JP5609881B2 - 重合体及び感放射線性組成物並びに単量体 - Google Patents

重合体及び感放射線性組成物並びに単量体 Download PDF

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JP5609881B2
JP5609881B2 JP2011534155A JP2011534155A JP5609881B2 JP 5609881 B2 JP5609881 B2 JP 5609881B2 JP 2011534155 A JP2011534155 A JP 2011534155A JP 2011534155 A JP2011534155 A JP 2011534155A JP 5609881 B2 JP5609881 B2 JP 5609881B2
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polymer
general formula
atom
carbon atoms
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JPWO2011040175A1 (ja
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研 丸山
研 丸山
木村　徹
徹 木村
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JSR Corp
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Emergency Medicine (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Heterocyclic Compounds Containing Sulfur Atoms (AREA)
  • Pyrane Compounds (AREA)
JP2011534155A 2009-09-30 2010-09-02 重合体及び感放射線性組成物並びに単量体 Active JP5609881B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011534155A JP5609881B2 (ja) 2009-09-30 2010-09-02 重合体及び感放射線性組成物並びに単量体

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2009228360 2009-09-30
JP2009228360 2009-09-30
JP2010159097 2010-07-13
JP2010159097 2010-07-13
PCT/JP2010/065066 WO2011040175A1 (fr) 2009-09-30 2010-09-02 Polymère, composition sensible aux rayonnements, monomère et procédé de fabrication correspondant
JP2011534155A JP5609881B2 (ja) 2009-09-30 2010-09-02 重合体及び感放射線性組成物並びに単量体

Publications (2)

Publication Number Publication Date
JPWO2011040175A1 JPWO2011040175A1 (ja) 2013-02-28
JP5609881B2 true JP5609881B2 (ja) 2014-10-22

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JP2011534155A Active JP5609881B2 (ja) 2009-09-30 2010-09-02 重合体及び感放射線性組成物並びに単量体

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US (1) US8389202B2 (fr)
JP (1) JP5609881B2 (fr)
KR (1) KR101706409B1 (fr)
TW (1) TWI485168B (fr)
WO (1) WO2011040175A1 (fr)

Families Citing this family (12)

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Publication number Priority date Publication date Assignee Title
KR101744608B1 (ko) * 2011-03-28 2017-06-08 후지필름 가부시키가이샤 감활성 광선성 또는 감방사선성 수지 조성물, 및 이 조성물을 이용한 감활성 광선성 또는 감방사선성 막 및 패턴 형성 방법
JP5618958B2 (ja) * 2011-09-22 2014-11-05 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法及び電子デバイス
JP5978137B2 (ja) * 2012-02-23 2016-08-24 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
JP6323460B2 (ja) * 2013-09-26 2018-05-16 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
KR102554985B1 (ko) 2015-01-16 2023-07-12 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물 및 레지스트 패턴 형성 방법
JP6461616B2 (ja) * 2015-01-16 2019-01-30 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
US10324377B2 (en) 2015-06-15 2019-06-18 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
JP6999351B2 (ja) 2017-10-05 2022-01-18 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物及び化合物
JP6971134B2 (ja) 2017-11-29 2021-11-24 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物及び化合物
JP7115295B2 (ja) * 2018-12-25 2022-08-09 Jnc株式会社 （メタ）アクリレート化合物、重合体、レジスト材料及び（メタ）アクリレート化合物の製造方法
WO2021220851A1 (fr) 2020-04-28 2021-11-04 富士フイルム株式会社 Composition de résine sensible à un rayonnement de lumière active ou sensible à un rayonnement, film sensible à un rayonnement de lumière active ou sensible à un rayonnement, ébauche de masque, procédé de formation de motif, et procédé de production de dispositif électronique
US11829068B2 (en) 2020-10-19 2023-11-28 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, compound, and resin

Citations (9)

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Publication number Priority date Publication date Assignee Title
JPH07325402A (ja) * 1994-06-01 1995-12-12 Fujitsu Ltd レジスト及びパターン形成方法
JP2000231194A (ja) * 1998-12-07 2000-08-22 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2002082439A (ja) * 2000-06-22 2002-03-22 Toray Ind Inc ポジ型感放射線性組成物およびこれを用いたレジストパターンの製造方法
JP2002156760A (ja) * 2000-11-20 2002-05-31 Toray Ind Inc ポジ型感放射線性組成物およびこれを用いたレジストパターンの製造方法
JP2002351080A (ja) * 2001-05-28 2002-12-04 Toray Ind Inc ポジ型感放射線性組成物
JP2002372785A (ja) * 2001-04-12 2002-12-26 Toray Ind Inc ポジ型感放射線性組成物およびこれを用いたレジストパターンの製造方法
JP2010122579A (ja) * 2008-11-21 2010-06-03 Shin-Etsu Chemical Co Ltd ポジ型レジスト材料及びパターン形成方法
WO2010095698A1 (fr) * 2009-02-19 2010-08-26 Jsr株式会社 Polymère, composition sensible à un rayonnement et monomère
WO2011030737A1 (fr) * 2009-09-11 2011-03-17 Jsr株式会社 Composition et nouveau composé sensibles aux rayonnements

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JPH0612452B2 (ja) 1982-09-30 1994-02-16 ブリュ−ワ−・サイエンス・インコ−ポレイテッド 集積回路素子の製造方法
JP2643056B2 (ja) 1991-06-28 1997-08-20 インターナショナル・ビジネス・マシーンズ・コーポレイション 表面反射防止コーティング形成組成物及びその使用
US5561194A (en) 1995-03-29 1996-10-01 International Business Machines Corporation Photoresist composition including polyalkylmethacrylate co-polymer of polyhydroxystyrene
KR100610165B1 (ko) * 1998-12-07 2006-08-09 후지 샤신 필름 가부시기가이샤 포지티브 포토레지스트 조성물
US6492086B1 (en) 1999-10-08 2002-12-10 Shipley Company, L.L.C. Phenolic/alicyclic copolymers and photoresists
JP2001166478A (ja) 1999-12-03 2001-06-22 Jsr Corp 感放射線性樹脂組成物
JP2001166474A (ja) 1999-12-03 2001-06-22 Jsr Corp 感放射線性樹脂組成物
EP1229390A4 (fr) 2000-06-22 2004-06-02 Toray Industries Composition radiosensible positive et procede de production de structures au moyen de celle-ci
US6838225B2 (en) * 2001-01-18 2005-01-04 Jsr Corporation Radiation-sensitive resin composition
JP4595275B2 (ja) 2001-09-28 2010-12-08 住友化学株式会社 化学増幅型ポジ型レジスト組成物
TWI314943B (en) * 2002-08-29 2009-09-21 Radiation-sensitive resin composition
WO2005012374A1 (fr) * 2003-08-05 2005-02-10 Jsr Corporation Polymères acryliques et résines radiosensibles
KR100944227B1 (ko) * 2007-12-17 2010-02-24 제일모직주식회사 방향족 산 분해성 기를 갖는 (메타)아크릴레이트 화합물 및감광성 고분자 및 레지스트 조성물
EP2101217B1 (fr) * 2008-03-14 2011-05-11 Shin-Etsu Chemical Co., Ltd. Polymère contenant un sel de sulfonium, composition de réserve et procédé de formation de motifs
US8609319B2 (en) * 2010-10-01 2013-12-17 Jsr Corporation Radiation-sensitive resin composition and resist film formed using the same

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07325402A (ja) * 1994-06-01 1995-12-12 Fujitsu Ltd レジスト及びパターン形成方法
JP2000231194A (ja) * 1998-12-07 2000-08-22 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2002082439A (ja) * 2000-06-22 2002-03-22 Toray Ind Inc ポジ型感放射線性組成物およびこれを用いたレジストパターンの製造方法
JP2002156760A (ja) * 2000-11-20 2002-05-31 Toray Ind Inc ポジ型感放射線性組成物およびこれを用いたレジストパターンの製造方法
JP2002372785A (ja) * 2001-04-12 2002-12-26 Toray Ind Inc ポジ型感放射線性組成物およびこれを用いたレジストパターンの製造方法
JP2002351080A (ja) * 2001-05-28 2002-12-04 Toray Ind Inc ポジ型感放射線性組成物
JP2010122579A (ja) * 2008-11-21 2010-06-03 Shin-Etsu Chemical Co Ltd ポジ型レジスト材料及びパターン形成方法
WO2010095698A1 (fr) * 2009-02-19 2010-08-26 Jsr株式会社 Polymère, composition sensible à un rayonnement et monomère
WO2011030737A1 (fr) * 2009-09-11 2011-03-17 Jsr株式会社 Composition et nouveau composé sensibles aux rayonnements

Also Published As

Publication number Publication date
TW201118106A (en) 2011-06-01
KR101706409B1 (ko) 2017-02-13
KR20120088658A (ko) 2012-08-08
TWI485168B (zh) 2015-05-21
US8389202B2 (en) 2013-03-05
US20120178024A1 (en) 2012-07-12
JPWO2011040175A1 (ja) 2013-02-28
WO2011040175A1 (fr) 2011-04-07

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