-19 |
KR20120038394A (ko) | 2012-04-23 |
KR101499285B1 (ko) | 2015-03-05 |
US20110032495A1 (en) | 2011-02-10 |
TW201118507A (en) | 2011-06-01 |
JP2015228519A (ja) | 2015-12-17 |
US20160004166A1 (en) | 2016-01-07 |
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