JP5596850B2 - 陰極アークデポジションコーティングソース - Google Patents
陰極アークデポジションコーティングソース Download PDFInfo
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- JP5596850B2 JP5596850B2 JP2013504053A JP2013504053A JP5596850B2 JP 5596850 B2 JP5596850 B2 JP 5596850B2 JP 2013504053 A JP2013504053 A JP 2013504053A JP 2013504053 A JP2013504053 A JP 2013504053A JP 5596850 B2 JP5596850 B2 JP 5596850B2
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- Prior art keywords
- target
- ferromagnetic
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Description
第1の実施形態について図1から図5を参照しながら説明する。図示した実施形態では、陰極アークデポジション法用のコーティングソース1がターゲット2によって構成されている。ターゲット2は、この実施形態では、コーティング設備の冷却支持部に直接取り付けられるように構成されている。図1では、コーティングソース1は円形の断面を有するように示されているが、これ以外の形状、たとえば楕円形、長方形なども可能である。このことは、後述する他の実施形態とその変形例についても当てはまる。以下においては、各コーティングソース1が陰極アークデポジション用として構成されている実施形態とその変形例を説明するが、マグネトロンスパッタデポジション用としてコーティングソースを構成することもそれぞれ可能である。
次に、第2の実施形態について図6と図7を参照しながら説明する。ここでは繰り返しを避けるために、第1の実施形態との相違についてのみ説明し、対応する部分には同一の符号を使用する。
次に、第3の実施形態について図8〜図10を参照しながら説明する。同じく第1及び第2の実施形態との相違点だけを説明し、対応する部分には同一の符号を使用する。
2 ターゲット
3 活性表面
4 穴
5a,5b 強磁性領域
6 強磁性領域
7 バックプレート
8 マウント
Claims (7)
- 粉末冶金製造プロセスにおいて少なくとも1つの粉末状出発材料から作成された少なくとも1つの構成要素(2,7,8)と、
前記構成要素内に設けられた少なくとも1つの強磁性領域(5a,5b,6)と、
を含み、
前記少なくとも1つの強磁性領域(5a,5b,6)が、前記粉末冶金製造プロセスにおいて前記構成要素(2,7,8)に導入されて前記構成要素と結合している、
物理気相成長法用の陰極アークデポジションコーティングソース。 - 前記少なくとも1つの強磁性領域(5a,5b,6)は、前記粉末冶金製造プロセスにおいて粉末の形態で導入された強磁性材料からなる少なくとも1つの領域(6)を含む、請求項1に記載の陰極アークデポジションコーティングソース。
- 前記少なくとも1つの強磁性領域(5a,5b,6)は、少なくとも1つの永久磁石の領域を含む、請求項1又は請求項2に記載の陰極アークデポジションコーティングソース。
- 前記少なくとも1つの強磁性領域(5a,5b,6)は、前記粉末冶金製造プロセスにおいて導入された少なくとも1つの強磁性体(5a,5b)を含む、請求項1〜3のいずれか1項に記載の陰極アークデポジションコーティングソース。
- 当該陰極アークデポジションコーティングソース(1)に含まれたターゲット(2)に、前記少なくとも1つの強磁性領域(5a,5b,6)が配置されている、請求項1〜4のいずれか1項に記載の陰極アークデポジションコーティングソース。
- ターゲット(2)と、
コーティング設備の冷却支持部との熱的結合のために前記ターゲットに結合されたバックプレート(7)と、
が当該陰極アークデポジションコーティングソース(1)に含まれ、
前記少なくとも1つの強磁性領域(5a,5b,6)は、前記ターゲット(2)及び前記バックプレート(7)のいずれか又は両方に配置されている、
請求項1〜4のいずれか1項に記載の陰極アークデポジションコーティングソース。 - ターゲット(2)と、
コーティング設備の冷却支持部に前記ターゲットを連結するために前記ターゲットと取り外し可能に結合されたマウント(8)と、
が当該陰極アークデポジションコーティングソース(1)に含まれ、
前記少なくとも1つの強磁性領域(5a,5b,6)は、前記マウント(8)に配置されている、
請求項1〜4のいずれか1項に記載の陰極アークデポジションコーティングソース。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT0023910U AT12021U1 (de) | 2010-04-14 | 2010-04-14 | Beschichtungsquelle und verfahren zu deren herstellung |
ATGM239/2010 | 2010-04-14 | ||
PCT/AT2011/000175 WO2011127504A1 (de) | 2010-04-14 | 2011-04-12 | Beschichtungsquelle und verfahren zu deren herstellung |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014153044A Division JP5997212B2 (ja) | 2010-04-14 | 2014-07-28 | コーティングソース及びその製法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013527315A JP2013527315A (ja) | 2013-06-27 |
JP5596850B2 true JP5596850B2 (ja) | 2014-09-24 |
Family
ID=44257246
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013504053A Expired - Fee Related JP5596850B2 (ja) | 2010-04-14 | 2011-04-12 | 陰極アークデポジションコーティングソース |
JP2014153044A Expired - Fee Related JP5997212B2 (ja) | 2010-04-14 | 2014-07-28 | コーティングソース及びその製法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014153044A Expired - Fee Related JP5997212B2 (ja) | 2010-04-14 | 2014-07-28 | コーティングソース及びその製法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US20130199929A1 (ja) |
EP (2) | EP2754729B1 (ja) |
JP (2) | JP5596850B2 (ja) |
KR (1) | KR20130079334A (ja) |
CN (1) | CN102939403B (ja) |
AT (1) | AT12021U1 (ja) |
CA (1) | CA2793736C (ja) |
IL (1) | IL222377A (ja) |
RU (1) | RU2564642C2 (ja) |
WO (1) | WO2011127504A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2566999B1 (de) * | 2010-05-04 | 2018-12-12 | Oerlikon Surface Solutions AG, Pfäffikon | Verdampfungsquelle und verfahren zum funkenverdampfen mit keramischen targets |
AT13830U1 (de) * | 2013-04-22 | 2014-09-15 | Plansee Se | Lichtbogenverdampfungs-Beschichtungsquelle |
US9992917B2 (en) | 2014-03-10 | 2018-06-05 | Vulcan GMS | 3-D printing method for producing tungsten-based shielding parts |
US11131024B2 (en) * | 2015-02-13 | 2021-09-28 | Oerlikon Surface Solutions Ag, Pfäffikon | Fixture comprising magnetic means for holding rotary symmetric workpieces |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS60102248U (ja) * | 1983-12-15 | 1985-07-12 | 日本真空技術株式会社 | スパツタリング用タ−ゲツト装置 |
DE4017111C2 (de) * | 1990-05-28 | 1998-01-29 | Hauzer Holding | Lichtbogen-Magnetron-Vorrichtung |
US5298136A (en) * | 1987-08-18 | 1994-03-29 | Regents Of The University Of Minnesota | Steered arc coating with thick targets |
JPH0480304A (ja) * | 1990-07-23 | 1992-03-13 | Shin Etsu Chem Co Ltd | 希土類金属焼結体の製造方法 |
JPH04354868A (ja) * | 1991-05-29 | 1992-12-09 | Vacuum Metallurgical Co Ltd | マグネトロン型スパッタ装置用ターゲット |
JPH05222524A (ja) * | 1992-02-07 | 1993-08-31 | Toshiba Corp | スパッタ装置 |
US5286361A (en) * | 1992-10-19 | 1994-02-15 | Regents Of The University Of California | Magnetically attached sputter targets |
DE4329155A1 (de) * | 1993-08-30 | 1995-03-02 | Bloesch W Ag | Magnetfeldkathode |
JPH07113165A (ja) * | 1993-10-14 | 1995-05-02 | Mitsubishi Materials Corp | 成膜速度の速いマグネトロンスパッタリング用焼結ターゲット材 |
JP2000328240A (ja) * | 1999-05-21 | 2000-11-28 | Mitsubishi Materials Corp | 光磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法 |
JP2001020066A (ja) * | 1999-07-02 | 2001-01-23 | Toshiba Corp | マグネトロンスパッタ用ターゲット |
AT4240U1 (de) * | 2000-11-20 | 2001-04-25 | Plansee Ag | Verfahren zur herstellung einer verdampfungsquelle |
US20020139662A1 (en) * | 2001-02-21 | 2002-10-03 | Lee Brent W. | Thin-film deposition of low conductivity targets using cathodic ARC plasma process |
RU2271409C2 (ru) * | 2001-12-06 | 2006-03-10 | Федеральное государственное унитарное предприятие "Государственный космический научно-производственный центр им. М.В. Хруничева" | Установка для нанесения покрытий в вакууме |
SE0203851D0 (sv) * | 2002-12-23 | 2002-12-23 | Hoeganaes Ab | Iron-Based Powder |
US20070007130A1 (en) | 2005-07-11 | 2007-01-11 | Heraeus, Inc. | Enhanced magnetron sputtering target |
EP2806048B1 (en) * | 2007-02-09 | 2017-10-11 | JX Nippon Mining & Metals Corporation | Target formed of sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride, or high-melting point metal boride, process for producing the target, assembly of the sputtering target-backing plate, and process for producing the same |
DE102007032443A1 (de) * | 2007-07-10 | 2009-01-15 | Voith Patent Gmbh | Hybridlager und Verfahren zu dessen Herstellung |
-
2010
- 2010-04-14 AT AT0023910U patent/AT12021U1/de not_active IP Right Cessation
-
2011
- 2011-04-12 WO PCT/AT2011/000175 patent/WO2011127504A1/de active Application Filing
- 2011-04-12 EP EP14001267.5A patent/EP2754729B1/de active Active
- 2011-04-12 US US13/641,350 patent/US20130199929A1/en not_active Abandoned
- 2011-04-12 EP EP11722273.7A patent/EP2558608B1/de active Active
- 2011-04-12 CN CN201180019261.2A patent/CN102939403B/zh not_active Expired - Fee Related
- 2011-04-12 JP JP2013504053A patent/JP5596850B2/ja not_active Expired - Fee Related
- 2011-04-12 CA CA2793736A patent/CA2793736C/en not_active Expired - Fee Related
- 2011-04-12 RU RU2012141139/02A patent/RU2564642C2/ru not_active IP Right Cessation
- 2011-04-12 KR KR1020127026654A patent/KR20130079334A/ko not_active Application Discontinuation
-
2012
- 2012-10-11 IL IL222377A patent/IL222377A/en active IP Right Grant
-
2014
- 2014-07-28 JP JP2014153044A patent/JP5997212B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2011127504A1 (de) | 2011-10-20 |
JP2013527315A (ja) | 2013-06-27 |
RU2012141139A (ru) | 2014-05-20 |
IL222377A (en) | 2017-06-29 |
EP2754729A2 (de) | 2014-07-16 |
AT12021U1 (de) | 2011-09-15 |
CN102939403B (zh) | 2015-02-11 |
EP2754729A3 (de) | 2014-08-13 |
EP2558608B1 (de) | 2014-06-18 |
JP2014237894A (ja) | 2014-12-18 |
RU2564642C2 (ru) | 2015-10-10 |
EP2754729B1 (de) | 2015-06-03 |
CA2793736A1 (en) | 2011-10-20 |
KR20130079334A (ko) | 2013-07-10 |
JP5997212B2 (ja) | 2016-09-28 |
EP2558608A1 (de) | 2013-02-20 |
IL222377A0 (en) | 2012-12-31 |
CA2793736C (en) | 2015-01-06 |
US20130199929A1 (en) | 2013-08-08 |
CN102939403A (zh) | 2013-02-20 |
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